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公开(公告)号：US20070295598A1
公开(公告)日：2007-12-27
申请号：US11483134
申请日：2006-07-07
CPC分类号： C23C14/3407 , C23C14/352 , C23C14/564 , H01J37/3435
摘要： In certain embodiments, the invention comprises a backing plate for accommodating large area sputtering targets is disclosed. The backing plate assembly has cavities carved into the back surface of the backing plate. The backing plate may further include cooling channels that run through the backing plate to control the temperature of the backing plate and the target. The cavities may be filled with a material that has a lower density than the backing plate. Additionally, the entire back surface may be covered with the material to produce a smooth surface upon which a magnetron may move during a PVD process.
摘要翻译： 在某些实施例中，本发明包括用于容纳大面积溅射靶的背板。 背板组件具有雕刻到背板的后表面中的腔体。 背板还可以包括穿过背板的冷却通道，以控制背板和靶的温度。 空腔可以填充具有比背板更低密度的材料。 此外，整个后表面可以被材料覆盖以产生光滑表面，在PVD过程中磁控管可在该光滑表面上移动。
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12.发明申请公开(公告)号：US20070151841A1
公开(公告)日：2007-07-05
申请号：US11601576
申请日：2006-11-17
申请人： Makoto Inagawa , Akihiro Hosokawa , Hien-Minh Le , Ilya Lavitsky , John White , Todd Martin , Bradley Stimson
发明人： Makoto Inagawa , Akihiro Hosokawa , Hien-Minh Le , Ilya Lavitsky , John White , Todd Martin , Bradley Stimson
CPC分类号： C23C14/3407 , C23C14/35 , H01J37/3405 , H01J37/3408 , H01J37/3435 , H01J37/3452 , H01J37/3455
摘要： A magnetron scanning and support mechanism in which the magnetron is partially supported from an overhead scanning mechanism through multiple springs coupled to different horizontal locations on the magnetron and partially supported from below at multiple locations on the target, on which it slides or rolls. In one embodiment, the yoke plate is continuous and uniform. In another embodiment, the magnetron's magnetic yoke is divided into two flexible yokes, for example, of complementary serpentine shape and each supporting magnets of respective polarity. In another embodiment, the target and magnetron are divided into respective strips separated by other structure. Each magnetron strip is supported partially from above from a common scanning plate and partially on a respective target strip. A centering mechanism may align the different magnetron strips.
摘要翻译： 一种磁控管扫描和支撑机构，其中磁控管通过耦合到磁控管上的不同水平位置的多个弹簧部分地从顶部扫描机构支撑，并且在靶上的多个位置处从其下方部分地支撑，在其上滑动或滚动。 在一个实施例中，轭板是连续且均匀的。 在另一个实施例中，磁控管的磁轭被分成两个柔性轭，例如互补的蛇形形状和各个极性的每个支撑磁体。 在另一个实施例中，靶和磁控管被分成由其它结构分开的相应条。 每个磁控管从上面部分地从普通扫描板支撑并部分地支撑在相应的目标条上。 定心机构可以对准不同的磁控管条。
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13.发明申请MAGNETRON SPUTTERING SYSTEM FOR LARGE-AREA SUBSTRATES HAVING REMOVABLE ANODES 审中-公开具有可拆卸阳极的大面积基底的MAGNETRON溅射系统公开(公告)号：US20070084720A1
公开(公告)日：2007-04-19
申请号：US11610772
申请日：2006-12-14
申请人： Akihiro Hosokawa , Hienminh Le , Makoto Inagawa , John White
发明人： Akihiro Hosokawa , Hienminh Le , Makoto Inagawa , John White
IPC分类号： C23C14/00
CPC分类号： H01J37/3408 , H01J37/3438
摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the anode assembly contains a conductive member and conductive member support. In one aspect, the processing chamber is adapted to allow the conductive member to be removed from the processing chamber without removing any major components from the processing chamber.
摘要翻译： 本发明通常提供一种用于处理物理气相沉积（PVD）室中的衬底的表面的装置和方法，其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个阳极组件，其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面，阳极组件包含导电构件和导电构件支撑件。 在一个方面，处理室适于允许导电构件从处理室移除，而不会从处理室中移除任何主要部件。
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公开(公告)号：US20070028842A1
公开(公告)日：2007-02-08
申请号：US11213667
申请日：2005-08-24
申请人： Makoto Inagawa , Akihiro Hosokawa
发明人： Makoto Inagawa , Akihiro Hosokawa
IPC分类号： C23C16/00
CPC分类号： H01J37/32458
摘要： A process chamber having an reinforced chamber body is provided. The reinforced chamber body may include one or more chamber walls, a chamber bottom, and a chamber support assembly attached to an exterior side of the chamber bottom. The chamber support assembly may include one or more elongated base support structures and one or more lateral support structures connected to the one or more elongated base support structures. The process chamber may also include a plurality of substrate support pins attached to an interior side of the chamber bottom and adapted to support a large area substrate thereon.
摘要翻译： 提供具有加强室体的处理室。 加强室体可以包括一个或多个室壁，室底部和附接到室底部的外侧的室支撑组件。 腔室支撑组件可以包括一个或多个细长的基部支撑结构和连接到一个或多个细长的基部支撑结构的一个或多个横向支撑结构。 处理室还可以包括附接到室底部的内侧并适于在其上支撑大面积基板的多个基板支撑销。
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公开(公告)号：US20070012558A1
公开(公告)日：2007-01-18
申请号：US11182034
申请日：2005-07-13
申请人： John White , Akihiro Hosokawa , Hienminh Le , Makoto Inagawa
发明人： John White , Akihiro Hosokawa , Hienminh Le , Makoto Inagawa
CPC分类号： H01J37/3408 , C23C14/35 , H01J37/3438 , H01L21/68742
摘要： The present invention generally provides an apparatus and method for processing a surface of a substrate in physical vapor deposition (PVD) chamber that has an increased anode surface area to improve the deposition uniformity on large area substrates. In general, aspects of the present invention can be used for flat panel display processing, semiconductor processing, solar cell processing, or any other substrate processing. In one aspect, the processing chamber contains one or more adjustable anode assemblies that are used to increase and more evenly distribute the anode surface area throughout the processing region of the processing chamber. In one aspect, the one or more adjustable anode assemblies are adapted to exchange deposited on anode surfaces with new, un-deposited on, anode surfaces without breaking vacuum. In another aspect, a shadow frame that has a path to ground is adapted to contact a deposited layer on the surface of a substrate during deposition to increase the anode area and thus deposition uniformity.
摘要翻译： 本发明通常提供一种用于处理物理气相沉积（PVD）室中的衬底的表面的装置和方法，其具有增加的阳极表面积以改善大面积衬底上的沉积均匀性。 通常，本发明的各方面可用于平板显示处理，半导体处理，太阳能电池处理或任何其它基板处理。 在一个方面，处理室包含一个或多个可调阳极组件，其用于增加并且更均匀地分布整个处理室的整个处理区域中的阳极表面区域。 在一个方面，一个或多个可调节阳极组件适于在不破坏真空的情况下交换沉积在阳极表面上的新的未沉积的阳极表面。 在另一方面，具有到地的路径的阴影框架适于在沉积期间接触衬底的表面上的沉积层以增加阳极区域并因此沉积均匀性。
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公开(公告)号：US06773562B1
公开(公告)日：2004-08-10
申请号：US09026575
申请日：1998-02-20
IPC分类号： C23C1434
CPC分类号： H01L21/68721 , C23C14/042 , C23C14/50 , C23C14/564 , H01J37/32642 , H01L21/67069
摘要： A vacuum processing chamber with walls defining a cavity for processing a substrate. The processing chamber includes a substrate support for supporting a substrate being processed in the cavity, a shadow frame for preventing processing of a perimeter portion of the substrate, and a shadow frame support supporting the shadow frame within the cavity. The shadow frame is positionable with a gap between an underside of the shadow frame and an upper surface of the substrate. At least one conductive element insulated from the walls and establishes a conductive path from the shadow frame to outside the cavity. The conductive path may be used to discharge charge from the shadow frame at a rate sufficient to prevent a voltage differential from accumulating between the shadow frame and the substrate which would cause arcing therebetween, or to apply a bias voltage to the shadow frame sufficient to attract particles to reduce contamination of the substrate.
摘要翻译： 具有限定用于处理基板的空腔的壁的真空处理室。 处理室包括用于支撑在空腔中被处理的基板的基板支撑件，用于防止基板的周边部分的处理的阴影框架以及支撑在该空腔内的阴影框架的阴影框架支架。 阴影框架可以在阴影框架的下侧和基板的上表面之间的间隙定位。 至少一个导电元件与墙壁绝缘，并形成从阴影框架到腔体外部的导电路径。 导电路径可以用于以足以防止电压差积聚在阴影框架和衬底之间的电压差的速率从阴影框架中放电，这将导致它们之间的电弧放电，或者将偏置电压施加到足以吸引的阴影框架 颗粒以减少基材的污染。
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公开(公告)号：US09222165B2
公开(公告)日：2015-12-29
申请号：US13353136
申请日：2012-01-18
CPC分类号： C23C14/042 , C23C14/50 , C23C14/564 , H01J37/32458 , H01J37/32623 , H01J37/32651 , H01J37/32715
摘要： The present invention generally comprises a top shield for shielding a shadow frame within a PVD chamber. The top shield may remain in a stationary position and at least partially shield the shadow frame to reduce the amount of material that may deposit on the shadow frame during processing. The top shield may be cooled to reduce the amount of fluxuation in temperature of the top shield and shadow frame during processing and/or during down time.
摘要翻译： 本发明通常包括用于屏蔽PVD室内的阴影框架的顶部屏蔽件。 顶部屏蔽可以保持在静止位置，并且至少部分地遮蔽阴影框架以减少在处理期间可能沉积在阴影框架上的材料的量。 顶部屏蔽可以被冷却以减少处理期间和/或在停机期间顶部屏蔽和阴影框架的温度的变化量。
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公开(公告)号：US07432184B2
公开(公告)日：2008-10-07
申请号：US11213662
申请日：2005-08-26
CPC分类号： H01L21/67201 , C23C14/566 , C23C14/568 , H01L21/67167 , H01L21/67184 , H01L21/67196 , H01L29/66765
摘要： A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one load lock chamber, at least one first physical vapor deposition (PVD) chamber configured to deposit a first material layer on a substrate, and at least one second PVD chamber for in-situ deposition of a second material layer over the first material layer within the same substrate processing system without breaking the vacuum or taking the substrate out of the substrate processing system to prevent surface contamination, oxidation, etc. The substrate processing system is configured to provide high throughput and compact footprint for in-situ sputtering of different material layers in designated PVD chambers.
摘要翻译： 提供了一种制造包含一个或多个含金属层的膜堆叠的方法和用于在基板上形成膜堆叠的基板处理系统。 衬底处理系统包括耦合到至少一个负载锁定室的至少一个传送室，被配置成将第一材料层沉积在衬底上的至少一个第一物理气相沉积（PVD）室和至少一个第二PVD室 在相同的基板处理系统内在第一材料层上沉积第二材料层而不破坏真空或将基板从基板处理系统取出以防止表面污染，氧化等。基板处理系统被配置为提供 高产量和紧凑的占地面积，用于在指定的PVD室中不同材料层的原位溅射。
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公开(公告)号：US20080067058A1
公开(公告)日：2008-03-20
申请号：US11852136
申请日：2007-09-07
CPC分类号： C23C14/3407 , H01J37/3435
摘要： The present invention generally comprises a monolithic sputtering target assembly for depositing material onto large area substrates. The sputtering target assembly may comprise both the sputtering target and the backing plate in one monolithic structure. By having the backing plate and sputtering target as a monolithic structure, bonding is not necessary. Additionally, cooling channels may be drilled into the monolithic structure so that cooling fluid may flow within the sputtering target assembly without the need for a separate cooling assembly resting on back of the sputtering target assembly.
摘要翻译： 本发明通常包括用于将材料沉积到大面积基板上的单片溅射靶组件。 溅射靶组件可以包括一个整体结构的溅射靶和背板两者。 通过将背板和溅射靶作为整体结构，不需要结合。 此外，可以将冷却通道钻入单片结构中，使得冷却流体可以在溅射靶组件内流动，而不需要在溅射靶组件的背面上放置单独的冷却组件。
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公开(公告)号：US20070048992A1
公开(公告)日：2007-03-01
申请号：US11213662
申请日：2005-08-26
申请人： Akihiro Hosokawa , Makoto Inagawa , Hienminh Le , John White
发明人： Akihiro Hosokawa , Makoto Inagawa , Hienminh Le , John White
IPC分类号： H01L21/44
CPC分类号： H01L21/67201 , C23C14/566 , C23C14/568 , H01L21/67167 , H01L21/67184 , H01L21/67196 , H01L29/66765
摘要： A method for making a film stack containing one or more metal-containing layers and a substrate processing system for forming the film stack on a substrate are provided. The substrate processing system includes at least one transfer chamber coupled to at least one load lock chamber, at least one first physical vapor deposition (PVD) chamber configured to deposit a first material layer on a substrate, and at least one second PVD chamber for in-situ deposition of a second material layer over the first material layer within the same substrate processing system without breaking the vacuum or taking the substrate out of the substrate processing system to prevent surface contamination, oxidation, etc. The substrate processing system is configured to provide high throughput and compact footprint for in-situ sputtering of different material layers in designated PVD chambers.
摘要翻译： 提供了一种制造包含一个或多个含金属层的膜堆叠的方法和用于在基板上形成膜堆叠的基板处理系统。 衬底处理系统包括耦合到至少一个负载锁定室的至少一个传送室，被配置成将第一材料层沉积在衬底上的至少一个第一物理气相沉积（PVD）室和至少一个第二PVD室 在相同的基板处理系统内在第一材料层上沉积第二材料层而不破坏真空或将基板从基板处理系统取出以防止表面污染，氧化等。基板处理系统被配置为提供 高产量和紧凑的占地面积，用于在指定的PVD室中不同材料层的原位溅射。
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