摘要:
A method of modifying a layout of a plurality of objects in accordance with a plurality of predetermined criteria is presented. An objective function is defined for measuring a location perturbation and a separation perturbation of the objects in the layout. A linear system is defined using linear constraints in terms of design rules and the objective function to describe separations between layout objects. The linear system is solved to simultaneously remove violations of the design rules, and shapes and positions of objects in the layout are modified in accordance with the solution of the linear system such that a total perturbation of the objects in the layout is reduced. A system for implementing the present invention is also presented.
摘要:
The inventive method comprises chemically-mechanically polishing a substrate with a polishing composition comprising a liquid carrier and sol-gel colloidal silica abrasive particles.
摘要:
The invention provides a chemical-mechanical polishing composition consisting essentially of silica, an oxidizing agent, a quaternary ammonium compound, and water. The invention further provides a method of chemically-mechanically polishing a substrate with the aforementioned polishing composition. The polishing composition provides for enhanced polishing rates when used to polish dielectric films.
摘要:
The present invention provides a method for polishing silicon nitride-containing substrates. The method comprises abrading a surface of a silicon nitride substrate with a polishing composition, which comprises colloidal silica, at least one acidic component, and an aqueous carrier. The at least one acidic component has a pKa in the range of about 1 to 4.5. The composition has a pH in the range of about 0.5 pH units less than the pKa of the at least one acidic component to about 1.5 pH units greater than the pKa.
摘要:
The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives). The invention further provides a method of chemically-mechanically polishing a substrate with the CMP compositions, as well as a method of enhancing the shelf-life of CMP compositions containing an amine and a radical-forming oxidizing agent, in which a radical trapping agent is added to the CMP composition.
摘要:
The inventive chemical-mechanical polishing composition comprises an abrasive, a nitride accelerator, and water, and has a pH of about 1 to about 6. The inventive method of polishing a substrate involves the use of the aforesaid polishing composition and is particularly useful in polishing a substrate containing silicon nitride.
摘要:
Devices that include a dichroic material sandwiched between first and second electrodes layers and exhibiting a high optical absorption when the first and second electrode layers are biased at a first electrical bias state and a low optical absorption when the first and second electrode layers are biased at a second, different electrical bias state. Such devices may be used to construct optically reflective devices such as anti-glare mirrors and optically transmissive devices such as eye glasses. The dichroic material may be selected to be operable to switch between the high optical absorption and the low optical absorption in less than 0.1 second.
摘要:
The present invention relates to a preparation method of a high-stable non-ionic N-vinyl butyrolactam iodine, wherein non-ionic N-vinyl butyrolactam, iodine and at least one grinding aid are stirred at 150-800 r/min at a temperature of 50° C.-90° C. for 1 to 12 hours to prepare the high-stable non-ionic N-vinyl butyrolactam iodine, wherein the K value of the non-ionic N-vinyl butyrolactam is 32±1, the PD value of the main peak of the non-ionic N-vinyl butyrolactam is ≦1.6, the moisture content of the non-ionic N-vinyl butyrolactam is ≦2.5%, preferably, the grinding aid is selected one or several from sodium chloride, sodium citrate, sodium carbonate and sodium phosphate, the amount of the grinding aid added is 0.02 to 2% of the total amount of the non-ionic N-vinyl butyrolactam and the iodine, the non-ionic N-vinyl butyrolactam is PVP-K32, the high-stable non-ionic N-vinyl butyrolactam iodine prepared by the above mentioned method is also provided, the stability of the high-stable non-ionic N-vinyl butyrolactam iodine of the present invention is high, thereby facilitating long-term storage and use, thus the high-stable non-ionic N-vinyl butyrolactam iodine is suitable for large-scale popularization.
摘要:
The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives).
摘要:
The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives).