公开(公告)号：US20040214450A1

公开(公告)日：2004-10-28

申请号：US10478063

申请日：2004-06-07

发明人： Toshihiro Suga ,  Yasuji Yamada ,  Toshihiko Maeda ,  Seok Beom Kim ,  Haruhiko Kurosaki ,  Yutaka Yamada ,  Izumi Hirabayashi ,  Yasuhiro Iijima ,  Tomonori Watanabe ,  Hisashi Yoshino ,  Koji Muranaka

IPC分类号： H01L021/31 ,  H01L021/469

CPC分类号： C30B19/02 ,  C30B29/22 ,  C30B29/225

摘要： There is provided a process for preparing a composite material of an oxide crystal film and a substrate by forming a Y123 type oxide crystal film from a solution phase on a substrate using a liquid phase method, wherein problems such as cracking of the oxide crystal film, separation of the oxide crystal film from the substrate, and development of a reaction layer between the substrate and the solution can be minimized. The solvent for forming the solution phase uses either a BaOnullCuOnullBaF2 system or a BaOnullCuOnullAgnullBaF2 system, and when the substrate with a seed crystal film bonded to the surface is brought in contact with the solution to form (grow) the oxide crystal film on the substrate, the temperature of the solution is controlled to a temperature of no more than 850null C.

摘要翻译： 提供了通过使用液相法在基板上从溶液相形成Y123型氧化物晶体膜来制备氧化物晶体膜和基板的复合材料的方法，其中诸如氧化物晶体膜的破裂， 氧化物晶体膜与基板的分离以及基板和溶液之间的反应层的显影可以最小化。 用于形成溶液相的溶剂使用BaO-CuO-BaF 2系统或BaO-CuO-Ag-BaF 2系统，并且当将具有与表面结合的晶种膜的基板与溶液接触以形成 生长）基底上的氧化物晶体膜，将溶液的温度控制在不高于850℃的温度。

公开(公告)号：US20040121191A1

公开(公告)日：2004-06-24

申请号：US10324883

申请日：2002-12-19

发明人： Mariappan P. Paranthaman ,  Tolga Aytug ,  David K. Christen ,  Roeland Feenstra ,  Amit Goyal

IPC分类号： B32B009/00

CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B29/225 ,  C30B29/24

摘要： Materials for depositing buffer layers on biaxially textured and untextured metallic and metal oxide substrates for use in the manufacture of superconducting and other electronic articles comprise RMnO3, R1nullxAxMnO3, and combinations thereof; wherein R includes an element selected from the group consisting of La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Th, Dy, Ho, Er, Tm, Yb, Lu, and Y, and A includes an element selected from the group consisting of Be, Mg, Ca, Sr, Ba, and Ra.

摘要翻译： 用于在用于制造超导和其它电子制品的双轴织构和非纹理的金属和金属氧化物基底上沉积缓冲层的材料包括RMnO3，R1-xAxMnO3及其组合; 其中R包括选自La，Ce，Pr，Nd，Pm，Sm，Eu，Gd，Th，Dy，Ho，Er，Tm，Yb，Lu和Y中的元素，A包括选自 由Be，Mg，Ca，Sr，Ba和Ra组成的组。

公开(公告)号：US06743533B1

公开(公告)日：2004-06-01

申请号：US09959029

申请日：2001-12-11

申请人： Kazuomi Kakimoto ,  Natsuro Hobara ,  Teruo Izumi ,  Yuh Shiohara ,  Yuichi Nakamura ,  Kazuya Ohmatsu ,  Koso Fujino

发明人： Kazuomi Kakimoto ,  Natsuro Hobara ,  Teruo Izumi ,  Yuh Shiohara ,  Yuichi Nakamura ,  Kazuya Ohmatsu ,  Koso Fujino

IPC分类号： H01B1200

CPC分类号： C30B19/00 ,  C30B19/02 ,  C30B19/04 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2425 ,  H01L39/2454

摘要： An oxide superconductor of the present invention characterized in that it comprises: a substrate 1 made of metals having a high melting temperature; at least one oxide intermediate layer 2 and 3 which is formed on at least one surface of the substrate 1; and a thick film oxide superconductor layer 5 which is formed on the oxide intermediate layer 2 and 3 the liquid phase epitaxial method in which the substrate 1 provided with the oxide intermediate layer 2 and 3 is put into a solution 7 containing the elements comprising an oxide superconductor layer, and is then pulled out from the solution 7.

摘要翻译： 本发明的氧化物超导体的特征在于，它包括：由具有高熔点的金属制成的基片1; 形成在基板1的至少一个表面上的至少一个氧化物中间层2和3; 以及形成在氧化物中间层2和3上的厚膜氧化物超导体层5，其中将具有氧化物中间层2和3的基板1放入含有包含氧化物的元素的溶液7中的液相外延法 超导体层，然后从溶液7中拉出。

公开(公告)号：US20040096587A1

公开(公告)日：2004-05-20

申请号：US10704840

申请日：2003-11-10

发明人： Sankar Sambasivan ,  Scott A. Barnett ,  Ilwon Kim ,  John Rechner

IPC分类号： B05D003/04

CPC分类号： H01L39/2461 ,  C23C8/02 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  C30B29/38 ,  C30B33/005

摘要： The present invention relates to oxides on suitable substrates, as converted from nitride precursors.

公开(公告)号：US06690957B2

公开(公告)日：2004-02-10

申请号：US10101173

申请日：2002-03-20

申请人： Akihiko Akasegawa ,  Kazunori Yamanaka ,  Teru Nakanishi

发明人： Akihiko Akasegawa ,  Kazunori Yamanaka ,  Teru Nakanishi

IPC分类号： H01B1200

CPC分类号： H01L39/2448 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  H01L39/2422

摘要： A high temperature superconductor film which is Y—Ba—Cu—O-based and formed on a dielectric substrate 10, and has a Cu composition ratio to the Ba near the upper surface of the film which is higher than a Cu composition ratio to the Ba inside the film. The YBCO-based high temperature superconductor film is formed with a Cu composition on the film surface maintained higher with respect to the stoichiometric composition, whereby the Cu oxide can be easily produced while the production of the yttrium oxides can be depressed. The yttrium oxides cannot be easily produced, which makes it difficult for pores and crystal strains to be generated while the Cu oxide functions as a flux for advancing the crystal growth, whereby the YBCO-based high temperature superconductor film can have good film quality and single crystal. The superconducting elements can be formed of the YBCO-based high temperature superconducting film of such good film quality.

摘要翻译： 一种Y-Ba-Cu-O系的高温超导体膜，形成在电介质基板10上，并且与膜的上表面附近的Ba的Cu组成比高于Cu组成比 电影里面有Ba。 基于YBCO的高温超导体膜在相对于化学计量组成保持较高的膜表面上形成Cu组成，由此可以容易地制备Cu氧化物，同时可以抑制氧化钇的生成。 氧化钇不容易产生，这使得难以产生孔和晶体应变，而Cu氧化物用作用于促进晶体生长的助熔剂，由此YBCO基高温超导体膜可以具有良好的膜质量和单一的 水晶。 超导元件可以由具有良好膜质量的YBCO基高温超导膜形成。

公开(公告)号：US20040018394A1

公开(公告)日：2004-01-29

申请号：US10242895

申请日：2002-09-11

发明人： Quanxi Jia ,  Stephen R. Foltyn ,  Paul N. Arendt ,  James R. Groves

IPC分类号： B05D005/12 ,  B32B001/00 ,  H01F006/00 ,  H01B012/00 ,  H01L039/00 ,  B32B009/00 ,  B32B019/00

CPC分类号： H01L39/2461 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S428/93

摘要： An article including a substrate, at least one intermediate layer upon the surface of the substrate, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the at least one intermediate layer, and a layer of a SrRuO3 buffer material upon the oriented cubic oxide material layer is provided together with additional layers such as a HTS top-layer of YBCO directly upon the layer of a SrRuO3 buffer material layer. With a HTS top-layer of YBCO upon at least one layer of the SrRuO3 buffer material in such an article, Jc's of up to 1.3null106 A/cm2 have been demonstrated with projected Ic's of over 200 Amperes across a sample 1 cm wide.

摘要翻译： 一种制品，其包括基材，在所述基材表面上的至少一个中间层，在所述至少一个中间层上具有岩盐状结构的定向立方氧化物材料层，以及SrRuO 3缓冲材料层 在定向立方氧化物材料层与附加层（例如YBCO的HTS顶层）一起直接设置在SrRuO 3缓冲材料层的层上。 在这种制品中的至少一层SrRuO 3缓冲材料上的HTS顶层YBCO上，已经证明了高达1.3×10 6 A / cm 2的Jc值超过200安培的预计Ic 样品1厘米宽。

公开(公告)号：US06627582B2

公开(公告)日：2003-09-30

申请号：US09801448

申请日：2001-03-08

申请人： Mitsuru Sawamura ,  Mitsuru Morita

发明人： Mitsuru Sawamura ,  Mitsuru Morita

IPC分类号： H01B1200

CPC分类号： C30B29/225 ,  C04B35/4508 ,  C30B9/00 ,  C30B11/00 ,  H01L39/2419

摘要： A large superconductor intermediate of REBa2Cu3Ox system (where RE is one kind or a combination of rare earth elements including Y), characterized by a structure that oxide superconductors having non-superconductive phases finely dispersed in REBa2Cu3Ox phases (123 phases) of different peritectic temperatures (Tp) are laminated three-dimensionally in the order of Tp's, seed crystals mounted on the oxide superconductor layer having a highest Tp, and excluded phases included in at least the oxide superconductor having the high Tp.

摘要翻译： REBa2Cu3Ox系统的大超导体中间体（其中RE是一种或包括Y的稀土元素的组合），其特征在于具有非超导相的氧化物超导体细分散在不同包晶温度的REBa2Cu3Ox相（123相）中的结构 Tp）以Tp的顺序三维层叠，安装在具有最高Tp的氧化物超导体层上的晶种，以及至少包含在具有高Tp的氧化物超导体中的排除相。

公开(公告)号：US06617283B2

公开(公告)日：2003-09-09

申请号：US09888115

申请日：2001-06-22

申请人： M. Parans Paranthaman ,  Tolga Aytug ,  David K. Christen

发明人： M. Parans Paranthaman ,  Tolga Aytug ,  David K. Christen

IPC分类号： H01B1200

CPC分类号： H01L39/2461 ,  C23C14/024 ,  C23C14/087 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10S428/93

摘要： An article with an improved buffer layer architecture includes a substrate having a textured metal surface, and an electrically conductive lanthanum metal oxide epitaxial buffer layer on the surface of the substrate. The article can also include an epitaxial superconducting layer deposited on the epitaxial buffer layer. An epitaxial capping layer can be placed between the epitaxial buffer layer and the superconducting layer. A method for preparing an epitaxial article includes providing a substrate with a metal surface and depositing on the metal surface a lanthanum metal oxide epitaxial buffer layer. The method can further include depositing a superconducting layer on the epitaxial buffer layer, and depositing an epitaxial capping layer between the epitaxial buffer layer and the superconducting layer.

公开(公告)号：US20030036483A1

公开(公告)日：2003-02-20

申请号：US09731534

申请日：2000-12-06

发明人： Paul N. Arendt ,  Stephen R. Foltyn ,  James R. Groves ,  Terry G. Holesinger ,  Quanxi Jia

IPC分类号： H01B001/00 ,  H01F001/00 ,  C04B002/00 ,  B32B001/00

CPC分类号： H01L39/2461 ,  C23C14/081 ,  C30B23/02 ,  C30B29/22 ,  C30B29/225 ,  Y10T428/265

摘要： An article including a substrate, a layer of an inert oxide material upon the surface of the substrate, (generally the inert oxide material layer has a smooth surface, i.e., a RMS roughness of less than about 2 nm), a layer of an amorphous oxide or oxynitride material upon the inert oxide material layer, a layer of an oriented cubic oxide material having a rock-salt-like structure upon the amorphous oxide material layer is provided together with additional layers such as at least one layer of a buffer material upon the oriented cubic oxide material layer or a HTS top-layer of YBCO directly upon the oriented cubic oxide material layer. With a HTS top-layer of YBCO upon at least one layer of a buffer material in such an article, Jc's of 1.4null106 A/cm2 have been demonstrated with projected Ic's of 210 Amperes across a sample 1 cm wide.

摘要翻译： 包括衬底，在衬底表面上的惰性氧化物材料层（通常惰性氧化物材料层具有光滑表面，即小于约2nm的RMS粗糙度）的物品，非晶态层 氧化物或氧氮化物材料在惰性氧化物材料层上，在非晶形氧化物材料层上具有岩盐状结构的定向立方氧化物材料层与另外的层一起提供，例如至少一层缓冲材料层 定向的立方氧化物材料层或YBCO的HTS顶层直接在取向的立方氧化物材料层上。 在这种制品中至少一层缓冲材料上具有HTS顶层的YBCO，已经证明了Jc为1.4×10 6 A / cm 2，并且在1cm宽的样品上已经证明了具有210安培的投影Ic。

公开(公告)号：US06486100B1

公开(公告)日：2002-11-26

申请号：US09736035

申请日：2000-12-13

申请人： Dominic F. Lee ,  Donald M. Kroeger ,  Amit Goyal

发明人： Dominic F. Lee ,  Donald M. Kroeger ,  Amit Goyal

IPC分类号： C30B2518

CPC分类号： C30B29/225 ,  C30B11/00 ,  H01L39/2419 ,  H01L39/2461 ,  Y10S505/70

摘要： A multi-domained bulk REBa2CU3Ox with low-angle domain boundaries which resemble a quasi-single domained material and a method for producing the same comprising arranging multiple seeds, which can be small single crystals, single domained melt-textured REBa2CU3Ox pieces, textured substrates comprises of grains with low misorientation angles, or thick film REBa2CU3Ox deposited on such textured substrate, such seeds being tailored for various REBa2CU3Ox compounds, in specific pattern and relative seed orientations on a superconductor precursor material which may be placed in contact with a porous substrate so as to reduce the amount of liquid phase in the melt. Because seeds can be arranged in virtually any pattern, high quality REBa2CU3Ox elements of virtually unlimited size and complex geometry can be fabricated.

摘要翻译： 具有类似于准单一有主导材料的低角度域边界的多主体大块REBa2CU3Ox及其制造方法包括：布置多个晶种，其可以是小单晶，单一熔化织构化的REBa2CU3Ox片，纹理化衬底包括 具有低取向角的晶粒或沉积在这种织构化的衬底上的厚膜REBa2CU3Ox，这些种子针对各种REBa2CU3Ox化合物，以特定图案和相对种子取向在超导体前体材料上，其可以与多孔基底接触，以便 以减少熔体中液相的量。 由于种子可以以任何形式布置，因此可以制造几乎无限尺寸和复杂几何尺寸的高品质REBa2CU3Ox元件。