公开(公告)号：US08941305B2

公开(公告)日：2015-01-27

申请号：US14323467

申请日：2014-07-03

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Nathan P. Myhrvold ,  Tony S. Pan ,  Lowell L. Wood, Jr.

IPC: H01J33/00 ,  H01J17/22 ,  H01J1/308 ,  H01J1/304

CPC classification number: H01J1/308 ,  H01J1/304 ,  H01J19/38 ,  H01J29/02 ,  H01J29/481 ,  H01J45/00 ,  H01J2201/3048 ,  H01J2201/319

Abstract: A field emission device is configured as a heat engine.

Abstract translation: 场发射装置被配置为热发动机。

公开(公告)号：US20140361242A1

公开(公告)日：2014-12-11

申请号：US14323467

申请日：2014-07-03

Applicant: Elwha LLC

Inventor： Roderick A. Hyde ,  Jordin T. Kare ,  Nathan P. Myhrvold ,  Tony S. Pan ,  Lowell L. Wood, JR.

IPC: H01J1/308 ,  H01J1/304

CPC classification number: H01J1/308 ,  H01J1/304 ,  H01J19/38 ,  H01J29/02 ,  H01J29/481 ,  H01J45/00 ,  H01J2201/3048 ,  H01J2201/319

Abstract: A field emission device is configured as a heat engine.

公开(公告)号：US07816847B2

公开(公告)日：2010-10-19

申请号：US11180298

申请日：2005-07-13

Applicant: Tsutomu Nanataki ,  Hirofumi Yamaguchi ,  Ritsu Tanaka

Inventor： Tsutomu Nanataki ,  Hirofumi Yamaguchi ,  Ritsu Tanaka

IPC: H01J1/30 ,  H01J1/35 ,  H01J1/308

CPC classification number: H01J1/312 ,  H01J9/025 ,  H01J29/481 ,  H01J2329/00

Abstract: A dielectric device of higher performance is provided. An electron emitter, to which the dielectric device is applied is provided with: an emitter including a dielectric; and an upper electrode and a lower electrode to which drive voltage is applied in order to emit electrons. The emitter is formed by the aerosol deposition method or the sol impregnation method.

Abstract translation: 提供了更高性能的电介质器件。 施加电介质器件的电子发射体设置有：包括电介质的发射体; 以及为了发射电子而施加驱动电压的上电极和下电极。 发射体由气溶胶沉积法或溶胶浸渍法形成。

公开(公告)号：US06903365B1

公开(公告)日：2005-06-07

申请号：US10463796

申请日：2003-06-18

Applicant: Mizuhisa Nihei

Inventor： Mizuhisa Nihei

IPC: B82B1/00 ,  B82B3/00 ,  C23C16/26 ,  H01J1/308 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L23/52 ,  H01L29/06 ,  H01L29/78 ,  H01L51/30 ,  H01L29/72

CPC classification number: H01L21/76879 ,  B82Y10/00 ,  H01L23/485 ,  H01L23/53276 ,  H01L51/0048 ,  H01L2221/1094

Abstract: An electronic device utilizing electric conduction generated by the movement of electrons or positive holes of a semiconductor, includes a semiconductor member or members, a conductive member or members and an insulating member or members, the electronic device comprising a member or members formed of a metal silicide as the conductive member or members, and a carbon element linear structure or structures connected to the member or members formed of the conductive silicide. A production method of such an electronic device is also disclosed.

Abstract translation: 利用由半导体的电子或正空穴的移动产生的电导的电子器件包括半导体部件或导电部件或绝缘部件，该电子器件包括由金属形成的部件或部件 硅化物作为导电构件，以及连接到由导电硅化物形成的构件的碳元素线性结构或结构。 还公开了这种电子设备的制造方法。

公开(公告)号：US20050104056A1

公开(公告)日：2005-05-19

申请号：US10463796

申请日：2003-06-18

Applicant: Mizuhisa Nihei

Inventor： Mizuhisa Nihei

IPC: B82B1/00 ,  B82B3/00 ,  C23C16/26 ,  H01J1/308 ,  H01L21/205 ,  H01L21/28 ,  H01L21/285 ,  H01L21/3205 ,  H01L21/336 ,  H01L21/768 ,  H01L23/52 ,  H01L29/06 ,  H01L29/78 ,  H01L51/30

CPC classification number: H01L21/76879 ,  B82Y10/00 ,  H01L23/485 ,  H01L23/53276 ,  H01L51/0048 ,  H01L2221/1094

Abstract: An electronic device utilizing electric conduction generated by the movement of electrons or positive holes of a semiconductor, includes a semiconductor member or members, a conductive member or members and an insulating member or members, the electronic device comprising a member or members formed of a metal silicide as the conductive member or members, and a carbon element linear structure or structures connected to the member or members formed of the conductive silicide. A production method of such an electronic device is also disclosed.

Abstract translation: 利用由半导体的电子或正空穴的移动产生的电导的电子器件包括半导体部件或导电部件或绝缘部件，该电子器件包括由金属形成的部件或部件 硅化物作为导电构件，以及连接到由导电硅化物形成的构件的碳元素线性结构或结构。 还公开了这种电子设备的制造方法。

公开(公告)号：US5814832A

公开(公告)日：1998-09-29

申请号：US478656

申请日：1995-06-07

Applicant: Toshihiko Takeda ,  Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

Inventor： Toshihiko Takeda ,  Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

IPC: H01J1/308 ,  H01L29/06 ,  H01L29/04 ,  H01L29/47

CPC classification number: H01J1/308 ,  Y10S257/928

Abstract: An electron emitting semiconductor device is provided with a P-type semiconductor layer arranged on a semiconductor substrate having an impurity concentration. A Schottky barrier electrode is arranged on a surface of the P-type semiconductor layer. Plural P.sup.+ -type area units are positioned under and facing the Schottky barrier electrode. An N.sup.+ -type area is disposed in the vicinity of the P.sup.+ -type units. The impurity concentration is such as to cause an avalanche breakdown in at least a portion of the surfaces.

Abstract translation: 电子发射半导体器件设置有布置在具有杂质浓度的半导体衬底上的P型半导体层。 在P型半导体层的表面上配置有肖特基势垒电极。 多个P +型区域单元位于并面向肖特基势垒电极。 在P +型单元附近设置N +型区域。 杂质浓度使得至少部分表面产生雪崩击穿。

公开(公告)号：US5202571A

公开(公告)日：1993-04-13

申请号：US725476

申请日：1991-07-03

Applicant: Keiji Hirabayashi ,  Noriko Kurihara ,  Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

Inventor： Keiji Hirabayashi ,  Noriko Kurihara ,  Takeo Tsukamoto ,  Nobuo Watanabe ,  Masahiko Okunuki

IPC: H01J1/308

CPC classification number: H01J1/308

Abstract: An electron emitting device is provided with a p-semiconductor layer formed on a semiconductor substrate. The p-semiconductor layer is composed of a diamond layer.

Abstract translation: 电子发射器件设置有形成在半导体衬底上的p半导体层。 p半导体层由金刚石层构成。

公开(公告)号：US5077597A

公开(公告)日：1991-12-31

申请号：US568901

申请日：1990-08-17

Applicant: Umesh K. Mishra

Inventor： Umesh K. Mishra

IPC: H01J1/308

CPC classification number: B82Y15/00 ,  H01J1/308

Abstract: A planar doped barrier region of semiconductor material is coupled to a vacuum or gaseous region to provide electron emission from the planar doped barrier region into the vacuum or gaseous region. When a voltage is applied across the planar doped barrier region electrons flow from one end of the region to another. This flow results in the emission of electrons if the work function of the emission surface is less than the bandgap of the semiconductor material. The device of the present invention can be used as a vacuum microelectronic emitter, a vacuum microelectronic transistor, light source, klystron, or travelling wave tube.

Abstract translation: 半导体材料的平面掺杂阻挡区域耦合到真空或气体区域以提供从平面掺杂阻挡区域进入真空或气态区域的电子发射。 当跨平面掺杂阻挡区域施加电压时，电子从该区域的一端流向另一端。 如果发射表面的功函数小于半导体材料的带隙，则该流动导致电子的发射。 本发明的器件可以用作真空微电子发射器，真空微电子晶体管，光源，速调管或行波管。

公开(公告)号：US4871911A

公开(公告)日：1989-10-03

申请号：US77060

申请日：1987-07-17

Applicant: Gerardus G. P. Van Gorkom ,  Arthur M. E. Hoeberechts ,  Karel D. Van Der Mast ,  Harm Tolner

Inventor： Gerardus G. P. Van Gorkom ,  Arthur M. E. Hoeberechts ,  Karel D. Van Der Mast ,  Harm Tolner

IPC: H01J1/30 ,  H01J1/308 ,  H01J37/073

CPC classification number: H01J1/308 ,  H01J37/073

Abstract: An electron beam apparatus comprising a semiconductor electron emitter whose emissive surface dimensions are determined by dimensions of a p-n junction provided in the semiconductor element. By optimizing the dimensions of the emissive surface in relation to the electron-optical properties of the apparatus, an emitter is realized which combines optimum beam formation or imaging with a sufficiently large beam current and a high beam current density as required by the apparatus.

Abstract translation: 一种电子束装置，包括半导体电子发射器，其发射表面尺寸由设置在半导体元件中的p-n结的尺寸确定。 通过相对于装置的电子 - 光学性质优化发射表面的尺寸，实现了发射器，其结合最佳波束形成或成像与装置所要求的足够大的束流和高束电流密度。

公开(公告)号：US4709185A

公开(公告)日：1987-11-24

申请号：US743221

申请日：1985-06-10

Applicant: Arthur M. E. Hoeberechts ,  Henricus A. M. Van Hal ,  Harm Tolner ,  Gerardus G. P. Van Gorkom

Inventor： Arthur M. E. Hoeberechts ,  Henricus A. M. Van Hal ,  Harm Tolner ,  Gerardus G. P. Van Gorkom

IPC: H01J1/30 ,  H01J1/13 ,  H01J1/308 ,  H01J1/32 ,  H01J1/34 ,  H01J9/02 ,  H01J9/04 ,  H01J9/12 ,  C23C14/00

CPC classification number: H01J1/32 ,  H01J1/13 ,  H01J1/308 ,  H01J1/34 ,  H01J2201/3423

Abstract: An electron-emitting surface is provided with a material reducing the electron work function, which is obtained from a suitable reaction. The reaction mixture or the product to be decomposed, for example CsN.sub.3, is present in a surface depression of a semiconductor body, while one or more pn junctions act as a heating diode. Upon heating, cesium is released and deposited on the electron-emitting surface.

Abstract translation: 电子发射表面设置有从合适的反应获得的降低电子功函数的材料。 反应混合物或待分解的产物（例如CsN 3）存在于半导体本体的表面凹陷中，而一个或多个pn结用作加热二极管。 加热时，铯释放并沉积在电子发射表面上。