公开(公告)号：US06783868B2

公开(公告)日：2004-08-31

申请号：US10269792

申请日：2002-10-14

申请人： Ralph J. Ciotti ,  Scott Edward Beck ,  Eugene Joseph Karwacki, Jr.

发明人： Ralph J. Ciotti ,  Scott Edward Beck ,  Eugene Joseph Karwacki, Jr.

IPC分类号： B32B1500

CPC分类号： H01L21/76864 ,  H01L21/28556 ,  H01L21/76838 ,  H01L21/76858 ,  H01L21/76871 ,  H01L21/76877 ,  Y10T428/1266 ,  Y10T428/12903 ,  Y10T428/3154 ,  Y10T428/31663

摘要： A process is described for depositing a copper film on a substrate surface by chemical vapor deposition of a copper precursor. The process includes treating a diffusion barrier layer surface and/or a deposited film with an adhesion-promoting agent and annealing the copper film to the substrate. Suitable adhesion-promoting agents include, e.g., organic halides, such as methylene chloride, diatomic chlorine, diatomic bromine, diatomic iodine, HCl, HBr and HI. Processes of the invention provide copper-based films, wherein a texture of the copper-based films is predominantly (111). Such films provide substrates having enhanced adhesion between the diffusion barrier layer underlying the (111) film and the copper overlying the (111) film.

摘要翻译： 描述了通过铜前体的化学气相沉积在基板表面上沉积铜膜的工艺。 该方法包括用粘合促进剂处理扩散阻挡层表面和/或沉积膜并将铜膜退火至基底。 合适的粘合促进剂包括例如有机卤化物，例如二氯甲烷，双原子氯，双原子溴，双原子碘，HCl，HBr和HI。 本发明的方法提供铜基膜，其中铜基膜的织构主要为（111）。 这样的膜提供了在（111）膜下面的扩散阻挡层和覆盖（111）膜的铜之间具有增强的粘附性的衬底。

公开(公告)号：US08356514B2

公开(公告)日：2013-01-22

申请号：US13006397

申请日：2011-01-13

申请人： Yong-Fa Wang ,  Scott Edward Beck

发明人： Yong-Fa Wang ,  Scott Edward Beck

IPC分类号： G01F1/68

CPC分类号： G01F1/6845 ,  G01F1/692

摘要： Improved sensors are disclosed that include a heater resistor and/or one or more sensor resistors. In some instances, the heater resistor may be configured to have a zero or near-zero temperature coefficient of resistance (TCR), while one or more sensor resistors may be configured to have a non-zero higher TCR. In some instances, the heater resistor may include a polysilicon material that is doped with a first concentration of dopant, and the one or more sensing elements may include a polysilicon material that is doped with a second higher concentration of dopant. In some cases, the first concentration of dopant may be configured to provide a heater resistor that has a zero or near-zero temperature coefficient of resistance (TCR).

摘要翻译： 公开了改进的传感器，其包括加热电阻器和/或一个或多个传感器电阻器。 在一些情况下，加热电阻器可以被配置为具有零或接近零的电阻温度系数（TCR），而一个或多个传感器电阻器可被配置为具有非零较高的TCR。 在一些情况下，加热电阻器可以包括掺杂有第一浓度掺杂剂的多晶硅材料，并且一个或多个感测元件可以包括掺杂有第二较高浓度掺杂剂的多晶硅材料。 在一些情况下，掺杂剂的第一浓度可被配置成提供具有零或近零电阻温度系数（TCR）的加热电阻器。

公开(公告)号：US06583048B2

公开(公告)日：2003-06-24

申请号：US09944042

申请日：2001-08-31

申请人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Howard Paul Withers, Jr. ,  Scott Edward Beck ,  Raymond Nicholas Vrtis

发明人： Jean Louise Vincent ,  Mark Leonard O'Neill ,  Howard Paul Withers, Jr. ,  Scott Edward Beck ,  Raymond Nicholas Vrtis

IPC分类号： H01L214763

CPC分类号： B05D1/60 ,  C23C16/401 ,  H01L21/02126 ,  H01L21/02131 ,  H01L21/02216 ,  H01L21/02274 ,  H01L21/3121 ,  H01L21/31629 ,  H01L21/31633

摘要： A method of forming a low dielectric constant interlayer dielectric film on a substrate by reacting, under chemical vapor deposition conditions sufficient to deposit the film on the substrate, an organosilicon precursor comprising a silyl ether, a silyl ether oligomer, or an organosilicon compound containing one or more reactive groups, to form an interlayer dielectric film having a dielectric constant of 3.5 or less. The films formed by the above method.

摘要翻译： 在基板上形成低介电常数层间电介质膜的方法，在足以将该膜沉积在基板上的化学气相沉积条件下反应含有甲硅烷基醚，甲硅烷基醚低聚物或含有一个的有机硅化合物的有机硅前体 或更多的反应性基团，以形成介电常数为3.5或更小的层间绝缘膜。 由上述方法形成的薄膜。

公开(公告)号：US08485031B2

公开(公告)日：2013-07-16

申请号：US13361764

申请日：2012-01-30

申请人： Jamie Speldrich ,  Scott Edward Beck ,  Phil Foster ,  Ru Wang

发明人： Jamie Speldrich ,  Scott Edward Beck ,  Phil Foster ,  Ru Wang

IPC分类号： G01F1/68

CPC分类号： G01F15/125 ,  B01D17/10 ,  G01F1/36 ,  G01F1/40 ,  G01F1/684 ,  G01F1/6842

摘要： The present disclosure relates to methods and devices for reducing moisture, dust, particulate matter, and/or other contaminates entering a sensor. A sensor assembly may include a housing with an inlet flow port and an outlet flow port. The housing may define a fluid channel extending between the inlet flow port and the outlet flow port, with a sensor positioned in the housing and exposed to the fluid channel. The sensor may be configured to sense a measure related to the flow rate of a fluid flowing through the fluid channel. A hydrophobic filter may be situated in the fluid channel, sometimes upstream of the sensor. When so configured, and during operation of the sensor assembly, a fluid may pass through the inlet flow port, through the hydrophobic filter, across the sensor, and through the outlet flow port.

摘要翻译： 本公开涉及用于减少进入传感器的湿气，灰尘，颗粒物质和/或其它污染物的方法和装置。 传感器组件可以包括具有入口流动端口和出口流动端口的壳体。 壳体可以限定在入口流动端口和出口流动端口之间延伸的流体通道，传感器定位在壳体中并暴露于流体通道。 传感器可以被配置为感测与流过流体通道的流体的流量相关的测量。 疏水过滤器可以位于流体通道中，有时位于传感器的上游。 当这样构造并且在传感器组件的操作期间，流体可以穿过入口流动端口，穿过疏水过滤器，穿过传感器，并且通过出口流动端口。

公开(公告)号：US20130068013A1

公开(公告)日：2013-03-21

申请号：US13235261

申请日：2011-09-16

申请人： Scott Edward Beck ,  Yong-Fa Wang

发明人： Scott Edward Beck ,  Yong-Fa Wang

IPC分类号： G01F1/69 ,  G01F1/68 ,  G01F1/00 ,  H01L21/02

CPC分类号： G01F1/00 ,  G01F1/68 ,  G01F1/6845 ,  G01F1/69 ,  G01F1/692 ,  H01L21/02 ,  H01L21/28518 ,  H01L27/1203

摘要： A sensing element having an integrally formed metal-silicide layer with a silicon layer is described. In some instances, the thickness of the metal-silicide layer can be controlled during fabrication such that the sensing element has a desired resistivity and/or a near linear thermal coefficient of resistance (TCR).

摘要翻译： 描述了具有整体形成的具有硅层的金属硅化物层的感测元件。 在一些情况下，可以在制造期间控制金属硅化物层的厚度，使得感测元件具有期望的电阻率和/或近似线性的热电阻系数（TCR）。

公开(公告)号：US20120186336A1

公开(公告)日：2012-07-26

申请号：US13361764

申请日：2012-01-30

申请人： Jamie Speldrich ,  Scott Edward Beck ,  Phil Foster ,  Ru Wang

发明人： Jamie Speldrich ,  Scott Edward Beck ,  Phil Foster ,  Ru Wang

IPC分类号： G01F15/02

CPC分类号： G01F15/125 ,  B01D17/10 ,  G01F1/36 ,  G01F1/40 ,  G01F1/684 ,  G01F1/6842

摘要： The present disclosure relates to methods and devices for reducing moisture, dust, particulate matter, and/or other contaminates entering a sensor. A sensor assembly may include a housing with an inlet flow port and an outlet flow port. The housing may define a fluid channel extending between the inlet flow port and the outlet flow port, with a sensor positioned in the housing and exposed to the fluid channel. The sensor may be configured to sense a measure related to the flow rate of a fluid flowing through the fluid channel. A hydrophobic filter may be situated in the fluid channel, sometimes upstream of the sensor. When so configured, and during operation of the sensor assembly, a fluid may pass through the inlet flow port, through the hydrophobic filter, across the sensor, and through the outlet flow port.

摘要翻译： 本公开涉及用于减少进入传感器的湿气，灰尘，颗粒物质和/或其它污染物的方法和装置。 传感器组件可以包括具有入口流动端口和出口流动端口的壳体。 壳体可以限定在入口流动端口和出口流动端口之间延伸的流体通道，传感器定位在壳体中并暴露于流体通道。 传感器可以被配置为感测与流过流体通道的流体的流量相关的测量。 疏水过滤器可以位于流体通道中，有时位于传感器的上游。 当这样构造并且在传感器组件的操作期间，流体可以穿过入口流动端口，穿过疏水过滤器，穿过传感器，并且通过出口流动端口。

公开(公告)号：US08113046B2

公开(公告)日：2012-02-14

申请号：US12729173

申请日：2010-03-22

申请人： Jamie Speldrich ,  Scott Edward Beck ,  Phil Foster ,  Ru Wang

发明人： Jamie Speldrich ,  Scott Edward Beck ,  Phil Foster ,  Ru Wang

IPC分类号： G01F1/68

CPC分类号： G01F15/125 ,  B01D17/10 ,  G01F1/36 ,  G01F1/40 ,  G01F1/684 ,  G01F1/6842

摘要： The present disclosure relates generally to sensors, and more particularly, to methods and devices for reducing moisture, dust, particulate matter, and/or other contaminates entering a sensor. In one illustrative embodiment, a sensor assembly includes a housing with an inlet flow port and an outlet flow port. The housing defines a fluid channel extending between the inlet flow port and the outlet flow port, with a sensor positioned in the housing and exposed to the fluid channel. The illustrative sensor is configured to sense a measure related to the flow rate of a fluid flowing through the fluid channel. A hydrophobic filter may be situated in the fluid channel, sometimes upstream of the sensor. When so configured, and during operation of the sensor assembly, a fluid may pass through the inlet flow port, through the hydrophobic filter, across the sensor, and through the outlet flow port. The hydrophobic filter may be configured to reduce the moisture entering the fluid channel of the sensor.

摘要翻译： 本公开一般涉及传感器，更具体地，涉及用于减少进入传感器的湿气，灰尘，颗粒物质和/或其它污染物的方法和装置。 在一个说明性实施例中，传感器组件包括具有入口流动端口和出口流动端口的壳体。 壳体限定在入口流动端口和出口流动端口之间延伸的流体通道，传感器定位在壳体中并暴露于流体通道。 说明性传感器被配置为感测与流过流体通道的流体的流量相关的测量。 疏水过滤器可以位于流体通道中，有时位于传感器的上游。 当这样构造并且在传感器组件的操作期间，流体可以穿过入口流动端口，穿过疏水过滤器，穿过传感器，并且通过出口流动端口。 疏水过滤器可以被配置为减少进入传感器的流体通道的湿气。

公开(公告)号：US06534413B1

公开(公告)日：2003-03-18

申请号：US09698467

申请日：2000-10-27

申请人： Eric Anthony Robertson, III ,  Scott Edward Beck

发明人： Eric Anthony Robertson, III ,  Scott Edward Beck

IPC分类号： H01L21302

CPC分类号： H01L21/02049 ,  B81C1/00936 ,  H01L21/31116

摘要： A method for removing sacrificial materials and metal contamination from silicon surfaces during the manufacturing of an integrated micromechanical device and a microelectronic device on a single chip is provided which includes the steps of adjusting the temperature of the chip using a reaction chamber to a temperature appropriate for the selection of a beta-diketone and the design of micromechanical and microelectronic devices, cycle purging the chamber using an inert gas to remove atmospheric gases and trace amounts of water, introducing HF and the beta-diketone as a reactive mixture into the reaction chamber which contains at least one substrate to be etched, flowing the reactive mixture over the substrate until the sacrificial materials and metal contamination have been substantially removed, stopping the flow of the reactive mixture; and cycle purging the chamber to remove residual reactive mixture and any remaining reaction by-products. Optionally, an oxidant gas may be added to the reactive mixture to promote the oxidation of metal species.

摘要翻译： 提供了在单个芯片上集成微机械装置和微电子器件的制造期间从硅表面去除牺牲材料和金属污染的方法，其包括以下步骤：使用反应室将芯片的温度调节到适于 选择β-二酮和微机电和微电子器件的设计，使用惰性气体循环清洗室以除去大气气体和痕量的水，将HF和β-二酮作为反应混合物引入反应室，其中 包含至少一个要蚀刻的基底，使反应混合物流过基底，直到牺牲材料和金属污染被基本上除去，停止反应混合物的流动; 并循环清洗室以除去残留的反应性混合物和任何剩余的反应副产物。 任选地，氧化剂气体可以加入到反应混合物中以促进金属物质的氧化。

公开(公告)号：US06509266B1

公开(公告)日：2003-01-21

申请号：US09824455

申请日：2001-04-02

申请人： Ralph J. Ciotti ,  Scott Edward Beck ,  Eugene Joseph Karwacki, Jr.

发明人： Ralph J. Ciotti ,  Scott Edward Beck ,  Eugene Joseph Karwacki, Jr.

IPC分类号： H01L2144

CPC分类号： H01L21/76864 ,  H01L21/28556 ,  H01L21/76838 ,  H01L21/76858 ,  H01L21/76871 ,  H01L21/76877 ,  Y10T428/1266 ,  Y10T428/12903 ,  Y10T428/3154 ,  Y10T428/31663

摘要： A process is described for depositing a copper film on a substrate surface by chemical vapor deposition of a copper precursor. The process includes treating a diffusion barrier layer surface and/or a deposited film with an adhesion-promoting agent and annealing the copper film to the substrate. Suitable adhesion-promoting agents include, e.g., organic halides, such as methylene chloride, diatomic chlorine, diatomic bromine, diatomic iodine, HCl, HBr and Hl. Processes of the invention provide copper-based films, wherein a texture of the copper-based films is predominantly (111). Such films provide substrates having enhanced adhesion between the diffusion barrier layer underlying the (111) film and the copper overlying the (111) film.

摘要翻译： 描述了通过铜前体的化学气相沉积在基板表面上沉积铜膜的工艺。 该方法包括用粘合促进剂处理扩散阻挡层表面和/或沉积膜并将铜膜退火至基底。 合适的粘合促进剂包括例如有机卤化物，例如二氯甲烷，双原子氯，双原子溴，双原子碘，HCl，HBr和H1。 本发明的方法提供铜基膜，其中铜基膜的织构主要为（111）。 这样的膜提供了在（111）膜下面的扩散阻挡层和覆盖（111）膜的铜之间具有增强的粘附性的衬底。

公开(公告)号：US6159859A

公开(公告)日：2000-12-12

申请号：US93975

申请日：1998-06-09

申请人： Eric Anthony Robertson, III ,  David Arthur Bohling ,  Mark Allen George ,  Scott Edward Beck

发明人： Eric Anthony Robertson, III ,  David Arthur Bohling ,  Mark Allen George ,  Scott Edward Beck

IPC分类号： H01L21/302 ,  H01L21/304 ,  H01L21/306

CPC分类号： H01L21/02049

摘要： The present invention is a process for thermal, vapor phase removal of silicon oxides and metal-containing contaminants from a surface of a substrate of a type used in manufacturing semiconductor devices comprising contacting the substrate at an elevated temperature at an elevated temperature appropriate to generate and maintain an effective amount of a cleaning reagent to form volatile by-products of the silicon oxides and the metal-containing contaminants and removing the volatile by-products from the surface, wherein the cleaning reagent is a complex of hydrogen fluoride and an oxygen-containing compound selected from the group consisting of one or more of trifluoroacetic acid, trifluoroacetic anhydride, 1,2-propanedione, a .beta.-diketone and a .beta.-diketoimine of the formula: ##STR1##

摘要翻译： 本发明是用于从用于制造半导体器件的类型的衬底的表面热，气相去除氧化硅和含金属的污染物的方法，包括在升高的温度下使衬底接触，所述高温适于产生和 保持有效量的清洗试剂以形成氧化硅和含金属污染物的挥发性副产物，并从表面除去挥发性副产物，其中清洗试剂是氟化氢和含氧气体的络合物 选自三氟乙酸，三氟乙酸酐，1,2-丙二酮，β-二酮和下式的β-二酮亚胺中的一种或多种的化合物：