公开(公告)号：US07842260B2

公开(公告)日：2010-11-30

申请号：US11877562

申请日：2007-10-23

Applicant: Sung-chul Lee ,  Ju-yong Kim ,  Yong-kul Lee ,  Man-seok Han ,  Jun-sic Kim ,  Chan-ho Lee ,  Jin-goo Ahn

Inventor： Sung-chul Lee ,  Ju-yong Kim ,  Yong-kul Lee ,  Man-seok Han ,  Jun-sic Kim ,  Chan-ho Lee ,  Jin-goo Ahn

IPC: B01J8/02 ,  C01B3/02

CPC classification number: B01J19/249 ,  B01J23/40 ,  B01J2219/2455 ,  B01J2219/2459 ,  B01J2219/246 ,  B01J2219/2465 ,  B01J2219/2479 ,  B01J2219/2485

Abstract: Provided is a reaction vessel for a fuel cell, and more particularly to a reaction vessel exhibiting improved thermal efficiency, and a reaction device for a steam reforming reaction for a fuel cell. The reaction device includes a cylindrical reaction catalyst chamber on which a target reaction catalyst for a predetermined target reaction is disposed; and a tubular oxidation catalyst chamber surrounding the reaction catalyst chamber, comprising an oxidation reaction catalyst therein. The reaction device according features an increased contact area between catalyst and gas, and rapidly heating of the gas in contact with the catalyst to a desired reaction temperature.

Abstract translation: 提供一种用于燃料电池的反应容器，更具体地说，涉及一种表现出改善的热效率的反应容器，以及用于燃料电池的蒸汽重整反应的反应装置。 反应装置包括：圆筒状的反应催化剂室，配置有用于规定的目标反应的目标反应催化剂; 以及围绕反应催化剂室的管状氧化催化剂室，其中包含氧化反应催化剂。 反应装置的特征在于催化剂和气体之间的接触面积增加，并且将与催化剂接触的气体快速加热到所需的反应温度。

公开(公告)号：US20100269912A1

公开(公告)日：2010-10-28

申请号：US12639932

申请日：2009-12-16

Applicant: Jin-Goo Ahn ,  Sung-Chul Lee ,  In-Hyuk Son ,  Woo-Cheol Shin ,  Jong-Rock Choi ,  In-Seob Song

Inventor： Jin-Goo Ahn ,  Sung-Chul Lee ,  In-Hyuk Son ,  Woo-Cheol Shin ,  Jong-Rock Choi ,  In-Seob Song

IPC: G05D11/00

CPC classification number: F23D14/64 ,  F23D14/82 ,  F23K5/007 ,  F23K2900/05001 ,  Y10T137/2499 ,  Y10T137/86501 ,  Y10T137/87249

Abstract: A fuel supply apparatus for a combustor configured to prevent or substantially prevent a flashback from being generated from the combustor. A fuel supply apparatus includes a fuel distribution part having a first opening part and a second opening part, the fuel distribution part configured to alternately discharge a fuel from the first opening part and the second opening part; and a housing having a first channel and a second channel, wherein an intermediate part of the first channel is coupled to and in fluid communication with the first opening part, and an intermediate part of the second channel is coupled to and in fluid communication with the second opening part.

Abstract translation: 一种用于燃烧器的燃料供应装置，其构造成防止或基本上防止从燃烧器产生回火。 燃料供给装置包括具有第一开口部和第二开口部的燃料分配部，所述燃料分配部配置为从所述第一开口部和所述第二开口部交替地排出燃料; 以及具有第一通道和第二通道的壳体，其中所述第一通道的中间部分联接到所述第一通道并与所述第一开口部分流体连通，并且所述第二通道的中间部分与所述第二通道的中间部分连接， 第二开幕部分。

公开(公告)号：US20100226834A1

公开(公告)日：2010-09-09

申请号：US12656404

申请日：2010-01-28

Applicant: In-Hyuk Son ,  Woo-Cheol Shin ,  Sung-Chul Lee ,  Jin-Goo Ahn

Inventor： In-Hyuk Son ,  Woo-Cheol Shin ,  Sung-Chul Lee ,  Jin-Goo Ahn

IPC: B01J8/04

CPC classification number: B01J8/025 ,  B01J8/0473 ,  B01J19/2485 ,  B01J2208/00309 ,  B01J2208/00495 ,  B01J2208/00504 ,  B01J2208/00884 ,  B01J2208/025 ,  B01J2219/00006 ,  B01J2219/0004 ,  B01J2219/00117 ,  B01J2219/00157 ,  C01B3/323 ,  C01B3/382 ,  C01B3/384 ,  C01B3/386 ,  C01B3/48 ,  C01B2203/0233 ,  C01B2203/0244 ,  C01B2203/0261 ,  C01B2203/0288 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/0811 ,  C01B2203/1011 ,  C01B2203/1023 ,  C01B2203/1058 ,  C01B2203/1064 ,  C01B2203/1076 ,  C01B2203/1223 ,  C01B2203/1229 ,  C01B2203/1241 ,  C01B2203/1247 ,  Y02P20/52

Abstract: A fuel reformer including a reaction container including a first chamber, a first reactor in the first chamber, the first reactor, including a first catalyst, being configured to produce a first reformate by performing a steam reforming reaction on a first fuel, and having a first gas hourly space velocity (GHSV) at a set flow rate, a first heat source thermally connected to the first reactor, and a second reactor connected to the first reactor, the second reactor including a second catalyst, being configured to produce a second reformate having a lower carbon monoxide content than the first reformate, and having a second GHSV greater than the first GHSV at the set flow rate.

Abstract translation: 一种燃料重整器，包括反应容器，其包括第一室，第一室中的第一反应器，包括第一催化剂的第一反应器，其被配置为通过对第一燃料进行蒸汽重整反应而产生第一重整产物，并且具有 以一定流量的第一气时空速（GHSV），与第一反应器热连接的第一热源和连接到第一反应器的第二反应器，第二反应器包括第二催化剂，其被配置为产生第二重整产物 具有比第一重整产物更低的一氧化碳含量，并且在设定的流速下具有大于第一GHSV的第二GHSV。

公开(公告)号：US07778067B2

公开(公告)日：2010-08-17

申请号：US11896214

申请日：2007-08-30

Applicant: Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

Inventor： Eun-sik Kim ,  Kook-hyun Sunwoo ,  Sung-chul Lee

IPC: G11C11/15

CPC classification number: G11C11/16

Abstract: Provided is a magnetic memory device that uses a current induced switching (CID) method. The magnetic memory device that uses a CID method includes a lower electrode, a magnetic resistance structure that is formed on the lower electrode which comprises a free layer whose widths of two sides are varied, and an upper electrode formed on the magnetic resistance structure.

Abstract translation: 提供了使用电流感应开关（CID）方法的磁存储器件。 使用CID方法的磁存储器件包括下电极，形成在下电极上的磁阻结构，该电阻结构包括两侧宽度变化的自由层和形成在该磁阻结构上的上电极。

公开(公告)号：US20100157663A1

公开(公告)日：2010-06-24

申请号：US12457908

申请日：2009-06-25

Applicant: Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

Inventor： Sung-chul Lee ,  Sun-ae Seo ,  Young-jin Cho ,  Ji-young Bae ,  Ung-hwan Pi ,  Hyung-soon Shin ,  Seung-jun Lee

IPC: G11C11/00 ,  G11C7/00

CPC classification number: G11C11/1657 ,  G11B2005/0002 ,  G11C11/161 ,  G11C11/1655 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675

Abstract: An information storage device includes a memory region having a magnetic track and a write/read unit, and a control circuit connected to the memory region. First and second switching devices are connected to both ends of the magnetic track, and a third switching device is connected to the write/read unit. The control circuit controls the first to third switching devices, and supplies operating current to at least one of the magnetic track and the write/read unit.

Abstract translation: 信息存储装置包括具有磁道和写入/读取单元的存储区域以及连接到存储器区域的控制电路。 第一和第二开关装置连接到磁道的两端，并且第三开关装置连接到写/读单元。 控制电路控制第一至第三开关装置，并向至少一个磁道和写/读单元提供工作电流。

公开(公告)号：US20100149863A1

公开(公告)日：2010-06-17

申请号：US12461062

申请日：2009-07-30

Applicant: Sung-chul Lee ,  Jai-kwang Shin ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae

Inventor： Sung-chul Lee ,  Jai-kwang Shin ,  Sun-ae Seo ,  Young-jin Cho ,  Ung-hwan Pl ,  Ji-young Bae

IPC: G11C11/14

CPC classification number: G11C19/0808 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: A magnetic track includes first and second magnetic domain regions having different lengths and different magnetic domain wall movement speeds. A longer of the first and second magnetic domain regions serves as an information read/write region. An information storage device includes a magnetic track. The magnetic track includes a plurality of magnetic domain regions and a magnetic domain wall region formed between neighboring magnetic domain regions. The plurality of magnetic domain regions includes a first magnetic domain region and at least one second magnetic domain region having a smaller length than the first magnetic domain region. The information storage device further includes a first unit configured to perform at least one of an information recording operation and an information reproducing operation on the first magnetic domain region, and a magnetic domain wall movement unit configured to move a magnetic domain wall of the magnetic domain wall region.

Abstract translation: 磁道包括具有不同长度和不同磁畴壁移动速度的第一和第二磁畴区域。 第一和第二磁畴区域中较长的区域用作信息读/写区域。 信息存储装置包括磁道。 磁道包括多个磁畴区域和形成在相邻磁畴区域之间的磁畴壁区域。 多个磁畴区域包括第一磁畴区域和具有比第一磁畴区域更小的长度的至少一个第二磁畴区域。 信息存储装置还包括被配置为在第一磁畴区域上执行信息记录操作和信息再现操作中的至少一个的第一单元和被配置为移动磁畴的磁畴壁的磁畴壁移动单元 墙区域。

公开(公告)号：US20100135059A1

公开(公告)日：2010-06-03

申请号：US12591774

申请日：2009-12-01

Applicant: Ung-hwan Pi ,  Young-soo Park ,  Sun-ae Seo ,  Young-jin Cho ,  Sung-chul Lee ,  Ji-young Bae

Inventor： Ung-hwan Pi ,  Young-soo Park ,  Sun-ae Seo ,  Young-jin Cho ,  Sung-chul Lee ,  Ji-young Bae

IPC: G11C19/02 ,  G11C11/02

CPC classification number: G11C19/0841 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675

Abstract: Provided are information storage devices using movement of magnetic domain walls and methods of operating information storage devices. An information storage device includes a magnetic track and an operating unit. The magnetic track includes a plurality of magnetic domains separated by magnetic domain walls. The size of the operating unit is sufficient to cover at least two adjacent magnetic domains. And, the operating unit may be configured to write/read information to/from a single magnetic domain as well as a plurality of magnetic domains of the magnetic track.

Abstract translation: 提供了使用磁畴壁移动的信息存储装置和操作信息存储装置的方法。 信息存储装置包括磁道和操作单元。 磁道包括由磁畴壁分开的多个磁畴。 操作单元的尺寸足以覆盖至少两个相邻的磁畴。 并且，操作单元可以被配置为向/从单个磁畴以及磁道的多个磁畴写入/读取信息。

公开(公告)号：US20100119421A1

公开(公告)日：2010-05-13

申请号：US12588538

申请日：2009-10-19

Applicant: Jin-Goo Ahn ,  Sung-Chul Lee ,  In-Hyuk Son ,  Woo-Cheol Shin ,  In--Seob Song

Inventor： Jin-Goo Ahn ,  Sung-Chul Lee ,  In-Hyuk Son ,  Woo-Cheol Shin ,  In--Seob Song

IPC: B01J35/04 ,  B01J32/00 ,  C01B3/38 ,  B01J7/00

CPC classification number: B01J19/249 ,  B01J19/2485 ,  B01J35/04 ,  B01J2219/2454 ,  B01J2219/2459 ,  B01J2219/2465 ,  B01J2219/2479 ,  B01J2219/2481 ,  B01J2219/2497 ,  C01B3/40 ,  C01B2203/0233 ,  C01B2203/0283 ,  C01B2203/044 ,  C01B2203/047 ,  C01B2203/1023 ,  C01B2203/1058 ,  C01B2203/1064 ,  C01B2203/1076 ,  C01B2203/1082 ,  C01B2203/1217 ,  C01B2203/1241 ,  C01B2203/1247 ,  Y02P20/52

Abstract: A catalyst support includes a base member, and a plurality of paths extending through the base member in a first direction from a first end of the base member to a second end of the base member. Each path has a first end at the first end of the base member and a second end at the second end of the base member, and the first ends of the paths are disposed at different intervals from a plane that is perpendicular to the first direction.

Abstract translation: 催化剂载体包括基底构件和从第一方向延伸穿过基底构件的多个路径，从基底构件的第一端到基底构件的第二端。 每个路径在基部构件的第一端处具有第一端，并且在基部构件的第二端处具有第二端，并且路径的第一端以与垂直于第一方向的平面不同的间隔设置。

公开(公告)号：US07710757B2

公开(公告)日：2010-05-04

申请号：US12073103

申请日：2008-02-29

Applicant: Kwang-seok Kim ,  Sung-chul Lee ,  Sun-ae Seo

Inventor： Kwang-seok Kim ,  Sung-chul Lee ,  Sun-ae Seo

IPC: G11C19/00

CPC classification number: G11C11/14 ,  G11C19/0808 ,  Y10S977/933

Abstract: Provided are a magnetic track using magnetic domain wall movement and an information storage device including the same. A magnetic track may comprise a zigzag shaped storage track including a plurality of first magnetic layers in parallel with each other, and stacked separate from each other, and a plurality of second magnetic layers for connecting the plurality of first magnetic layers. The information storage device may include the magnetic track having a plurality of magnetic domains, current applying device connected to the magnetic track, and a read/write device on a middle portion of the magnetic track.

Abstract translation: 提供了使用磁畴壁移动的磁迹和包括该磁迹的信息存储装置。 磁迹可以包括一个之字形存储轨道，该轨道包括彼此平行并彼此分开堆叠的多个第一磁性层，以及用于连接多个第一磁性层的多个第二磁性层。 信息存储装置可以包括具有多个磁畴的磁道，连接到磁道的电流施加装置，以及在磁道的中间部分的读/写装置。

公开(公告)号：US20100103732A1

公开(公告)日：2010-04-29

申请号：US12650118

申请日：2009-12-30

Applicant: Sung-Yong Chung ,  Zhizheng Liu ,  Yugi Mizuguchi ,  Xuguang Alan Wang ,  Yi He ,  Ming Kwan ,  Darlene Hamilton ,  Sung-Chul Lee ,  Guowei Wang ,  Nancy Leong

Inventor： Sung-Yong Chung ,  Zhizheng Liu ,  Yugi Mizuguchi ,  Xuguang Alan Wang ,  Yi He ,  Ming Kwan ,  Darlene Hamilton ,  Sung-Chul Lee ,  Guowei Wang ,  Nancy Leong

IPC: G11C16/04 ,  G11C16/06

CPC classification number: G11C16/3418 ,  G11C16/0416 ,  G11C16/24 ,  G11C16/3427

Abstract: A system and methodology that can minimize disturbance during an AC operation associated with a memory, such as, program, read and/or erase, is provided. The system pre-charges all or a desired subset of the bit lines in a memory array to a specified voltage, during an AC operation to facilitate reducing AC disturbances between neighboring cells. A pre-charge voltage can be applied to all bit lines in a block in the memory array, or to bit lines associated with a selected memory cell and neighbor memory cells adjacent to the selected memory cell in the block. The system ensures that source and drain voltage levels can be set to desired levels at the same or substantially the same time, while selecting a memory cell. This can facilitate minimizing AC disturbances in the selected memory cell during the AC operation.

Abstract translation: 提供了一种能够在与诸如程序，读取和/或擦除之类的存储器相关联的AC操作期间最小化干扰的系统和方法。 在AC操作期间，系统将存储器阵列中的所有或所需的位线子集预充电到指定的电压，以便于减少相邻单元之间的AC干扰。 可以将预充电电压施加到存储器阵列中的块中的所有位线，或者对与所选择的存储器单元相关联的位线以及与块中所选择的存储单元相邻的相邻存储单元。 该系统确保在选择存储器单元时，源极和漏极电压电平可以在相同或基本相同的时间被设置为期望的电平。 这可以有助于在AC操作期间最小化所选择的存储器单元中的AC干扰。