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公开(公告)号：US20060226911A1
公开(公告)日：2006-10-12
申请号：US11397620
申请日：2006-04-05
Applicant: Chi-Hung Kao , Chih-Wei Chen , Cheng-Min Lin , Yun-Shan Chang , Shyh-Chyi Wong
Inventor： Chi-Hung Kao , Chih-Wei Chen , Cheng-Min Lin , Yun-Shan Chang , Shyh-Chyi Wong
IPC: H03F3/04
CPC classification number: H03F1/301 , H03F1/302 , H03F3/04 , H03F3/189 , H03F2200/372 , H03F2200/391
Abstract: A linearized bias circuit with adaptation resolves the problem happening to the power amplifier with conventional bias circuit that the DC and AC characteristics of the power amplifier shift or even deteriorate due to a temperature variation. The linearized bias circuit with adaptation has a reference voltage source, a first voltage source, a first resistor, a second resistor, a first NPN transistor, a second NPN transistor, and a third NPN transistor. The present invention has the characteristics of bias current temperature compensation, gain and phase compensations to achieve high linearity for the conventional power amplifier and reducing the DC consumption power. At the same time, the quantity of the required elements and layout area in the present invention are small so that the design complexity can be reduced for improving yield, reducing IC layout area, and reducing cost.
Abstract translation: 具有适应性的线性化偏置电路利用常规偏置电路解决功率放大器发生的问题，功率放大器的DC和AC特性由于温度变化而偏移甚至劣化。 具有自适应的线性化偏置电路具有参考电压源，第一电压源，第一电阻器，第二电阻器，第一NPN晶体管，第二NPN晶体管和第三NPN晶体管。 本发明具有偏置电流温度补偿，增益和相位补偿的特点，可实现传统功率放大器的高线性度，降低直流消耗功率。 同时，本发明所需元件的数量和布局面积很小，从而可以降低设计复杂度，从而提高产量，降低IC布局面积，降低成本。
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公开(公告)号：US20250141081A1
公开(公告)日：2025-05-01
申请号：US18914237
申请日：2024-10-13
Applicant: RichWave Technology Corp.
Inventor： Chang-Yi Chen , Chih-Sheng Chen
IPC: H01P5/18
Abstract: A directional coupler includes a main path, a coupling path, a first port, and a second port. The main path is used to propagate a first RF signal. The coupling path at least partially overlaps with the main path. The coupling path includes a first end, a second end, and at least one winding routed between the first end and the second end. The first port is coupled to the first end of the coupling path. The second port is coupled to the second end of the coupling path. At least one of the first port and the second port is located inside the at least one winding.
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公开(公告)号：US12289089B2
公开(公告)日：2025-04-29
申请号：US17849698
申请日：2022-06-26
Applicant: RichWave Technology Corp.
Inventor： Chin-Chia Chang , Shih-Meng Lin , Shih-Che Chen
Abstract: An acoustic wave device includes a piezoelectric substrate and a transducer. The piezoelectric substrate has a surface. The transducer is disposed on the surface. The transducer includes a first electrode, a second electrode, and at least one protrusion. The first electrode extends along a first direction and has a first end. The second electrode extends along the first direction and has a second end. The first electrode and the second electrode are spaced apart from each other along a second direction. The at least one protrusion is disposed at the first end of the first electrode. The at least one protrusion extends along the first direction and partially obstruct the first end.
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公开(公告)号：US20250132744A1
公开(公告)日：2025-04-24
申请号：US18510669
申请日：2023-11-16
Applicant: RichWave Technology Corp.
Inventor： Hao-Min Huang
Abstract: An acoustic wave device and a fabricating method are provided. The acoustic wave device includes a substrate, a first frame, a first electrode, a piezoelectric layer and a second electrode. The substrate includes a first surface and a second surface opposite thereto. A reflector recess and a first recess may be depressed from the first surface. The first recess may at least partially surround the reflector recess, and may be separated from the reflector recess. The first frame is disposed in the first recess of the substrate. The first electrode is disposed on the substrate and contacts the first frame. The piezoelectric layer is disposed at least on the first electrode. The second electrode is disposed at least on the piezoelectric layer. The reflector recess of the substrate, the first electrode, the piezoelectric layer, and the second electrode at least partially overlap along a vertical direction.
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公开(公告)号：US20250125773A1
公开(公告)日：2025-04-17
申请号：US18393725
申请日：2023-12-22
Applicant: RichWave Technology Corp.
Inventor： Po-Hsiang Yang
Abstract: A radio frequency circuit includes an amplifier circuit and a bias circuit. The amplifier circuit is configured to receive a bias signal and amplify a radio frequency signal. The bias circuit is coupled to the amplifier circuit, and is configured to provide the bias signal. The bias circuit includes a transistor and a resistor. The transistor is arranged near the amplifier circuit. The resistor is arranged near the amplifier circuit, and a first terminal of the resistor is coupled to a transmission line, and a second terminal of the resistor is coupled to a control terminal of the transistor. An interference signal is coupled to the transmission line. The resistor is located between the transistor and the transmission line.
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Patent Agency Ranking
公开(公告)号：US20250118708A1
公开(公告)日：2025-04-10
申请号：US18533175
申请日：2023-12-08
Applicant: RichWave Technology Corp.
Inventor： Kuang-Lieh Wan
IPC: H01L25/065 , H01L23/00 , H01L23/66 , H03H7/38
Abstract: A front-end circuit and a semi-conductor device are provided. The front-end circuit includes an amplifying circuit, a switching circuit, a coupler and at least one bonding wire. The amplifying circuit has a first end for receiving a radio-frequency signal to be amplified. The switching circuit has a first end coupled to a second end of the amplifying circuit. The coupler has a first coupling element and a second coupling element arranged adjacently. A first end of the first coupling element is coupled to a second end of the switching circuit. A second end of the first coupling element is coupled to a signal transmission end. The bonding wire has a first end coupled to the first end of the first coupling element, and a second end of the bonding wire is coupled to the second end of the first coupling element.
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公开(公告)号：US12125760B2
公开(公告)日：2024-10-22
申请号：US18113062
申请日：2023-02-23
Applicant: RichWave Technology Corp.
Inventor： Yu-Lung Wen
CPC classification number: H01L23/3121 , H01L24/16 , H01L24/26 , H01L24/81 , H01L2224/16227 , H01L2224/26145 , H01L2224/81815
Abstract: A method of manufacturing an electronic package structure is disclosed. A solder mask layer is formed on an upper surface of a substrate. A recessed area is formed in the solder mask layer. An electronic component is mounted on the substrate. Pads are disposed on the upper surface of the substrate. The pads respectively correspond to the bumps on a first surface of the electronic component. The pads are electrically connected to the bumps. A heat treatment is performed to make the first surface close to the substrate and form a cavity in the recessed area. The cavity is between the first surface of the electronic component, the solder mask layer and the upper surface of the substrate.
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公开(公告)号：US12113300B2
公开(公告)日：2024-10-08
申请号：US17519584
申请日：2021-11-05
Applicant: RichWave Technology Corp.
Inventor： Shih-Kai Lin
CPC classification number: H01Q5/35 , G01S7/032 , G01S13/46 , H01Q1/38 , H01Q9/0414 , H01Q21/065 , G01S2013/466
Abstract: A Doppler motion sensor device is used for detecting a motion of an object. The Doppler motion sensor device includes a first antenna and a second antenna. The first antenna is used to transmit or receive a first wireless signal. The second antenna is used to transmit or receive a second wireless signal. A first straight line passing through a first feed-in point and a first middle point of the first antenna is orthogonal to a second straight line passing through a second feed-in point and a second middle point of the second antenna. One of the first wireless signal and the second wireless signal is a transmission signal. The transmission signal is reflected by the object to form the other one of the first wireless signal and the second wireless signal.
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公开(公告)号：US12107572B2
公开(公告)日：2024-10-01
申请号：US18091343
申请日：2022-12-29
Applicant: RichWave Technology Corp.
Inventor： Chih-Sheng Chen , Hsien-Huang Tsai , Meng-Lun Li
CPC classification number: H03K17/102 , H03K2217/0054
Abstract: A switch device includes a first switch unit, a second switch unit, a first sub-switch unit, a second sub-switch unit, a first resistor and a second resistor. The first switch unit is coupled to a radio-frequency terminal and coupled to the second switch unit in cascode. The first sub-switch unit is coupled to the second sub-switch unit in cascode. The first sub-switch unit is further coupled between control terminals of the first switch unit and the second switch unit. The first sub-switch unit is further coupled to a node between the first resistor and the first switch unit. The second sub-switch unit is further coupled to a node between the second resistor and the second switch unit. When the first switch unit and the second switch unit are transitioned, the first sub-switch unit and the second sub-switch unit can be turned on to discharge and/or neutralize accumulated charges.
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230.发明授权公开(公告)号：US12094921B2
公开(公告)日：2024-09-17
申请号：US17408485
申请日：2021-08-23
Applicant: RichWave Technology Corp.
Inventor： Chia-Wie Chang
IPC: H01L21/768 , H01L21/66 , H01L23/48 , H01L23/522 , H01L23/64 , H01L27/06 , H01L49/02
CPC classification number: H01L28/10 , H01L21/76898 , H01L22/12 , H01L23/481 , H01L27/0688
Abstract: A semiconductor device includes a compound substrate, at least one front side pattern, at least one backside pattern and at least one through-wafer via structure. The compound substrate includes a front side and a backside. The at least one front side pattern is arranged on the front side of the compound substrate. The at least one backside pattern is arranged on the backside of the compound substrate. The least one through-wafer via structure penetrates the compound substrate from the front side to the backside. The at least one front side pattern, the at least one backside pattern and the at least one through-wafer form a three-dimensional inductor structure.
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