公开(公告)号：US06541298B2

公开(公告)日：2003-04-01

申请号：US09964696

申请日：2001-09-28

申请人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Iida ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： H01L2100

CPC分类号： H01L27/1467 ,  G01J5/10 ,  G01J5/20 ,  H01L27/14632 ,  H01L27/14687 ,  H01L27/14692

摘要： An infrared sensor including a substrate, a plurality of infrared detection pixels arrayed on a substrate with each of the infrared detection pixels including an infrared absorption portion formed over the substrate and configured to absorb infrared radiation, a thermoelectric converter portion formed over the substrate and configured to convert a temperature change in the infrared absorption portion into an electrical signal, and support structures configured to support the thermoelectric converter portion and the infrared absorption portion over the substrate via a separation space, the support structures having conductive interconnect layers configured to deliver the electrical signal from the thermoelectric converter portion to the substrate. The infrared sensor further includes a pixel selection circuit configured to select at least one of the infrared detection pixels which delivers the electrical signal and an output circuit configured to output the electrical signal delivered from selected infrared detection pixels via the conductive interconnect layers. The conductive interconnect layers include a material the same as a material of gate layers of the MOS transistors, and have a thickness similar to the gate layers.

摘要翻译： 一种红外线传感器，包括基板，在基板上排列的多个红外线检测像素，其中，所述红外线检测像素包括形成在所述基板上的红外线吸收部，构成为吸收红外线的辐射;形成在所述基板上的热电转换部， 将红外吸收部分的温度变化转换为电信号，以及支撑结构，其被配置为经由分离空间将热电转换器部分和红外吸收部分支撑在衬底上，所述支撑结构具有导电互连层， 信号从热电转换器部分到基板。 红外传感器还包括被配置为选择传送电信号的红外检测像素中的至少一个的像素选择电路和被配置为经由导电互连层输出从所选择的红外检测像素传送的电信号的输出电路。 导电互连层包括与MOS晶体管的栅极层的材料相同的材料，并且具有类似于栅极层的厚度。

公开(公告)号：US07067810B2

公开(公告)日：2006-06-27

申请号：US10393259

申请日：2003-03-21

申请人： Keitaro Shigenaka ,  Naoya Mashio

发明人： Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： H01L25/00

CPC分类号： H01L27/14669 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14683

摘要： A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.

摘要翻译： 一种热式红外线成像装置的制造方法，其包括在单晶硅层中形成多个二极管作为构成热电转换部的第一和第二热电转换部; 形成要连接到多个单元的输入和输出布线; 形成暴露单晶硅衬底的多个开口部; 形成第一光热转换层; 以及经由所述多个开口部分选择性地去除所述单晶硅衬底的一部分。

公开(公告)号：US20060131506A1

公开(公告)日：2006-06-22

申请号：US11352339

申请日：2006-02-13

申请人： Keitaro Shigenaka ,  Naoya Mashio

发明人： Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： G01T1/24

CPC分类号： H01L27/14669 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14683

摘要： A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.

摘要翻译： 一种热式红外线成像装置的制造方法，其包括在单晶硅层中形成多个二极管作为构成热电转换部的第一和第二热电转换部; 形成要连接到多个单元的输入和输出布线; 形成暴露单晶硅衬底的多个开口部; 形成第一光热转换层; 以及经由所述多个开口部分选择性地去除所述单晶硅衬底的一部分。

公开(公告)号：US20050061978A1

公开(公告)日：2005-03-24

申请号：US10960987

申请日：2004-10-12

申请人： Yoshinori Ilda ,  Keitaro Shigenaka ,  Naoya Mashio

发明人： Yoshinori Ilda ,  Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： G01J1/02 ,  G01J5/20 ,  G01J5/24 ,  H01L21/28 ,  H01L27/14 ,  H01L27/146 ,  H01L27/16 ,  H01L29/423 ,  H01L29/43 ,  H01L29/49 ,  H01L29/786 ,  H01L31/09 ,  H01L37/02

CPC分类号： G01J5/08 ,  G01J5/0853 ,  G01J5/20 ,  H01L27/14649 ,  H01L27/16

摘要： A method for manufacturing an infrared sensor, including preparing a substrate including a supporting member made of single crystalline silicon, a first layer made of silicon oxide formed on the supporting member, and a second layer made of single crystalline silicon formed on the first layer, embedding a silicon oxide layer over the second layer, forming an infrared detection pixel in the second layer, the infrared detection pixel having a function of converting heat into an electric signal, forming a supporting beam line including a U-shaped electric conductor on the silicon oxide layer, while forming a gate electrode of a MOS transistor of a peripheral circuit on the second layer, the gate electrode having an electric conductor with U-shaped cross section, forming an infrared absorption layer on the second layer, the infrared absorption layer having a function of converting an infrared ray into heat, and etching the second layer to form a hole for isolating the infrared detection pixel from of the substrate and suspending the infrared detection pixel within the hole by the supporting beam line.

摘要翻译： 一种制造红外线传感器的方法，包括制备包括由单晶硅制成的支撑构件的基板，形成在支撑构件上的由氧化硅制成的第一层和形成在第一层上的单晶硅制成的第二层， 在第二层上嵌入氧化硅层，在第二层中形成红外检测像素，红外检测像素具有将热量转换成电信号的功能，在硅上形成包括U形导体的支撑束线 氧化层，同时在第二层上形成外围电路的MOS晶体管的栅电极，栅电极具有U形横截面的导电体，在第二层上形成红外吸收层，红外线吸收层具有 将红外线转换为热的功能，以及蚀刻第二层以形成用于隔离红外线检测pi的孔 从衬底起xel并通过支撑束线将红外检测像素悬挂在孔内。

公开(公告)号：US07193211B2

公开(公告)日：2007-03-20

申请号：US11352339

申请日：2006-02-13

申请人： Keitaro Shigenaka ,  Naoya Mashio

发明人： Keitaro Shigenaka ,  Naoya Mashio

IPC分类号： H01L25/00

CPC分类号： H01L27/14669 ,  H01L27/1463 ,  H01L27/14649 ,  H01L27/14683

摘要： A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.

摘要翻译： 一种热式红外线成像装置的制造方法，其包括在单晶硅层中形成多个二极管作为构成热电转换部的第一和第二热电转换部; 形成要连接到多个单元的输入和输出布线; 形成暴露单晶硅衬底的多个开口部; 形成第一光热转换层; 以及经由所述多个开口部分选择性地去除所述单晶硅衬底的一部分。

公开(公告)号：US07145142B2

公开(公告)日：2006-12-05

申请号：US10306160

申请日：2002-11-29

申请人： Hideyuki Funaki ,  Keitaro Shigenaka ,  Yujiro Naruse ,  Ikuo Fujiwara ,  Naoya Mashio

发明人： Hideyuki Funaki ,  Keitaro Shigenaka ,  Yujiro Naruse ,  Ikuo Fujiwara ,  Naoya Mashio

IPC分类号： G01J5/24 ,  H01L27/14 ,  H01L31/105 ,  H03K3/42 ,  C12Q1/68

CPC分类号： G01J5/24 ,  C12Q1/68 ,  C12Q1/6837 ,  G01J5/023 ,  G01J5/20 ,  C12Q2565/607

摘要： A sensor device includes a sensor array in which infrared sensors are arrayed and a detection circuit connected to the output signal line of the sensor array. The detection circuit includes a capacitor having a charging circuit which is selectively driven, a sense amplifier circuit which detects and amplifies a change in sensor current flowing to the output signal line, a current-to-voltage conversion circuit which converts the output current from the sense amplifier circuit into a voltage, a discharging circuit which is controlled by the output voltage of the current-to-voltage conversion circuit to discharge the capacitor, and an output circuit which outputs the terminal voltage of the capacitor.

摘要翻译： 传感器装置包括其中布置有红外传感器的传感器阵列和连接到传感器阵列的输出信号线的检测电路。 检测电路包括具有选择性驱动的充电电路的电容器，检测并放大流向输出信号线的传感器电流的变化的读出放大器电路，将输出电流从 感测放大器电路变为电压，放电电路由电流 - 电压转换电路的输出电压控制以对电容器进行放电;以及输出电路，其输出电容器的端子电压。