公开(公告)号：US20070157876A1

公开(公告)日：2007-07-12

申请号：US10587223

申请日：2005-04-27

申请人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

发明人： Hisashi Minemoto ,  Yasuo Kitaoka ,  Isao Kidoguchi ,  Yusuke Mori ,  Fumio Kawamura ,  Takatomo Sasaki ,  Hidekazu Umeda ,  Yasuhito Takahashi

IPC分类号： C30B11/00 ,  C30B23/00 ,  C30B21/06 ,  B01J3/04

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

摘要： A manufacturing apparatus of Group III nitride crystals and a method for manufacturing Group III nitride crystals are provided, by which high quality crystals can be manufactured. For instance, crystals are grown using the apparatus of the present invention as follows. A crystal raw material (131) and gas containing nitrogen are introduced into a reactor vessel (120), to which heat is applied by a heater (110), and crystals are grown in an atmosphere of pressure applied thereto. The gas is introduced from a gas supplying device (180) to the reactor vessel (120) through a gas inlet of the reactor vessel, and then is exhausted to the inside of a pressure-resistant vessel (102) through a gas outlet of the reactor vessel. Since the gas is introduced directly to the reactor vessel (120) without passing through the pressure-resistant vessel (102), the mixture of impurities attached to the pressure-resistant vessel (102) and the like into the site of the crystal growth can be prevented. Further, since the gas flows through the reactor vessel (120), there is no aggregation of an evaporating alkali metal, etc., at the gas inlet or the like, and such an alkali metal does not flow into the gas supplying device (180). As a result, the quality of Group III nitride crystals obtained can be improved.

摘要翻译： 提供III族氮化物晶体的制造装置和制造III族氮化物晶体的方法，由此可以制造高质量的晶体。 例如，使用本发明的装置如下生长晶体。 将晶体原料（131）和含氮气体引入反应器容器（120）中，通过加热器（110）向其施加热量，并在施加压力的气氛中生长晶体。 气体通过反应器容器的气体入口从气体供给装置（180）引入反应器容器（120），然后通过反应器的气体出口被排出到耐压容器（102）的内部 反应堆容器。 由于气体不通过耐压容器（102）直接引入反应器容器（120），附着在耐压容器（102）等上的杂质混合物进入晶体生长位置可以 被阻止 此外，由于气体流过反应器容器（120），所以在气体入口等处没有蒸发的碱金属等的聚集，并且这种碱金属不会流入气体供给装置（180 ）。 结果，可以提高获得的III族氮化物晶体的质量。

公开(公告)号：US20070157870A1

公开(公告)日：2007-07-12

申请号：US10587039

申请日：2005-08-24

申请人： Masataka Hourai ,  Wataru Sugimura ,  Toshiaki Ono

发明人： Masataka Hourai ,  Wataru Sugimura ,  Toshiaki Ono

IPC分类号： C30B15/00 ,  C30B21/06

CPC分类号： C30B29/06 ,  C30B15/04 ,  C30B15/203

摘要： This silicon wafer is obtained from a silicon single crystal grown by the CZ method in a hydrogen-containing inert gas atmosphere, and is a completely grown-in defect-free wafer containing no COPs or dislocation clusters throughout the wafer in the thickness and radial directions thereof, and all the portions consist essentially of an interstitial rich region. This method for growing silicon single crystals includes pulling a silicon single crystal in a hydrogen-containing inert gas atmosphere so as to expand the range of the pull rate for the PI region, wherein the pulling of the silicon single crystal is conducted at a pull rate within this expanded range of the pull rate for the PI region so as to grow a body portion that is an interstitial rich region.

摘要翻译： 该硅晶片由含氢惰性气体气氛中通过CZ法生长的硅单晶获得，并且是在整个晶片中在厚度和径向方向上不含COP或位错簇的完全生长的无缺陷晶片 并且所有部分基本上由富间隙组成。 用于生长硅单晶的方法包括在含氢惰性气体气氛中拉动单晶硅，以扩大PI区域的拉伸速率的范围，其中以单独的拉伸速率进行硅单晶的拉伸 在PI区域的拉伸速率的扩大范围内，以便增长作为间隙富集区域的主体部分。

公开(公告)号：US07235133B2

公开(公告)日：2007-06-26

申请号：US10030867

申请日：2001-02-16

申请人： Masanori Kimura

发明人： Masanori Kimura

IPC分类号： C30B15/00 ,  C30B21/06

CPC分类号： C30B15/14 ,  Y10S117/917 ,  Y10T117/10 ,  Y10T117/1052

摘要： By utilizing a crystal pulling apparatus for producing a single crystal according to the Czochralski method comprising at least a crucible to be charged with a raw material, a heater surrounding the crucible, and subsidiary heating means provided below the crucible, a single crystal is pulled or the raw material is additionally introduced with heating by the heater surrounding the crucible and the subsidiary heating means when the amount of the raw material melt in the crucible becomes a limited amount. Thus, there is provided a method for growing a single crystal at a high yield while preventing solidification of melt raw material decreased to a limited amount without affecting crystal quality, durability of crucible or the like even when a crucible having a large diameter is used.

摘要翻译： 通过利用Czochralski法制造单晶的晶体拉制装置，其至少包括要填充原料的坩埚，围绕坩埚的加热器和设置在坩埚下方的辅助加热装置，单晶被拉出或 当在坩埚中熔化的原料量变成有限量时，原料通过围绕坩埚和辅助加热装置的加热器被加热引入。 因此，即使当使用具有大直径的坩埚时，也提供了一种以高产率生长单晶的方法，同时防止熔融原料的固化降低到有限的量，而不影响晶体质量，坩埚等的耐久性。

公开(公告)号：US20070131158A1

公开(公告)日：2007-06-14

申请号：US10588750

申请日：2005-02-18

申请人： Masafumi Ura ,  Hidetoshi Kurogi ,  Toshiharu Yubitani ,  Noboru Furuichi

发明人： Masafumi Ura ,  Hidetoshi Kurogi ,  Toshiharu Yubitani ,  Noboru Furuichi

IPC分类号： C30B15/00 ,  C30B19/00 ,  C30B21/06

CPC分类号： C30B15/305 ,  Y10S117/917 ,  Y10T117/1068 ,  Y10T117/1072

摘要： The method for manufacturing a single crystal semiconductor achieves an object to reduce the impurity concentration nonuniformity within a semiconductor wafer plane and thus to improve the wafer planarity by introducing an impurity into the single crystal semiconductor more uniformly during the pulling of the single crystal semiconductor from a melt. In the course of pulling the single crystal semiconductor (6), the rotating velocity (ω2) of the single crystal semiconductor (6) being pulled is adjusted to a predetermined value or higher, and a magnetic field having a strength in a predetermined range is applied to the melt (5). Particularly, the crystal peripheral velocity is adjusted to 0.126 m/sec or higher, and M/V1/3 is adjusted to 35.5≦M/V1/3≦61.3. More desirably, the crystal peripheral velocity is adjusted to 0.141 m/sec or higher, and M/V1/3 is adjusted to 40.3≦M/V1/3≦56.4.

摘要翻译： 制造单晶半导体的方法实现了减少半导体晶片平面内的杂质浓度不均匀性的目的，从而通过在单晶半导体从单晶半导体的拉制过程中更均匀地引入杂质来提高晶片的平面性 熔化。 在拉动单晶半导体（6）的过程中，将被拉动的单晶半导体（6）的旋转速度（ω2）调整为规定值以上，将强度设定为规定范围的磁场 施加到熔体（5）上。 特别地，将晶体圆周速度调整为0.126m / sec以上，将M / V 1/3调整为35.5≤M/V≤1.3< = 61.3。 更希望的是，将晶体圆周速度调节到0.141m / sec或更高，并且将M / V 1/3调节到40.3 <= M / V 1/3 / <= 56.4。

公开(公告)号：US20070051296A1

公开(公告)日：2007-03-08

申请号：US11223158

申请日：2005-09-08

申请人： Katsuhiko Kemmochi ,  Robert Mosier ,  Yasuo Ohama

发明人： Katsuhiko Kemmochi ,  Robert Mosier ,  Yasuo Ohama

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C03B19/095 ,  C30B15/10 ,  Y02P40/57 ,  Y10S65/08 ,  Y10S117/90 ,  Y10T117/10

摘要： A silica glass crucible includes a stable, bubble-free inner layer and an opaque outer layer, both layers demonstrating reduced bubble growth during a Czochralski process. When used in the CZ process, little volume change is observed in the crucible wall, and the crucible has little influence on melt level. The present crucible is especially suited for slow silicon ingot pulling with reduced crystalline defects. The fusion process of the present invention controls the dynamic gas balance at the fusion front where formed grain is melted to dense fused silica.

摘要翻译： 石英玻璃坩埚包括稳定的无气泡的内层和不透明的外层，两层都表明在切克劳斯基工艺过程中气泡生长减少。 当在CZ工艺中使用时，在坩埚壁中观察到很小的体积变化，并且坩埚对熔体水平几乎没有影响。 本坩埚特别适用于具有减少的晶体缺陷的缓慢的硅锭拉动。 本发明的融合方法控制熔融前沿处的动态气体平衡，其中形成的晶粒被熔化成致密的熔融二氧化硅。

公开(公告)号：US20060283373A1

公开(公告)日：2006-12-21

申请号：US11390366

申请日：2006-03-28

申请人： Shuichi Inami ,  Nobumitsu Takase ,  Yasuhiro Kogure ,  Ken Hamada ,  Tsuyoshi Nakamura

发明人： Shuichi Inami ,  Nobumitsu Takase ,  Yasuhiro Kogure ,  Ken Hamada ,  Tsuyoshi Nakamura

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/00 ,  C30B29/06

摘要： A silicon single crystal is grown using the Czochralski method. During the crystal growth, a thermal stress is applied to at least a portion of the silicon single crystal. A gaseous substance containing hydrogen atoms is used as an atmospheric gas for growing the crystal.

公开(公告)号：US20060225640A1

公开(公告)日：2006-10-12

申请号：US11393809

申请日：2006-03-31

申请人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

发明人： Toshiaki Ono ,  Wataru Sugimura ,  Masataka Hourai

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B15/04 ,  C30B15/203 ,  C30B29/06

摘要： A silicon single crystal is manufactured by growing said crystal composed of a defect-free area free from the Grown-in defects by the CZ process, adding a gas of a hydrogen atom-containing substance to an atmosphere gas within a growing apparatus, and doping nitrogen and/or carbon in the crystal. Therefore, a wafer the whole surface of which is composed of the defect-free area free from the Grown-in defects and which can sufficiently and uniformly form BMD can be easily sliced. Such a wafer can be extensively used, since it can significantly reduce generation of characteristic defectives of integrated circuits to be formed thereon and contribute for improving the production yield as a substrate responding to the demand for further miniaturization and higher density of the circuits.

摘要翻译： 通过生长所述晶体制造所述晶体，所述晶体由通过CZ工艺的没有生长缺陷的无缺陷区域组成，向生长装置内的气氛气体中加入含氢原子的物质的气体，以及掺杂 氮和/或碳。 因此，可以容易地将其整个表面由无缺陷区域构成并且能够充分均匀地形成BMD的晶片构成。 可以广泛使用这样的晶片，因为它可以显着减少要在其上形成的集成电路的特征缺陷的产生，并有助于响应于进一步小型化和更高密度的电路的需求而提高作为衬底的生产成品率。

公开(公告)号：US20060201412A1

公开(公告)日：2006-09-14

申请号：US11366634

申请日：2006-03-02

申请人： Christian Poetisch ,  Gunther Wehrhahn ,  Lutz Parthier ,  Hans-Joerg Axmann ,  Joerg Staeblein

发明人： Christian Poetisch ,  Gunther Wehrhahn ,  Lutz Parthier ,  Hans-Joerg Axmann ,  Joerg Staeblein

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/12 ,  C30B11/00

摘要： The method produces highly uniform, low-stress single crystals, especially of calcium fluoride. A single crystal drawn from a melt apparatus with a suitable process is cooled and subsequently subjected to a tempering step. The method is characterized by rapid cooling in a temperature range between less than or equal to 1300° C. and greater than or equal to 1050° C. with a cooling rate of greater than or equal to 10 K/h and preferably less than or equal to 60 K/h.

摘要翻译： 该方法产生高度均匀的低应力单晶，特别是氟化钙。 将从具有合适工艺的熔融装置中拉出的单晶冷却并随后进行回火步骤。 该方法的特征在于在小于或等于1300℃和大于或等于1050℃的温度范围内快速冷却，冷却速率大于或等于10K / h，优选小于或等于或低于 等于60K / h。

公开(公告)号：US20060130740A1

公开(公告)日：2006-06-22

申请号：US10561205

申请日：2004-05-28

申请人： Masahiro Sakurada

发明人： Masahiro Sakurada

IPC分类号： C30B15/00 ,  C30B27/02 ,  C30B30/04 ,  C30B21/06 ,  C30B28/10

CPC分类号： C30B29/06 ,  C30B15/203

摘要： The present invention is a method for producing a single crystal with pulling the single crystal from a raw material melt by CZ method, wherein when growing the single crystal, where a pulling rate is defined as V, a temperature gradient of the crystal at a central portion of the crystal is defined as Gc, and a temperature gradient of the crystal at a peripheral portion of the crystal is defined as Ge, the temperature gradient Gc at the central portion of the crystal and the temperature gradient Ge at the peripheral portion of the crystal are controlled by changing a distance between the melt surface of the raw material melt and a heat insulating member provided so as to oppose to the surface of the raw material melt, thereby difference ΔG between the temperature gradient Gc at the central portion of the crystal and the temperature gradient Ge at the peripheral portion of the crystal is 0.5° C./mm or less, and also V/Gc which is a ratio of the pulling rate V and the temperature gradient Gc at the central portion of the crystal is controlled so that a single crystal including a desired defect region can be grown. Thereby, there is provided a method for producing a single crystal in which when the single crystal is grown by CZ method, V/G can be controlled without lowering the pulling rate V, and thus the single crystal including a desired defect region over a whole plane in the radial direction entirely in the direction of the crystal growth axis can be produced effectively for a short time and at high yield.

摘要翻译： 本发明是通过CZ法从原料熔体中拉出单晶的单晶的制造方法，其中，当生长单晶时，其中拉伸速度定义为V，中心处的晶体的温度梯度 将晶体的部分定义为Gc，将晶体的周边部分的晶体的温度梯度定义为Ge，晶体中心部分的温度梯度Gc和晶体的周边部分处的温度梯度Ge 通过改变原料熔体的熔融表面与设置成与原料熔体的表面相对设置的隔热部件之间的距离来控制晶体，从而在晶体的中心部分处的温度梯度Gc之间的差ΔG 并且晶体的周边部分的温度梯度Ge为0.5℃/ mm以下，V / Gc为牵引速度V与温度gr的比率 控制在晶体中心部分的使用者Gc，使得可以生长包括所需缺陷区域的单晶。 因此，提供了一种用于制造单晶的方法，其中当通过CZ方法生长单晶时，可以在不降低拉伸速度V的情况下控制V / G，从而整体上包括期望的缺陷区域的单晶 可以在短时间内以高产率有效地产生沿晶体生长轴方向的径向方向的平面。

公开(公告)号：US20060130739A1

公开(公告)日：2006-06-22

申请号：US11302128

申请日：2005-12-14

申请人： Seiji Sarayama ,  Hisanori Yamane ,  Masahiko Shimada ,  Masafumi Kumano ,  Hirokazu Iwata ,  Takashi Araki

发明人： Seiji Sarayama ,  Hisanori Yamane ,  Masahiko Shimada ,  Masafumi Kumano ,  Hirokazu Iwata ,  Takashi Araki

IPC分类号： C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

CPC分类号： C30B29/403 ,  C30B9/00 ,  C30B11/00 ,  C30B29/406 ,  H01L33/007 ,  H01S5/32341 ,  Y10T117/10 ,  Y10T117/1012 ,  Y10T117/1024 ,  Y10T117/1052 ,  Y10T117/106

摘要： A group-III nitride crystal growth method comprises the steps of: a) preparing a mixed molten liquid of an alkaline material and a substance at least containing a group-III metal; b) causing growth of a group-III nitride crystal from the mixed molten liquid prepared in the step a) and a substance at least containing nitrogen; and c) creating a state in which nitrogen can be introduced into the molten liquid prepared by the step a).