Abstract:
The present disclosure relates to a method for making a conjugated polymer. In the method, polyacrylonitrile, a solvent, and a catalyst are provided. The polyacrylonitrile is dissolved in the solvent to form a polyacrylonitrile solution. The catalyst is uniformly dispersed into the polyacrylonitrile solution. The polyacrylonitrile solution with the catalyst is heated to induce a cyclizing reaction of the polyacrylonitrile, thereby forming a conjugated polymer solution with conjugated polymer.
Abstract:
A method for stabilizing nitro compounds against discoloration. The method comprises reacting nitro compounds containing color-forming impurities with nitric acid, neutralizing and washing the product, and distilling therefrom purified nitro compounds.
Abstract:
A process for increasing the yield of ethylene and propylene, comprising:(1) feeding a feedstock into a reaction zone with a catalyst to produce (i) a product stream and a catalyst to be regenerated;(2) stripping and then dividing the catalyst to be regenerated into at least two parts, wherein a first part is recycled into the reaction zone at a first position, and a second part is regenerated in the regenerator to form a regenerated catalyst and then recycled into the reaction zone at a second position; and(3) controlling the temperature increase in the reaction zone.
Abstract:
A label anti-collision method is disclosed, which is applied in a radio frequency identification system including a reader and labels. When the labels enter into an arbitration process, the reader sends the predetermined number of labels to the labels; the reader sends start counting instruction; after a label receives the start counting instruction, the label initializes its own information, and according to the predetermined number of the labels, selects a random number as an initial value of a counter and enters into the arbitration process. A label anti-collision system is also disclosed. With the method and the system, all the labels are hashed at the beginning of arbitrating with the Binary Tree method so as to reduce the probability of the collisions and improve the arbitration efficiency.
Abstract:
Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, wafers and methods to form barrier structures to facilitate formation of silicon carbide epitaxy on a substrate, such as a silicon-based substrate, for fabricating various silicon carbide-based semiconductor devices, including silicon carbide-based memory elements and cells. In some embodiments, a semiconductor wafer includes a silicon substrate, a barrier-seed layer disposed over the silicon substrate, and a silicon carbide layer formed over the barrier-seed layer. The semiconductor wafer can be used to form a variety of SiC-based semiconductor devices. In one embodiment, a silicon carbide-based memory element is formed to include barrier-seed layer, multiple silicon carbide layers formed over the barrier-seed layer, and a dielectric layer formed over the multiple silicon carbide layers.
Abstract:
This invention relates to a transdermal patch in the form of a layer complex, comprising a backing layer, a drug-reservoir layer comprising pharmacologically active ingredients and pharmaceutically acceptable adjuvants, and a release liner covering the drug-reservoir layer, characterized in that the drug-reservoir layer comprises isosorbide dinitrate and Bisoprolol at a ratio of 1:3 to 3:1 by weight, as the pharmacologically active ingredients. Animal tests show that said patch can reduce the elevation of T wave of cardiogram, the increase of the level of myocardial enzyme in blood serum, and the extension of the range of myocardial infarction caused by ligating the coronary artery in animals. Results show that said patch exhibits a considerable synergistic effect in the treatment of cardiovascular diseases and has good preventive and therapeutic effects on several adverse events on heart. In addition, the animal tests show that the patch according to the invention has a better pressure-reducing effect than the application of the patch containing only one of isosorbide dinitrate and Bisoprolol, and does not worsen the arrhythmia that is easily caused by the application of the patch containing only isosorbide dinitrate or Bisoprolol.
Abstract:
One embodiment of the present invention provides a gallium nitride (GaN)-based semiconductor light-emitting device (LED) which includes an n-type GaN-based semiconductor layer (n-type layer); an active layer; and a p-type GaN-based semiconductor layer (p-type layer). The n-type layer is epitaxially grown by using ammonia gas (NH3) as the nitrogen source prior to growing the active layer and the p-type layer. The flow rate ratio between group V and group III elements is gradually reduced from an initial value to a final value. The GaN-based LED exhibits a reverse breakdown voltage equal to or greater than 60 volts.
Abstract:
Selecting an installation rack for a device in a data center including obtaining physical size and power of the device; judging, according to the physical size and power of the device, whether rack space, rack total power, and rack unit power density of a rack in the data center satisfy predetermined requirement after the device is added into the rack; and selecting a rack that satisfies the predetermined requirement as an installation rack.
Abstract:
A dihydropyridine (DHP) calcium antagonist compound and its preparation method and medical use are related to preparation methods of compounds of general formulas (I) and (II) as shown below and their pharmaceutical salts and applications for treating cardiovascular diseases, and R1 represents a substituted or unsubstituted heterocyclic, aromatic ring or aralkyl group, and the substituent may be C1-C4 alkyl, C1-C4 alkoxyl, halogen, cyano, trifluoromethyl, trifluoromethoxyl, methylthio, nitro, amino or hydroxyl group; R2 represents a C1-C8 alkyl group; R3 and R4 are the same or different, and each represents a hydrogen, halogen, cyano, trifluoromethyl, trifluoromethoxyl, methylthio, nitro or amino group or a C1-C4 alkyl, C1-C4 alkoxyl, C1-C4 alkenyl, or C1-C4 alkinyl group; R5 and R6 are the same or different, and each represents a C1-C4 alkyl group; X represents O, S or a single bond; m=0-6, n=1-6, and m and n are the same or different.
Abstract:
A semiconductor light-emitting device includes a multilayer semiconductor structure on a conductive substrate. The multilayer semiconductor structure includes a first doped semiconductor layer situated above the conductive substrate, a second doped semiconductor layer situated above the first doped semiconductor layer, and/or an MQW active layer situated between the first and second doped semiconductor layers. The device also includes a reflective ohmic-contact metal layer between the first doped semiconductor layer and the conductive substrate, which includes Ag, and at least one of: Ni, Ru, Rh, Pd, Au, Os, Ir, and Pt; plus at least one of: Zn, Mg Be, and Cd; and a number of: W, Cu, Fe, Ti, Ta, and Cr. The device further includes a bonding layer between the reflective ohmic-contact metal layer and the conductive substrate, a first electrode coupled to the conductive substrate, and a second electrode coupled to the second doped semiconductor layer.