Optical member made of synthetic quartz glass, and process for its production
    11.
    发明授权
    Optical member made of synthetic quartz glass, and process for its production 失效
    由合成石英玻璃制成的光学元件及其生产工艺

    公开(公告)号:US07784307B2

    公开(公告)日:2010-08-31

    申请号:US11540760

    申请日:2006-10-02

    摘要: To reduce the change in the refractive index of an irradiated portion of synthetic quartz glass, caused by the irradiation with a high energy light emitted from a light source such as a KrF excimer laser or an ArF excimer laser. A process for producing an optical member made of synthetic quartz glass, wherein the OH group concentration of the optical member is set depending upon the energy density of the laser beam employed, to adjust the ratio R (KJ/cm.sup.2-ppb).sup.-1 of the change in the refractive index of the optical member to the cumulative irradiation energy (KJ/cm.sup.2) by the laser, to be 0.Itoreq.R.Itoreq.0.2, thereby to control the change in the refractive index of the optical member made of synthetic quartz glass by the irradiation with a laser beam to be within a predetermined range.

    摘要翻译: 为了减少由诸如KrF准分子激光器或ArF准分子激光器的光源发射的高能量光的照射引起的合成石英玻璃的照射部分的折射率的变化。 一种制造由合成石英玻璃制成的光学构件的方法,其中根据所使用的激光束的能量密度设置光学构件的OH基浓度,以调节比率R(KJ / cm 2 -Pbb )为1,光学部件的折射率与激光的累积照射能量(KJ / cm 2)的变化为0.Itoreq.R.Itore.0.0,由此控制 通过用激光束照射由合成石英玻璃制成的光学构件的折射率的变化在预定范围内。

    Reflective-type mask blank for EUV lithography
    12.
    发明申请
    Reflective-type mask blank for EUV lithography 有权
    EUV光刻用反射型掩模板

    公开(公告)号:US20070160916A1

    公开(公告)日:2007-07-12

    申请号:US11330205

    申请日:2006-01-12

    摘要: There are provided a substrate with a reflective layer and an EUV mask blank, which can prevent particles from adhering to a surface of the reflective layer or an absorbing layer, or into a reflective layer or an absorbing layer during formation thereof by eliminating electrical connection between a film formed on a front surface of the substrate and a film formed on a rear surface of the substrate. A substrate with a reflective layer, which is usable to fabricate a reflective mask blank for EUV lithography, comprising a chucking layer formed on a rear surface opposite a surface with the reflective layer formed thereon, the chucking layer serving to chuck and support the substrate by an electrostatic chuck, wherein the reflective layer has no electrical connection to the chucking layer.

    摘要翻译: 提供了具有反射层和EUV掩模坯料的基板,其可以防止颗粒在其形成期间粘附到反射层或吸收层的表面,或者通过消除反射层或吸收层之间的电连接 形成在基板的前表面上的膜和形成在基板的后表面上的膜。 具有反射层的基板,其可用于制造用于EUV光刻的反射掩模板,包括形成在与形成在其上的反射层相反的表面的后表面上的夹持层,夹持层用于卡盘并支撑基板, 静电卡盘,其中反射层与夹持层没有电连接。

    Photomask, photomask manufacturing method, and photomask processing device
    13.
    发明申请
    Photomask, photomask manufacturing method, and photomask processing device 失效
    光掩模,光掩模制造方法和光掩模处理装置

    公开(公告)号:US20070059608A1

    公开(公告)日:2007-03-15

    申请号:US11222979

    申请日:2005-09-12

    IPC分类号: G03B27/62 G06F17/50 G03F1/00

    摘要: A photomask is manufactured by a method including providing a substrate having a surface on which a predetermined pattern is to be formed, positioning the substrate in an exposure tool so as to obtain an amount of deformation of the surface due to an external force imposed on the substrate, calculating a target profile of the surface, based on the amount of deformation and a target flatness of the surface, and processing the surface of the substrate so as to make the surface substantially flat when the substrate is positioned in the exposure tool.

    摘要翻译: 通过包括提供具有要在其上形成预定图案的表面的基板的方法制造光掩模,将基板定位在曝光工具中,以便获得由于施加在其上的外力而导致的表面的变形量 基板,基于所述表面的变形量和目标平面度来计算所述表面的目标轮廓,以及当所述基板位于所述曝光工具中时,对所述基板的表面进行处理,以使所述表面基本上平坦。

    Optical member made of synthetic quartz glass, and process for its production
    14.
    发明申请
    Optical member made of synthetic quartz glass, and process for its production 失效
    由合成石英玻璃制成的光学元件及其生产工艺

    公开(公告)号:US20070027018A1

    公开(公告)日:2007-02-01

    申请号:US11540760

    申请日:2006-10-02

    IPC分类号: C03C3/04 C03B5/26 C03C15/00

    摘要: To reduce the change in the refractive index of an irradiated portion of synthetic quartz glass, caused by the irradiation with a high energy light emitted from a light source such as a KrF excimer laser or an ArF excimer laser. A process for producing an optical member made of synthetic quartz glass, wherein the OH group concentration of the optical member is set depending upon the energy density of the laser beam employed, to adjust the ratio R (KJ/cm2-ppb)−1 of the change in the refractive index of the optical member to the cumulative irradiation energy (KJ/cm2) by the laser, to be 0≦R≦0.2, thereby to control the change in the refractive index of the optical member made of synthetic quartz glass by the irradiation with a laser beam to be within a predetermined range.

    摘要翻译: 为了减少由诸如KrF准分子激光器或ArF准分子激光器的光源发射的高能量光的照射引起的合成石英玻璃的照射部分的折射率的变化。 一种制造由合成石英玻璃制成的光学构件的方法,其中根据所用激光束的能量密度设置光学构件的OH基浓度,以调节比例R(KJ / cm 2)/ 光学构件的折射率与激光的累积照射能量(KJ / cm 2)之间的变化的值为0以上的SUP〜-ppb)为0 <= R <= 0.2,从而通过激光束的照射来控制由合成石英玻璃制成的光学构件的折射率的变化,使其在预定范围内。

    Method for drawing up special crude oil
    19.
    发明授权
    Method for drawing up special crude oil 失效
    制造特种原油的方法

    公开(公告)号:US4756368A

    公开(公告)日:1988-07-12

    申请号:US2868

    申请日:1987-01-13

    CPC分类号: C09K8/524 E21B37/00 E21B43/40

    摘要: The present invention relates to a method for drawing up a crude oil containing a great amount of wax or a high-viscosity crude oil. The method of the present invention is characterized by cracking or fractionating the crude oil which has been drawn up, in order to prepare a cracked oil or a gas oil, and by drawing up the crude oil, while injecting a part of the cracked oil or the gas oil into an oil well. According to the present invention, an efficient drawing operation can be achieved.

    摘要翻译: 本发明涉及一种用于制备含有大量蜡或高粘度原油的原油的方法。 本发明的方法的特征在于,为了制备裂化油或粗柴油,以及在将一部分裂化油注入的同时拉起原油,将已经被拉伸的原油开裂或分馏,或 瓦斯油成油井。 根据本发明,可以实现有效的拉拔操作。

    REFLECTIVE LAYER-EQUIPPED SUBSTRATE FOR EUV LITHOGRAPHY, REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, REFLECTIVE MASK FOR EUV LITHOGRAPHY, AND PROCESS FOR PRODUCTION OF THE REFLECTIVE LAYER-EQUIPPED SUBSTRATE
    20.
    发明申请
    REFLECTIVE LAYER-EQUIPPED SUBSTRATE FOR EUV LITHOGRAPHY, REFLECTIVE MASK BLANK FOR EUV LITHOGRAPHY, REFLECTIVE MASK FOR EUV LITHOGRAPHY, AND PROCESS FOR PRODUCTION OF THE REFLECTIVE LAYER-EQUIPPED SUBSTRATE 有权
    用于EUV光刻的反射层设备衬底,用于EUV光刻的反射掩膜,用于EUV光刻的反射掩模,以及用于生产反射层的衬底的工艺

    公开(公告)号:US20120231378A1

    公开(公告)日:2012-09-13

    申请号:US13478532

    申请日:2012-05-23

    IPC分类号: G03F1/24 G03F7/20

    摘要: Provided are an EUV mask blank in which deterioration in reflectivity due to oxidation of a Ru protective layer is prevented, a reflective layer-equipped substrate to be used for producing the EUV mask blank, and a process for producing the reflective layer-equipped substrate. A reflective layer-equipped substrate for EUV lithography comprising a substrate, and a reflective layer for reflecting EUV light and a protective layer for protecting the reflective layer, formed in this order on the substrate, wherein the reflective layer is a Mo/Si multilayer reflective film, the protective layer is a Ru layer or a Ru compound layer, and an intermediate layer containing from 0.5 to 25 at % of nitrogen and from 75 to 99.5 at % of Si is formed between the reflective layer and the protective layer.

    摘要翻译: 提供了防止由于Ru保护层的氧化引起的反射率的劣化的EUV掩模坯料,用于制造EUV掩模坯料的反射层的衬底以及用于制造具有反射层的衬底的工艺。 一种用于EUV光刻的反射层衬底,包括衬底,以及用于反射EUV光的反射层和用于保护反射层的保护层,其依次形成在衬底上,其中反射层是Mo / Si多层反射 膜,保护层是Ru层或Ru化合物层,并且在反射层和保护层之间形成含有0.5至25原子%的氮和75至99.5原子%的Si的中间层。