公开(公告)号：US4807037A

公开(公告)日：1989-02-21

申请号：US117614

申请日：1987-11-06

申请人： Mamoru Iesaka ,  Yoshiyuki Matsunaga ,  Sohei Manabe ,  Nozomu Harada

发明人： Mamoru Iesaka ,  Yoshiyuki Matsunaga ,  Sohei Manabe ,  Nozomu Harada

IPC分类号： H01L27/148 ,  H04N5/372 ,  H04N3/14

CPC分类号： H04N3/1575 ,  H01L27/14831

摘要： In a CCD image sensor, a plurality of horizontal CCD registers are disposed adjacent to an image sensing area having matrix-arrayed image sensing cells and a plurality of vertical CCD registers. In the CCD image sensor, the channel impurity concentration of second horizontal CCD register, located away from the image sensing area, is more higher than that of first horizontal CCD register. With this feature, when the charges are transferred to the second horizontal CCD register across the first horizontal register, the residual charges in the first horiozntal CCD register are remarkably reduced.

摘要翻译： 在CCD图像传感器中，多个水平CCD寄存器被布置为与具有矩阵阵列的图像感测单元和多个垂直CCD寄存器的图像感测区域相邻。 在CCD图像传感器中，位于远离图像感测区域的第二水平CCD寄存器的沟道杂质浓度比第一水平CCD寄存器的沟道杂质浓度更高。 利用该特征，当电荷在第一水平寄存器中被传送到第二水平CCD寄存器时，第一水平CCD寄存器中的剩余电荷显着减小。

公开(公告)号：US5060070A

公开(公告)日：1991-10-22

申请号：US527444

申请日：1990-05-23

申请人： Yasuaki Nishida ,  Yoshiyuki Matsunaga ,  Nozomu Harada ,  Sohei Manabe ,  Yukio Endo

发明人： Yasuaki Nishida ,  Yoshiyuki Matsunaga ,  Nozomu Harada ,  Sohei Manabe ,  Yukio Endo

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/347 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374 ,  H04N5/378

CPC分类号： H04N3/1575 ,  H01L27/14831 ,  H04N5/335

摘要： A solid state image sensor comprises a CCD type image sensing device and a signal detector. This signal detector comprises an FDA type signal detection circuit connected to a signal pick-up terminal of the image sensing device and having a small amount of saturating signals and low noise, an FDA type signal detection circuit connected to the signal pick-up terminal and having a large amount of saturating signals and high noise, and a signal composing circuit for composing the outputs of both signal detection circuits and outputting a composed output and changing a composing ratio in accordance with the output of the FDA type signal detection circuit.

公开(公告)号：US4963956A

公开(公告)日：1990-10-16

申请号：US233130

申请日：1988-08-17

申请人： Sohei Manabe ,  Yoshiyuki Matsunaga ,  Nozomu Harada

发明人： Sohei Manabe ,  Yoshiyuki Matsunaga ,  Nozomu Harada

IPC分类号： H01L27/148 ,  H04N5/335 ,  H04N5/341 ,  H04N5/347 ,  H04N5/357 ,  H04N5/369 ,  H04N5/372 ,  H04N5/374

CPC分类号： H01L27/14831

摘要： A solid image pickup apparatus comprises a plurality of photo sensing elements, arranged on a semiconductor substrate two-dimensionally and spaced mutually by specified distances, for outputting electric charges on receiving light, a semiconductor channel formed among the photo sensing elements and transferring electric charges output from the photo sensing elements. The semiconductor channel comprises cross-shaped channel members, each channel member being located inside four photo sensing elements. A plurality of vertical transfer electrodes, are provided on the channel members, for giving electric potential to the channel members and having electric charges transferred to the channel members of the next stages. Each of the channel members comprises a wide-width part and a narrow-width part located between the wide-width part and the channel member of the next stage. The narrow-width part is formed by an ion-implanting method to have a higher impurity concentration than that of the wide-width part.

摘要翻译： 固体图像拾取装置包括多个光敏元件，其被二维地布置在相互间隔一定距离的半导体衬底上，用于在接收光上输出电荷;在光感测元件之间形成的半导体沟道和传送电荷输出 从感光元件。 半导体通道包括十字形通道构件，每个通道构件位于四个感光元件内。 多个垂直传输电极设置在通道构件上，用于给通道构件提供电势，并且将电荷转移到下一级的通道构件。 每个通道构件包括宽幅部分和位于下一级的宽度部分和通道部件之间的窄宽度部分。 窄带部分通过离子注入法形成，具有比宽幅部分更高的杂质浓度。

公开(公告)号：US09007504B2

公开(公告)日：2015-04-14

申请号：US13441697

申请日：2012-04-06

申请人： Sohei Manabe ,  Jeong-Ho Lyu

发明人： Sohei Manabe ,  Jeong-Ho Lyu

IPC分类号： H04N5/335 ,  H01L27/146

CPC分类号： H01L27/14609 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/1464

摘要： Circuitry to reduce signal noise characteristics in an image sensor. In an embodiment, a bit trace line segment is located between neighboring respective segments of a source follower power trace and an additional trace which is to remain at a first voltage level during a pixel cell readout time period. In another embodiment, for each such trace segment, a smallest separation between the trace segment and the respective neighboring other one of such trace segments is substantially equal to or less than some maximum length to provide for parasitic capacitance between the bit line trace and one or more other traces.

摘要翻译： 降低图像传感器信号噪声特性的电路。 在一个实施例中，位跟踪线段位于源极跟随器功率迹线的相邻相应段和在像素单元读出时间段期间保持在第一电压电平的附加迹线。 在另一个实施例中，对于每个这样的迹线段，迹线段和这些迹线段中相应的相邻另一个之间的最小间隔基本上等于或小于一些最大长度，以提供位线迹线与位线迹线之间的寄生电容， 更多的其他痕迹。

公开(公告)号：US08804021B2

公开(公告)日：2014-08-12

申请号：US13288880

申请日：2011-11-03

申请人： Sohei Manabe ,  Keh-Chiang Ku ,  Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

发明人： Sohei Manabe ,  Keh-Chiang Ku ,  Vincent Venezia ,  Hsin-Chih Tai ,  Duli Mao ,  Howard E. Rhodes

IPC分类号： H04N3/14 ,  H04N5/335

CPC分类号： H01L27/14643 ,  H01L27/1461 ,  H01L27/14612 ,  H01L27/14616 ,  H01L27/1463 ,  H01L27/14641

摘要： Techniques and mechanisms for improving full well capacity for pixel structures in an image sensor. In an embodiment, a first pixel structure of the image sensor includes an implant region, where a skew of the implant region corresponds to an implant angle, and a second pixel structure of the image sensor includes a transfer gate. In another embodiment, an offset of the implant region of the first pixel structure from the transfer gate of the second pixel structure corresponds to the implant angle.

摘要翻译： 用于提高图像传感器中像素结构的完整容量的技术和机制。 在一个实施例中，图像传感器的第一像素结构包括植入区域，其中植入区域的偏斜对应于植入角度，并且图像传感器的第二像素结构包括传输门。 在另一个实施例中，第一像素结构的注入区域与第二像素结构的传输门的偏移对应于植入角度。

公开(公告)号：US20140063304A1

公开(公告)日：2014-03-06

申请号：US13599343

申请日：2012-08-30

申请人： Sohei Manabe ,  Jeong-Ho Lyu

发明人： Sohei Manabe ,  Jeong-Ho Lyu

IPC分类号： H04N5/335 ,  H01L27/146

CPC分类号： H01L27/14612 ,  H01L27/14641 ,  H04N5/353 ,  H04N5/3532 ,  H04N5/3745 ,  H04N5/37452

摘要： An image sensor pixel includes a photosensitive region and pixel circuitry. The photosensitive region accumulates an image charge in response to light incident upon the image sensor. The pixel circuitry includes a transfer-storage transistor, a charge-storage area, an output transistor, and a floating diffusion region. The transfer-storage transistor is coupled between the photosensitive region and the charge-storage area. The output transistor has a channel coupled between the charge-storage area and the floating diffusion region and has a gate tied to a fixed voltage potential. The transfer-storage transistor causes the image charge to transfer from the photosensitive region to the charge-storage area and to transfer from the charge-storage area to the floating diffusion region.

摘要翻译： 图像传感器像素包括光敏区域和像素电路。 感光区域响应入射到图像传感器上的光积累图像电荷。 像素电路包括转移存储晶体管，电荷存储区域，输出晶体管和浮动扩散区域。 转移存储晶体管耦合在感光区域和电荷存储区域之间。 输出晶体管具有耦合在电荷存储区域和浮动扩散区域之间并且具有连接到固定电压电位的栅极的沟道。 转移储存晶体管使得图像电荷从光敏区域转移到电荷存储区域并从电荷存储区域转移到浮动扩散区域。

公开(公告)号：US08461660B2

公开(公告)日：2013-06-11

申请号：US13251036

申请日：2011-09-30

申请人： Sohei Manabe

发明人： Sohei Manabe

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14645

摘要： Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node.

公开(公告)号：US20130082313A1

公开(公告)日：2013-04-04

申请号：US13251036

申请日：2011-09-30

申请人： Sohei Manabe

发明人： Sohei Manabe

IPC分类号： H01L27/146

CPC分类号： H01L27/14603 ,  H01L27/14609 ,  H01L27/14641 ,  H01L27/14645

摘要： Techniques and mechanisms to improve potential well characteristics in a pixel cell. In an embodiment, a coupling portion of a pixel cell couples a reset transistor of the pixel cell to a floating diffusion node of the pixel cell, the reset transistor to reset a voltage of the floating diffusion node. In another embodiment, the pixel cell includes a shield line which extends athwart the coupling portion, where the shield line is to reduce a parasitic capacitance of the reset transistor to the floating diffusion node.

摘要翻译： 改善像素单元中潜在井特性的技术和机制。 在一个实施例中，像素单元的耦合部分将像素单元的复位晶体管耦合到像素单元的浮动扩散节点，复位晶体管复位浮动扩散节点的电压。 在另一个实施例中，像素单元包括屏蔽线，其延伸到耦合部分，屏蔽线将降低复位晶体管对浮动扩散节点的寄生电容。

公开(公告)号：US20090200580A1

公开(公告)日：2009-08-13

申请号：US12028679

申请日：2008-02-08

申请人： Howard E. Rhodes ,  Hidetoshi Nozaki ,  Sohei Manabe

发明人： Howard E. Rhodes ,  Hidetoshi Nozaki ,  Sohei Manabe

IPC分类号： H01L27/148 ,  H01L31/18

CPC分类号： H01L27/14609 ,  H01L27/14603 ,  H01L27/1464 ,  H01L27/14689

摘要： What is disclosed is an apparatus comprising a transfer gate formed on a substrate and a photodiode formed in the substrate next to the transfer gate. The photodiode comprises a shallow N-type collector formed in the substrate, a deep N-type collector formed in the substrate, wherein a lateral side of the deep N-type collector extends at least under the transfer gate, and a connecting N-type collector formed in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. Also disclosed is a process comprising forming a deep N-type collector in the substrate, forming a shallow N-type collector formed in the substrate, and forming a connecting N-type collector in the substrate between the deep N-type collector and the shallow N-type collector, wherein the connecting implant connects the deep N-type collector and the shallow N-type collector. A transfer gate is formed on the substrate next to the deep photodiode, wherein a lateral side of the deep N-type collector extends at least under the transfer gate. Other embodiments are disclosed and claimed.

摘要翻译： 所公开的是一种装置，其包括形成在基板上的转移栅极和形成在基板旁边的光电二极管。 光电二极管包括形成在基板中的浅N型集电体，形成在基板中的深N型集电体，其中深N型集电极的侧面至少在传输栅极下延伸，并且连接N型 在深N型集电体和浅N型集电体之间的基板中形成的集电体，其中连接注入物连接深N型集电极和浅N型集电极。 还公开了一种方法，包括在衬底中形成深N型集电体，形成在衬底中形成的浅N型集电体，并且在深N型集电极和浅层之间的衬底中形成连接的N型集电体 N型集电器，其中连接注入件连接深N型集电器和浅N型集电器。 在靠近深度光电二极管的衬底上形成传输栅极，其中深N型集电极的侧面至少在传输栅极下方延伸。 公开和要求保护其他实施例。

公开(公告)号：US20090128660A1

公开(公告)日：2009-05-21

申请号：US11942604

申请日：2007-11-19

申请人： Tiejun Dai ,  Sohei Manabe ,  Hongtao Yao ,  Jingzhou Zhang ,  Liping Deng

发明人： Tiejun Dai ,  Sohei Manabe ,  Hongtao Yao ,  Jingzhou Zhang ,  Liping Deng

IPC分类号： G01J1/18 ,  H04N5/217

CPC分类号： H04N5/14 ,  H01L31/1105 ,  H04N5/144 ,  H04N5/235 ,  H04N5/2357 ,  H04N5/3765

摘要： An apparatus for measuring the power frequency of a light source includes a photo-sensitive transistor, a modulators and a logic unit. The photo-sensitive transistor generates an electrical signal that is responsive to light incident thereon from the light source. The modulator generates a modulated signal based on the electrical signal that toggles at a rate substantially proportional to the power frequency of the light source. The logic unit is coupled to receive the modulated signal and determine its toggling frequency.

摘要翻译： 用于测量光源的功率频率的装置包括光敏晶体管，调制器和逻辑单元。 光敏晶体管产生响应于从光源入射到其上的光的电信号。 调制器基于电信号产生调制信号，该电信号以基本上与光源的功率频率成比例的速率切换。 逻辑单元被耦合以接收调制信号并确定其切换频率。