Method for making conjugated polymer
    231.
    发明授权
    Method for making conjugated polymer 有权
    共轭聚合物的制备方法

    公开(公告)号:US08273829B2

    公开(公告)日:2012-09-25

    申请号:US13051123

    申请日:2011-03-18

    Abstract: The present disclosure relates to a method for making a conjugated polymer. In the method, polyacrylonitrile, a solvent, and a catalyst are provided. The polyacrylonitrile is dissolved in the solvent to form a polyacrylonitrile solution. The catalyst is uniformly dispersed into the polyacrylonitrile solution. The polyacrylonitrile solution with the catalyst is heated to induce a cyclizing reaction of the polyacrylonitrile, thereby forming a conjugated polymer solution with conjugated polymer.

    Abstract translation: 本发明涉及制备共轭聚合物的方法。 在该方法中,提供聚丙烯腈,溶剂和催化剂。 将聚丙烯腈溶解在溶剂中以形成聚丙烯腈溶液。 催化剂均匀分散在聚丙烯腈溶液中。 将具有催化剂的聚丙烯腈溶液加热以引起聚丙烯腈的环化反应,从而与共轭聚合物形成共轭聚合物溶液。

    LABEL ANTI-COLLISION METHOD AND SYSTEM
    234.
    发明申请
    LABEL ANTI-COLLISION METHOD AND SYSTEM 审中-公开
    标签防碰撞方法和系统

    公开(公告)号:US20120075075A1

    公开(公告)日:2012-03-29

    申请号:US13375540

    申请日:2009-12-28

    CPC classification number: G06K7/0008 G06K7/10049 G06K7/10059

    Abstract: A label anti-collision method is disclosed, which is applied in a radio frequency identification system including a reader and labels. When the labels enter into an arbitration process, the reader sends the predetermined number of labels to the labels; the reader sends start counting instruction; after a label receives the start counting instruction, the label initializes its own information, and according to the predetermined number of the labels, selects a random number as an initial value of a counter and enters into the arbitration process. A label anti-collision system is also disclosed. With the method and the system, all the labels are hashed at the beginning of arbitrating with the Binary Tree method so as to reduce the probability of the collisions and improve the arbitration efficiency.

    Abstract translation: 公开了一种应用于包括读取器和标签的射频识别系统的标签防碰撞方法。 当标签进入仲裁过程时,读者将预定数量的标签发送到标签; 读者发送开始计数指令; 在标签接收到开始计数指令之后,标签初始化其自己的信息,并且根据预定数量的标签,选择随机数作为计数器的初始值并进入仲裁处理。 还公开了一种标签防碰撞系统。 利用方法和系统,所有标签在二进制树法的仲裁开始时被散列,以减少冲突的可能性并提高仲裁效率。

    BARRIER STRUCTURES AND METHODS OF FORMING SAME TO FACILITATE SILICON CARBIDE EPITAXY AND SILICON CARBIDE-BASED MEMORY FABRICATION
    235.
    发明申请
    BARRIER STRUCTURES AND METHODS OF FORMING SAME TO FACILITATE SILICON CARBIDE EPITAXY AND SILICON CARBIDE-BASED MEMORY FABRICATION 审中-公开
    阻挡层结构及其形成方法来制备碳化硅外壳和基于碳化硅的记忆体制造

    公开(公告)号:US20120056194A1

    公开(公告)日:2012-03-08

    申请号:US12876028

    申请日:2010-09-03

    Abstract: Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, wafers and methods to form barrier structures to facilitate formation of silicon carbide epitaxy on a substrate, such as a silicon-based substrate, for fabricating various silicon carbide-based semiconductor devices, including silicon carbide-based memory elements and cells. In some embodiments, a semiconductor wafer includes a silicon substrate, a barrier-seed layer disposed over the silicon substrate, and a silicon carbide layer formed over the barrier-seed layer. The semiconductor wafer can be used to form a variety of SiC-based semiconductor devices. In one embodiment, a silicon carbide-based memory element is formed to include barrier-seed layer, multiple silicon carbide layers formed over the barrier-seed layer, and a dielectric layer formed over the multiple silicon carbide layers.

    Abstract translation: 本发明的实施例一般涉及半导体和半导体制造技术,更具体地,涉及用于形成阻挡结构以便于在诸如硅基底层之类的衬底上形成碳化硅外延的器件,集成电路,衬底,晶片和方法 ,用于制造各种基于碳化硅的存储元件和电池的基于碳化硅的半导体器件。 在一些实施例中,半导体晶片包括硅衬底,设置在硅衬底上的阻挡种子层和形成在阻挡种子层上的碳化硅层。 半导体晶片可用于形成各种SiC基半导体器件。 在一个实施例中,形成基于碳化硅的存储元件以包括阻挡种子层,在阻挡种子层上形成的多个碳化硅层以及形成在多个碳化硅层上的电介质层。

    Transdermal patch containing isosorbide dinitrate and bisoprolol
    236.
    发明授权
    Transdermal patch containing isosorbide dinitrate and bisoprolol 有权
    透皮贴剂含有硝酸异山梨酯和比索洛尔

    公开(公告)号:US08071125B2

    公开(公告)日:2011-12-06

    申请号:US12096545

    申请日:2005-12-09

    CPC classification number: A61K9/7061 A61K31/138 A61K31/724

    Abstract: This invention relates to a transdermal patch in the form of a layer complex, comprising a backing layer, a drug-reservoir layer comprising pharmacologically active ingredients and pharmaceutically acceptable adjuvants, and a release liner covering the drug-reservoir layer, characterized in that the drug-reservoir layer comprises isosorbide dinitrate and Bisoprolol at a ratio of 1:3 to 3:1 by weight, as the pharmacologically active ingredients. Animal tests show that said patch can reduce the elevation of T wave of cardiogram, the increase of the level of myocardial enzyme in blood serum, and the extension of the range of myocardial infarction caused by ligating the coronary artery in animals. Results show that said patch exhibits a considerable synergistic effect in the treatment of cardiovascular diseases and has good preventive and therapeutic effects on several adverse events on heart. In addition, the animal tests show that the patch according to the invention has a better pressure-reducing effect than the application of the patch containing only one of isosorbide dinitrate and Bisoprolol, and does not worsen the arrhythmia that is easily caused by the application of the patch containing only isosorbide dinitrate or Bisoprolol.

    Abstract translation: 本发明涉及层复合物形式的透皮贴剂,其包含背衬层,包含药理活性成分和药学上可接受的佐剂的药物储库层,以及覆盖药物储库层的释放衬垫,其特征在于药物 作为药理活性成分,含有硝酸异山梨酯和比索洛尔,比例为1:3〜3:1。 动物试验表明,所述贴片可以降低心电图T波的升高,血清中心肌酶水平的升高,以及通过在动物中连接冠状动脉引起的心肌梗塞范围的延长。 结果表明,所述贴片在治疗心血管疾病方面具有相当大的协同效应,对心脏上的几种不良事件具有良好的预防和治疗作用。 此外,动物试验表明,根据本发明的贴剂具有比仅含有硝酸异山梨酯和比洛维罗之一的贴剂的施用更好的减压效果,并且不会使应用容易引起的心律失常恶化 该补丁仅含有硝酸异山梨酯或比索洛尔。

    Gallium nitride light-emitting device with ultra-high reverse breakdown voltage
    237.
    发明授权
    Gallium nitride light-emitting device with ultra-high reverse breakdown voltage 有权
    具有超高反向击穿电压的氮化镓发光器件

    公开(公告)号:US08053757B2

    公开(公告)日:2011-11-08

    申请号:US12159850

    申请日:2007-08-31

    CPC classification number: H01L21/0254 H01L21/02576 H01L21/0262 H01L33/007

    Abstract: One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH3) as the nitrogen source prior to growing the active layer and the p-type layer. The flow rate ratio between group V and group III elements is gradually reduced from an initial value to a final value. The GaN-based LED exhibits a reverse breakdown voltage equal to or greater than 60 volts.

    Abstract translation: 本发明的一个实施例提供了一种包含n型GaN基半导体层(n型层)的基于氮化镓(GaN)的半导体发光器件(LED)。 活性层 和p型GaN类半导体层(p型层)。 在生长活性层和p型层之前,通过使用氨气(NH 3)作为氮源,外延生长n型层。 V组和III组元件之间的流量比从初始值逐渐减小到最终值。 GaN基LED呈现等于或大于60伏的反向击穿电压。

    Selecting An Installation Rack For A Device In A Data Center
    238.
    发明申请
    Selecting An Installation Rack For A Device In A Data Center 审中-公开
    在数据中心中为设备选择安装机架

    公开(公告)号:US20110213735A1

    公开(公告)日:2011-09-01

    申请号:US13032963

    申请日:2011-02-23

    CPC classification number: H05K7/1498 G06F1/20 G06F1/26 G06Q99/00 H05K7/20836

    Abstract: Selecting an installation rack for a device in a data center including obtaining physical size and power of the device; judging, according to the physical size and power of the device, whether rack space, rack total power, and rack unit power density of a rack in the data center satisfy predetermined requirement after the device is added into the rack; and selecting a rack that satisfies the predetermined requirement as an installation rack.

    Abstract translation: 选择数据中心设备的安装架,包括获取设备的物理尺寸和功率; 根据设备的物理尺寸和功率,将设备添加到机架中后,数据中心机架的机架空间,机架总功率和机架单元功率密度是否满足预定要求; 并且选择满足预定要求的机架作为安装架。

    DIHYDROPYRIDINE CALCIUM ANTAGONIST COMPOUNDS, PREPARATION METHODS, AND MEDICAL USES THEREOF
    239.
    发明申请
    DIHYDROPYRIDINE CALCIUM ANTAGONIST COMPOUNDS, PREPARATION METHODS, AND MEDICAL USES THEREOF 有权
    二羟基喹啉钙拮抗剂化合物,其制备方法及其医疗用途

    公开(公告)号:US20110201811A1

    公开(公告)日:2011-08-18

    申请号:US12863593

    申请日:2009-01-05

    CPC classification number: C07D211/90

    Abstract: A dihydropyridine (DHP) calcium antagonist compound and its preparation method and medical use are related to preparation methods of compounds of general formulas (I) and (II) as shown below and their pharmaceutical salts and applications for treating cardiovascular diseases, and R1 represents a substituted or unsubstituted heterocyclic, aromatic ring or aralkyl group, and the substituent may be C1-C4 alkyl, C1-C4 alkoxyl, halogen, cyano, trifluoromethyl, trifluoromethoxyl, methylthio, nitro, amino or hydroxyl group; R2 represents a C1-C8 alkyl group; R3 and R4 are the same or different, and each represents a hydrogen, halogen, cyano, trifluoromethyl, trifluoromethoxyl, methylthio, nitro or amino group or a C1-C4 alkyl, C1-C4 alkoxyl, C1-C4 alkenyl, or C1-C4 alkinyl group; R5 and R6 are the same or different, and each represents a C1-C4 alkyl group; X represents O, S or a single bond; m=0-6, n=1-6, and m and n are the same or different.

    Abstract translation: 二氢吡啶(DHP)钙拮抗剂化合物及其制备方法和医疗用途与下列通式(I)和(II)化合物的制备方法及其药物盐和治疗心血管疾病的应用有关,R1代表 取代或未取代的杂环,芳环或芳烷基,取代基可以是C 1 -C 4烷基,C 1 -C 4烷氧基,卤素,氰基,三氟甲基,三氟甲氧基,甲硫基,硝基,氨基或羟基。 R2表示C1-C8烷基; R 3和R 4相同或不同,各自表示氢,卤素,氰基,三氟甲基,三氟甲氧基,甲硫基,硝基或氨基或C 1 -C 4烷基,C 1 -C 4烷氧基,C 1 -C 4烯基或C 1 -C 4 炔基; R5和R6相同或不同,各自表示C1-C4烷基; X表示O,S或单键; m = 0-6,n = 1-6,m和n相同或不同。

    Semiconductor light-emitting device with a highly reflective ohmic-electrode
    240.
    发明授权
    Semiconductor light-emitting device with a highly reflective ohmic-electrode 有权
    具有高反射欧姆电极的半导体发光器件

    公开(公告)号:US07977663B2

    公开(公告)日:2011-07-12

    申请号:US12160040

    申请日:2008-03-26

    CPC classification number: H01L33/0079 H01L33/405

    Abstract: A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer.

    Abstract translation: 半导体发光器件包括在导电衬底上的多层半导体结构。 多层半导体结构包括位于导电衬底之上的第一掺杂半导体层,位于第一掺杂半导体层之上的第二掺杂半导体层和/或位于第一和第二掺杂半导体层之间的MQW有源层。 该器件还包括在第一掺杂半导体层和导电衬底之间的反射欧姆接触金属层,其包括Ag和Ni,Ru,Rh,Pd,Au,Os,Ir和Pt中的至少一种; 加上Zn,Mg Be和Cd中的至少一种; 和多个:W,Cu,Fe,Ti,Ta和Cr。 该器件还包括在反射欧姆接触金属层和导电基底之间的结合层,耦合到导电基底的第一电极和耦合到第二掺杂半导体层的第二电极。

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