摘要:
The method of correcting a residual aberration of a projection optical system, which is used for projecting a pattern of a photo mask onto a photosensitive film located on a substrate, the method includes calculating an effect of a residual aberration on a given pattern on the basis of the residual aberration of the projection optical system obtained by measurement, calculating a moving amount of an adjustable aberration in the projection optical system such that the effect of the residual aberration becomes minimum in a given area, and moving the adjustable aberration in accordance with the calculated moving amount.
摘要:
An exposure apparatus includes a projection optical system for projecting a pattern formed a mask onto an object to be exposed, a correction optical element, provided between the mask and the projection optical system, for reducing a deformation of the pattern, and a detector of an oblique light projection system, provided at a side of a pattern surface of the mask, for detecting a surface shape of the mask through the correction optical element.
摘要:
An exposure apparatus includes a projection optical system of a catadioptric type and an optical element disposed on a reciprocating light path of the projection optical system. The optical element is movable along an optical axis direction.
摘要:
Linewidth variations and bias that result from MEF changes and reticle linewidth variations in a printed. substrate are controlled by correcting exposure dose and partial coherence at different spatial locations. In a photolithographic device for projecting an image of a reticle onto a photosensitive substrate, an adjustable slit is used in combination with a partial coherence adjuster to vary at different spatial locations the exposure dose received by the photosensitive substrate and partial coherence of the system. The linewidth variance and horizontal and vertical or orientation bias are calculated or measured at different spatial locations with reference to a reticle, and a corrected exposure dose and partial coherence is determined at the required spatial locations to compensate for the variance in linewidth and bias on the printed substrate. Improved printing of an image is obtained, resulting in the manufacturer of smaller feature size semiconductor devices and higher yields.
摘要:
Particular types of distortion within a lithographic system may be characterized by linewidth control parameters. Linewidth control parameters of any given line or feature within a printed pattern vary as a result of optical capabilities of the lithography apparatus used, particular characteristics of the reticle, focus setting, light dose fluctuations, etc. The instant invention uses focus offset coefficients to change the focus at points within a slot to compensate for the linewidth control parameter variations introduced by the factors contributing to such variations. Additionally, different focuses can be set dynamically along the scan for a particular slot point. A set, or sets, of focus offset coefficients is generated for a particular lithography apparatus, depending on the number of linewidth control parameters for which correction is desired.
摘要:
A transparent correcting plate is disposed between a reticle and a projection optical system. The correcting plate can be selectively inserted and withdrawn by a changing device. The correcting plate can be changed for another correcting plate stored in a storage unit according to need. The correcting plate has been polished so as to be capable of correcting random distortion, and thus it corrects random distortion produced by a projection exposure apparatus in which it is used. Further, a correcting plate is selected according to image distortion characteristics of a projection exposure apparatus used in the preceding exposure process or a projection exposure apparatus to be used in the subsequent process, thereby correcting the distortion of a projected image, and thus improving the overlay accuracy between two layers.
摘要:
In order to reduce a displacement in position between an under pattern and a resist pattern due to distortion, a reticle (18) formed with reticle alignment marks (32) at at least two points is used, reticle microscopes (34) are respectively placed in association with positions of the reticle alignment marks (32) at the time that the reticle (18) is supported by a reticle stage (20) and rotated about an optical axis (Z axis) of an image-forming optical system (26) by 90°, and the reticle alignment marks (32) are detected by any reticle microscope (34) even if the reticle (18) being supported by the reticle stage (20) is rotated about the Z axis.
摘要:
An exposure apparatus for lithographically transferring a pattern of an original onto a substrate to be exposed includes a first detector for detecting a position of an alignment mark on an exposure shot formed on the substrate, a second detector for detecting a local tilt adjacent to the alignment mark, the position of which is detected by the first detector, and a third detector for detecting a tilt of the exposure shot.
摘要:
A fabrication method for a projection optical system is capable of easily determining the corrected surface form as a desired continuous surface provided to a correcting member for correcting residual aberration. The fabrication includes: a measurement step of measuring aberration remaining in the projection optical system; a hypothesis step of hypothesizing a corrected surface form to be provided to the correcting member based on predetermined functions; a calculation step of calculating wavefront information of a light beam which passes through each of a plurality of regions on the correcting member having the corrected surface form hypothesized in the hypothesis step; and an evaluation step of evaluating the remaining aberration in the projection optical system when the hypothesized corrected surface form hypothesized in the hypothesis step is provided to the correcting member based on the measurement result in the measurement step and on the wavefront information calculated in the calculation step.
摘要:
A method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate. The method can include directing a beam of radiation along a radiation path toward a reflective medium, with the beam having a first shape in a plane generally transverse to the radiation path. The shape of the radiation beam can be changed from the first shape to a second, different shape by inclining a first portion of the reflective medium relative to a second portion of the reflective medium and reflecting the radiation beam toward a microlithographic substrate. The beam can then impinge on the microlithographic substrate after changing the shape from the first shape to the second shape, and at least a portion of the radiation can be inclined relative to the radiation path, for example, to enhance the imaging of selected diffractive orders.