摘要:
A method for forming a plated magnetic thin film of high saturation magnetization and low coercivity having the general form Co100−a−bFeaMb, where M can be Mo, Cr, W, Ni or Rh, which is suitable for use in magnetic recording heads that write on narrow trackwidth, high coercivity media. The plating method includes four current application processes: direct current, pulsed current, pulse reversed current and conditioned pulse reversed current.
摘要:
An ear thermometer probe structure comprises a shell body. A hollow thermal absorption component is disposed in the shell body, and contacts several positioning points one the inner wall of the shell body. An air gap is formed at the part of the thermal absorption component not contacting the shell body. A wave guide is disposed in the thermal absorption component. The rear section of the wave guide tightly contacts the thermal absorption component, and the front section thereof is separated from the shell body by an air gap. A filter is disposed at the front end of the wave guide to let infrared rays be transmitted. An annular sealing pad is located between the filter and the top of the shell body. A sensor is disposed behind the wave guide and fixed on the thermal absorption component. The sensor is separated from the thermal absorption component and the wave guide by an annular air room.
摘要:
A method of forming small dimension wires by an isotropic removal process. The method provides a substrate with an insulation layer. A first conductive layer and a second conductive layer are formed on the insulation layer. A wire pattern is formed on a photoresist layer after the coating process and the sequential exposure and development process. Part of the second conductive layer is removed by using the wire pattern on the photoresist layer as a mask, and thus part of the second conductive layer with wires is remained. Isotropic etching the peripheral part of the second conductive layer and thus the part of wire pattern with a smaller dimension is remained. Using the wire pattern with a smaller dimension as a mask to anisotropic etch the first conductive layer until the surface of the insulation layer is exposed, and thus the process of fabricating small dimension is finished.
摘要:
Nanowire-based mechanical switching devices are described. For example, a nanowire relay includes a nanowire disposed in a void disposed above a substrate. The nanowire has an anchored portion and a suspended portion. A first gate electrode is disposed adjacent the void, and is spaced apart from the nanowire. A first conductive region is disposed adjacent the first gate electrode and adjacent the void, and is spaced apart from the nanowire.
摘要:
Self-aligned via and plug patterning with photobuckets for back end of line (BEOL) interconnects is described. In an example, an interconnect structure for an integrated circuit includes a first layer of the interconnect structure disposed above a substrate, the first layer having a first grating of alternating metal lines and dielectric lines in a first direction. The dielectric lines have an uppermost surface higher than an uppermost surface of the metal lines. The integrated circuit also includes a second layer of the interconnect structure disposed above the first layer of the interconnect structure. The second layer includes a second grating of alternating metal lines and dielectric lines in a second direction, perpendicular to the first direction. The dielectric lines have a lowermost surface lower than a lowermost surface of the metal lines of the second grating. The dielectric lines of the second grating overlap and contact, but are distinct from, the dielectric lines of the first grating. The integrated circuit also includes a region of dielectric material disposed between the metal lines of the first grating and the metal lines of the second grating, and in a same plane as upper portions of the dielectric lines of the first grating and lower portions of the dielectric lines of the second grating. The region of dielectric material is composed of a cross-linked photolyzable material.
摘要:
Micromirrors and micromirror arrays described herein are useful, for example in maskless photolithography systems and methods and projection display devices and methods. According to one aspect, the micromirrors comprise a polymer structural layer and a reflective dielectric multilayer for selective reflection and/or redirection of incoming electromagnetic radiation. According to another aspect, incorporation of a reflective dielectric multilayer allows for use of polymer structural materials in micromirrors and prevents damage to such polymer materials due to excessive heating from absorption of electromagnetic radiation, as the reflective dielectric multilayers are highly reflective and minimize heating of the micromirror components. According to yet a further aspect, top down fabrication methods are described herein for making a micromirror comprising a polymer structural layer and a reflective dielectric multilayer.
摘要:
Micromirrors and micromirror arrays described herein are useful, for example in maskless photolithography systems and methods and projection display devices and methods. According to one aspect, the micromirrors comprise a polymer structural layer and a reflective dielectric multilayer for selective reflection and/or redirection of incoming electromagnetic radiation. According to another aspect, incorporation of a reflective dielectric multilayer allows for use of polymer structural materials in micromirrors and prevents damage to such polymer materials due to excessive heating from absorption of electromagnetic radiation, as the reflective dielectric multilayers are highly reflective and minimize heating of the micromirror components. According to yet a further aspect, top down fabrication methods are described herein for making a micromirror comprising a polymer structural layer and a reflective dielectric multilayer.
摘要:
Described herein are processing techniques for fabrication of stretchable and/or flexible electronic devices using laser ablation patterning methods. The laser ablation patterning methods utilized herein allow for efficient manufacture of large area (e.g., up to 1 mm2 or greater or 1 m2 or greater) stretchable and/or flexible electronic devices, for example manufacturing methods permitting a reduced number of steps. The techniques described herein further provide for improved heterogeneous integration of components within an electronic device, for example components having improved alignment and/or relative positioning within an electronic device. Also described herein are flexible and/or stretchable electronic devices, such as interconnects, sensors and actuators.