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公开(公告)号:US11747396B2
公开(公告)日:2023-09-05
申请号:US16943353
申请日:2020-07-30
IPC分类号: G01R31/317 , G02B6/42 , G01N21/31
CPC分类号: G01R31/3171 , G01N21/31 , G02B6/4226 , G01N2201/06113 , G01N2201/08
摘要: A hybrid optical-electrical automated testing equipment (ATE) system can implement a workpress assembly that can interface with a device under test (DUT) and a load board that holds the DUT during testing, analysis, and calibration. A test hand can actuate to position the DUT on a socket and align one or more alignment features. The workpress assembly can include two optical interfaces that are optically coupled such that light can be provided to a side of the DUT that is facing away from the load board, thereby enabling the ATE system to perform simultaneous optical and electrical testing of the DUT.
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公开(公告)号:US20230216271A1
公开(公告)日:2023-07-06
申请号:US17566318
申请日:2021-12-30
发明人: John Parker , Molly Piels , Hanxing Shi
CPC分类号: H01S5/026 , G02B6/4266 , H01S5/12 , H01S5/0085 , H01S5/042
摘要: A symmetric distributed feedback (DFB) laser that is integrated in a silicon based photonic integrated circuit can output light from both sides of the symmetric DFB laser onto waveguides. The light in the waveguides can be phase adjusted and combined using an optical coupler. The symmetric DFB laser can generate light and symmetrically output light onto different lanes of a multi-lane transmitter.
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公开(公告)号:US20230117058A1
公开(公告)日:2023-04-20
申请号:US18084028
申请日:2022-12-19
发明人: John Parker , Benjamin M. Curtin
IPC分类号: G02B6/122
摘要: Absolute temperature measurements of integrated photonic devices can be accomplished with integrated bandgap temperature sensors located adjacent the photonic devices. In various embodiments, the temperature of the active region within a diode structure of a photonic device is measured with an integrated bandgap temperature sensor that includes one or more diode junctions either in the semiconductor device layer beneath the active region or laterally adjacent to the photonic device, or in a diode structure formed above the semiconductor device layer and adjacent the diode structure of the photonic device.
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公开(公告)号:US11573123B2
公开(公告)日:2023-02-07
申请号:US17554291
申请日:2021-12-17
IPC分类号: G01J3/02 , G01J3/18 , G02B6/12 , G02B6/42 , G02B6/34 , G02F1/025 , H01S5/40 , G01J3/10 , H01S5/02 , H01S5/026
摘要: Described herein are optical sensing devices for photonic integrated circuits (PICs). A PIC may comprise a plurality of waveguides formed in a silicon on insulator (SOI) substrate, and a plurality of heterogeneous lasers, each laser formed from a silicon material of the SOI substrate and to emit an output wavelength comprising an infrared wavelength. Each of these lasers may comprise a resonant cavity included in one of the plurality of waveguides, and a gain material comprising a non-silicon material and adiabatically coupled to the respective waveguide. A light directing element may direct outputs of the plurality of heterogeneous lasers from the PIC towards an object, and one or more detectors may detect light from the plurality of heterogeneous lasers reflected from or transmitted through the object.
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公开(公告)号:US20220352981A1
公开(公告)日:2022-11-03
申请号:US17866129
申请日:2022-07-15
发明人: Steven William Keck
IPC分类号: H04B10/073 , G01R31/28
摘要: A hybrid automated testing equipment (ATE) system can simultaneously test electrical and optical components of a device under test, such as an optical transceiver. The device under test can be a multilane optical transceiver that transmits different channels of data on different lanes. The hybrid ATE system can include one or more light sources and optical switches in an optical test lane selector to selectively test and calibrate each optical and electrical components of each lane of the device under test.
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公开(公告)号:US11937368B2
公开(公告)日:2024-03-19
申请号:US17222185
申请日:2021-04-05
CPC分类号: H05K1/0251 , H05K1/115 , H05K3/4038 , H05K3/46 , H05K2201/0776 , H05K2201/093
摘要: Described are various configurations of high-speed via structures. Various embodiments can reduce or entirely eliminate insertion loss in high-speed signal processing environments by using impedance compensation structures that decrease a mismatch in components of a circuit. An impedance compensation structure can include a metallic structure placed near a via to lower an impedance difference between the via and a conductive pathway connected to the via.
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公开(公告)号:US20240079849A1
公开(公告)日:2024-03-07
申请号:US17902334
申请日:2022-09-02
发明人: John Parker , Tom Mader , Steven B. Alleston
CPC分类号: H01S5/0265 , G02B6/12004 , H01S5/50 , G02B2006/12061 , G02B2006/12121 , G02B2006/12142 , G02B2006/12147 , G02B2006/1215
摘要: Disclosed is a coherent optical combining photonic integrated circuit that can detect and align light amplified by a scalable quantity of semiconductor optical amplifiers (SOAs). The light can be split into beams and amplified by individual SOAs in a PIC and combined via couplers in the PIC. The combined light can be measured using a photodetector and the light beams can be adjusted based the photodetector measurement to coherently combine the light to achieve high optical power from the photonic integrated circuit.
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公开(公告)号:US11846803B2
公开(公告)日:2023-12-19
申请号:US17554342
申请日:2021-12-17
IPC分类号: G02B6/12 , H01L21/12 , G02B6/122 , H01L21/762 , H01L21/02 , H01L21/306 , G02B6/132 , G02B6/136
CPC分类号: G02B6/122 , G02B6/132 , G02B6/136 , H01L21/0217 , H01L21/0228 , H01L21/02164 , H01L21/02178 , H01L21/02181 , H01L21/02186 , H01L21/02189 , H01L21/30617 , H01L21/76251
摘要: Methods and systems are presented for heterogeneous integration of photonics and electronics with atomic layer deposition (ALD) bonding. One method includes operations for forming a compound semiconductor and for depositing (e.g., via atomic layer deposition) a continuous film of a protection material (e.g., Al2O3) on a first surface of the compound semiconductor. Further, the method includes an operation for forming a silicon on insulator (SOI) wafer, with the SOI wafer comprising one or more waveguides. The method further includes bonding the compound semiconductor at the first surface to the SOI wafer to form a bonded structure and processing the bonded structure. The protection material protects the compound semiconductor from acid etchants during further processing of the bonded structure.
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公开(公告)号:US11700077B2
公开(公告)日:2023-07-11
申请号:US17142050
申请日:2021-01-05
IPC分类号: H04B10/079 , H04B10/291 , H04B10/293 , H04B10/294 , H04J14/02 , G02F1/225 , H01S5/50 , H04B10/40 , G02B6/12 , G02B6/122 , H01S5/068 , H01S5/0683 , H01S5/30 , H01S5/00 , G02F1/21
CPC分类号: H04J14/0221 , G02B6/12007 , G02B6/1225 , G02F1/225 , H01S5/0683 , H01S5/06804 , H01S5/3013 , H01S5/5027 , H04B10/0797 , H04B10/07955 , H04B10/2914 , H04B10/2935 , H04B10/2941 , H04B10/40 , G02B2006/12061 , G02B2006/12138 , G02B2006/12164 , G02F1/212 , H01S5/0078 , H01S2301/04
摘要: Described herein are photonic integrated circuits (PICs) comprising a semiconductor optical amplifier (SOA) to output a signal comprising a plurality of wavelengths, a sensor to detect data associated with a power value of each wavelength of the output signal of the SOA, a filter to filter power values of one or more of the wavelengths of the output signal of the SOA, and control circuitry to control the filter to reduce a difference between a pre-determined power value of each filtered wavelength of the output signal of the SOA and the detected power value of each filtered wavelength of the output signal of the SOA.
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公开(公告)号:US11700057B2
公开(公告)日:2023-07-11
申请号:US17866129
申请日:2022-07-15
发明人: Steven William Keck
IPC分类号: H04B10/073 , G01R31/28
CPC分类号: H04B10/0731 , G01R31/2889
摘要: A hybrid automated testing equipment (ATE) system can simultaneously test electrical and optical components of a device under test, such as an optical transceiver. The device under test can be a multilane optical transceiver that transmits different channels of data on different lanes. The hybrid ATE system can include one or more light sources and optical switches in an optical test lane selector to selectively test and calibrate each optical and electrical components of each lane of the device under test.
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