摘要:
The semiconductor image sensing device is comprised of a single crystal substrate of one conductivity type, formed thereon with an array of photodetector 5 for effecting photo-electric conversion, a read-out circuit for sequentially reading out an output signal from each photodetector, an amplifier for voltage-converting the read output signal, and a voltage regulator for providing a constant voltage. The read-out circuit and the photodetectors are driven by a lower voltage supplied from the integrated voltage regulator so as to reduce a switching noise generated in the read-out circuit. S/N ratio of the semiconductor image sensor is improved by reducing the switching noise. Further, the power consumption can be saved by driving the read-out circuit at the lower voltage.
摘要:
There is provided a charge transfer device comprising a shift register comprised of a plurality of shift stages directly connected to each other, phase pulses for a multi-phase control pulse being delivered to the shift stages, respectively, a transfer control pulse being delivered to the shift register stage arranged at one end of the plurality of shift stages; and a transfer unit having a plurality of transfer electrodes provided in correspondence with the shift stages of the shift register, transfer pulses being delivered from the shift stages of the shift register to the transfer electrodes, respectively, to apply transfer pulses in a predetermined order from the shift stages of the shift register to the transfer electrodes of the transfer unit, respectively, to thereby sequentially transfer signal charges stored below the transfer electrodes in a predetermined direction. In this device, the transfer electrodes are such that transfer electrodes having a large electrode area and transfer electrodes having a small electrode area are arranged one after other, and that they are connected to the respective stages of the shift register in order. It is desirable that the area relationship of the transfer electrodes is such that the ratio between transfer electrodes having a large electrode area and a small electrode area is set to a sufficiently large value. This charge transfer device is combined with a photoelectric conversion unit comprised of a plurality of photosensitive elements to constitute a solid state image pickup device.
摘要:
A contact type image sensor has a driving circuit part which sequentially drives a plurality of photoelectric conversion elements of a photodetector in blocks which respectively have an arbitrary number of photoelectric conversion elements. The driving circuit part has a pair of shift registers, one for sequentially selecting the block and the other for sequentially selecting each of the photoelectric conversion elements within the selected block.
摘要:
A CCD imager cell (36, 38) is formed at a face of a semiconductor substrate (10) and has first (36) and second (38) phase regions. A first clocked well (14) is provided for receiving charge integrated in the first phase region (36). A second clocked well (16) is provided for receiving charge integrated in a second phase region (38) adjacent the first phase region (36). A first gate (20) is insulatively disposed over the first clocked well (14), and a second gate (22) is insulatively disposed over the second clocked well (16). A controller controls .phi..sub.1 and .phi..sub.2 pulses such that the charge is transferred from a selected one of the first and second clocked wells (14, 16) to the other, thus integrating all of the charge in the cell into one clocked well thereof. This unified charge is then transferred out from clocked well to clocked well.
摘要:
A method and means for the electronic processing of an analog signal generated in a series addressed diode array to produce a digital signal indicative of the illumination of the photodiodes in the array is disclosed. A voltage ramp is applied to the array and the resulting current steps converted to a voltage signal. The voltage signal is differentiated and the resulting pulses are digitized to provide the illumination state of the photodiodes in the array. Alternately, the voltage signal is integrated in a series of windows. The results of each previous integration is substrated from the most current integration, producing a series of pulses that are digitized to provide the illumination state of the array. The processing may be synchronized by either dividing the sweep interval into evenly spaced intervals, by differentiating the voltage signal and detecting the derivative exceeding a threshold, or differentiating the voltage signal twice and detecting zero-crossings in the resulting signal. The voltage ramp may be made to increase in slope with time to help ensure that the addressing diodes begin conducting at equal time intervals.
摘要:
When the capacitance of the conductive columns of the line-transfer photosensitive device is higher than that of the photosensitive elements and of the read register, use is made of a reading circuit provided in the case of each conductive column with a plurality of charge storage capacitors separated by an MOS transistor. These MOS transistors operate in the saturating mode and pass signal charges derived from each conductive column from one capacitor to the next up to the read register. The storage capacitors have decreasing values as the distance from the read register becomes shorter. Transfer of the signal charges is accompanied by transfer of polarization charge quantities which decrease in value as the distance from the register becomes shorter. Once the transfer operations have been performed, these quantities of polarization charges are returned to their initial capacitors.
摘要:
An image sensor device provided with a linear array of photoelectric converting elements each having a capacitor on a control electrode area of a semiconductor transistor is disclosed. The image sensor device is provided with means for sequentially selecting the photoelectric converting elements, and the potential of the control electrode area of the selected photoelectric converting element is controlled through said capacitor, thereby accumulating the carriers generated by photoexcitation in said control electrode area and reading a voltage generated according to the amount of carrier accumulation or dissipating thus accumulated carriers.
摘要:
In a CCD image sensor, a plurality of horizontal CCD registers are disposed adjacent to an image sensing area having matrix-arrayed image sensing cells and a plurality of vertical CCD registers. In the CCD image sensor, the channel impurity concentration of second horizontal CCD register, located away from the image sensing area, is more higher than that of first horizontal CCD register. With this feature, when the charges are transferred to the second horizontal CCD register across the first horizontal register, the residual charges in the first horiozntal CCD register are remarkably reduced.
摘要:
An image sensor in which charge is transferred from an array of photosensing elements to a plurality of vertical CCDs arranged between columns of the photosensing element. The CCD channels are all gated near their ends by a first MOS electrode. Thereafter, separately controlled second MOS electrode inject the current in the channels into the substrate, from which it can be read. Preferably, the first MOS electrode has a tooth shape with the second MOS electrode in a staggered arrangement near the tooth side to reduce cross-channel interference. Also preferably, the substrate around the second electrodes is isolated.
摘要:
Charge accumulation read-out device of photosensitive detectors comprising a charge transfer shift register which receives the information from N detectors disposed in the same line. This register has the same storage area over the whole of its length and conveys the information collected at different times from these detectors without mixing it, means provide simultaneously several read-outs of the charges stored by certain given stages of the register, which ensures in phase summation of the information. The invention concerns the application of TDI read-out to photosensitive detector matrices.