Abstract:
A charged-particle beam apparatus comprises a beam splitting/alignment system whereby individual beams or groups of individual beams can be independently aligned so that they can be brought out of focus in a focal plane of the individual beams, so that a beam limiting diaphragm arranged at that area is irradiated more uniformly with a smaller beam loss.
Abstract:
In a beam shaper superpositions of a deformed first diaphragm and a deformed or non-deformed second diaphragm can be realized by means of a quadrupole system. As a result of this a great freedom for adapting the spot cross-section to the patterns to be formed is obtained, as a result of which the number of writing pulses per pattern and hence the writing time for, for example, a chip can be considerably reduced and in particular non-orthogonal and non-linear transistions in the patterns can be written with greater definition.
Abstract:
By using, in beam path correction, a three-point adjustment of the beam wobbler, the beam path can be optimized for realizing minimum picture errors in the apparatus. For different lens energizations a picture-shifting correction can simply be carried out dynamically.
Abstract:
In order to find criteria for the adjustment of an optimum focus, lens correction, specimen shift and the like, measurements are performed by means of a beam wobbler and the corresponding generation of a variable F(s)=.THETA..vertline.(Xi-Yi+s).vertline.* in order to determine that s-value for which F(s) is a minimum. Using this image shift value is then used to make a correction preferably automatically.
Abstract:
A high resolution scanning electron microscope collects secondary Auger electrons through its objective lens to sensitively determine the chemical make-up with extremely fine positional resolution. The system uses a magnetic high resolution objective lens, such as a snorkel lens or a dual pole magnetic lens which provides an outstanding primary electron beam performance. The Auger electrons are deflected from the path of the primary beam by a transfer spherical capacitor. The primary beam is shielded, by a tube or plates, as it traverses the spherical capacitor to prevent aberration of the primary beam and the external wall of the shield maintains a potential gradient related to that of the spherical capacitor to reduce aberration of the primary electron beam. The coaxial configuration of the primary electron beam and the collected secondary electron beam allows the Auger image to coincide with the SEM view.
Abstract:
Amplification of the current of secondary electrons emanating from the specimen 14 is realized in an ESEM by avalanche-like ionization of the molecules 41 of the gas atmosphere. However, in order to achieve an adequate number of successive ionizations, a comparatively high value of the electric field at the detector electrode 46 is required and, because of the risk of electric breakdowns, the distance between the specimen and the detector electrode may not be smaller than a comparatively large minimum distance. The number of successive ionizations, and hence the current amplification, is thus limited. The invention proposes to configure the electric field of the detector 46, 50, co-operating with the magnetic field 52 of the immersion lens 8 already present in the ionization space, as an electric multipole field. In the case of electric multipoles, at a given field strength on the optical axis the electric field strength outside the optical axis may be substantially higher. Thus, while influencing the primary electron beam slightly only, a strong detector field can be provided so that the secondary electrons to be accelerated receive adequate energy to realize numerous multipole ionizations, and hence a high current amplification in the gas atmosphere around the specimen.
Abstract:
The focusing device 8 for the primary beam in a scanning electron microscope (SEM) consists in known manner of a combination of a magnetic gap lens 34 and a monopole lens 38. The secondary electrons released from the specimen are detected in accordance with the invention by a detector whose deflection unit 52, or the actual detector 64, 66, is arranged in a field-free space between the gap lens and the monopole lens. This space is rendered field-free by a screening plate 44 arranged underneath the gap lens. In order to achieve a high detector efficiency and a large field of vision, the pole tip of the focusing device 8 is provided with an attraction electrode 42 whose potential is higher than that of the specimen.
Abstract:
In an electron microscope correction of spherical and chromatic aberration can be achieved in a number of freely adjustable directions by using a multipole correction element whereby a magnetic or electrostatic octupole field, rotatable about the optical axis, or a combined rotatable magnetic and electrostatic quadrupole field is generated. A corrected overall image can be obtained by combination of images successively corrected in different directions. In the case of holographic images, correction in the direction perpendicular to the line direction in the hologram enhances the accuracy of phase determination. A correction element of this kind, having comparatively small dimensions of from 1 to 2 cm, can be simply mounted, notably in a transmission electron microscope, in a space provided for the stigmator.
Abstract:
A Variable Axis Lens system comprises at least two lenses which are arranged to be radially offset with respect to an optical axis of the apparatus. Because the lenses do not contain iron, the occurrence of disturbing eddy currents can be prevented. The lenses for axis displacement are preferably constructed as single ring conductors, a number of which can be readily arranged in one plane in a partly overlapping fashion. Such a system can also be arranged behind the object. For the lenses for axis displacement use is preferably made of a ceramic superconducting material having a comparatively high temperature coefficient and a comparatively high specific heat in the superconducting phase, so that they can be simply cooled from the outside.
Abstract:
An electron beam apparatus comprising a semiconductor electron emitter whose emissive surface dimensions are determined by dimensions of a p-n junction provided in the semiconductor element. By optimizing the dimensions of the emissive surface in relation to the electron-optical properties of the apparatus, an emitter is realized which combines optimum beam formation or imaging with a sufficiently large beam current and a high beam current density as required by the apparatus.