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公开(公告)号：US06881966B2
公开(公告)日：2005-04-19
申请号：US10461702
申请日：2003-06-13
IPC分类号： H01J27/18 , H01J37/00 , H01J37/05 , H01J37/147 , H01J37/30 , H01J37/317
CPC分类号： H01J37/3171 , H01J37/05 , H01J37/147 , H01J2237/057
摘要： A magnetic deflector for an ion beam is disclosed and comprises first and second coils. The coils are positioned above and below the beam, respectively, and extend along a width of the beam. Current passes through the coils to generate a magnetic field therebetween that is generally perpendicular to a direction of travel of the beam along substantially the entire width thereof. In another aspect of the invention, a method of deflecting a beam prior to implantation into a workpiece is disclosed. The method includes determining one or more properties associated with the beam and selectively activating one of a magnetic deflection module and an electrostatic deflection module based on the determination.
摘要翻译： 公开了用于离子束的磁偏转器，并且包括第一和第二线圈。 线圈分别位于梁的上方和下方，并沿着梁的宽度延伸。 电流通过线圈以产生它们之间的磁场，其大致垂直于梁的大致整个宽度的行进方向。 在本发明的另一方面，公开了一种在植入植入工件之前偏转光束的方法。 该方法包括确定与光束相关联的一个或多个属性，并且基于该确定选择性地激活磁偏转模块和静电偏转模块中的一个。
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公开(公告)号：US06534775B1
公开(公告)日：2003-03-18
申请号：US09654380
申请日：2000-09-01
IPC分类号： H01J3730
CPC分类号： H01J37/3171 , H01J3/40 , H01J37/026 , H01J37/3002 , H01J2237/004 , H01J2237/022 , H01J2237/31705
摘要： A system for inhibiting the transport of contaminant particles with an ion beam includes a pair of electrodes that provide opposite electric fields through which the ion beam travels. A particle entrained in the ion beam is charged to a polarity matching the polarity of ion beam when traveling through a first of the electric fields. The downstream electrode provides another electric field for repelling the positively charged particle away from the direction of beam travel.
摘要翻译： 用于抑制用离子束输送污染物颗粒的系统包括一对电极，其提供相反的电场，离子束通过该电场传播。 夹带在离子束中的颗粒在穿过第一电场时被充电到与离子束的极性相匹配的极性。 下游电极提供另一个电场，用于驱除带正电的粒子远离光束移动的方向。
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公开(公告)号：US4816693A
公开(公告)日：1989-03-28
申请号：US88138
申请日：1987-08-21
申请人： Robert D. Rathmell
发明人： Robert D. Rathmell
IPC分类号： H01J37/317
CPC分类号： H01J37/3171
摘要： A uniform ion implantation dose control apparatus controls the implantation of ion particles onto at least one wafer mounted on a rotating disk in the pathway of the ion particle beam. A grounded scanning wire is repeatedly moved across the beam to produce an emission of secondary electrons which is linearly proportional to the beam particle current. The secondary electrons emitted are collected and formed into a current I.sub.s by a collector electrode. Portions of the current I.sub.s on the collector electrode are sampled. While the vacuum conditions within the beamline are good, the beams electrical current I.sub.FC is measured and the collector current I.sub.s sample is calibrated therewith so that when the beamline vacuum becomes a high pressure vacuum, additional collector current I.sub.s samples may be utilized to determine a theoretical beam current I which is a function of the beam particle current I.sub.p =I/q. This theoretical beam current I is utilized to move the rotating disk along a radial pathway perpendicular to the beam pathway at a velocity V which is proportional to the theoretical beam current I.
摘要翻译： 均匀的离子注入剂量控制装置控制离子粒子束在离子粒子束通路中安装在旋转盘上的至少一个晶片上的离子粒子的注入。 接地的扫描线重复地移动穿过光束，以产生与束粒子电流成线性比例的二次电子的发射。 发射的二次电子通过集电极收集并形成电流Is。 对集电极上的电流部分进行采样。 虽然光束线内的真空条件良好，但是测量了光束电流IFC，并且利用其校准集电极电流Is采样，使得当光束线真空变为高压真空时，可以使用附加的集电极电流Is样本来确定理论 光束电流I是光束粒子电流Ip = I / q的函数。 该理论射束电流I被用来沿与垂直于光束通路的径向路径以与理论射束电流I成比例的速度V移动旋转盘。
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公开(公告)号：US07615763B2
公开(公告)日：2009-11-10
申请号：US11523148
申请日：2006-09-19
IPC分类号： H01J37/317
CPC分类号： H01J37/026 , H01J37/1475 , H01J37/3171 , H01J2237/004 , H01J2237/0041 , H01J2237/055
摘要： A magnetic scanner employs constant magnetic fields to mitigate zero field effects. The scanner includes an upper pole piece and a lower pole piece that generate an oscillatory time varying magnetic field across a path of an ion beam and deflect the ion beam in a scan direction. A set of entrance magnets are positioned about an entrance of the scanner and generate a constant entrance magnetic field across the path of the ion beam. A set of exit magnets are positioned about an exit of the scanner and generate a constant exit magnetic field across the path of the ion beam.
摘要翻译： 磁扫描仪采用恒定磁场来减轻零场效应。 该扫描器包括上极片和下极片，其在离子束的路径上产生振荡时变磁场并使扫描方向偏转离子束。 一组入口磁体围绕扫描器的入口定位，并且在离子束的路径上产生恒定的入射磁场。 一组出口磁体围绕扫描器的出口定位，并在离子束的路径上产生恒定的出射磁场。
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公开(公告)号：US07361915B2
公开(公告)日：2008-04-22
申请号：US11290346
申请日：2005-11-30
CPC分类号： H01J37/304 , H01J2237/30455 , H01J2237/31703
摘要： One or more aspects of the present invention pertain to stabilizing the current or density of an ion beam within an ion implantation system by selectively adjusting a lone parameter of feed gas flow. Adjusting the gas flow does not necessitate adjustments to other operating parameters and thereby simplifies the stabilization process. This allows the beam current to be stabilized relatively quickly so that ion implantation can begin promptly and continue uninterrupted. This improves throughput while reducing associated implantation costs.
摘要翻译： 本发明的一个或多个方面涉及通过选择性地调整进料气流的单独参数来稳定离子注入系统内的离子束的电流或密度。 调整气流不需要调整其他操作参数，从而简化稳定过程。 这样可以使光束电流相对较快地稳定，从而可以迅速开始离子注入并持续不间断。 这提高了吞吐量，同时降低了相关的植入成本。
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16.发明授权Means to establish orientation of ion beam to wafer and correct angle errors 有权用于建立离子束到晶片的取向并纠正角度误差的手段公开(公告)号：US07361914B2
公开(公告)日：2008-04-22
申请号：US11290344
申请日：2005-11-30
CPC分类号： H01J37/3171 , H01J37/244 , H01J2237/24507 , H01J2237/24528 , H01J2237/24578 , H01J2237/31703
摘要： One or more aspects of the present invention pertain to a measurement component that facilitates determining a relative orientation between an ion beam and a workpiece. The measurement component is sensitive to ion radiation and allows a relative orientation between the measurement component and the ion beam to be accurately determined by moving the measurement component relative to the ion beam. The measurement component is oriented at a known relationship relative to the workpiece so that a relative orientation between the workpiece and beam can be established. Knowing the relative orientation between the ion beam and workpiece allows the workpiece to be oriented to a specific angle relative to the measured beam angle for more accurate and precise doping of the workpiece, which enhances semiconductor fabrication.
摘要翻译： 本发明的一个或多个方面涉及有助于确定离子束和工件之间的相对取向的测量部件。 测量部件对离子辐射敏感，并允许通过相对于离子束移动测量部件来精确地确定测量部件和离子束之间的相对取向。 测量部件相对于工件以已知的关系定向，从而可以建立工件和梁之间的相对取向。 了解离子束和工件之间的相对取向允许工件相对于测量的光束角定向到特定的角度，以更准确和精确地掺杂工件，这增强了半导体制造。
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17.发明授权Dose cup located near bend in final energy filter of serial implanter for closed loop dose control 有权剂量杯位于串联注射机的最终能量过滤器的弯曲处，用于闭环剂量控制公开(公告)号：US07102146B2
公开(公告)日：2006-09-05
申请号：US10860451
申请日：2004-06-03
申请人： Robert D. Rathmell
发明人： Robert D. Rathmell
IPC分类号： G21G5/10
CPC分类号： H01J37/05 , H01J37/3171
摘要： An ion implantation system having a dose cup located near a final energy bend of a scanned or ribbon-like ion beam of a serial ion implanter for providing an accurate ion current measurement associated with the dose of a workpiece or wafer. The system comprises an ion implanter having an ion beam source for producing a ribbon-like ion beam. The system further comprises an AEF system configured to filter an energy of the ribbon-like ion beam by bending the beam at a final energy bend. The AEF system further comprises an AEF dose cup associated with the AEF system and configured to measure ion beam current, the cup located substantially immediately following the final energy bend. An end station downstream of the AEF system is defined by a chamber wherein a workpiece is secured in place for movement relative to the ribbon-like ion beam for implantation of ions therein. The AEF dose cup is beneficially located up stream of the end station near the final energy bend mitigating pressure variations due to outgassing from implantation operations at the workpiece. Thus, the system provides accurate ion current measurement before such gases can produce substantial quantities of neutral particles in the ion beam, generally without the need for pressure compensation. Such dosimetry measurements may also be used to affect scan velocity to ensure uniform closed loop dose control in the presence of beam current changes from the ion source and outgassing from the workpiece.
摘要翻译： 离子注入系统，其具有位于串联离子注入机的扫描或带状离子束的最终能量弯曲附近的剂量杯，用于提供与工件或晶片的剂量相关联的准确的离子电流测量。 该系统包括具有用于产生带状离子束的离子束源的离子注入机。 该系统还包括被配置为通过在最终能量弯曲处弯曲光束来过滤带状离子束的能量的AEF系统。 AEF系统还包括与AEF系统相关联并被配置为测量离子束电流的AEF剂量杯，所述杯基本上紧接在最终能量弯曲之后。 AEF系统下游的终端站由一个室定义，其中工件被固定在适当位置以相对于带状离子束移动，用于在其中注入离子。 AEF剂量杯有利地位于终端站的上游，靠近最终能量弯曲，减轻了由于在工件处的植入操作而引起的放气的压力变化。 因此，该系统在这种气体可以在离子束中产生大量的中性粒子之前提供精确的离子电流测量，通常不需要压力补偿。 这样的剂量测量也可用于影响扫描速度，以确保在存在来自离子源的束电流变化和从工件脱气的情况下的均匀闭环剂量控制。
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公开(公告)号：US06989545B1
公开(公告)日：2006-01-24
申请号：US10886308
申请日：2004-07-07
IPC分类号： H01J37/317
CPC分类号： H01J37/3171 , H01J37/244 , H01J37/304 , H01J2237/24507 , H01J2237/24528 , H01J2237/31703
摘要： The present invention facilitates semiconductor device fabrication by obtaining angle of incidence values and divergence of an ion beam normal to a plane of a scanned beam. A divergence detector comprising a mask and profiler/sensor is employed to obtain beamlets from the incoming ion beam and then to measure beam current at a number of vertical positions. These beam current measurements are then employed to provide the vertical angle of incidence values, which provide a vertical divergence profile that serves to characterize the ion beam. These values can be employed by an ion beam generation mechanism to perform adjustments on the generated ion beam or position of the workpiece if the values indicate deviation from desired values.
摘要翻译： 本发明通过获得垂直于扫描光束的平面的离子束的入射角和发散角来促进半导体器件的制造。 使用包括掩模和轮廓仪/传感器的发散检测器从入射离子束获得子束，然后在多个垂直位置测量束电流。 然后使用这些射束电流测量来提供垂直入射角，其提供用于表征离子束的垂直发散分布。 这些值可以由离子束产生机构使用，以对所产生的离子束或工件的位置执行调整，如果值表示偏离期望值。
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公开(公告)号：US06777696B1
公开(公告)日：2004-08-17
申请号：US10370952
申请日：2003-02-21
IPC分类号： H01J37317
CPC分类号： H01J37/3171 , H01J37/1472
摘要： An accelerating structure and related method for accelerating/decelerating ions of an ion beam are disclosed. The structure and related method are suitable for use in selectively implanting ions into a workpiece or wafer during semiconductor fabrication to selectively dope areas of the wafer. In addition to accelerating and/or decelerating ions, aspects of the present invention serve to focus as well as to deflect ions of an ion beam. This is accomplished by routing the ion beam through electrodes having potentials developed thereacross. The ion beam is also decontaminated as electrically neutral contaminants within the beam are not affected by the potentials and continue on generally traveling along an original path of the ion beam. The electrodes are also arranged in such a fashion so as to minimize the distance the beam has to travel, thereby mitigating the opportunity for beam blow up.
摘要翻译： 公开了一种用于离子束离子加速/减速的加速结构和相关方法。 该结构和相关方法适用于在半导体制造期间选择性地将离子注入到工件或晶片中以选择性地掺杂晶片的区域。 除了加速和/或减速离子之外，本发明的方面还用于聚焦以及偏转离子束的离子。 这是通过将离子束穿过具有在其上形成的电位的电极来实现的。 离子束也被净化，因为光束内的电中性污染物不受电位的影响，并且通常沿着离子束的原始路径继续行进。 电极也以这样的方式布置，以便使束必须行进的距离最小化，从而减轻了射束的机会。
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公开(公告)号：US06774377B1
公开(公告)日：2004-08-10
申请号：US10607239
申请日：2003-06-26
IPC分类号： H01J37317
CPC分类号： H01J37/3171 , H01J37/12
摘要： A lens structure for use with an ion beam implanter. The lens structure includes first and second electrodes spaced apart along a direction of ion movement. The lens structure extends on opposite sides of a beam path across a width of the ion beam for deflecting ions entering the lens structure. The lens structure include a first electrode for decelerating ions and a second electrode for accelerating the ions to cause ions entering the lens structure to exit said lens structure with approximately the same exit trajectory regardless of the trajectory ions enter the lens structure. In an alternate construction the lens structure can include a first electrode for accelerating ions and a second electrode for decelerating ions.
摘要翻译： 用于离子束注入机的透镜结构。 透镜结构包括沿离子运动方向间隔开的第一和第二电极。 透镜结构在离子束的宽度上的光束路径的相对侧上延伸，用于偏转进入透镜结构。 透镜结构包括用于减速离子的第一电极和用于加速离子的第二电极，使离子进入透镜结构以离开所述透镜结构以大致相同的出射轨迹，而与轨迹离子进入透镜结构无关。 在替代结构中，透镜结构可以包括用于加速离子的第一电极和用于减速离子的第二电极。
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