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    Field-emission electron source
    11.
    发明授权
    Field-emission electron source 失效
    场发射电子源

    公开(公告)号：US06818915B1

    公开(公告)日：2004-11-16

    申请号：US09622734

    申请日：2000-11-27

    Applicant: Keisuke Koga

    Inventor： Keisuke Koga

    IPC: H01L2912

    CPC classification number: H01L27/0705 ,  H01J1/3042 ,  H01J2201/319 ,  H01J2329/00

    Abstract: The field emission type electron source device of the present invention includes: a field emission electron source portion including an extraction electrode provided on a p-type silicon substrate via an insulating film and having an opening portion at a position corresponding to a region where a cathode is provided; and a cathode portion provided on the p-type silicon substrate and at a position corresponding to the opening portion of the extraction portion; and an n-channel field effect transistor portion provided on the p-type silicon substrate, corresponding to the field emission electron source portion. The field emission electron source portion is provided in a drain region of the field effect transistor portion. A control voltage is applied to a gate electrode of the field effect transistor portion to control a field emission current from the field emission electron source portion. The drain region includes at least two wells having different impurity concentrations. Of the at least two wells, one well having a low impurity concentration is provided at an end of the drain region which contacts a channel region of the field effect transistor portion.

    Abstract translation: 本发明的场致发射型电子源器件包括：场致发射电子源部，其包括通过绝缘膜设置在p型硅衬底上的引出电极，并且在对应于阴极的区域的位置处具有开口部分 被提供; 以及阴极部，设置在所述p型硅衬底上并且位于与所述提取部的开口部对应的位置; 以及设置在p型硅衬底上的对应于场发射电子源部分的n沟道场效应晶体管部分。 场致发射电子源部分设置在场效应晶体管部分的漏极区域中。 对场效应晶体管部分的栅电极施加控制电压，以控制来自场发射电子源部分的场致发射电流。 漏极区域包括至少两个具有不同杂质浓度的阱。 在至少两个阱中，在漏极区域的与场效应晶体管部分的沟道区域接触的端部处提供具有低杂质浓度的一个阱。

    Methods of forming field emitter display (FED) assemblies
    12.
    发明授权
    Methods of forming field emitter display (FED) assemblies 失效
    形成场发射体显示（FED）组件的方法

    公开(公告)号：US06790114B2

    公开(公告)日：2004-09-14

    申请号：US10109847

    申请日：2002-04-01

    Applicant: Ammar Derraa

    Inventor： Ammar Derraa

    IPC: H01J924

    CPC classification number: H01J9/185 ,  H01J31/127 ,  H01J2201/319

    Abstract: Field emitter display (FED) assemblies and methods of forming field emitter display (FED) assemblies are described. In one embodiment, a substrate is provided having a column line formed and supported thereby. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. At least some of the regions define different pixels of the display. A continuous resistor is interposed between the column line and at least two different pixels. In another embodiment, a column line is formed and supported by a substrate. A plurality of field emitter tip regions are formed and disposed in operable proximity to the column line. The regions define different pixels of the display. A single current-limiting resistor is operably coupled with the column line and at least two different pixels. In yet another embodiment, a series of column lines are formed over a substrate. A series of field emitter tip regions are formed and arranged into discrete pixels which are disposed in operable proximity to individual respective column lines. A series of resistor strips is formed and supported by the substrate. The resistor strips individually underlie respective individual series of field emitter tip regions. The individual resistor strips operably connect respective column lines and field emitter tip regions. At least one of the resistor strips operably connects its associated column line and at least two different discrete pixels. Other embodiments are described.

    Abstract translation: 描述了场发射器显示（FED）组件和形成场发射器显示（FED）组件的方法。 在一个实施例中，提供具有形成并由其支撑的列线的基板。 多个场发射极尖端区域形成并布置成可操作地接近列线。 至少一些区域定义显示器的不同像素。 在列线和至少两个不同的像素之间插入连续电阻。 在另一个实施例中，柱线由衬底形成并支撑。 多个场发射极尖端区域形成并布置成可操作地接近列线。 这些区域定义显示器的不同像素。 单个限流电阻器与列线和至少两个不同的像素可操作地耦合。 在另一个实施例中，在衬底上形成一系列列线。 一系列场发射器尖端区域形成并布置成离散的像素，这些离散像素设置成可操作地接近各个相应的列线。 一系列电阻条由衬底形成并支撑。 电阻带分别位于各个系列的场发射器尖端区域的下面。 各个电阻条可操作地连接相应的列线和场发射极尖端区域。 电阻条中的至少一个可操作地连接其相关联的列线和至少两个不同的离散像素。 描述其他实施例。

    Field emission display device
    14.
    发明申请
    Field emission display device 有权

    公开(公告)号：US20040007962A1

    公开(公告)日：2004-01-15

    申请号：US10194145

    申请日：2002-07-11

    Inventor： Ga-Lane Chen

    IPC: H01J001/304 ,  H01J019/24

    CPC classification number: H01J1/3044 ,  H01J31/127 ,  H01J2201/319

    Abstract: A field emission display device (1) includes a cathode plate (20), a resistive buffer (30) in contact with the cathode plate, a plurality of electron emitters (40) formed on the buffer and an anode plate (50) spaced from the buffer. Each electron emitter includes a rod-shaped first part (401) and a conical second part (402). The buffer and first parts are made from silicon oxide (SiOx). The combined buffer and first parts has a gradient distribution of electrical resistivity such that highest electrical resistivity is nearest the cathode plate and lowest electrical resistivity is nearest the anode plate. The second parts are made from molybdenum. When emitting voltage is applied between the cathode and anode plates, electrons emitted from the second parts traverse an interspace region and are received by the anode plate. Because of the gradient distribution of electrical resistivity, only a very low emitting voltage is needed.

    Field emitter cell and array with vertical thin-film-edge emitter
    17.
    发明授权
    Field emitter cell and array with vertical thin-film-edge emitter 失效

    公开(公告)号：US06595820B2

    公开(公告)日：2003-07-22

    申请号：US09883458

    申请日：2001-06-13

    Applicant: David S. Y. Hsu ,  Henry F. Gray

    Inventor： David S. Y. Hsu ,  Henry F. Gray

    IPC: H01J902

    CPC classification number: H01J1/3046 ,  B82Y10/00 ,  B82Y30/00 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30469 ,  H01J2201/319

    Abstract: A field emitter cell includes a thin film edge emitter normal to a gate layer. The field emitter is a multilayer structure including a low work function material sandwiched between two protective layers. The field emitter may be fabricated from a composite starting structure including a conductive substrate layer, an insulation layer, a standoff layer and a gate layer, with a perforation extending from the gate layer into the substrate layer. The emitter material is conformally deposited by chemical beam deposition along the sidewalls of the perforation. Alternatively, the starting material may be a conductive substrate having a protrusion thereon. The emitter layer, standoff layer, insulation layer, and gate layer are sequentially deposited, and the unwanted portions of each are preferentially removed to provide the desired structure.

    Image display and a manufacturing method of the same
    18.
    发明授权
    Image display and a manufacturing method of the same 有权
    图像显示及其制造方法

    公开(公告)号：US06538391B1

    公开(公告)日：2003-03-25

    申请号：US10030982

    申请日：2002-01-16

    Applicant: Mutsumi Suzuki ,  Masakazu Sagawa ,  Toshiaki Kusunoki

    Inventor： Mutsumi Suzuki ,  Masakazu Sagawa ,  Toshiaki Kusunoki

    IPC: G09G310

    CPC classification number: B82Y10/00 ,  H01J1/312 ,  H01J31/127 ,  H01J2201/319 ,  H01J2329/00

    Abstract: The present invention provides an image display capable of enhancing a production yield. The image display comprises a display device including a first plate which has a plurality of electron-emitter elements each having a structure comprised of a base electrode, an insulating layer and a top electrode stacked on one another in this order, the electron-emitter element emitting electrons from the surface of the top electrode when a voltage of positive polarity is applied to the top electrode; a plurality of first electrodes for respectively applying driving voltages to the base electrodes of the electron-emitter elements lying in a row (or column) direction; and a plurality of second electrodes for respectively applying driving voltages to the top electrodes of the electron-emitter elements lying in the column (or row) direction, a frame component, and a second plate having phosphors, wherein a space surrounded by the first plate, the frame component and the second plate is brought into vacuum. In the display apparatus, the at least one electron-emitter element includes the base electrode and the top electrode, at least one of which is connected to the first electrode or the second electrode through a resistor element.

    Abstract translation: 本发明提供能够提高产量的图像显示装置。 图像显示器包括显示装置，该显示装置包括具有多个电子发射元件的第一板，每个电子发射元件具有依次层叠的基极，绝缘层和顶电极的结构，电子发射元件 当向顶部电极施加正极性的电压时，从顶部电极的表面发射电子; 多个第一电极，用于分别向位于行（或列）方向的电子发射体元件的基极施加驱动电压; 以及多个第二电极，用于分别向位于列（或行）方向的电子发射体元件的顶电极，框架部件和具有荧光体的第二板分别施加驱动电压，其中由第一板 ，使框架部件和第二板件成为真空。 在显示装置中，至少一个电子发射体元件包括基极和顶电极，其中至少一个通过电阻元件连接到第一电极或第二电极。

    Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods
    20.
    发明申请
    Field effect transistor fabrication methods, field emission device fabrication methods, and field emission device operational methods 有权
    场效应晶体管制造方法，场发射器件制造方法和场致发射器件的操作方法

    公开(公告)号：US20020098630A1

    公开(公告)日：2002-07-25

    申请号：US10072415

    申请日：2002-02-05

    Inventor： Ji Ung Lee ,  John Lee ,  Benham Moradi

    IPC: H01L021/00 ,  H01L021/84 ,  H01L021/338 ,  H01J001/02 ,  H01J001/05 ,  H01J001/38

    CPC classification number: H01L29/78618 ,  H01J9/025 ,  H01J2201/319

    Abstract: The present invention includes field effect transistors, field emission apparatuses, thin film transistors, and methods of forming field effect transistors. According to one embodiment, a field effect transistor includes a semiconductive layer configured to form a channel region; a pair of spaced conductively doped semiconductive regions in electrical connection with the channel region of the semiconductive layer; a gate intermediate the semiconductive regions; and a gate dielectric layer intermediate the semiconductive layer and the gate, the gate dielectric layer being configured to align the gate with the channel region of the semiconductive layer. In one aspect, chemical-mechanical polishing self-aligns the gate with the channel region. According to another aspect, a field emission device includes a transistor configured to control the emission of electrons from an emitter.

    Abstract translation: 本发明包括场效应晶体管，场发射装置，薄膜​​晶体管和形成场效应晶体管的方法。 根据一个实施例，场效应晶体管包括被配置为形成沟道区的半导体层; 一对间隔导电掺杂的半导体区域，与半导体层的沟道区域电连接; 半导体区域中间的栅极; 以及在所述半导体层和所述栅极之间的栅极电介质层，所述栅极电介质层被配置为使所述栅极与所述半导体层的沟道区域对准。 在一个方面，化学机械抛光使栅极与沟道区域自对准。 根据另一方面，场发射器件包括被配置为控制来自发射极的电子的发射的晶体管。

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