Method of correcting projection optical system and method of manufacturing semiconductor device
    11.
    发明授权
    Method of correcting projection optical system and method of manufacturing semiconductor device 有权
    投影光学系统校正方法及制造半导体器件的方法

    公开(公告)号:US06741327B2

    公开(公告)日:2004-05-25

    申请号:US09893631

    申请日:2001-06-29

    IPC分类号: G03B2768

    CPC分类号: G03F7/706 G03F7/70258

    摘要: The method of correcting a residual aberration of a projection optical system, which is used for projecting a pattern of a photo mask onto a photosensitive film located on a substrate, the method includes calculating an effect of a residual aberration on a given pattern on the basis of the residual aberration of the projection optical system obtained by measurement, calculating a moving amount of an adjustable aberration in the projection optical system such that the effect of the residual aberration becomes minimum in a given area, and moving the adjustable aberration in accordance with the calculated moving amount.

    摘要翻译: 校正用于将光掩模的图案投影到位于基板上的感光膜上的投影光学系统的残余像差的方法,该方法包括基于在基础上计算给定图案上的残余像差的影响 通过测量获得的投影光学系统的残余像差,计算投影光学系统中的可变像差的移动量,使得在给定区域中残余像差的影响变得最小,并且根据 计算移动量。

    Exposure apparatus
    12.
    发明授权
    Exposure apparatus 失效
    曝光装置

    公开(公告)号:US06738128B2

    公开(公告)日:2004-05-18

    申请号:US10402978

    申请日:2003-04-01

    IPC分类号: G03B2768

    摘要: An exposure apparatus includes a projection optical system for projecting a pattern formed a mask onto an object to be exposed, a correction optical element, provided between the mask and the projection optical system, for reducing a deformation of the pattern, and a detector of an oblique light projection system, provided at a side of a pattern surface of the mask, for detecting a surface shape of the mask through the correction optical element.

    摘要翻译: 曝光装置包括投影光学系统,用于将形成掩模的图案投射到待曝光的物体上,设置在掩模和投影光学系统之间的校正光学元件,用于减小图案的变形;以及检测器 倾斜光投射系统,设置在掩模的图案表面的一侧,用于通过校正光学元件检测掩模的表面形状。

    DUV scanner linewidth control by mask error factor compensation
    14.
    发明授权
    DUV scanner linewidth control by mask error factor compensation 失效
    DUV扫描仪线宽控制由掩模误差因子补偿

    公开(公告)号:US06573975B2

    公开(公告)日:2003-06-03

    申请号:US09826214

    申请日:2001-04-04

    IPC分类号: G03B2768

    摘要: Linewidth variations and bias that result from MEF changes and reticle linewidth variations in a printed. substrate are controlled by correcting exposure dose and partial coherence at different spatial locations. In a photolithographic device for projecting an image of a reticle onto a photosensitive substrate, an adjustable slit is used in combination with a partial coherence adjuster to vary at different spatial locations the exposure dose received by the photosensitive substrate and partial coherence of the system. The linewidth variance and horizontal and vertical or orientation bias are calculated or measured at different spatial locations with reference to a reticle, and a corrected exposure dose and partial coherence is determined at the required spatial locations to compensate for the variance in linewidth and bias on the printed substrate. Improved printing of an image is obtained, resulting in the manufacturer of smaller feature size semiconductor devices and higher yields.

    摘要翻译: 由MEF引起的线宽变化和偏差以及印刷线路线宽变化。 通过校正不同空间位置的曝光剂量和部分相干性来控制底物。 在用于将掩模版的图像投影到感光基板上的光刻设备中,可调节狭缝与部分相干调节器组合使用,以在不同的空间位置处变化,由感光基底接收的曝光剂量和系统的部分相干性。 线宽方差和水平和垂直或方向偏差在不同的空间位置处参照掩模版计算或测量,并且在所需的空间位置处确定校正的曝光剂量和部分相干性,以补偿线宽和偏差上的偏差 印刷基板。 获得了改进的图像打印,导致了尺寸较小的半导体器件的制造商和更高的产量。

    Method and system for selective linewidth optimization during a lithographic process
    15.
    发明授权
    Method and system for selective linewidth optimization during a lithographic process 有权
    光刻过程中选择性线宽优化的方法和系统

    公开(公告)号:US06509952B1

    公开(公告)日:2003-01-21

    申请号:US09575997

    申请日:2000-05-23

    IPC分类号: G03B2768

    摘要: Particular types of distortion within a lithographic system may be characterized by linewidth control parameters. Linewidth control parameters of any given line or feature within a printed pattern vary as a result of optical capabilities of the lithography apparatus used, particular characteristics of the reticle, focus setting, light dose fluctuations, etc. The instant invention uses focus offset coefficients to change the focus at points within a slot to compensate for the linewidth control parameter variations introduced by the factors contributing to such variations. Additionally, different focuses can be set dynamically along the scan for a particular slot point. A set, or sets, of focus offset coefficients is generated for a particular lithography apparatus, depending on the number of linewidth control parameters for which correction is desired.

    摘要翻译: 光刻系统中的特定类型的失真可以通过线宽控制参数来表征。 作为所使用的光刻设备的光学能力,掩模版的特定特征,聚焦设置,光剂量波动等的结果,印刷图案中的任何给定线或特征的线宽控制参数变化。本发明使用聚焦偏移系数来改变 在时隙内的点处的焦点以补偿由这些变化造成的因素引起的线宽控制参数变化。 另外,可以沿着特定时隙点的扫描动态设置不同的焦点。 根据需要校正的线宽控制参数的数量,针对特定光刻设备产生聚焦偏移系数的集合或集合。

    Projection exposure apparatus
    16.
    发明授权
    Projection exposure apparatus 有权
    投影曝光装置

    公开(公告)号:US06333776B1

    公开(公告)日:2001-12-25

    申请号:US09184877

    申请日:1998-11-03

    申请人: Tetsuo Taniguchi

    发明人: Tetsuo Taniguchi

    IPC分类号: G03B2768

    摘要: A transparent correcting plate is disposed between a reticle and a projection optical system. The correcting plate can be selectively inserted and withdrawn by a changing device. The correcting plate can be changed for another correcting plate stored in a storage unit according to need. The correcting plate has been polished so as to be capable of correcting random distortion, and thus it corrects random distortion produced by a projection exposure apparatus in which it is used. Further, a correcting plate is selected according to image distortion characteristics of a projection exposure apparatus used in the preceding exposure process or a projection exposure apparatus to be used in the subsequent process, thereby correcting the distortion of a projected image, and thus improving the overlay accuracy between two layers.

    摘要翻译: 透明校正板设置在光罩和投影光学系统之间。 校正板可以通过改变装置选择性地插入和取出。 根据需要可以对存储在存储单元中的另一个校正板进行修正。 校正板已经被抛光,以便能够校正随机变形,从而校正由其使用的投影曝光设备产生的随机变形。 此外,根据在以前的曝光处理中使用的投影曝光装置的图像失真特性或将在随后的处理中使用的投影曝光装置来选择校正板,从而校正投影图像的失真,从而改善叠加 两层之间的精度。

    Apparatus and method for exposure
    17.
    发明授权
    Apparatus and method for exposure 失效
    曝光装置及方法

    公开(公告)号:US06757049B2

    公开(公告)日:2004-06-29

    申请号:US10259606

    申请日:2002-09-30

    申请人: Akiyuki Minami

    发明人: Akiyuki Minami

    IPC分类号: G03B2768

    摘要: In order to reduce a displacement in position between an under pattern and a resist pattern due to distortion, a reticle (18) formed with reticle alignment marks (32) at at least two points is used, reticle microscopes (34) are respectively placed in association with positions of the reticle alignment marks (32) at the time that the reticle (18) is supported by a reticle stage (20) and rotated about an optical axis (Z axis) of an image-forming optical system (26) by 90°, and the reticle alignment marks (32) are detected by any reticle microscope (34) even if the reticle (18) being supported by the reticle stage (20) is rotated about the Z axis.

    摘要翻译: 为了减少由于变形引起的下模式和抗蚀剂图案之间的位置偏移,使用在至少两点形成有标线片对准标记(32)的掩模版(18),将掩模版显微镜(34)分别放置在 与标线片对准标记(32)的位置相关联,在标线片(18)由标线片平台(20)支撑并且绕图像形成光学系统(26)的光轴(Z轴)旋转时,通过 90°,并且即使由标线片台(20)支撑的标线片(18)围绕Z轴旋转,也可通过任何掩模版显微镜(34)检测标线片对准标记(32)。

    Exposure apparatus, and device manufacturing method
    18.
    发明授权
    Exposure apparatus, and device manufacturing method 失效
    曝光装置和装置制造方法

    公开(公告)号:US06654096B1

    公开(公告)日:2003-11-25

    申请号:US09658462

    申请日:2000-09-08

    IPC分类号: G03B2768

    摘要: An exposure apparatus for lithographically transferring a pattern of an original onto a substrate to be exposed includes a first detector for detecting a position of an alignment mark on an exposure shot formed on the substrate, a second detector for detecting a local tilt adjacent to the alignment mark, the position of which is detected by the first detector, and a third detector for detecting a tilt of the exposure shot.

    摘要翻译: 用于将原稿的图案光刻转印到待曝光的基板上的曝光装置包括用于检测在基板上形成的曝光镜头上的对准标记的位置的第一检测器,用于检测与对准相邻的局部倾斜的第二检测器 标记,其位置由第一检测器检测;以及第三检测器,用于检测曝光镜头的倾斜。

    Fabrication method for correcting member, fabrication method for projection optical system, and exposure apparatus

    公开(公告)号:US06639651B2

    公开(公告)日:2003-10-28

    申请号:US10014136

    申请日:2001-12-13

    IPC分类号: G03B2768

    摘要: A fabrication method for a projection optical system is capable of easily determining the corrected surface form as a desired continuous surface provided to a correcting member for correcting residual aberration. The fabrication includes: a measurement step of measuring aberration remaining in the projection optical system; a hypothesis step of hypothesizing a corrected surface form to be provided to the correcting member based on predetermined functions; a calculation step of calculating wavefront information of a light beam which passes through each of a plurality of regions on the correcting member having the corrected surface form hypothesized in the hypothesis step; and an evaluation step of evaluating the remaining aberration in the projection optical system when the hypothesized corrected surface form hypothesized in the hypothesis step is provided to the correcting member based on the measurement result in the measurement step and on the wavefront information calculated in the calculation step.

    Method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate
    20.
    发明授权
    Method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate 有权
    用于成形和/或定向照射微光刻基片的辐射的方法和装置

    公开(公告)号:US06577379B1

    公开(公告)日:2003-06-10

    申请号:US09993053

    申请日:2001-11-05

    IPC分类号: G03B2768

    摘要: A method and apparatus for shaping and/or orienting radiation irradiating a microlithographic substrate. The method can include directing a beam of radiation along a radiation path toward a reflective medium, with the beam having a first shape in a plane generally transverse to the radiation path. The shape of the radiation beam can be changed from the first shape to a second, different shape by inclining a first portion of the reflective medium relative to a second portion of the reflective medium and reflecting the radiation beam toward a microlithographic substrate. The beam can then impinge on the microlithographic substrate after changing the shape from the first shape to the second shape, and at least a portion of the radiation can be inclined relative to the radiation path, for example, to enhance the imaging of selected diffractive orders.

    摘要翻译: 一种用于成形和/或定向照射微光刻基片的辐射的方法和装置。 该方法可以包括将辐射束沿着辐射路径引导朝向反射介质,其中光束在大致横向于辐射路径的平面中具有第一形状。 通过相对于反射介质的第二部分倾斜反射介质的第一部分并将辐射束反射向微光刻基板,可以将辐射束的形状从第一形状改变为第二形状。 然后在将形状从第一形状改变为第二形状之后,光束可以撞击在微光刻基板上,并且至少一部分辐射可以相对于辐射路径倾斜,例如以增强所选衍射级的成像 。