利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

80 条记录 (耗时 0.161 秒)

    Techniques for plasma injection
    12.
    发明授权
    Techniques for plasma injection 有权
    等离子体注入技术

    公开(公告)号：US07723707B2

    公开(公告)日：2010-05-25

    申请号：US11781700

    申请日：2007-07-23

    申请人： Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

    发明人： Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

    IPC分类号： G21G1/00

    CPC分类号： H01J37/3171 ,  H01J37/026 ,  H01J2237/0041 ,  H01J2237/055

    摘要： Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.

    摘要翻译： 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上 离子束路径的一侧，第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

    Plasma potential modulated ion implantation system
    13.
    发明授权
    Plasma potential modulated ion implantation system 有权
    等离子体电位调制离子注入系统

    公开(公告)号：US09297063B2

    公开(公告)日：2016-03-29

    申请号：US13457451

    申请日：2012-04-26

    申请人： Svetlana B. Radovanov ,  Victor M. Benveniste ,  Bon-Woong Koo ,  Richard M. White ,  Kevin M. Daniels

    发明人： Svetlana B. Radovanov ,  Victor M. Benveniste ,  Bon-Woong Koo ,  Richard M. White ,  Kevin M. Daniels

    IPC分类号： H01J37/317 ,  H01J37/16 ,  C23C14/48 ,  C23C16/04 ,  H01J37/32

    CPC分类号： C23C14/48 ,  C23C16/042 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0817 ,  H01J2237/083

    摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.

    摘要翻译： 一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。 等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。 掩模狭缝与等离子体室电隔离。 将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。 正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。 加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。 掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。

    Plasma Potential Modulated ION Implantation System
    14.
    发明申请
    Plasma Potential Modulated ION Implantation System 有权
    等离子体电位调制离子注入系统

    公开(公告)号：US20130287964A1

    公开(公告)日：2013-10-31

    申请号：US13457451

    申请日：2012-04-26

    申请人： Svetlana B. Radovanov ,  Victor M. Benveniste ,  Bon-Woong Koo ,  Richard M. White ,  Kevin M. Daniels

    发明人： Svetlana B. Radovanov ,  Victor M. Benveniste ,  Bon-Woong Koo ,  Richard M. White ,  Kevin M. Daniels

    IPC分类号： C23C14/04 ,  C23C14/48

    CPC分类号： C23C14/48 ,  C23C16/042 ,  H01J37/3171 ,  H01J37/32357 ,  H01J37/32422 ,  H01J37/32623 ,  H01J2237/0817 ,  H01J2237/083

    摘要： An ion implantation system including a plasma source, a mask-slit, and a plasma chamber. The plasma source is configured to generate a plasma within the plasma chamber in response to the introduction of a gas therein. The mask-slit is electrically isolated from the plasma chamber. A positive voltage bias is applied to the plasma chamber above a bias potential used to generate the plasma. The positive voltage bias drives the plasma potential to accelerate the ions to a desired implant energy. The accelerated ions pass through an aperture in the mask-slit and are directed toward a substrate for implantation. The mask-slit is electrically isolated from the plasma chamber and is maintained at ground potential with respect to the plasma.

    摘要翻译： 一种离子注入系统，包括等离子体源，掩模狭缝和等离子体室。 等离子体源被配置为响应于其中引入气体而在等离子体室内产生等离子体。 掩模狭缝与等离子体室电隔离。 将正电压偏压施加到用于产生等离子体的偏置电位之上的等离子体室。 正电压偏压驱动等离子体电位以将离子加速到所需的注入能量。 加速的离子通过掩模狭缝中的孔，并且被引导到用于植入的基底。 掩模狭缝与等离子体室电隔离并且相对于等离子体保持在接地电位。

    IMPLANT UNIFORMITY CONTROL
    16.
    发明申请
    IMPLANT UNIFORMITY CONTROL 有权
    植入均质控制

    公开(公告)号：US20100084581A1

    公开(公告)日：2010-04-08

    申请号：US12244001

    申请日：2008-10-02

    申请人： Victor M. Benveniste ,  Antonella Cucchetti ,  Bon-Woong Koo

    发明人： Victor M. Benveniste ,  Antonella Cucchetti ,  Bon-Woong Koo

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/1472 ,  H01J37/3007 ,  H01J2237/0041 ,  H01J2237/047 ,  H01J2237/24507 ,  H01J2237/24535 ,  H01J2237/30472 ,  H01J2237/30477 ,  H01J2237/31701 ,  H01J2237/31703

    摘要： An apparatus and method for ion implantation that include destabilizing the ion beam as it passes through magnetic field, preferably a dipole magnetic field is disclosed. By introducing a bias voltage at certain points within the magnetic field, electrons from the plasma are drawn toward the magnet, thereby causing the ion beam to expand due to space charge effects. The bias voltage can be introduced into the magnet in a region where the magnetic field has only one component. Alternatively, the bias voltage can be in a region wherein the magnetic field has two components.

    摘要翻译： 公开了一种用于离子注入的装置和方法，其包括在离子束通过磁场时使其稳定化，优选偶极磁场。 通过在磁场内的某些点引入偏置电压，来自等离子体的电子被吸向磁体，从而由于空间电荷效应而导致离子束膨胀。 可以在磁场仅具有一个分量的区域中将偏置电压引入到磁体中。 或者，偏置电压可以在其中磁场具有两个分量的区域中。

    TECHNIQUES FOR PLASMA INJECTION
    17.
    发明申请
    TECHNIQUES FOR PLASMA INJECTION 有权
    等离子体注射技术

    公开(公告)号：US20090026390A1

    公开(公告)日：2009-01-29

    申请号：US11781700

    申请日：2007-07-23

    申请人： Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

    发明人： Victor M. Benveniste ,  Gordon Angel ,  Bon-Woong Koo ,  Kourosh Saadatmand

    IPC分类号： H01J37/08

    CPC分类号： H01J37/3171 ,  H01J37/026 ,  H01J2237/0041 ,  H01J2237/055

    摘要： Techniques for plasma injection for space charge neutralization of an ion beam are disclosed. In one particular exemplary embodiment, the techniques may be realized as a plasma injection system for space charge neutralization of an ion beam. The plasma injection system may comprise a first array of magnets and a second array of magnets positioned along at least a portion of an ion beam path, the first array being on a first side of the ion beam path and the second array being on a second side of the ion beam path, the first side opposing the second side. At least two adjacent magnets in the first array of magnets may have opposite polarity. The plasma injection system may also comprise a plasma source configured to generate a plasma in a region associated with a portion of the ion beam path by colliding at least some electrons with a gas.

    摘要翻译： 公开了用于离子束空间电荷中和的等离子体注入技术。 在一个特定的示例性实施例中，这些技术可以被实现为用于离子束的空间电荷中和的等离子体注入系统。 等离子体注入系统可以包括第一磁体阵列和沿着离子束路径的至少一部分定位的第二磁体阵列，第一阵列位于离子束路径的第一侧上，第二阵列位于第二阵列的第二阵列上 离子束路径的一侧，第一侧与第二侧相对。 第一磁体阵列中的至少两个相邻的磁体可以具有相反的极性。 等离子体注入系统还可以包括等离子体源，其被配置为通过与至少一些电子与气体碰撞而在与一部分离子束路径相关联的区域中产生等离子体。

    Method and system for microwave excitation of plasma in an ion beam guide
    20.
    发明授权
    Method and system for microwave excitation of plasma in an ion beam guide 有权
    离子束引导中等离子体微波激发的方法和系统

    公开(公告)号：US06414329B1

    公开(公告)日：2002-07-02

    申请号：US09625153

    申请日：2000-07-25

    申请人： Victor M. Benveniste ,  William F. DiVergilio ,  Frank Sinclair

    发明人： Victor M. Benveniste ,  William F. DiVergilio ,  Frank Sinclair

    IPC分类号： H01J37317

    CPC分类号： H01J37/32623 ,  H01J37/05 ,  H01J37/3171 ,  H01J37/32678

    摘要： An apparatus and method for providing a low energy, high current ion beam for ion implantation applications are disclosed. The apparatus includes a mass analysis magnet mounted in a passageway along the path of an ion beam, a power source adapted to provide an electric field in the passageway, and a magnetic device adapted to provide a multi-cusped magnetic field in the passageway, which may include a plurality of magnets mounted along at least a portion of the passageway. The power source and the magnets may cooperatively interact to provide an electron cyclotron resonance (ECR) condition along at least a portion of the passageway. The multi-cusped magnetic field may be superimposed on the dipole field at a specified field strength in a region of the mass analyzer passageway to interact with an electric field of a known RF or microwave frequency for a given low energy ion beam. The invention further comprises a mass analyzer waveguide adapted to couple the electric field to the beam plasma consistently along the length of the mass analyzer passageway to thereby improve the creation of the ECR condition. The invention thus provides enhancement of beam plasma within a mass analyzer dipole magnetic field for low energy ion beams without the introduction of externally generated plasma. The invention further includes a method of providing ion beam containment in a low energy ion implantation system, as well as an ion implantation system.

    摘要翻译： 公开了一种用于提供用于离子注入应用的低能量高电流离子束的装置和方法。 该装置包括安装在沿着离子束的路径的通道中的质量分析磁体，适于在通道中提供电场的电源以及适于在通道中提供多通道磁场的磁性装置，其中 可以包括沿通道的至少一部分安装的多个磁体。 电源和磁体可以协同地相互作用以沿着通道的至少一部分提供电子回旋共振（ECR）状态。 多质量磁场可以在质量分析器通道的区域中以指定的场强叠加在偶极子场上，以与给定的低能离子束的已知RF或微波频率的电场相互作用。 本发明还包括质量分析器波导，其适于沿着质量分析器通道的长度一致地将电场耦合到束等离子体，从而改善ECR条件的产生。 因此，本发明在低能量离子束的质量分析器偶极磁场内提供束等离子体的增强，而不引入外部产生的等离子体。 本发明还包括一种在低能离子注入系统中提供离子束容纳的方法以及离子注入系统。