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11.发明授权公开(公告)号：US11688673B2
公开(公告)日：2023-06-27
申请号：US17314160
申请日：2021-05-07
申请人： WOLFSPEED, INC.
发明人： Marvin Marbell , Arthur Pun , Jeremy Fisher , Ulf Andre , Alexander Komposch
IPC分类号： H01L23/498 , H01L23/66
CPC分类号： H01L23/49811 , H01L23/66 , H01L2223/6611 , H01L2223/6644
摘要： An RF transistor package includes a metal submount; a transistor die mounted to the metal submount; and a surface mount IPD component mounted to the metal submount. The surface mount IPD component includes a dielectric substrate that includes a top surface and a bottom surface and at least a first pad and a second pad arranged on a top surface of the surface mount IPD component; at least one surface mount device includes a first terminal and a second terminal, the first terminal of the surface mount device mounted to the first pad and the second terminal mounted to the second pad; at least one of the first terminal and the second terminal being configured to be isolated from the metal submount by the dielectric substrate; and at least one wire bond bonded to the at least one of the first pad and the second pad.
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公开(公告)号：US20230040260A1
公开(公告)日：2023-02-09
申请号：US17395035
申请日：2021-08-05
申请人： Wolfspeed, Inc.
发明人： Young-Youl Song , Zulhazmi A. Mokhti , John Wood , Qianli Mu , Jeremy Fisher
摘要： A circuit includes a field effect transistor (FET), a reference transistor having an output coupled to an output of the FET, an active bias circuit coupled to the reference transistor and configured to generate an input signal for the reference transistor in response to a change in drain current of the reference transistor due to carrier trapping and to apply the input signal to an input of the reference transistor, and a summing node coupled to an input of the FET and to the input of the reference transistor. The summing node adds the input signal to an input signal of the FET to compensate the carrier trapping effect.
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公开(公告)号：US20240105692A1
公开(公告)日：2024-03-28
申请号：US17951366
申请日：2022-09-23
申请人： Wolfspeed, Inc.
IPC分类号： H01L25/16 , H01L23/367
CPC分类号： H01L25/16 , H01L23/367 , H01L24/06 , H01L2924/13064
摘要： RF transistor amplifier circuits are provided that comprise a circuit board and an RF transistor amplifier die. The RF transistor amplifier die is flip-chip mounted on an upper surface of the circuit board so that a gate terminal, a drain terminal and a source terminal of the die face the upper surface of the circuit board. These RF transistor amplifier circuits further include a heatsink mounted on an upper surface of the RF transistor amplifier die and a plurality of surface mount circuit elements mounted on the upper surface of the circuit board so that a footprint of the heatsink vertically overlaps each of the plurality of surface mount circuit elements.
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公开(公告)号：US20230361059A1
公开(公告)日：2023-11-09
申请号：US17737431
申请日：2022-05-05
申请人： Wolfspeed, Inc.
发明人： Jeremy Fisher
CPC分类号： H01L23/66 , H01L29/2003 , H01L27/1116 , H01L27/1104 , G11C5/063 , H01L2223/6683
摘要： A monolithic microwave integrated circuit comprises a monolithic substrate, a Group III nitride-based channel layer on the monolithic substrate, a Group III nitride-based barrier layer on the monolithic substrate, a Group III nitride-based channel layer in between the monolithic substrate and the Group III nitride-based barrier layer, a radio frequency circuit that includes a plurality of depletion mode RF transistors that are formed in the Group III nitride-based channel and barrier layers, and a static random access memory (“SRAM”) circuit that includes a SRAM block having a plurality of SRAM cells arranged in rows and columns, the SRAM circuit including a plurality of depletion mode transistors and a plurality of enhancement mode transistors that are formed in the Group III nitride-based channel and barrier layers.
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公开(公告)号：US20230253490A1
公开(公告)日：2023-08-10
申请号：US18121628
申请日：2023-03-15
申请人： Wolfspeed, Inc.
发明人： Jeremy Fisher , Scott Sheppard , Khaled Fayed , Simon Wood
IPC分类号： H01L29/778 , H01L29/417 , H01L29/423 , H01L23/522 , H01L23/528 , H01L29/06 , H01L29/20 , H01L29/205
CPC分类号： H01L29/7787 , H01L29/41758 , H01L29/42316 , H01L23/5228 , H01L23/5286 , H01L29/0696 , H01L29/2003 , H01L29/205 , H01L29/7786 , H01L29/42376 , H01L29/4232 , H01L29/42372 , H01L29/4238
摘要： A transistor device includes a plurality of gate fingers that extend in a first direction and are spaced apart from each other in a second direction, each of the gate fingers comprising at least spaced-apart and generally collinear first and second gate finger segments that are electrically connected to each other. The first gate finger segments are separated from the second gate finger segments in the first direction by a gap region that extends in the second direction. A resistor is disposed in the gap region.
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公开(公告)号：US20240105712A1
公开(公告)日：2024-03-28
申请号：US18466242
申请日：2023-09-13
申请人： Wolfspeed, Inc.
发明人： Jeremy Fisher , Gerard Bouisse
IPC分类号： H01L27/06 , H01L23/528 , H01L23/66 , H01L29/20 , H01L29/66 , H01L29/778
CPC分类号： H01L27/0629 , H01L23/5286 , H01L23/66 , H01L28/60 , H01L29/2003 , H01L29/66462 , H01L29/7786
摘要： A radio frequency (RF) transistor die includes a semiconductor structure having an active region including a plurality of transistors having respective gate, drain, or source fingers, and manifold on the semiconductor structure that electrically couples a plurality of the respective gate, drain, or source fingers. At least one capacitor is on the manifold and/or is on at least one of the respective gate, drain, or source fingers. The manifold may be a first metal layer on the semiconductor structure that provides a lower plate of the at least one capacitor, and a second metal layer on the semiconductor structure may provide an upper plate of the at least one capacitor. Related devices and fabrication methods are also discussed.
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17.发明公开公开(公告)号：US20230188100A1
公开(公告)日：2023-06-15
申请号：US17547573
申请日：2021-12-10
申请人： Wolfspeed, Inc.
发明人： Jeremy Fisher
IPC分类号： H03F3/193 , H01L29/20 , H01L29/778 , H03F1/02 , H03F3/45
CPC分类号： H03F3/193 , H01L29/2003 , H01L29/7786 , H03F1/0211 , H03F3/45273 , H01L23/3735
摘要： An RF transistor amplifier circuit comprises a Group III nitride based RF transistor amplifier having a gate terminal, a Group III nitride based self-bias circuit that includes a first Group III nitride based depletion mode high electron mobility transistor, the Group III nitride based self-bias circuit configured to generate a bias voltage, and a Group III nitride based depletion mode differential amplifier that is configured to generate an inverted bias voltage from the bias voltage and to apply the inverted bias voltage to the gate terminal of the Group III nitride based RF transistor amplifier. The Group III nitride based RF transistor amplifier, the Group III nitride based self-bias circuit and the Group III nitride based depletion mode differential amplifier are all implemented in a single die.
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公开(公告)号：US11621672B2
公开(公告)日：2023-04-04
申请号：US17395035
申请日：2021-08-05
申请人： Wolfspeed, Inc.
发明人： Young-Youl Song , Zulhazmi A. Mokhti , John Wood , Qianli Mu , Jeremy Fisher
摘要： A circuit includes a field effect transistor (FET), a reference transistor having an output coupled to an output of the FET, an active bias circuit coupled to the reference transistor and configured to generate an input signal for the reference transistor in response to a change in drain current of the reference transistor due to carrier trapping and to apply the input signal to an input of the reference transistor, and a summing node coupled to an input of the FET and to the input of the reference transistor. The summing node adds the input signal to an input signal of the FET to compensate the carrier trapping effect.
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