Double layer interleaved p-n diode modulator
    11.
    发明授权
    Double layer interleaved p-n diode modulator 有权
    双层交错p-n二极管调制器

    公开(公告)号:US08889447B2

    公开(公告)日:2014-11-18

    申请号:US13529360

    申请日:2012-06-21

    Abstract: A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion.

    Abstract translation: 一种光学调制器的制造方法包括在n型层的一部分上形成n型层,第一氧化物部分和n型层的第二部分上的第二氧化物部分,将第一掩模层图案化 第一氧化物部分,n型层的平面表面的部分和第二氧化物部分的部分,在n型层中注入p型掺杂剂以形成第一p型区和第二p型 去除所述第一掩蔽层,在所述第一氧化物部分上形成第二掩模层,所述第一p型区域的一部分和所述n型层的一部分,以及在所述第一掩模层的暴露部分中注入p型掺杂剂 n型层,第一p型区域的露出部分以及设置在基板和第二氧化物部分之间的n型层和第二p型区域的区域。

    Double Layer Interleaved P-N Diode Modulator
    12.
    发明申请
    Double Layer Interleaved P-N Diode Modulator 有权
    双层交错P-N二极管调制器

    公开(公告)号:US20130344634A1

    公开(公告)日:2013-12-26

    申请号:US13529360

    申请日:2012-06-21

    Abstract: A method for fabricating an optical modulator includes forming n-type layer, a first oxide portion on a portion of the n-type layer, and a second oxide portion on a second portion of the n-type layer, patterning a first masking layer over the first oxide portion, portions of a planar surface of the n-type layer, and portions of the second oxide portion, implanting p-type dopants in the n-type layer to form a first p-type region and a second p-type region, removing the first masking layer, patterning a second masking layer over the first oxide portion, a portion of the first p-type region, and a portion of the n-type layer, and implanting p-type dopants in exposed portions of the n-type layer, exposed portions of the first p-type region, and regions of the n-type layer and the second p-type region disposed between the substrate and the second oxide portion.

    Abstract translation: 一种光学调制器的制造方法包括在n型层的一部分上形成n型层,第一氧化物部分和n型层的第二部分上的第二氧化物部分,将第一掩模层图案化 第一氧化物部分,n型层的平面表面的部分和第二氧化物部分的部分,在n型层中注入p型掺杂剂以形成第一p型区和第二p型 去除所述第一掩蔽层,在所述第一氧化物部分上形成第二掩模层,所述第一p型区域的一部分和所述n型层的一部分,以及在所述第一掩模层的暴露部分中注入p型掺杂剂 n型层,第一p型区域的露出部分以及设置在基板和第二氧化物部分之间的n型层和第二p型区域的区域。

    Attenuating counter-propagating optical phase modulation
    14.
    发明授权
    Attenuating counter-propagating optical phase modulation 失效
    衰减反向传播光相位调制

    公开(公告)号:US07305152B1

    公开(公告)日:2007-12-04

    申请号:US11445820

    申请日:2006-06-02

    Abstract: An attenuating counter-propagating (ACP) optical phase modulator introduces zero propagation delay. An optical field is modulated by an electromagnetic field. Within the ACP modulator, the optical field is propagated in an opposite direction to the propagation direction of the electromagnetic field. The electromagnetic field is attenuated within the ACP modulator. In an example embodiment, the length of the modulator is greater than the attenuation length of the electromagnetic field.

    Abstract translation: 衰减反向传播(ACP)光相位调制器引入零传播延迟。 光场被电磁场调制。 在ACP调制器内,光场沿与电磁场的传播方向相反的方向传播。 电磁场在ACP调制器内衰减。 在示例实施例中,调制器的长度大于电磁场的衰减长度。

    Distributed aperture head-up display
    15.
    发明申请
    Distributed aperture head-up display 有权
    分布式孔径平视显示

    公开(公告)号:US20060139503A1

    公开(公告)日:2006-06-29

    申请号:US11303290

    申请日:2005-12-16

    Abstract: Method and apparatus are provided for displaying an image to a viewer with reduced visual artifacts. The apparatus comprises a display panel for forming the image using an array of pixels with distributed active regions, and a viewing arrangement optically situated between the display panel and the viewer for transferring the image formed on the display panel to the viewer with limited angular pixel subtense. The distributed active regions of the pixels are desirably divided into at least two simultaneously switched portions at least partly separated by or surrounding a significant portion of the non-switchable region. First order spatial harmonics and associated artifacts are reduced by the distributed apertures and second order and higher harmonics are reduced by limiting the pixel subtense angle seen by the viewer. A significant reduction in visual artifacts arising from the periodic structure of the display panel is obtained.

    Abstract translation: 提供了一种方法和装置,用于以减少的视觉瑕疵向观看者显示图像。 该装置包括用于使用具有分布式有源区域的像素阵列形成图像的显示面板,以及光学地位于显示面板和观看者之间的观看布置器,用于将形成在显示面板上的图像以有限的角度像素底部传送到观看者 。 像素的分布式有源区域希望被分成至少两个同时切换的部分,至少部分地与不可切换区域的显着部分分开或围绕。 第一阶空间谐波和相关的伪影通过分布式孔径和二阶降低,并且通过限制观察者所看到的像素底角来减小高次谐波。 获得由显示面板的周期性结构引起的视觉伪影的显着减少。

    Electrooptical devices, electrooptical thin crystal films and methods making same
    16.
    发明申请
    Electrooptical devices, electrooptical thin crystal films and methods making same 有权
    电光装置,电光薄膜及其制造方法

    公开(公告)号:US20030161022A1

    公开(公告)日:2003-08-28

    申请号:US10295376

    申请日:2002-11-15

    Applicant: OPTIVA, INC.

    Abstract: An electrooptical device is provided comprising at least one substrate, at least one pair of electrodes and at least one layer of an electrooptical material. The electrooptical material represents an optically anisotropic thin crystal film and contains molecules having aromatic rings and possessing a lattice with an interplanar spacing (Bragg's reflection) of 3.4null0.2 {acute over (null)} along one of optical axes. The electrooptical material has anisotropic refractive indices and/or anisotropic absorption coefficients that are depended on an electric field strength.

    Abstract translation: 提供了一种电光装置,其包括至少一个衬底,至少一对电极和至少一层电光材料层。 电光材料表示光学各向异性薄膜,并且含有具有芳香环并具有3.4±0.2的平面间隔(布拉格反射)的晶格的分子(沿着光轴沿着一个光电光学材料具有各向异性折射率 和/或取决于电场强度的各向异性吸收系数。

    LIQUID CRYSTAL GRATING AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE
    17.
    发明申请
    LIQUID CRYSTAL GRATING AND FABRICATION METHOD THEREOF, AND DISPLAY DEVICE 审中-公开
    液晶晶体及其制造方法及显示装置

    公开(公告)号:US20160342039A1

    公开(公告)日:2016-11-24

    申请号:US14908298

    申请日:2015-07-16

    Inventor: Yuqiong Chen

    Abstract: A liquid crystal grating and a fabrication method thereof, and a display device are provided. The liquid crystal grating comprises a first substrate (1) and a second substrate (2) provided opposite to each other, and a liquid crystal layer (7); a plate-shaped transparent substrate (3) is provided on the first substrate (1), and a second transparent conductive layer (4), a transparent insulating layer (5) and a first transparent conductive layer (6) are sequentially provided on the second substrate (2); the first transparent conductive layer (6) includes first strip-shaped transparent electrodes (61) and second strip-shaped transparent electrodes (62) which are alternately provided, and there is a gap between the first strip-shaped transparent electrode (61) and the second strip-shaped transparent electrode (62) adjacent to each other; and the second transparent conductive layer (4) includes third strip-shaped transparent electrodes (41) provided at intervals.

    Abstract translation: 提供一种液晶光栅及其制造方法以及显示装置。 液晶光栅包括彼此相对设置的第一基板(1)和第二基板(2)和液晶层(7); 在第一基板(1)上设置有板状透明基板(3),并且在第一基板(1)上依次设置第二透明导电层(4),透明绝缘层(5)和第一透明导电层 第二基板(2); 第一透明导电层(6)包括交替设置的第一带状透明电极(61)和第二带状透明电极(62),并且在第一带状透明电极(61)和 所述第二带状透明电极彼此相邻; 并且第二透明导电层(4)包括间隔设置的第三带状透明电极(41)。

    Array substrate of TFT-LCD and manufacturing method thereof
    18.
    发明授权
    Array substrate of TFT-LCD and manufacturing method thereof 有权
    TFT-LCD阵列基板及其制造方法

    公开(公告)号:US08704231B2

    公开(公告)日:2014-04-22

    申请号:US13337665

    申请日:2011-12-27

    Applicant: Rongge Sun Xin Ye

    Inventor: Rongge Sun Xin Ye

    Abstract: An array substrate of a TFT-LCD, comprising: a base substrate; gate lines and data lines formed on the substrate, the gate lines and the data lines crossing with each other to define a plurality of pixel units each of which comprises a thin film transistor, a first electrode layer and a second electrode layer, wherein the first electrode layer is separated from the second electrode layer through an insulation layer; the first electrode layer comprises a plurality of first electrodes separated by openings; the second electrode layer comprises a plurality of second electrodes separated by openings; the second electrodes comprise overlapping electrodes each of which completely overlaps with the first electrodes and non-overlapping electrodes whose edges are completely located within an region corresponding to the openings in the first electrode layer.

    Abstract translation: TFT-LCD的阵列基板,包括:基底; 形成在基板上的栅极线和数据线,栅极线和数据线彼此交叉以限定多个像素单元,每个像素单元包括薄膜晶体管,第一电极层和第二电极层,其中第一 电极层通过绝缘层与第二电极层分离; 第一电极层包括由开口分开的多个第一电极; 第二电极层包括由开口分开的多个第二电极; 第二电极包括重叠电极,每个重叠电极与第一电极和非重叠电极完全重叠,其边缘完全位于与第一电极层中的开口对应的区域内。

    Double layer interleaved p-n diode modulator
    19.
    发明授权
    Double layer interleaved p-n diode modulator 有权
    双层交错p-n二极管调制器

    公开(公告)号:US08526090B1

    公开(公告)日:2013-09-03

    申请号:US13535888

    申请日:2012-06-28

    Abstract: An optical modulator device includes a body portion operative to propagate an optical mode along a longitudinal axis of the body portion, the body portion comprising a first layer disposed on a second layer, wherein the first layer includes a first p-type doped region adjacent to a first n-type doped region along the longitudinal axis of the body portion, and the second layer includes a second n-type doped region disposed on the first p-type doped region and a second p-type doped region adjacent to the second n-type doped region along the longitudinal axis of the body portion, the second p-type doped region disposed on the first n-type doped region.

    Abstract translation: 一种光调制器装置包括主体部分,其可操作以沿着主体部分的纵向轴线传播光学模式,主体部分包括设置在第二层上的第一层,其中第一层包括邻近第一层的第一p型掺杂区域 沿着主体部分的纵向轴线的第一n型掺杂区域,并且第二层包括设置在第一p型掺杂区域上的第二n型掺杂区域和与第二n型掺杂区域相邻的第二p型掺杂区域 型掺杂区域,所述第二p型掺杂区域设置在所述第一n型掺杂区域上。

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