公开(公告)号：US08687412B2

公开(公告)日：2014-04-01

申请号：US13438006

申请日：2012-04-03

Applicant: Yue-Der Chih ,  Chun-Jung Lin ,  Kai-Chun Lin ,  Hung-Chang Yu

Inventor： Yue-Der Chih ,  Chun-Jung Lin ,  Kai-Chun Lin ,  Hung-Chang Yu

IPC: G11C11/00

CPC classification number: G11C11/161 ,  G11C11/1673

Abstract: A reference circuit discerns high or low resistance states of a magneto-resistive memory element such as a bit cell. The reference circuit has magnetic tunnel junction (MTJ) elements in complementary high and low resistance states RH and RL, providing a voltage, current or other parameter for comparison against the memory element to discern a resistance state. The parameter represents an intermediate resistance straddled by RH and RL, such as an average or twice-parallel resistance. The reference MTJ elements are biased from the same read current source as the memory element but their magnetic layers are in opposite order, physically or by order along bias current paths. The reference MTJ elements are biased to preclude any read disturb risk. The memory bit cell is coupled to the same bias polarity source along a comparable path, being safe from read disturb risk in one of its two possible logic states.

Abstract translation: 参考电路识别诸如位单元的磁阻存储元件的高或低电阻状态。 参考电路具有互补的高电阻状态RH和低电阻状态RL的磁隧道结（MTJ）元件，提供用于与存储元件进行比较的电压，电流或其它参数以识别电阻状态。 该参数表示由RH和RL跨过的中间电阻，例如平均或两倍平行的电阻。 参考MTJ元件从与存储元件相同的读取电流源偏置，但它们的磁性层在物理上或沿着偏置电流路径的顺序是相反的顺序。 参考MTJ元件被偏置以排除任何读取干扰风险。 存储器位单元沿着可比较的路径耦合到相同的偏置极性源，在其两种可能的逻辑状态之一中可以避免读取干扰风险。

公开(公告)号：US08675724B2

公开(公告)日：2014-03-18

申请号：US12836999

申请日：2010-07-15

Applicant: Yung-Chow Peng ,  Yu-Chun Lin

Inventor： Yung-Chow Peng ,  Yu-Chun Lin

IPC: H03K5/159

CPC classification number: H04L25/03885 ,  H04L25/03006 ,  H04L25/03057 ,  H04L2025/03535 ,  H04L2025/03681 ,  H04L2025/03707 ,  H04L2025/03745

Abstract: A method for updating a tap coefficient of a decision feedback equalizer is provided. The method includes sampling a first input signal received by a sampler of a decision feedback equalizer. It is determined if an amplitude of the first input signal falls within a range defined between a first predetermined voltage level and a second predetermined voltage level. If the amplitude of the first input signal falls outside the range, a tap coefficient is updated to generate an updated tap coefficient that is fed back to adjust an amplitude of a second input signal received at an input end of the decision feedback equalizer. If the amplitude of the first input signal falls within the range, the tap coefficient is free from being updated.

Abstract translation: 提供了一种用于更新判决反馈均衡器的抽头系数的方法。 该方法包括对由判决反馈均衡器的采样器接收的第一输入信号进行采样。 确定第一输入信号的振幅是否落在在第一预定电压电平和第二预定电压电平之间限定的范围内。 如果第一输入信号的振幅超出该范围，则抽头系数被更新以产生被反馈的更新抽头系数，以调整在判决反馈均衡器的输入端接收的第二输入信号的幅度。 如果第一输入信号的振幅落在该范围内，则抽头系数不被更新。

公开(公告)号：US08664622B2

公开(公告)日：2014-03-04

申请号：US13443994

申请日：2012-04-11

Applicant: Chih-Hong Hwang ,  Chun-Lin Chang ,  Chi-Ming Yang ,  Chin-Hsiang Lin ,  Wen-Yu Ku

Inventor： Chih-Hong Hwang ,  Chun-Lin Chang ,  Chi-Ming Yang ,  Chin-Hsiang Lin ,  Wen-Yu Ku

IPC: H01J27/00 ,  A61N5/00 ,  G21G5/00

CPC classification number: C23C14/48 ,  H01J27/08 ,  H01J37/08 ,  H01J2237/082 ,  H01J2237/31701

Abstract: An apparatus comprises an ionization chamber for providing ions during a process of ion implantation, and an electron beam source device inside the ionization chamber. The electron beam source device comprises a field emission array having a plurality of emitters for generating electrons in vacuum under an electric field.

Abstract translation: 一种装置包括用于在离子注入过程中提供离子的电离室和电离室内的电子束源装置。 电子束源装置包括具有多个用于在电场下在真空中产生电子的发射器的场致发射阵列。

公开(公告)号：US08652653B2

公开(公告)日：2014-02-18

申请号：US13001577

申请日：2009-06-30

Applicant: Chun Lin ,  Bin Ma ,  Chuanjun Xia ,  Yonggang Wu ,  Raymond Kwong

Inventor： Chun Lin ,  Bin Ma ,  Chuanjun Xia ,  Yonggang Wu ,  Raymond Kwong

IPC: H01L51/54

CPC classification number: C09K11/06 ,  C07D333/76 ,  C07D495/04 ,  C07D519/00 ,  C09K2211/1007 ,  C09K2211/1011 ,  C09K2211/1014 ,  C09K2211/1018 ,  C09K2211/1092 ,  H01L51/0037 ,  H01L51/004 ,  H01L51/0052 ,  H01L51/0059 ,  H01L51/006 ,  H01L51/0061 ,  H01L51/0071 ,  H01L51/0074 ,  H01L51/0078 ,  H01L51/0085 ,  H01L51/0086 ,  H01L51/0087 ,  H01L51/0088 ,  H01L51/5048

Abstract: Novel materials are provided, having a single phenyl or a chain of phenyls where there is a nitrogen atom on each end of the single phenyl or chain of phenyls. The nitrogen atom may be further substituted with particular thiophene, benzothiophene, and triphenylene groups. Organic light-emitting devices are also provided, where the novel materials are used as a hole transport material in the device. Combinations of the hole transport material with specific host materials are also provided.

Abstract translation: 提供了新的材料，其具有单个苯基或苯基链，其中在单个苯基或苯基链的每个端部上都有氮原子。 氮原子可以被特定的噻吩，苯并噻吩和三亚苯基进一步取代。 还提供了有机发光装置，其中新型材料用作装置中的空穴传输材料。 还提供了空穴传输材料与特定主体材料的组合。

公开(公告)号：US08632199B2

公开(公告)日：2014-01-21

申请号：US12550337

申请日：2009-08-28

Applicant: Wen-Yung Yeh ,  Jui-Ying Lin ,  Yu-Chen Yu ,  Ming-Te Lin ,  Yu-Chun Lin ,  Ta-Wei Chien

Inventor： Wen-Yung Yeh ,  Jui-Ying Lin ,  Yu-Chen Yu ,  Ming-Te Lin ,  Yu-Chun Lin ,  Ta-Wei Chien

IPC: F21V33/00

CPC classification number: F21S6/003 ,  A47G29/10 ,  A61L9/12 ,  F21S8/035 ,  F21Y2115/10 ,  Y10T307/951

Abstract: A lamp apparatus include a lamp body, at least an alternating current light-emitting diode and a plug. The alternating current light-emitting diode is disposed on a lamp body. The plug is electrically connected to the alternating current light-emitting diode. In lamp apparatuses utilizing AC LED, heat generated thereby is almost concentrated on chips. Compared with conventional lamp apparatuses utilizing DC LEDs, heat generated thereby is distributed on chips and outer rectifier. In lamp apparatuses utilizing AC LEDs, heat generated thereby is almost concentrated on chips because AC LEDs operate directly with AC electric power, omitting a rectifier and preventing power loss during operation of power rectification. Therefore, the heat accumulated on the chips of the AC LEDs is enough to be used to evaporate essential oil. In another embodiment, the invention utilizes low-resistance pure water surrounding the AC LED to dissipate its heat.

Abstract translation: 一种灯具包括：灯体，至少一个交流发光二极管和一个插头。 交流发光二极管配置在灯体上。 插头电连接到交流发光二极管。 在使用AC LED的灯具中，由此产生的热几乎集中在芯片上。 与使用DC LED的传统灯具相比，由此产生的热量分布在芯片和外部整流器上。 在使用AC LED的灯具中，由于AC LED直接用AC电力进行动作，省略整流器并且防止功率整流运转时的功率损耗，因此产生的热量几乎集中在芯片上。 因此，积聚在AC LED的芯片上的热量足以用于蒸发精油。 在另一个实施例中，本发明利用围绕AC LED的低电阻纯水来散热。

公开(公告)号：US08624322B1

公开(公告)日：2014-01-07

申请号：US13551262

申请日：2012-07-17

Applicant: Ru-Yi Su ,  Fu-Chih Yang ,  Chun Lin Tsai ,  Ker Hsiao Huo ,  Jen-Hao Yeh ,  Chun-Wei Hsu

Inventor： Ru-Yi Su ,  Fu-Chih Yang ,  Chun Lin Tsai ,  Ker Hsiao Huo ,  Jen-Hao Yeh ,  Chun-Wei Hsu

IPC: H01L23/62 ,  H01L21/8234

CPC classification number: H01L27/0629

Abstract: Provided is a high voltage semiconductor device. The high voltage semiconductor device includes a transistor having a gate, a source, and a drain. The source and the drain are formed in a doped substrate and are separated by a drift region of the substrate. The gate is formed over the drift region and between the source and the drain. The transistor is configured to handle high voltage conditions that are at least a few hundred volts. The high voltage semiconductor device includes a dielectric structure formed between the source and the drain of the transistor. The dielectric structure protrudes into and out of the substrate. Different parts of the dielectric structure have uneven thicknesses. The high voltage semiconductor device includes a resistor formed over the dielectric structure. The resistor has a plurality of winding segments that are substantially evenly spaced apart.

Abstract translation: 提供高压半导体器件。 高电压半导体器件包括具有栅极，源极和漏极的晶体管。 源极和漏极形成在掺杂衬底中并且由衬底的漂移区域分离。 栅极形成在漂移区域上以及源极和漏极之间。 晶体管被配置为处理至少几百伏特的高电压条件。 高电压半导体器件包括在晶体管的源极和漏极之间形成的电介质结构。 电介质结构突出进出基板。 电介质结构的不同部分具有不均匀的厚度。 高电压半导体器件包括在电介质结构上形成的电阻器。 电阻器具有大致均匀间隔开的多个绕组段。

公开(公告)号：US20130313617A1

公开(公告)日：2013-11-28

申请号：US13481462

申请日：2012-05-25

Applicant: Jen-Hao Yeh ,  Chih-Chang Cheng ,  Ru-Yi Su ,  Ker Hsiao Huo ,  Po-Chih Chen ,  Fu-Chih Yang ,  Chun Lin Tsai

Inventor： Jen-Hao Yeh ,  Chih-Chang Cheng ,  Ru-Yi Su ,  Ker Hsiao Huo ,  Po-Chih Chen ,  Fu-Chih Yang ,  Chun Lin Tsai

IPC: H01L29/80

CPC classification number: H01L29/7832 ,  H01L29/0692 ,  H01L29/404 ,  H01L29/41758 ,  H01L29/42356 ,  H01L29/66893 ,  H01L29/66901 ,  H01L29/808 ,  H03K17/223

Abstract: A device includes a buried well region and a first HVW region of the first conductivity, and an insulation region over the first HVW region. A drain region of the first conductivity type is disposed on a first side of the insulation region and in a top surface region of the first HVW region. A first well region and a second well region of a second conductivity type opposite the first conductivity type are on the second side of the insulation region. A second HVW region of the first conductivity type is disposed between the first and the second well regions, wherein the second HVW region is connected to the buried well region. A source region of the first conductivity type is in a top surface region of the second HVW region, wherein the source region, the drain region, and the buried well region form a JFET.

Abstract translation: 一种器件包括掩埋阱区和第一导电性的第一HVW区，以及位于第一HVW区上的绝缘区。 第一导电类型的漏极区域设置在绝缘区域的第一侧和第一HVW区域的顶表面区域中。 与第一导电类型相反的第二导电类型的第一阱区和第二阱区在绝缘区的第二侧上。 第一导电类型的第二HVW区域设置在第一和第二阱区域之间，其中第二HVW区域连接到掩埋阱区域。 第一导电类型的源极区域位于第二HVW区域的顶表面区域中，其中源极区域，漏极区域和掩埋阱区域形成JFET。

公开(公告)号：US08586204B2

公开(公告)日：2013-11-19

申请号：US12869284

申请日：2010-08-26

Applicant: Chuanjun Xia ,  Walter Yeager ,  Bin Ma ,  Scott Beers ,  Jui-Yi Tsai ,  James Fiordeliso ,  Edward Barron ,  Chun Lin

Inventor： Chuanjun Xia ,  Walter Yeager ,  Bin Ma ,  Scott Beers ,  Jui-Yi Tsai ,  James Fiordeliso ,  Edward Barron ,  Chun Lin

IPC: H01L51/54 ,  C09K11/06

CPC classification number: H01L51/0085 ,  C07F15/0033 ,  C09K11/06 ,  C09K2211/1007 ,  C09K2211/1029 ,  C09K2211/1044 ,  C09K2211/1088 ,  C09K2211/185 ,  H01L51/0072 ,  H01L51/0074 ,  H01L51/0081 ,  H01L51/5016 ,  H01L2251/308 ,  H05B33/14

Abstract: Devices containing a particular combination of organic compounds are provided. In particular, the devices contain twisted aryl compounds having extended conjugation (i.e., the twisted aryl is substituted with an additional aryl group) in combination with dibenzothiophene or dibenzofuran containing host materials. The organic light emitting devices may provide improved stability color, lifetime and manufacturing. Compounds containing a twisted aryl having extended conjugation are also provided.

Abstract translation: 提供了含有特定组合的有机化合物的装置。 特别地，这些装置包含与二苯并噻吩或含二苯并呋喃的主体材料组合的具有延伸共轭（即扭转的芳基被另外的芳基取代）的扭曲的芳基化合物。 有机发光器件可以提供改进的稳定性颜色，寿命和制造。 还提供了含有延伸共轭的扭曲芳基的化合物。

公开(公告)号：US08576278B2

公开(公告)日：2013-11-05

申请号：US12687826

申请日：2010-01-14

Applicant: Shih-Ming Wang ,  Chia-You Chung ,  Chih-Chun Lin

Inventor： Shih-Ming Wang ,  Chia-You Chung ,  Chih-Chun Lin

IPC: H04N7/18

CPC classification number: G06T7/0004 ,  G06T2207/10024 ,  G06T2207/20056 ,  G06T2207/30164

Abstract: The present invention discloses a system for monitoring dynamic stability of micro machine is provided in this invention, wherein an image-capturing device and an analytic device are included. The image-capturing device captures an image on a surface of a work piece milled by the micro machine. The analytic device comprises an image input interface, means for gray-scaling an image, means for analyzing abnormal gray-scaled value of the gray-scaled image, and means for analyzing numbers of veins of the gray-scaled image. This invention also provides a method for monitoring dynamic stability of micro machine.

Abstract translation: 本发明公开了一种在本发明中提供的用于监视微机动态稳定性的系统，其中包括图像捕获装置和分析装置。 图像捕获装置捕获由微型机器研磨的工件的表面上的图像。 分析装置包括图像输入接口，用于灰度图像的装置，用于分析灰度图像的异常灰度值的装置，以及用于分析灰度图像的静脉数量的装置。 本发明还提供了一种监测微机动态稳定性的方法。

公开(公告)号：US20130287287A1

公开(公告)日：2013-10-31

申请号：US13455584

申请日：2012-04-25

Applicant: Mei-Chun Lin ,  Ching-Fang Yu ,  Ting-Hao Hsu ,  Sheng-Chi Chin

Inventor： Mei-Chun Lin ,  Ching-Fang Yu ,  Ting-Hao Hsu ,  Sheng-Chi Chin

IPC: G06K9/00

CPC classification number: G06T7/001 ,  G06K9/48 ,  G06T2207/10061 ,  G06T2207/20224 ,  G06T2207/30148

Abstract: A method of identifying defects including producing, with an imaging system, an original image of a fabricated article having a feature thereon, the feature having an intended height and extracting a contour image from the original image, the contour image having an outline of those portions of the feature having a height approximate to the intended height. The method also includes producing a simulated image of the article based upon the contour and creating a defect image based on the differences between the simulated image and the original image, the defect image including any portions of the feature having a height less than the intended height.

Abstract translation: 一种识别缺陷的方法，包括用成像系统制造具有其特征的制品的原始图像，该特征具有预期高度并从原始图像提取轮廓图像，轮廓图像具有这些部分的轮廓 的特征具有近似于预期高度的高度。 该方法还包括基于轮廓产生物品的模拟图像，并且基于模拟图像和原始图像之间的差异创建缺陷图像，缺陷图像包括高度小于预期高度的特征的任何部分 。