公开(公告)号：US20230207668A1

公开(公告)日：2023-06-29

申请号：US18118115

申请日：2023-03-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Kuan-Hung Chen ,  Guang-Yu Lo ,  Chun-Chia Chen ,  Chun-Tsen Lu

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/51 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/66795 ,  H01L29/785 ,  H01L29/7834 ,  H01L29/511 ,  H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/28202

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

公开(公告)号：US10043718B1

公开(公告)日：2018-08-07

申请号：US15672325

申请日：2017-08-09

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Kuan-Hung Chen ,  Rung-Yuan Lee ,  Chun-Tsen Lu ,  Chorng-Lih Young

IPC: H01L21/02 ,  H01L21/8238 ,  H01L21/20 ,  H01L21/225 ,  H01L29/16 ,  H01L21/8234 ,  H01L21/04 ,  H01L21/762 ,  H01L29/66 ,  H01L29/165 ,  H01L21/22 ,  H01L29/78

Abstract: A method of fabricating a semiconductor device includes the following steps: providing a semiconductor substrate having a fin structure thereon; forming a recess in the fin structure so that the semiconductor substrate is partially exposed from the bottom surface of the recess; forming a dopant source layer conformally disposed on side surfaces and a bottom surface of the recess; removing the dopant source layer disposed on the bottom surface of the recess until portions of the semiconductor substrate are exposed from the bottom surface of the recess; and annealing the dopant source layer so as to form a side doped region in the fin structure.

公开(公告)号：US20240282843A1

公开(公告)日：2024-08-22

申请号：US18653933

申请日：2024-05-02

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Kuan-Hung Chen ,  Guang-Yu Lo ,  Chun-Chia Chen ,  Chun-Tsen Lu

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/28 ,  H01L29/51 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/28202 ,  H01L29/511 ,  H01L29/7834 ,  H01L29/785

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

公开(公告)号：US10475744B2

公开(公告)日：2019-11-12

申请号：US15727380

申请日：2017-10-06

Applicant: United Microelectronics Corp.

Inventor： Kuan-Hung Chen ,  Rung-Yuan Lee ,  Chun-Tsen Lu

IPC: H01L23/532 ,  H01L21/02 ,  H01L21/762 ,  H01L29/423 ,  H01L29/06 ,  B82Y99/00

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate, an isolation structure, an outer structure, and a gate structure. The isolation structure is disposed on the substrate. The outer structure surrounds a sidewall of the isolation structure. The gate structure surrounds a central part of the outer structure, so that the central part covered by the gate structure becomes a channel region, and the outer structure at both sides of the central part respectively becomes a source region and a drain region.

公开(公告)号：US20190074250A1

公开(公告)日：2019-03-07

申请号：US15727380

申请日：2017-10-06

Applicant: United Microelectronics Corp.

Inventor： Kuan-Hung Chen ,  Rung-Yuan Lee ,  Chun-Tsen Lu

IPC: H01L23/532 ,  H01L21/762 ,  H01L21/02

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a substrate, an isolation structure, an outer structure, and a gate structure. The isolation structure is disposed on the substrate. The outer structure surrounds a sidewall of the isolation structure. The gate structure surrounds a central part of the outer structure, so that the central part covered by the gate structure becomes a channel region, and the outer structure at both sides of the central part respectively becomes a source region and a drain region.

公开(公告)号：US12009409B2

公开(公告)日：2024-06-11

申请号：US18118115

申请日：2023-03-06

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Kuan-Hung Chen ,  Guang-Yu Lo ,  Chun-Chia Chen ,  Chun-Tsen Lu

IPC: H01L29/51 ,  H01L21/02 ,  H01L21/28 ,  H01L29/66 ,  H01L29/78

CPC classification number: H01L29/66795 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/022 ,  H01L21/28202 ,  H01L29/511 ,  H01L29/7834 ,  H01L29/785

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

公开(公告)号：US20190140051A1

公开(公告)日：2019-05-09

申请号：US16222709

申请日：2018-12-17

Applicant: United Microelectronics Corp.

Inventor： Rung-Yuan Lee ,  Chun-Tsen Lu ,  Kuan-Hung Chen

IPC: H01L29/06 ,  H01L29/66 ,  H01L27/12 ,  H01L21/84 ,  H01L29/417 ,  H01L29/786 ,  H01L21/308 ,  H01L29/423 ,  H01L21/306 ,  H01L23/535 ,  H01L29/41

CPC classification number: H01L29/0676 ,  H01L21/30604 ,  H01L21/308 ,  H01L21/84 ,  H01L23/535 ,  H01L27/1203 ,  H01L29/0649 ,  H01L29/413 ,  H01L29/41733 ,  H01L29/41741 ,  H01L29/42392 ,  H01L29/66545 ,  H01L29/66666 ,  H01L29/66742 ,  H01L29/78642

Abstract: A semiconductor device is provided. The semiconductor device includes a substrate, a semiconductor nanowire, a gate structure, a first metal nanowire and a second metal nanowire. The semiconductor nanowire is disposed vertically on the substrate. The gate structure surrounds a middle portion of the semiconductor nanowire. The first metal nanowire is located on a side of the semiconductor nanowire and is electronically connected to a lower portion of the semiconductor nanowire. The second metal nanowire is located on the other side of the semiconductor nanowire and is electronically connected to the gate structure.

公开(公告)号：US10204986B1

公开(公告)日：2019-02-12

申请号：US15783823

申请日：2017-10-13

Applicant: United Microelectronics Corp.

Inventor： Rung-Yuan Lee ,  Chun-Tsen Lu ,  Kuan-Hung Chen

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/41 ,  H01L29/417 ,  H01L23/535 ,  H01L21/306 ,  H01L29/66 ,  H01L21/308 ,  H01L29/786 ,  H01L21/84 ,  H01L27/12

Abstract: A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a semiconductor nanowire, a gate structure, a first metal nanowire and a second metal nanowire. The semiconductor nanowire is disposed vertically on the substrate. The gate structure surrounds a middle portion of the semiconductor nanowire. The first metal nanowire is located on a side of the semiconductor nanowire and is electronically connected to a lower portion of the semiconductor nanowire. The second metal nanowire is located on the other side of the semiconductor nanowire and is electronically connected to the gate structure.

公开(公告)号：US20230207669A1

公开(公告)日：2023-06-29

申请号：US18118154

申请日：2023-03-07

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Kuan-Hung Chen ,  Guang-Yu Lo ,  Chun-Chia Chen ,  Chun-Tsen Lu

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/51 ,  H01L21/02 ,  H01L21/28

CPC classification number: H01L29/66795 ,  H01L29/785 ,  H01L29/7834 ,  H01L29/511 ,  H01L21/022 ,  H01L21/0214 ,  H01L21/02164 ,  H01L21/28202

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.

公开(公告)号：US11631753B2

公开(公告)日：2023-04-18

申请号：US16282323

申请日：2019-02-22

Applicant: UNITED MICROELECTRONICS CORP.

Inventor： Chung-Fu Chang ,  Kuan-Hung Chen ,  Guang-Yu Lo ,  Chun-Chia Chen ,  Chun-Tsen Lu

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/51 ,  H01L21/02 ,  H01L21/28

Abstract: A method for fabricating semiconductor device includes the steps of: forming a fin-shaped structure on a substrate; forming a gate dielectric layer on the fin-shaped structure; forming a gate electrode on the fin-shaped structure; performing a nitridation process to implant ions into the gate dielectric layer adjacent to two sides of the gate electrode; and forming an epitaxial layer adjacent to two sides of the gate electrode.