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26 条记录 (耗时 0.046 秒)

    PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS USING AQUA REGIA WITH MICROWAVE ASSISTED HEATING
    12.
    发明申请
    PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS USING AQUA REGIA WITH MICROWAVE ASSISTED HEATING 失效
    使用微波炉辅助加热的NiPtSi应用去除Ni和Pt残留物的工艺

    公开(公告)号：US20130115741A1

    公开(公告)日：2013-05-09

    申请号：US13292906

    申请日：2011-11-09

    申请人： Anh Duong ,  Olov Karlsson

    发明人： Anh Duong ,  Olov Karlsson

    IPC分类号： H01L21/336 ,  B08B7/00 ,  B08B3/08 ,  H01L21/28

    CPC分类号： H01L21/02068 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/007 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/7848

    摘要： The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process, comprising using an aqua regia cleaning solution (comprising a mixture of nitric acid and hydrochloric acid) with microwave assisted heating. Low boiling temperature of hydrochloric acid prevents heating the aqua regia solution to a high temperature, impeding the effectiveness of post silicidation nickel and platinum residue removal. Therefore, embodiments of the invention provide a microwave assisted heating of the substrate in an aqua regia solution, selectively heating platinum residues without significantly increasing the temperature of the aqua regia solution, rendering platinum residues to be more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

    摘要翻译： 本发明公开了一种在镍铂硅化过程中从半导体衬底中清除残留物的方法，其中包括使用王水清洗溶液（包括硝酸和盐酸的混合物）与微波辅助加热。 盐酸的低沸点温度可防止将王水溶液加热至高温，阻止后硅化镍和铂残渣去除的有效性。 因此，本发明的实施方案提供了在王水溶液中微波辅助加热底物，选择性地加热铂残余物而不显着提高王水溶液的温度，使铂残留物更易溶于水溶液，从而将其从 衬底的表面。

    HIGH PRODUCTIVITY COMBINATORIAL WORKFLOW FOR PHOTORESIST STRIP APPLICATIONS
    16.
    发明申请
    HIGH PRODUCTIVITY COMBINATORIAL WORKFLOW FOR PHOTORESIST STRIP APPLICATIONS 失效
    高效生产力组合工作流程用于光栅条纹应用

    公开(公告)号：US20130130414A1

    公开(公告)日：2013-05-23

    申请号：US13298524

    申请日：2011-11-17

    申请人： Bei Li ,  Sean Barstow ,  Anh Duong ,  Zhendong Hong ,  Ashley Lacey

    发明人： Bei Li ,  Sean Barstow ,  Anh Duong ,  Zhendong Hong ,  Ashley Lacey

    IPC分类号： H01L21/66

    CPC分类号： H01L22/14 ,  G03F7/422 ,  H01L22/20

    摘要： Electrical testing of metal oxide semiconductor (MOS) high-k capacitor structures is used to evaluate photoresist strip or cleaning chemicals using a combinatorial workflow. The electrical testing can be able to identify the damages on the high-k dielectrics, permitting a selection of photoresist strip chemicals to optimize the process conditions in the fabrication of semiconductor devices. The high productivity combinatorial technique can provide a compatibility evaluation of photoresist strip chemicals with high-k devices.

    摘要翻译： 金属氧化物半导体（MOS）高k电容器结构的电气测试用于使用组合工作流程来评估光致抗蚀剂条或清洁化学品。 电气测试能够识别高k电介质上的损伤，允许选择光致抗蚀剂胶带化学品来优化半导体器件制造过程中的工艺条件。 高生产率组合技术可以提供具有高k器件的光致抗蚀剂剥离化学品的兼容性评估。

    Process to remove Ni and Pt residues for NiPtSi applications using aqua regia with microwave assisted heating
    18.
    发明授权
    Process to remove Ni and Pt residues for NiPtSi applications using aqua regia with microwave assisted heating 失效
    使用微波辅助加热法去除NiPtSi应用的Ni和Pt残余物的方法

    公开(公告)号：US08697573B2

    公开(公告)日：2014-04-15

    申请号：US13292906

    申请日：2011-11-09

    申请人： Anh Duong ,  Olov Karlsson

    发明人： Anh Duong ,  Olov Karlsson

    IPC分类号： H01L21/44

    CPC分类号： H01L21/02068 ,  C11D7/08 ,  C11D11/0047 ,  C11D11/007 ,  H01L21/28052 ,  H01L21/28518 ,  H01L29/665 ,  H01L29/66575 ,  H01L29/7848

    摘要： The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process, comprising using an aqua regia cleaning solution (comprising a mixture of nitric acid and hydrochloric acid) with microwave assisted heating. Low boiling temperature of hydrochloric acid prevents heating the aqua regia solution to a high temperature, impeding the effectiveness of post silicidation nickel and platinum residue removal. Therefore, embodiments of the invention provide a microwave assisted heating of the substrate in an aqua regia solution, selectively heating platinum residues without significantly increasing the temperature of the aqua regia solution, rendering platinum residues to be more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

    摘要翻译： 本发明公开了一种在镍铂硅化过程中从半导体衬底中清除残留物的方法，其中包括使用王水清洗溶液（包括硝酸和盐酸的混合物）与微波辅助加热。 盐酸的低沸点温度可防止将王水溶液加热至高温，阻止后硅化镍和铂残渣去除的有效性。 因此，本发明的实施方案提供了在王水溶液中微波辅助加热底物，选择性地加热铂残余物而不显着提高王水溶液的温度，使铂残留物更易溶于水溶液，从而将其从 衬底的表面。

    PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS USING CHLORINE GAS
    19.
    发明申请
    PROCESS TO REMOVE Ni AND Pt RESIDUES FOR NiPtSi APPLICATIONS USING CHLORINE GAS 有权
    使用氯仿气体去除NiPtSi应用的Ni和Pt残留物的工艺

    公开(公告)号：US20130122670A1

    公开(公告)日：2013-05-16

    申请号：US13295333

    申请日：2011-11-14

    申请人： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

    发明人： Anh Duong ,  John Foster ,  Olov Karlsson ,  James Mavrinac ,  Usha Raghuram

    IPC分类号： H01L21/336 ,  B08B3/08 ,  H01L21/28

    CPC分类号： H01L21/324 ,  H01L21/02068 ,  H01L21/28 ,  H01L21/28052 ,  H01L21/28518 ,  H01L21/67028 ,  H01L21/67057 ,  H01L29/665

    摘要： The invention discloses a method for cleaning residues from a semiconductor substrate during a nickel platinum silicidation process. Post silicidation residues of nickel and platinum may not be removed adequately just by an aqua regia solution (comprising a mixture of nitric acid and hydrochloric acid). Therefore, embodiments of the invention provide a multi-step residue cleaning, comprising exposing the substrate to an aqua regia solution, followed by an exposure to a chlorine gas or a solution comprising dissolved chlorine gas, which may further react with remaining platinum residues, rendering it more soluble in aqueous solution and thereby dissolving it from the surface of the substrate.

    摘要翻译： 本发明公开了一种在镍铂硅化过程中清除半导体衬底的残留物的方法。 镍和铂的后硅化残留物只能通过王水溶液（包括硝酸和盐酸的混合物）而被充分除去。 因此，本发明的实施方案提供多步残留物清洗，包括将底物暴露于王水溶液，随后暴露于氯气或包含溶解的氯气的溶液中，其可进一步与剩余的铂残基反应，使得 它更可溶于水溶液，从而从基底表面溶解。

    Composition and Method to Remove Excess Material During Manufacturing of Semiconductor Devices
    20.
    发明申请
    Composition and Method to Remove Excess Material During Manufacturing of Semiconductor Devices 有权
    在半导体器件制造期间去除多余材料的组成和方法

    公开(公告)号：US20120273010A1

    公开(公告)日：2012-11-01

    申请号：US13094967

    申请日：2011-04-27

    申请人： Anh Duong

    发明人： Anh Duong

    IPC分类号： B08B3/00 ,  C11D7/60

    CPC分类号： C11D7/3209 ,  C11D7/263 ,  C11D7/3218 ,  C11D7/34 ,  C11D7/5013 ,  C11D7/5022 ,  H01L21/02068 ,  H01L21/28518

    摘要： A composition of matter and method to remove excess material during the manufacturing of semiconductor devices includes providing a substrate; applying a metal chelator mixture to the substrate, where the metal chelator mixture comprising a metal chelator and a solvent, where the metal chelator binds to the platinum residue, to render the platinum residue soluble; and rinsing the metal chelator mixture from the substrate to remove the platinum residue from the silicide.

    摘要翻译： 在制造半导体器件期间除去多余材料的物质组成和方法包括提供衬底; 将金属螯合剂混合物施加到基底上，其中金属螯合剂混合物包含金属螯合剂和溶剂，其中金属螯合剂与铂残基结合，使铂残基可溶; 并从底物上冲洗金属螯合剂混合物以从硅化物中除去铂残基。