公开(公告)号：US20160148816A1

公开(公告)日：2016-05-26

申请号：US14549529

申请日：2014-11-20

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Rung-Yuan Lee ,  Yu-Ting Li ,  Jing-Yin Jhang ,  Chen-Yi Weng ,  Jia-Feng Fang ,  Yi-Wei Chen ,  Wei-Jen Wu ,  Po-Cheng Huang ,  Fu-Shou Tsai ,  Kun-Ju Li ,  Wen-Chin Lin ,  Chih-Chien Liu ,  Chih-Hsun Lin ,  Chun-Yuan Wu

IPC: H01L21/306 ,  H01L21/28

CPC classification number: H01L21/30625 ,  H01L21/28123 ,  H01L21/32115 ,  H01L21/3212

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate; forming a first material layer on the substrate; forming a stop layer on the first material layer; forming a second material layer on the stop layer; and performing a planarizing process to remove the second material layer, the stop layer, and part of the first material layer for forming a gate layer.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供衬底; 在所述基板上形成第一材料层; 在所述第一材料层上形成停止层; 在所述停止层上形成第二材料层; 并且进行平面化处理以去除第二材料层，停止层以及用于形成栅极层的第一材料层的一部分。

公开(公告)号：US10403715B2

公开(公告)日：2019-09-03

申请号：US16222709

申请日：2018-12-17

Applicant: United Microelectronics Corp.

Inventor： Rung-Yuan Lee ,  Chun-Tsen Lu ,  Kuan-Hung Chen

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/41 ,  H01L29/417 ,  H01L23/535 ,  H01L21/306 ,  H01L29/66 ,  H01L21/308 ,  H01L29/786 ,  H01L21/84 ,  H01L27/12

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor nanowire, a gate structure, a first metal nanowire and a second metal nanowire. The semiconductor nanowire is disposed vertically on the substrate. The gate structure surrounds a middle portion of the semiconductor nanowire. The first metal nanowire is located on a side of the semiconductor nanowire and is electronically connected to a lower portion of the semiconductor nanowire. The second metal nanowire is located on the other side of the semiconductor nanowire and is electronically connected to the gate structure.

公开(公告)号：US10043807B1

公开(公告)日：2018-08-07

申请号：US15641236

申请日：2017-07-04

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Rung-Yuan Lee ,  Yu-Cheng Tung ,  Chun-Tsen Lu ,  En-Chiuan Liou ,  Kuan-Hung Chen

IPC: H01L21/00 ,  H01L27/00 ,  H01L29/00 ,  H01L27/092 ,  H01L27/02 ,  H01L29/08 ,  H01L29/78 ,  H01L21/8238 ,  H01L29/66 ,  H01L21/8234 ,  H01L21/02

Abstract: A semiconductor device and a method of forming the same, the semiconductor device includes a plural fin structures, two gates, a protection layer and an interlayer dielectric layer. The fin structures are disposed on a substrate. The two gates are disposed on the substrate across the fin structures. The protection layer is disposed on the substrate, surrounded sidewalls of the two gates. The interlayer dielectric layer is disposed on the substrate, covering the fin structures and the two gates.

公开(公告)号：US09530871B1

公开(公告)日：2016-12-27

申请号：US15225836

申请日：2016-08-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Yueh Tsai ,  Jia-Feng Fang ,  Yi-Wei Chen ,  Jing-Yin Jhang ,  Rung-Yuan Lee ,  Chen-Yi Weng ,  Wei-Jen Wu

IPC: H01L21/8232 ,  H01L29/66 ,  H01L21/02 ,  H01L21/324

CPC classification number: H01L29/66795 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/324 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7848 ,  H01L29/7851

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有鳍状结构的基板; 在鳍状结构上形成外延层; 在外延层上形成第一接触蚀刻停止层（CESL）; 在外延层中形成源/漏区; 并在第一个CESL上形成第二个CESL。

公开(公告)号：US09443757B1

公开(公告)日：2016-09-13

申请号：US14940120

申请日：2015-11-12

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Ming-Yueh Tsai ,  Jia-Feng Fang ,  Yi-Wei Chen ,  Jing-Yin Jhang ,  Rung-Yuan Lee ,  Chen-Yi Weng ,  Wei-Jen Wu

IPC: H01L29/78 ,  H01L21/768 ,  H01L29/161 ,  H01L29/16 ,  H01L29/165 ,  H01L29/08 ,  H01L23/535 ,  H01L29/66

CPC classification number: H01L29/66795 ,  H01L21/02126 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/324 ,  H01L21/76829 ,  H01L21/76832 ,  H01L21/76834 ,  H01L29/0847 ,  H01L29/1608 ,  H01L29/161 ,  H01L29/165 ,  H01L29/7848 ,  H01L29/7851

Abstract: A method for fabricating semiconductor device is disclosed. The method includes the steps of: providing a substrate having a fin-shaped structure thereon; forming an epitaxial layer on the fin-shaped structure; forming a first contact etch stop layer (CESL) on the epitaxial layer; forming a source/drain region in the epitaxial layer; and forming a second CESL on the first CESL.

Abstract translation: 公开了半导体器件的制造方法。 该方法包括以下步骤：提供其上具有鳍状结构的基板; 在鳍状结构上形成外延层; 在外延层上形成第一接触蚀刻停止层（CESL）; 在外延层中形成源/漏区; 并在第一个CESL上形成第二个CESL。