公开(公告)号：US20140129764A1

公开(公告)日：2014-05-08

申请号：US14156476

申请日：2014-01-16

Applicant: Solid State System Co., Ltd.

Inventor： Chih-Hung Wang ,  Chao-Han Wu ,  Ting-Chung Hu

IPC: G06F12/02

CPC classification number: G06F12/0246

Abstract: An allocation structure is used for a flash memory device. The flash memory device includes a first memory module and a second memory module. The first memory module and the second memory module respectively have a plurality of groups, and each of the groups of the first memory module has a plurality of physical blocks of the first memory module and each of the groups of the second memory module has a plurality of physical blocks of the second memory module. The allocation structure includes a first zone. The first zone is used to store a first allocation unit, and is formed by a first group of the groups of the first memory module and a first part of a second group of the groups of the second memory module.

Abstract translation: 分配结构用于闪存设备。 闪存器件包括第一存储器模块和第二存储器模块。 第一存储器模块和第二存储器模块分别具有多个组，并且第一存储器模块的每个组具有第一存储器模块的多个物理块，并且第二存储器模块的每个组具有多个 的第二存储器模块的物理块。 分配结构包括第一区域。 第一区域用于存储第一分配单元，并且由第一组存储器模块的第一组和第二存储器模块的组的第二组的第一部分形成。

公开(公告)号：US08258591B2

公开(公告)日：2012-09-04

申请号：US12014810

申请日：2008-01-16

Applicant: Chien-Hsing Lee ,  Tsung-Min Hsieh

Inventor： Chien-Hsing Lee ,  Tsung-Min Hsieh

IPC: H01L29/84

CPC classification number: B81C1/00246 ,  B81B2201/0235 ,  B81B2201/0242 ,  B81B2201/0257 ,  B81C2201/014 ,  B81C2203/0714 ,  B81C2203/0735

Abstract: The present invention provides a MEMS device, be implemented on many MEMS device, such as MEMS microphone, MEMS speaker, MEMS accelerometer, MEMS gyroscope. The MEMS device includes a substrate. A dielectric structural layer is disposed over the substrate, wherein the dielectric structural layer has an opening to expose the substrate. A diaphragm layer is disposed over the dielectric structural layer, wherein the diaphragm layer covers the opening of the dielectric structural layer to form a chamber. A conductive electrode structure is adapted in the diaphragm layer and the substrate to store nonvolatile charges.

Abstract translation: 本发明提供了一种MEMS器件，可在诸如MEMS麦克风，MEMS扬声器，MEMS加速度计，MEMS陀螺仪的许多MEMS器件上实现。 MEMS器件包括衬底。 电介质结构层设置在衬底上，其中电介质结构层具有露出衬底的开口。 隔膜层设置在电介质结构层上，其中隔膜层覆盖电介质结构层的开口以形成室。 导电电极结构适用于隔膜层和基板以存储非易失性电荷。

公开(公告)号：US08217474B2

公开(公告)日：2012-07-10

申请号：US12647559

申请日：2009-12-28

Applicant: Chien-Hsing Lee ,  Tsung-Min Hsieh ,  Jhyy-Cheng Liou

Inventor： Chien-Hsing Lee ,  Tsung-Min Hsieh ,  Jhyy-Cheng Liou

IPC: H01L27/14

CPC classification number: B81C1/00246 ,  B81B7/0064 ,  B81B2207/015 ,  B81B2207/07 ,  B81B2207/092 ,  B81C2203/0714 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2924/1461 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A hermetic microelectromechanical system (MEMS) package includes a CMOS MEMS chip and a second substrate. The CMOS MEMS Chip has a first substrate, a structural dielectric layer, a CMOS circuit and a MEMS structure. The structural dielectric layer is disposed on a first side of the first structural substrate. The structural dielectric layer has an interconnect structure for electrical interconnection and also has a protection structure layer. The first structural substrate has at least a hole. The hole is under the protection structure layer to form at least a chamber. The chamber is exposed to the environment in the second side of the first structural substrate. The chamber also comprises a MEMS structure. The second substrate is adhered to a second side of the first substrate over the chamber to form a hermetic space and the MEMS structure is within the space.

Abstract translation: 密封微机电系统（MEMS）封装包括CMOS MEMS芯片和第二基板。 CMOS MEMS芯片具有第一衬底，结构介电层，CMOS电路和MEMS结构。 结构介电层设置在第一结构基板的第一侧上。 结构介电层具有用于电互连的互连结构，并且还具有保护结构层。 第一结构基底具有至少一个孔。 该孔位于保护结构层之下，以形成至少一个腔室。 该室暴露于第一结构基板的第二侧的环境。 该腔室还包括MEMS结构。 第二衬底在室上粘附到第一衬底的第二侧以形成密封空间，并且MEMS结构在空间内。

公开(公告)号：US20120173791A1

公开(公告)日：2012-07-05

申请号：US12981499

申请日：2010-12-30

Applicant: Chih-Hung Wang ,  Chao-Han Wu ,  Ting-Chung Hu

Inventor： Chih-Hung Wang ,  Chao-Han Wu ,  Ting-Chung Hu

IPC: G06F12/02

CPC classification number: G06F12/0246

Abstract: A control method and an allocation structure for a flash memory device are provided herein. The flash memory device has a first memory module and a second memory module. Physical blocks of the first memory module and physical blocks of the second memory module are respectively divided into a plurality of groups, each of which has a plurality of the physical blocks. A first subunit and a second subunit of a first allocation unit are interleavingly written into a first group of the groups of the first memory module and a second group of the groups of the second memory chip respectively. Additionally, a first subunit and a second subunit of a second allocation unit are interleavingly written into a third group of the groups of the first memory module and the second group, respectively.

Abstract translation: 本文提供了一种用于闪速存储器件的控制方法和分配结构。 闪存设备具有第一存储器模块和第二存储器模块。 第一存储器模块的物理块和第二存储器模块的物理块分别被分成多个组，每个组具有多个物理块。 第一分配单元的第一子单元和第二子单元分别被交织地写入第一存储器模块的组的第一组和第二存储器芯片的组的第二组。 此外，第二分配单元的第一子单元和第二子单元分别被交织地写入第一存储器模块和第二组的组的第三组中。

公开(公告)号：US08173471B2

公开(公告)日：2012-05-08

申请号：US12111208

申请日：2008-04-29

Applicant: Tsung-Min Hsieh ,  Chien-Hsing Lee

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee

IPC: H01L21/00 ,  H01L29/84

CPC classification number: B81C1/00246 ,  B81B2201/0235 ,  B81B2207/015 ,  B81C2203/0714 ,  B81C2203/0735 ,  G01P15/0802 ,  G01P15/125

Abstract: A method for fabricating MEMS device includes providing a substrate having a first side and a second side. Then, a structural dielectric layer is formed over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer. A multi-stage patterning process is performed on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed. An isotropic etching process is performed from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer.

Abstract translation: 一种用于制造MEMS器件的方法包括提供具有第一侧和第二侧的衬底。 然后，在第一侧的基板上形成结构介电层，其中结构导电层嵌入结构介电层中。 从第二侧在基板上进行多级图案化处理，其中形成具有不同层次的基板的多个区域，并且结构介电层的一部分被暴露。 从衬底的第二侧或从衬底的两侧进行各向同性蚀刻工艺，以蚀刻结构电介质层，其中结构介电层的剩余部分包括结构导电层和由结构介电层包围的电介质部分 导电层。

公开(公告)号：US08030112B2

公开(公告)日：2011-10-04

申请号：US12691754

申请日：2010-01-22

Applicant: Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee ,  Jhyy-Cheng Liou

IPC: H01L21/00

CPC classification number: B81C1/00246 ,  B81B2203/0315 ,  B81B2207/015 ,  B81C2201/016 ,  B81C2203/0714 ,  H04R19/005 ,  H04R19/04 ,  H04R31/00

Abstract: A method for fabricating MEMS device includes: providing a single crystal substrate, having first surface and second surface and having a MEMS region and an IC region; forming SCS mass blocks on the first surface in the MEMS region; forming a structural dielectric layer over the first surface of the substrate, wherein a dielectric member of the structural dielectric layer is filled in spaces surrounding the SCS mass blocks in the MEMS region, the IC region has a circuit structure with an interconnection structure formed in the structural dielectric layer; patterning the single crystal substrate by an etching process on the second surface to expose a portion of the dielectric member filled in the spaces surrounding the SCS mass blocks; performing isotropic etching process at least on the dielectric portion filled in the spaces surrounding the SCS mass blocks. The SCS mass blocks are exposed to release a MEMS structure.

Abstract translation: 一种制造MEMS器件的方法包括：提供具有第一表面和第二表面并具有MEMS区域和IC区域的单晶衬底; 在MEMS区域的第一表面上形成SCS质量块; 在所述基板的所述第一表面上形成结构介电层，其中所述结构介电层的电介质部件填充在所述MEMS区域中围绕所述SCS质量块的空间中，所述IC区域具有形成在所述MEMS区域中的互连结构的电路结构 结构介电层; 通过在第二表面上的蚀刻工艺对单晶衬底进行图案化，以暴露填充在围绕SCS质量块的空间中的电介质构件的一部分; 至少在填充在SCS质量块周围的空间中的电介质部分上进行各向同性蚀刻处理。 暴露SCS质量块以释放MEMS结构。

公开(公告)号：US07962668B2

公开(公告)日：2011-06-14

申请号：US12541168

申请日：2009-08-14

Applicant: Rong-Hwa Ding

Inventor： Rong-Hwa Ding

IPC: G06F13/14

CPC classification number: G06F3/16

Abstract: A USB audio controller includes a USB interface unit, an audio interface unit, a storage interface unit, and a processing unit. The USB interface unit is used to connect to a USB bus for communicating with a host by a communication information. The audio interface unit is used to connect to at least one audio device for communicating with an audio signal. The storage interface unit is used to connect to a memory unit for communicating storage information. The processing unit is for processing the communicating information, storage information, or audio signal.

Abstract translation: USB音频控制器包括USB接口单元，音频接口单元，存储接口单元和处理单元。 USB接口单元用于连接到USB总线，用于通过通信信息与主机进行通信。 音频接口单元用于连接至少一个音频设备以与音频信号进行通信。 存储接口单元用于连接到用于传送存储信息的存储器单元。 处理单元用于处理通信信息，存储信息或音频信号。

公开(公告)号：US20110104844A1

公开(公告)日：2011-05-05

申请号：US12111208

申请日：2008-04-29

Applicant: Tsung-Min Hsieh ,  Chien-Hsing Lee

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee

IPC: H01L21/02

CPC classification number: B81C1/00246 ,  B81B2201/0235 ,  B81B2207/015 ,  B81C2203/0714 ,  B81C2203/0735 ,  G01P15/0802 ,  G01P15/125

Abstract: A method for fabricating MEMS device includes providing a substrate having a first side and a second side. Then, a structural dielectric layer is formed over the substrate at the first side, wherein a structural conductive layer is embedded in the structural dielectric layer. A multi-stage patterning process is performed on the substrate from the second side, wherein a plurality of regions of the substrate with different levels is formed and a portion of the structural dielectric layer is exposed. An isotropic etching process is performed from the second side of the substrate or from the both side of the substrate to etch the structural dielectric layer, wherein a remaining portion of the structural dielectric layer comprises the structural conductive layer and a dielectric portion enclosed by the structural conductive layer.

Abstract translation: 一种用于制造MEMS器件的方法包括提供具有第一侧和第二侧的衬底。 然后，在第一侧的基板上形成结构介电层，其中结构导电层嵌入结构介电层中。 从第二侧在基板上进行多级图案化处理，其中形成具有不同层次的基板的多个区域，并且结构介电层的一部分被暴露。 从衬底的第二侧或从衬底的两侧进行各向同性蚀刻工艺，以蚀刻结构电介质层，其中结构介电层的剩余部分包括结构导电层和由结构介电层包围的电介质部分 导电层。

公开(公告)号：US20110082989A1

公开(公告)日：2011-04-07

申请号：US12571454

申请日：2009-10-01

Applicant: Chih-Hung Wang ,  Chao-Hsiang Huang

Inventor： Chih-Hung Wang ,  Chao-Hsiang Huang

IPC: G06F13/00 ,  G06F12/02

CPC classification number: G06F3/0644 ,  G06F3/0605 ,  G06F3/0679

Abstract: A procedure for reproducing a storage card includes providing a preliminary storage card, wherein the preliminarily storage card has been partitioned into at least a first partitioned region and a second partitioned region and content has been written into the first partitioned region; providing a master storage card without being partitioned; copying the preliminary storage card with at least the first partitioned region and the second partitioned region into the master storage card based on the logic block addressing (LBA) mode, wherein the preliminary storage card is still not partitioned yet; and writing a signature into a DOS file system area of the first partitioned region at a specific signature area, wherein the signature includes a signature ID and a partition information corresponding to at least the first partitioned region and the second partitioned region in the preliminary storage card.

Abstract translation: 一种用于再现存储卡的过程包括：提供一个初步存储卡，其中预先存储卡已经划分成至少第一分区，第二分区，内容已写入第一分区。 提供主存储卡而不分区; 基于逻辑块寻址（LBA）模式，将具有至少第一分区和第二分区的初步存储卡复制到主存储卡中，其中初始存储卡尚未分区; 以及在特定签名区域将签名写入所述第一分区的DOS文件系统区域，其中，所述签名包括与所述初步存储卡中的至少所述第一划分区域和所述第二划分区域对应的签名ID和分区信息 。

公开(公告)号：US20100330722A1

公开(公告)日：2010-12-30

申请号：US12490318

申请日：2009-06-24

Applicant: Tsung-Min Hsieh ,  Chien-Hsing Lee

Inventor： Tsung-Min Hsieh ,  Chien-Hsing Lee

IPC: H01L21/30

CPC classification number: B81C1/00246 ,  B81B2201/0235 ,  B81C2203/0714 ,  G01L9/0042 ,  G01P15/0802 ,  G01P15/125 ,  G01P2015/0828

Abstract: A method for fabricating the MEMS device includes providing a substrate. Then, a structural dielectric layer is formed over the substrate at a first side, wherein a diaphragm is embedded in the structural dielectric layer. The substrate is patterned from a second side to form a cavity in corresponding to the diaphragm and a plurality of venting holes in the substrate. An isotropic etching process is performed from the first side and the second side of the substrate via vent holes to remove a dielectric portion of the structural dielectric layer for exposing a central portion of the diaphragm while an end portion is held by a residue portion of the structural dielectric layer.

Abstract translation: 一种用于制造MEMS器件的方法包括提供衬底。 然后，在第一面上在基板上形成结构介电层，其中隔膜嵌入在结构介电层中。 衬底从第二侧构图，以形成对应于隔膜的空腔和衬底中的多个排气孔。 从衬底的第一侧和第二侧经由通气孔进行各向同性蚀刻处理，以去除结构介质层的电介质部分，用于暴露隔膜的中心部分，同时端部被残留部分保持 结构介电层。