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    Method and apparatus for specimen fabrication
    11.
    发明授权
    Method and apparatus for specimen fabrication 有权
    用于样品制造的方法和装置

    公开(公告)号：US08796651B2

    公开(公告)日：2014-08-05

    申请号：US12929396

    申请日：2011-01-20

    申请人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

    发明人： Hiroyasu Shichi ,  Tohru Ishitani ,  Hidemi Koike ,  Kaoru Umemura ,  Eiichi Seya ,  Mitsuo Tokuda ,  Satoshi Tomimatsu ,  Hideo Kashima ,  Muneyuki Fukuda

    IPC分类号： G21G5/00

    CPC分类号： G01N23/20 ,  B23K15/0006 ,  B23K15/0013 ,  G01N1/286 ,  H01J2237/3114 ,  H01J2237/31745

    摘要： A sample fabricating method of irradiating a sample with a focused ion beam at an incident angle less than 90 degrees with respect to the surface of the sample, eliminating the peripheral area of a micro sample as a target, turning a specimen stage around a line segment perpendicular to the sample surface as a turn axis, irradiating the sample with the focused ion beam while the incident angle on the sample surface is fixed, and separating the micro sample or preparing the micro sample to be separated. A sample fabricating apparatus for forming a sample section in a sample held on a specimen stage by scanning and deflecting an ion beam, wherein an angle between an optical axis of the ion beam and the surface of the specimen stage is fixed and formation of a sample section is controlled by turning the specimen stage.

    摘要翻译： 相对于样品表面以小于90度的入射角照射具有聚焦离子束的样品的样品制造方法，消除作为目标的微量样品的周边区域，将样品台围绕线段 垂直于样品表面作为转动轴线，同时在样品表面上的入射角被固定的同时用聚焦离子束照射样品，并分离微量样品或制备待分离的微量样品。 一种样品制造装置，用于通过扫描和偏转离子束来形成保持在样品台上的样品中的样品部分，其中离子束的光轴与样品台的表面之间的角度被固定并形成样品 通过转动样品台来控制切片。

    SCANNING CHARGED PARTICLE MICROSCOPE
    12.
    发明申请
    SCANNING CHARGED PARTICLE MICROSCOPE 审中-公开
    扫描充电颗粒显微镜

    公开(公告)号：US20110254944A1

    公开(公告)日：2011-10-20

    申请号：US13122532

    申请日：2009-10-02

    申请人： Tohru Ishitani ,  Isao Nagaoki

    发明人： Tohru Ishitani ,  Isao Nagaoki

    IPC分类号： H04N7/18 ,  G06K9/36

    CPC分类号： H01J37/28 ,  H01J37/09 ,  H01J37/222 ,  H01J2237/0216 ,  H01J2237/223 ,  H01J2237/2817

    摘要： When a scanning image of a scanning charged particle microscope is impaired by an external disturbance, a disturbance frequency can be simply and precisely analyzed from the image in order to specify the external disturbance. The maximum frequency analyzable by the scanning charged particle microscope can also be increased up to several kHz, which is the rotation frequency of, for example, a turbo-molecular pump commonly used as an exhaust pump of the scanning charged particle microscope. In an FFT analysis of a stripe pattern which is an impairment of the scanning image, the scanning charged particle microscope performs a one-dimensional FFT (1D-FFT) in the Y-direction (sub-deflection direction of the charged particle beam) or a one-dimensional DFT (1D-DFT) in the X-direction (main deflection direction of the charged particle beam). To extend the analyzable maximum frequency up to several kHz, the scanning charged particle microscope also performs the 1D-FFT (or 1D-DFT) analysis in the X-direction (main deflection direction of the charged particle beam) along which the charged particle beam has a fast scanning speed.

    摘要翻译： 当扫描带电粒子显微镜的扫描图像被外部干扰削弱时，可以从图像中简单且精确地分析干扰频率，以便指定外部干扰。 通过扫描带电粒子显微镜可分析的最大频率也可以增加到几kHz，这是例如通常用作扫描带电粒子显微镜的排气泵的涡轮分子泵的旋转频率。 扫描带电粒子显微镜在对扫描图像的损伤的条纹图案进行FFT分析时，在Y方向（带电粒子束的副偏转方向）上进行一维FFT（1D-FFT）或 在X方向（带电粒子束的主偏转方向）上的一维DFT（1D-DFT）。 为了将可分析的最大频率扩展到几kHz，扫描带电粒子显微镜还可以在带电粒子束的X方向（带电粒子束的主偏转方向）上进行1D-FFT（或1D-DFT）分析 扫描速度快。

    Liquid metal ion gun
    13.
    发明授权
    Liquid metal ion gun 有权
    液态金属离子枪

    公开(公告)号：US07804073B2

    公开(公告)日：2010-09-28

    申请号：US12076481

    申请日：2008-03-19

    申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

    发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

    IPC分类号： H01J49/10 ,  H01J27/02

    CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

    摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

    摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。

    Image evaluation method and microscope
    15.
    发明授权
    Image evaluation method and microscope 失效
    图像评估方法和显微镜

    公开(公告)号：US07236651B2

    公开(公告)日：2007-06-26

    申请号：US10219765

    申请日：2002-08-16

    申请人： Tohru Ishitani ,  Mitsugu Sato ,  Hideo Todokoro ,  Tadashi Otaka ,  Takashi Iizumi ,  Atsushi Takane

    发明人： Tohru Ishitani ,  Mitsugu Sato ,  Hideo Todokoro ,  Tadashi Otaka ,  Takashi Iizumi ,  Atsushi Takane

    IPC分类号： G06K9/32 ,  G21K7/00 ,  G09G5/02

    CPC分类号： H01J37/28 ,  H01J37/222 ,  H01J37/263 ,  H01J2237/2823

    摘要： Image evaluation method capable of objectively evaluating the image resolution of a microscope image. An image resolution method is characterized in that resolution in partial regions of an image is obtained over an entire area of the image or a portion of the image, averaging is performed over the entire area of the image or the portion of the image, and the averaged value is established as the resolution evaluation value of the entire area of the image or the portion of the image. This method eliminates the subjective impressions of the evaluator from evaluation of microscope image resolution, so image resolution evaluation values of high accuracy and good repeatability can be obtained.

    摘要翻译： 能够客观评价显微镜图像的图像分辨率的图像评价方法。 图像分辨方法的特征在于，在图像的整个区域或图像的一部分上获得图像的部分区域中的分辨率，在图像的整个区域或图像的整个区域上进行平均化， 建立平均值作为图像的整个区域或图像的部分的分辨率评估值。 该方法消除了评估者对显微镜图像分辨率评估的主观印象，因此可以获得高精度和良好重复性的图像分辨率评估值。

    Focused ion beam apparatus
    17.
    发明申请
    Focused ion beam apparatus 有权
    聚焦离子束装置

    公开(公告)号：US20050279952A1

    公开(公告)日：2005-12-22

    申请号：US11151425

    申请日：2005-06-14

    申请人： Tohru Ishitani ,  Hiroyuki Muto ,  Yuichi Madokoro

    发明人： Tohru Ishitani ,  Hiroyuki Muto ,  Yuichi Madokoro

    IPC分类号： G21K5/10

    CPC分类号： H01J37/28 ,  H01J37/12 ,  H01J2237/04924 ,  H01J2237/121 ,  H01J2237/31749

    摘要： In order to implement faster high precision milling and high resolution image observation in the structure analysis and failure analysis of the MEMS and semiconductor devices, a two-lens optical system is mounted on a focused ion beam apparatus, and in the optical system the distance from an emitter apex in an ion source to an earth electrode included in a condenser lens and disposed nearest to the ion source is in the range of 5 to 14 mm.

    摘要翻译： 为了在MEMS和半导体器件的结构分析和故障分析中实现更快的高精度铣削和高分辨率图像观察，将双透镜光学系统安装在聚焦离子束装置上，并且在光学系统中距离 离子源中的发射极顶点包括在聚光透镜中并且最靠近离子源设置的接地电极在5至14mm的范围内。

    Liquid metal ion gun
    18.
    发明申请
    Liquid metal ion gun 失效
    液态金属离子枪

    公开(公告)号：US20050127304A1

    公开(公告)日：2005-06-16

    申请号：US11004903

    申请日：2004-12-07

    申请人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

    发明人： Hiroyasu Kaga ,  Yuichi Madokoro ,  Shigeru Izawa ,  Tohru Ishitani ,  Kaoru Umemura

    IPC分类号： H01J27/26 ,  G21G5/00 ,  H01J27/00 ,  H01J27/02 ,  H01J37/08

    CPC分类号： H01J27/02 ,  H01J27/22 ,  H01J37/08 ,  H01J2237/0805

    摘要： An emitter of a Ga liquid metal ion source is constituted to include W12 of a base material and Ga9 of an ion source element covering a surface as construction materials. By making back-sputtered particles become elements (W and Ga) of the Ga liquid metal ion sour source, if back-sputtered particles attach to the Ga liquid metal ion source, contamination which may change physical characteristics of Ga9 does not occur. A W aperture is used as a beam limiting (GUN) aperture to place Ga of approx. 25 mg (of melting point of 30° C.) on a surface of a portion included in a beam emission region (Ga store). When emitting ions to the beam limiting (GUN) aperture, Ga in the emission region melts and diffuses on a surface of the beam emission region of the W aperture.

    摘要翻译： Ga液体金属离子源的发射极构成为包括基材的W12和覆盖表面的离子源元素的Ga9作为构造材料。 通过使反溅射的颗粒成为Ga液态金属离子源的元素（W和Ga），如果反溅射的颗粒附着到Ga液态金属离子源，则不会发生可能改变Ga9的物理特性的污染物。 使用W光圈作为光束限制（GUN）光圈来放置大约的Ga。 在束发射区域（Ga储存）中包含的部分的表面上25mg（熔点为30℃））。 当将离子发射到光束限制（GUN）孔径时，发射区域中的Ga在W光阑的束发射区域的表面上熔化并扩散。