公开(公告)号：US09195049B2

公开(公告)日：2015-11-24

申请号：US13554443

申请日：2012-07-20

Applicant: Kyu-hwan Choi ,  Jung-mok Bae ,  Hoon Song ,  Sang-yoon Lee ,  Yoon-sun Choi ,  Eok-su Kim

Inventor： Kyu-hwan Choi ,  Jung-mok Bae ,  Hoon Song ,  Sang-yoon Lee ,  Yoon-sun Choi ,  Eok-su Kim

IPC: G02B26/00 ,  G02B1/06 ,  G02B5/06 ,  G02B27/22 ,  H04N13/04 ,  G09G3/00 ,  G09G3/34 ,  G09G3/38

CPC classification number: G02B26/005 ,  G02B5/06 ,  G02B27/2214 ,  G09G3/003 ,  G09G3/3406 ,  G09G3/38 ,  H04N13/32

Abstract: A light refraction controlling panel, a 3D-display, and a method of operating a 3D-display are provided. The light refraction controlling panel includes a transparent substrate, a barrier wall on the transparent substrate, first to fourth electrodes on the barrier wall, the first to fourth electrodes being separated from each other, an electro-wetting prism within the barrier wall, the electro-wetting prism being configured to refract incident light to a desired direction, and an isolation layer between the barrier wall and the first to fourth electrodes, and the electro-wetting prism. One electrode of two adjacent electrodes of the first to fourth electrodes is inside an other electrode of the two adjacent electrodes.

Abstract translation: 提供了光折射控制面板，3D显示器和操作3D显示器的方法。 光折射控制面板包括透明基板，透明基板上的阻挡壁，阻挡壁上的第一至第四电极，第一至第四电极彼此分离，阻挡壁内的电润湿棱镜，电气 湿润棱镜被配置为将入射光折射到期望的方向，以及在阻挡壁和第一至第四电极之间的隔离层以及电润湿棱镜。 第一至第四电极的两个相邻电极的一个电极在两个相邻电极的另一个电极内。

公开(公告)号：US09035294B2

公开(公告)日：2015-05-19

申请号：US13550752

申请日：2012-07-17

Applicant: Joon-seok Park ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee ,  Seok-jun Seo

Inventor： Joon-seok Park ,  Tae-sang Kim ,  Hyun-suk Kim ,  Myung-kwan Ryu ,  Jong-baek Seon ,  Kyoung-seok Son ,  Sang-yoon Lee ,  Seok-jun Seo

IPC: H01L29/10 ,  B32B3/26 ,  H01L29/786 ,  H01L29/49

CPC classification number: B32B3/26 ,  H01L29/4908 ,  H01L29/786 ,  H01L29/7869 ,  Y10T428/24479

Abstract: A transistor may include a channel layer formed of an oxide semiconductor. The oxide semiconductor may include GaZnON, and a proportion of Ga content to a total content of Ga and Zn of the channel layer is about 0.5 to about 4.5 at %.

Abstract translation: 晶体管可以包括由氧化物半导体形成的沟道层。 氧化物半导体可以包括GaZnON，并且沟道层的Ga含量与Ga和Zn的总含量的比例为约0.5至约4.5原子％。

公开(公告)号：US08816330B2

公开(公告)日：2014-08-26

申请号：US13166425

申请日：2011-06-22

Applicant: Jong Won Chung ,  Do-Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

Inventor： Jong Won Chung ,  Do-Hwan Kim ,  Bang Lin Lee ,  Jeong il Park ,  Yong Wan Jin ,  Sang Yoon Lee

IPC: H01L29/08 ,  H01L35/24 ,  H01L51/00 ,  H01B1/02 ,  H01B1/12

CPC classification number: H01L51/0036 ,  C08G2261/162 ,  C08G2261/1646 ,  C08G2261/3223 ,  C08G2261/3229 ,  C08G2261/3243 ,  C08G2261/91 ,  C08G2261/92 ,  C08G2261/94 ,  C08G2261/95 ,  C08K3/10 ,  C08K3/16 ,  H01L51/0069 ,  H01L51/0541 ,  H01L51/0545 ,  C08L65/00

Abstract: An organic composition for a semiconductor device includes a compound for an organic semiconductor device including a structural unit; and a metal-containing compound selected from a transition element-containing compound, a lanthanide-containing compound, and a combination thereof, which results in improved charge mobility due to a reduced grain boundary.

Abstract translation: 用于半导体器件的有机组合物包括用于包括结构单元的有机半导体器件的化合物; 以及选自含过渡金属元素的化合物，含镧系元素的化合物及其组合的含金属化合物，由于晶界降低而导致电荷迁移率提高。

公开(公告)号：US08787928B2

公开(公告)日：2014-07-22

申请号：US12363224

申请日：2009-01-30

Applicant: Seung Min Choi ,  Sang Yoon Lee ,  Dae Gyu Kim ,  Jin Il Kim ,  Min Sook Park

Inventor： Seung Min Choi ,  Sang Yoon Lee ,  Dae Gyu Kim ,  Jin Il Kim ,  Min Sook Park

IPC: H04W24/00

CPC classification number: H04W4/02 ,  G08G1/093 ,  H04L29/12792 ,  H04L61/60 ,  H04L61/609 ,  H04L67/18 ,  H04M1/72561 ,  H04M1/72572 ,  H04M2250/10 ,  H04W4/022 ,  H04W4/18

Abstract: A location-based information service method for improving utilization of location-based information services and a mobile terminal for implementing the location-based information service method are provided. A method for providing an information service using a mobile terminal includes acquiring, at a mobile terminal, location information, determining an Internet Protocol (IP) address based on the location information, and receiving service information from a cyber space associated with a service provider that corresponds to the IP address.

Abstract translation: 提供了一种用于提高基于位置的信息服务的利用的基于位置的信息服务方法和用于实现基于位置的信息服务方法的移动终端。 一种使用移动终端提供信息服务的方法包括在移动终端处获取位置信息，基于位置信息确定因特网协议（IP）地址，以及从与服务提供商相关联的网络空间接收服务信息， 对应于IP地址。

公开(公告)号：US08735229B2

公开(公告)日：2014-05-27

申请号：US12110744

申请日：2008-04-28

Applicant: Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

Inventor： Kyoung-seok Son ,  Sang-yoon Lee ,  Myung-kwan Ryu ,  Tae-sang Kim ,  Jang-yeon Kwon ,  Kyung-bae Park ,  Ji-sim Jung

IPC: H01L21/00

CPC classification number: H01L29/7869

Abstract: A ZnO-based thin film transistor (TFT) is provided herein. Also provided is a method for manufacturing the TFT. The ZnO-based TFT is very sensitive to the oxygen concentration present in a channel layer. In order to prevent damage to a channel layer of a bottom gate TFT, and to avoid a deep negative threshold voltage resulting from damage to the channel layer, the method for manufacturing the ZnO-based TFT comprises formation of an etch stop layer or a passivation layer comprising unstable or incompletely bonded oxygen, and annealing the layers to induce an interfacial reaction between the oxide layer and the channel layer and to reduce the carrier concentration.

Abstract translation: 本文提供了一种ZnO基薄膜晶体管（TFT）。 还提供了一种用于制造TFT的方法。 ZnO基TFT对通道层中存在的氧浓度非常敏感。 为了防止对底栅TFT的沟道层的损坏，并且为了避免由于对沟道层的损坏而产生的深负阈值电压，制造ZnO基TFT的方法包括形成蚀刻停止层或钝化层 层，其包含不稳定或不完全结合的氧，并且退火层以在氧化物层和沟道层之间引起界面反应并降低载流子浓度。

公开(公告)号：US08715429B2

公开(公告)日：2014-05-06

申请号：US13384779

申请日：2010-08-04

Applicant: You-Hwan Lee ,  Dong-Hyun Kim ,  Sang-Yoon Lee ,  Ha-Ni Kim ,  Yong-Sik Park

Inventor： You-Hwan Lee ,  Dong-Hyun Kim ,  Sang-Yoon Lee ,  Ha-Ni Kim ,  Yong-Sik Park

IPC: C22C38/02 ,  C22C38/04 ,  C21D8/06 ,  C21D7/13

CPC classification number: C22C38/02 ,  C21D8/021 ,  C21D8/0263 ,  C21D8/06 ,  C21D2211/005 ,  C21D2211/009 ,  C22C38/04

Abstract: There is provided a rolled steel with excellent toughness, a drawn wire rod prepared by drawing the rolled steel, and a method for manufacturing the same, in which even if a heating step is omitted, the toughness of the steel can be improved by securing a degenerated pearlite structure in an internal structure of the rolled steel by controlling a content of Mn among components and cooling conditions, and then preventing C diffusion. The rolled steel according to the present invention includes C: 0.15˜0.30%, Si: 0.1˜0.2%, Mn: 1.8˜3.0%, P: 0.035% or less, S: 0.040% or less, the remainder Fe, and other inevitable impurites, as a percentage of weight, in which the microstucture of the rolled steel is composed of ferrite and pearlite including cementite with 150 nm or less of thickness.

Abstract translation: 提供具有优异韧性的轧制钢，通过拉制轧制钢制备的拉丝线及其制造方法，其中即使省略加热步骤，也可以通过确保钢的韧性来提高钢的韧性 通过控制成分中的Mn含量和冷却条件，然后防止C扩散，在轧制钢的内部结构中退化珠光体组织。 根据本发明的轧制钢包括C：0.15〜0.30％，Si：0.1〜0.2％，Mn：1.8〜3.0％，P：0.035％以下，S：0.040％以下，剩余部分Fe等 不可避免的杂质占重量的百分比，其中轧制钢的组织由铁素体和珠光体组成，包括厚度在150nm以下的渗碳体。

公开(公告)号：US08664021B2

公开(公告)日：2014-03-04

申请号：US13297495

申请日：2011-11-16

Applicant: Sun-kook Kim ,  In-seo Kee ,  Sang-yoon Lee

Inventor： Sun-kook Kim ,  In-seo Kee ,  Sang-yoon Lee

IPC: H01L21/00 ,  H01L33/00

CPC classification number: H01L27/3293 ,  H01L25/048 ,  H01L27/3211 ,  H01L27/322 ,  H01L51/5253 ,  H01L51/5265 ,  H01L51/5281 ,  H01L2251/5315 ,  H01L2251/5338 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An organic light-emitting display device includes a plurality of first and second electrodes which are spaced apart from each other on a substrate, a plurality of light-emitting layers between the first and second electrodes, a flexible thin encapsulation film on the second electrodes, and a color filter on the flexible thin encapsulation film.

Abstract translation: 一种有机发光显示装置，包括在基板上彼此间隔开的多个第一和第二电极，在第一和第二电极之间的多个发光层，在第二电极上的柔性薄封装膜， 和柔性薄膜封装膜上的滤色片。

公开(公告)号：US08593372B2

公开(公告)日：2013-11-26

申请号：US13360991

申请日：2012-01-30

Applicant: In-seo Kee ,  Sang-yoon Lee ,  Hong-shik Shim

Inventor： In-seo Kee ,  Sang-yoon Lee ,  Hong-shik Shim

IPC: G09G5/00

CPC classification number: H04M1/0266 ,  H04M1/0202

Abstract: A foldable display device includes a first display panel which displays a portion of an image; a second display panel which displays a second portion different from the first portion of the image; a first protecting window on the first display panel; a second protecting window on the second display panel; and a flexible material layer between the first and second protecting windows. Side surfaces of the first and second protecting windows which contact the flexible material layer, respectively, are inclined with respect to a surface of each of the first and second protecting windows.

Abstract translation: 可折叠显示装置包括：第一显示面板，其显示图像的一部分; 显示与图像的第一部分不同的第二部分的第二显示面板; 第一显示面板上的第一保护窗口; 第二显示面板上的第二保护窗; 以及在第一和第二保护窗之间的柔性材料层。 分别接触柔性材料层的第一和第二保护窗的侧表面相对于第一和第二保护窗中的每一个的表面倾斜。

公开(公告)号：US08362471B2

公开(公告)日：2013-01-29

申请号：US12929078

申请日：2010-12-29

Applicant: Eun Jeong Jeong ,  Hyun Sik Moon ,  Jeong Ii Park ,  Sang Yoon Lee

Inventor： Eun Jeong Jeong ,  Hyun Sik Moon ,  Jeong Ii Park ,  Sang Yoon Lee

IPC: H01L35/24

CPC classification number: H01L51/0056 ,  C07D495/04 ,  C07F7/0812 ,  H01L51/0058 ,  H01L51/0074 ,  H01L51/0094 ,  H01L51/0545 ,  Y02E10/549 ,  Y02P70/521

Abstract: Disclosed are a novel aromatic enediyne derivative, an organic semiconductor thin film using the same, and an electronic device. Example embodiments pertain to an aromatic enediyne derivative which enables the formation of a chemically and electrically stable and reliable semiconductor thin film using a solution process, e.g., spin coating and/or spin casting, at about room temperature when applied to devices, an organic semiconductor thin film using the same, and an electronic device including the organic semiconductor thin film. A thin film having a relatively large area may be formed through a solution process, therefore simplifying the manufacturing process and decreasing the manufacturing cost. Moreover, it is possible to provide an organic semiconductor that may be effectively applied to various fields including organic thin film transistors, electroluminescent devices, solar cells, and memory.

Abstract translation: 公开了一种新型芳族烯二炔衍生物，使用其的有机半导体薄膜和电子器件。 示例性实施方案涉及芳族烯二炔衍生物，其能够在施加到器件时在大约室温下使用溶液方法（例如旋涂和/或旋转浇铸）形成化学和电稳定且可靠的半导体薄膜，有机半导体 使用其的薄膜，以及包括有机半导体薄膜的电子器件。 可以通过溶液工艺形成具有相对较大面积的薄膜，从而简化制造工艺并降低制造成本。 此外，可以提供可有效地应用于有机薄膜晶体管，电致发光器件，太阳能电池和存储器等各种领域的有机半导体。

公开(公告)号：US08313978B2

公开(公告)日：2012-11-20

申请号：US13200407

申请日：2011-09-23

Applicant: Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

Inventor： Bang Lin Lee ,  Kook Min Han ,  Jung Han Shin ,  Sang Yoon Lee ,  Eun Jeong Jeong

IPC: H01L51/54

CPC classification number: H01L51/0043 ,  H01L51/0036 ,  H01L51/0512 ,  Y10T428/31533

Abstract: An exemplary organic semiconductor copolymer includes a polymeric repeat structure having a polythiophene structure and an electron accepting unit. The electron accepting unit has at least one electron-accepting heteroaromatic structure with at least one electron-withdrawing imine nitrogen in the heteroaromatic structure or a thiophene-arylene comprising a C2-30 heteroaromatic structure. Methods of synthesis and electronic devices incorporating the disclosed organic semiconductors, e.g., as a channel layer, are also disclosed.

Abstract translation: 示例性的有机半导体共聚物包括具有聚噻吩结构的聚合物重复结构和电子接受单元。 电子接收单元具有在杂芳族结构中具有至少一个吸电子亚胺氮的至少一个电子接受杂芳族结构或包含C2-30杂芳族结构的噻吩 - 亚芳基。 还公开了合成方法和结合所公开的有机半导体的电子器件，例如作为沟道层。