公开(公告)号：US20040056580A1

公开(公告)日：2004-03-25

申请号：US10660633

申请日：2003-09-12

Applicant: SUMITOMO ELECTRIC INDUSTRIES, LTD. ,  JAPAN FINE CERAMICS CENTER

Inventor： Yoshiki Nishibayashi ,  Yutaka Ando ,  Takahiro Imai

IPC: H01J001/02

CPC classification number: H01J1/3044 ,  H01J2201/30457

Abstract: An electron emission element according to the present invention comprises a substrate, and a plurality of protrusions composed of diamond and protruding from the substrate. Each protrusion includes a columnar portion, the side face of which forms an inclination of approximately 90null relative to the surface of the substrate, and a tip portion, which is located on the columnar portion having a spicular end. A conductive layer is formed on the upper part of each columnar portion, and a cathode electrode film, which is electrically connected to the conductive layer, is formed on the side face of the columnar portion.

Abstract translation: 根据本发明的电子发射元件包括基底和由金刚石组成并从基底突出的多个突起。 每个突起包括柱状部分，其侧面相对于基底的表面形成约90°的倾斜，并且位于柱状部分上的尖端部分具有相关端。 在每个柱状部分的上部形成导电层，并且在柱状部分的侧面上形成与导电层电连接的阴极电极膜。

公开(公告)号：US06652762B2

公开(公告)日：2003-11-25

申请号：US09412536

申请日：1999-10-05

Applicant: Young Joon Baik ,  Eun Song Baik ,  Dong Ryul Jeon

Inventor： Young Joon Baik ,  Eun Song Baik ,  Dong Ryul Jeon

IPC: C03C1500

CPC classification number: H01J9/025 ,  C01B33/06 ,  C30B25/00 ,  C30B25/005 ,  C30B29/04 ,  C30B29/605 ,  H01J2201/30457

Abstract: A method for fabricating a nano-sized diamond whisker includes the steps of depositing a diamond film on a substrate, forming a nano-sized mask pattern on the deposited diamond film, and etching the diamond film by using the nano-sized pattern as an etching mask. The nano-sized diamond whisker can be used as a new field emission cold cathode device, thereby advancing a practical use of a field emission device having high performance, and can also be applied to various fields such as a new composite material and a mechanical device.

Abstract translation: 制造纳米尺寸金刚石晶须的方法包括以下步骤：在基底上沉积金刚石膜，在沉积的金刚石膜上形成纳米尺寸的掩模图案，并通过使用纳米尺寸图案作为蚀刻来蚀刻金刚石膜 面具。 纳米尺寸的金刚石晶须可以用作新的场致发射冷阴极器件，从而推进了具有高性能的场致发射器件的实际应用，并且还可以应用于各种领域，例如新的复合材料和机械装置 。

公开(公告)号：US06629869B1

公开(公告)日：2003-10-07

申请号：US08474277

申请日：1995-06-07

Applicant: Nalin Kumar ,  Chenggang Xie

Inventor： Nalin Kumar ,  Chenggang Xie

IPC: H01J902

CPC classification number: H01J1/316 ,  G09G3/22 ,  H01J1/304 ,  H01J1/3042 ,  H01J9/027 ,  H01J29/085 ,  H01J31/127 ,  H01J61/0677 ,  H01J63/06 ,  H01J2201/304 ,  H01J2201/30426 ,  H01J2201/30457 ,  H01J2201/319 ,  H01J2329/8625 ,  H01J2329/864 ,  Y10S977/891

Abstract: A field emission cathode is provided which includes a substrate and a conductive layer desposed adjacent the substrate. An electrically resistive pillar is disposed adjacent the conductive layer, the resistive pillar having a substantially flat surface spaced from and substantially parallel to the substrate. A layer of diamond is disposed adjacent the surface of the resistive pillar.

Abstract translation: 提供场发射阴极，其包括衬底和邻近衬底设置的导电层。 电阻柱设置在导电层附近，电阻柱具有与衬底间隔开并基本上平行于衬底的基本平坦的表面。 金刚石层邻近电阻柱的表面设置。

公开(公告)号：US20030155851A1

公开(公告)日：2003-08-21

申请号：US10378650

申请日：2003-03-05

Inventor： Pehr Pehrsson ,  James Butler

IPC: H01J001/02

CPC classification number: B82Y10/00 ,  H01J1/3044 ,  H01J1/312 ,  H01J9/022 ,  H01J9/025 ,  H01J2201/30446 ,  H01J2201/30457

Abstract: A method for fabricating an electron emitter is provided. This emitter structure may be used to form individual emitters or arrays of emitters. The method is comprised of implanting energetic ions into a diamond lattice to form cones or other continuous regions of damaged diamond. These regions are more electrically conducting than the surrounding diamond lattice, and have locally sharp tips at or near the point of entry of the ion into the diamond. The tips may then also be additionally coated with a layer of a wide band-gap semiconductor. An electrically conducting material may also be placed in proximity to the tips to generate an electric field sufficient to extract electrons from the conducting tips into either the region above the surface, or into the wide band-gap semiconductor layer in contact with the tips. Electrical contact is made to the electrically conducting damage tracks and the electrical circuit may be completed with an electrically conducting material on the surface of the wide band-gap semiconductor or diamond, or in the ambient above the surface of the emitter. The surface of the wideband gap semiconductor or diamond may be chemically modified to enhance the emission of electrons from the surface.

Abstract translation: 提供一种制造电子发射器的方法。 该发射器结构可以用于形成发射器的单独发射器或阵列。 该方法包括将能量离子注入到金刚石晶格中以形成损坏金刚石的锥体或其它连续区域。 这些区域比周围的金刚石晶格更具导电性，并且在离子进入金刚石的位置处或附近具有局部尖锐的尖端。 然后可以另外涂覆一层宽带隙半导体的尖端。 还可以将导电材料放置在靠近尖端处以产生足以将电子从导电尖端引入到表面上方的区域中的电场，或者与尖端接触的宽带隙半导体层中。 对导电损伤轨道进行电接触，并且电路可以在宽带隙半导体或金刚石的表面上或在发射器表面上的环境中的导电材料完成。 宽带隙半导体或金刚石的表面可以被化学修饰以增强从表面发射电子。

公开(公告)号：US06577045B1

公开(公告)日：2003-06-10

申请号：US09700694

申请日：2001-01-05

Applicant: Alexandr Alexandrovich Blyablin ,  Anton Valerievich Kandidov ,  Mikhail Arkadievich Timofeev ,  Boris Vadimovich Seleznev ,  Andrei Alexandrovich Pilevsky ,  Alexandr Tursunovich Rakhimov ,  Nikolai Vladislavovich Suetin ,  Vladimir Anatolievich Samorodov

Inventor： Alexandr Alexandrovich Blyablin ,  Anton Valerievich Kandidov ,  Mikhail Arkadievich Timofeev ,  Boris Vadimovich Seleznev ,  Andrei Alexandrovich Pilevsky ,  Alexandr Tursunovich Rakhimov ,  Nikolai Vladislavovich Suetin ,  Vladimir Anatolievich Samorodov

IPC: H01J1900

CPC classification number: H01J1/304 ,  H01J9/025 ,  H01J2201/30457 ,  Y10S977/788 ,  Y10S977/813 ,  Y10S977/89

Abstract: The present invention may be used in the production of highly efficient films for electron field emitters. The cold-emission cathode of the present invention comprises a substrate having a carbon film with an irregular structure applied thereon. This structure comprises carbon micro- and nano-ridges and/or micro- and nano-threads which are perpendicular to the surface of the substrate, which have a typical size of between 0.005 and 1 micron as well as a distribution density of between 0.1 and 100 &mgr;m−2, and which are coated with a diamond nano-film whose thickness represents a fraction of a micron. The method for producing the cathode involves sequentially depositing two carbon films. A carbon film with nano-barbs is first deposited on a substrate arranged on an anode by igniting a direct-current discharge at a density of between 0.15 and 0.5 A. This deposition is carried out in a mixture containing hydrogen and a carbon-containing additive, under a global pressure of between 50 and 300 torrs, using vapors of ethylic alcohol at a 5 to 15% concentration or vapors of methane at a 6 to 30% concentration, and at a temperature on the substrate of between 600 and 1100° C. A diamond nano-film is then deposited on the graphite film thus grown.

Abstract translation: 本发明可用于生产用于电子场发射体的高效膜。 本发明的冷发射阴极包括具有施加在其上的具有不规则结构的碳膜的基板。 该结构包括垂直于衬底表面的碳微纳米脊和/或微米和纳米线，其具有典型尺寸在0.005和1微米之间以及分布密度在0.1和 100mum-2，并且其上涂覆有厚度为微米级分的金刚石纳米膜。 阴极的制造方法依次沉积两个碳膜。 首先通过以0.15-0.5A的密度点燃直流放电，首先将具有纳米倒钩的碳膜沉积在布置在阳极上的衬底上。该沉积在含有氢和含碳添加剂的混合物中进行 在50至300托之间的全球压力下，使用浓度为5至15％的乙醇的蒸气或6至30％浓度的甲烷蒸气，并且在600至1100℃的温度下 然后将金刚石纳米膜沉积在由此生长的石墨膜上。

公开(公告)号：US20030067259A1

公开(公告)日：2003-04-10

申请号：US10254504

申请日：2002-09-26

Inventor： Michiyo Nishimura

IPC: H01J001/00

CPC classification number: B82Y10/00 ,  H01J1/304 ,  H01J31/127 ,  H01J2201/30446 ,  H01J2201/30457 ,  H01J2201/30469

Abstract: An electron-emitting device having a small electron beam size is proposed. In order to provide a high definition image display device having high image quality by utilizing this type of electron-emitting device and an electron source, a cathode electrode (2) has an opening which is trenched in a portion thereof, and further, the depth at which the opening is trenched is deep at a peripheral portion of the opening bottom face, and shallow at a central portion of the opening bottom face. A surface of an electron-emitting material is formed in a portion deeper than a boundary surface between the cathode electrode and an insulating layer.

Abstract translation: 提出了具有小电子束尺寸的电子发射器件。 为了通过利用这种类型的电子发射器件和电子源来提供具有高图像质量的高分辨率图像显示装置，阴极电极（2）具有在其一部分中被沟槽的开口，此外，深度 开口被挖槽的开口底面的周边部分是深的，并且在开口底面的中心部分处浅。 电子发射材料的表面形成在比阴极和绝缘层之间的边界面更深的部分。

公开(公告)号：US06515407B1

公开(公告)日：2003-02-04

申请号：US09141697

申请日：1998-08-28

Applicant: John M. Macaulay

Inventor： John M. Macaulay

IPC: H01J102

CPC classification number: B82Y10/00 ,  H01J1/3042 ,  H01J3/022 ,  H01J9/025 ,  H01J2201/30403 ,  H01J2201/30457 ,  H01J2201/319

Abstract: A gated filament structure for a field emission display includes a plurality of filaments. Included is a substrate, an insulating layer positioned adjacent to the substrate, and a metal gate layer position adjacent to the insulating layer. The metal gate layer has a plurality of gates, the metal gate layer having an average thickness “s” and a top metal gate layer planar surface that is substantially parallel to a bottom metal gate layer planar surface. The metal gate layer includes a plurality of apertures extending through the gates. Each aperture has an average width “r” along a bottom planar surface of the aperture. Each aperture defines a midpoint plane positioned parallel to and equally distant from the top metal gate layer planar surface and the bottom metal gate layer planar surface. A plurality of filaments are individually positioned in an aperture. Each filament has a filament axis. The intersection of the filament axis and the midpoint plane defines a point “O”. Each filament includes a filament tip terminating at a point “A”. A majority of all filament tips of the display have a length “L” between each filament tip at point A and point O along the filament axis where, L≦(s+r)/2.

Abstract translation: 用于场致发射显示器的门控灯丝结构包括多个灯丝。 包括衬底，邻近衬底定位的绝缘层以及与绝缘层相邻的金属栅极层位置。 金属栅极层具有多个栅极，金属栅极层具有平均厚度“s”以及基本上平行于底部金属栅极层平面的顶部金属栅极层平坦表面。 金属栅极层包括延伸通过栅极的多个孔。 每个孔具有沿着孔的底部平坦表面的平均宽度“r”。 每个孔限定平行于并等距离顶部金属栅极层平面和底部金属栅极层平面的中点平面。 多个细丝单独地定位在孔中。 每根灯丝都有一个灯丝轴线。 灯丝轴和中点平面的交点定义点“O”。 每个细丝包括终止于“A”点的细丝末端。 显示器的所有灯丝尖端的大部分在点A处的每个灯丝尖端和灯丝轴线处的点O之间具有长度“L”

公开(公告)号：US20020130407A1

公开(公告)日：2002-09-19

申请号：US10047044

申请日：2002-01-14

Inventor： Jeremy E. Dahl ,  Robert M. Carlson ,  Shenggao Liu

IPC: H01L023/34 ,  H01L023/48

CPC classification number: H01J1/3048 ,  B82Y10/00 ,  B82Y30/00 ,  C07C4/00 ,  C07C7/04 ,  C07C7/12 ,  C07C7/135 ,  C07C13/64 ,  C07C17/10 ,  C07C17/16 ,  C07C17/383 ,  C07C17/395 ,  C07C23/20 ,  C07C39/17 ,  C07C47/347 ,  C07C49/423 ,  C07C205/05 ,  C07C211/50 ,  C07C2603/54 ,  C07C2603/90 ,  C08G61/00 ,  C08G61/02 ,  C08G83/00 ,  C08L65/00 ,  H01J2201/30457 ,  H01L23/3732 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/451 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/48247 ,  H01L2924/00014 ,  H01L2924/01012 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/00 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: Novel uses of diamondoid-containing materials in the field of microelectronics are disclosed. Embodiments include, but are not limited to, thermally conductive films in integrated circuit packaging, low-k dielectric layers in integrated circuit multilevel interconnects, thermally conductive adhesive films, thermally conductive films in thermoelectric cooling devices, passivation films for integrated circuit devices (ICs), and field emission cathodes. The diamondoids employed in the present invention may be selected from lower diamondoids, as well as the newly provided higher diamondoids, including substituted and unsubstituted diamondoids. The higher diamondoids include tetramantane, pentamantane, hexamantane, heptamantane, octamantane, nonamantane, decamantane, and undecamantane. The diamondoid-containing material may be fabricated as a diamondoid-containing polymer, a diamondoid-containing sintered ceramic, a diamondoid ceramic composite, a CVD diamondoid film, a self-assembled diamondoid film, and a diamondoid-fullerene composite.

Abstract translation: 公开了在微电子学领域中含有金刚石的材料的新用途。 实施例包括但不限于集成电路封装中的导热膜，集成电路多层互连中的低k电介质层，导热粘合剂膜，热电冷却器件中的导热膜，用于集成电路器件（IC）的钝化膜 和场致发射阴极。 本发明中使用的类金刚石可以选自下面的金刚石，以及新提供的更高的金刚石，包括取代和未取代的金刚石。 较高的类金刚石包括四聚烷，五金刚，六金刚，七金刚烷，八甲烷，非金刚烷，十烷金和十一烷。 含金刚石的材料可以制造为含有金刚石的聚合物，含金刚石的烧结陶瓷，金刚石陶瓷复合材料，CVD金刚石膜，自组装的金刚石膜和类金刚石 - 富勒烯复合材料。

公开(公告)号：US06448700B1

公开(公告)日：2002-09-10

申请号：US09425410

申请日：1999-10-25

Applicant: Mool Chand Gupta ,  Ganapati Rao Myneni

Inventor： Mool Chand Gupta ,  Ganapati Rao Myneni

IPC: H01J102

CPC classification number: H01J1/3044 ,  H01J2201/30457

Abstract: The present invention provides a “solid” diamond, i.e. greater than 5&mgr; thick, electron emitter that has been “machined” using non-contact techniques to a point having a radius of less than about 100&mgr;, preferably below about 10&mgr; and most preferably between about 3 angstroms and about 3&mgr;. The solid diamond electron emitters of the present invention can perform, even at these small radii, as multi-point emitters depending upon the radius and roughness of the pointed tip and can be used in arrays to obtain relatively large area field emitters for applications where such larger field emissions are necessary. Production of the solid diamond emitters of the present invention is preferably accomplished using non-contact electron or ion beam machining techniques. Residual gas analyzers (RGA) and field emitter extractor gauge analyzers (FERGA) that use the solid diamond emitters are also described.

Abstract translation: 本发明提供了一种“固体”金刚石，即大于5μm厚的电子发射体，其已经使用非接触技术“加工”到半径小于约100μm，优选低于约10μm，最优选在约10μm之间的点 3埃，约3亩。 本发明的固体金刚石电子发射体即使在这些小半径处也可以作为多点发射体，取决于尖尖的半径和粗糙度，并且可以用于阵列以获得用于其中这样的应用的相对较大的面积场致发射体 较大的场排放是必要的。 本发明的固体金刚石发射体的制造优选使用非接触电子或离子束加工技术来实现。 还描述了使用固体金刚石发射体的残余气体分析仪（RGA）和场发射器提取仪分析仪（FERGA）。

公开(公告)号：US20020096107A1

公开(公告)日：2002-07-25

申请号：US09932833

申请日：2001-08-17

Inventor： Akira Fujishima ,  Hideki Masuda

IPC: C30B023/00 ,  C30B025/00 ,  C30B028/12 ,  C30B028/14

CPC classification number: C23C16/56 ,  C23C16/045 ,  C23C16/27 ,  H01J9/025 ,  H01J2201/30457

Abstract: A cylinder array of diamond having a dent in its cylinder top face is manufactured by subjecting a cylinder array of diamond to a plasma etching.

Abstract translation: 通过对金刚石的圆柱阵列进行等离子体蚀刻来制造在其圆柱顶面具有凹陷的菱形圆柱阵列。