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公开(公告)号:US09847349B1
公开(公告)日:2017-12-19
申请号:US15463493
申请日:2017-03-20
Applicant: STMicroelectronics SA
Inventor: Augustin Monroy Aguirre , Guillaume Bertrand , Philippe Cathelin , Raphael Paulin
CPC classification number: H01L27/1203 , H01L23/528 , H01L29/0649 , H01L29/0847 , H01L29/1079 , H01L29/1095 , H01L29/456 , H01L29/78615
Abstract: An integrated electronic device is supported by a substrate of a silicon on insulator type. At least one transistor is formed in and on a semiconductor film of the substrate. The transistor includes a drain region and a source region of a first conductivity type and a substrate (body) region of a second conductivity type lying under a gate region. An extension region laterally continues the substrate (body) region beyond the source and drain regions and borders, in contact with, the source region through a border region having the first conductivity type. This supports formation of an electrical connection of the source region and the substrate (body) region.
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公开(公告)号:US20170307468A1
公开(公告)日:2017-10-26
申请号:US15133614
申请日:2016-04-20
Applicant: STMICROELECTRONICS SA , STMICROELECTRONICS (CROLLES 2) SAS
Inventor: Jean-Francois CARPENTIER , Patrick LEMAITRE , Jean-Robert MANOUVRIER , Charles BAUDOT , Bertrand BOROT
CPC classification number: G01M11/02 , G01R31/2656 , G01R31/27 , G01R31/2884 , G01R31/303 , G01R31/311 , G01R31/31728 , G01R35/00 , G02B6/00 , G02B6/12004 , G02B6/2808 , G02B6/34
Abstract: A semiconductor device may include a semiconductor wafer, and a reference circuit carried by the semiconductor wafer. The reference circuit may include optical DUTs, a first set of photodetectors coupled to outputs of the optical DUTs, an optical splitter coupled to inputs of the optical DUTs, and a second set of photodetectors coupled to the optical splitter. The optical splitter is to be coupled to an optical source and configured to transmit a reference optical signal to the first set of photodetectors via the optical DUTs and the second set of photodetectors.
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243.
公开(公告)号:US20170294379A1
公开(公告)日:2017-10-12
申请号:US15093416
申请日:2016-04-07
Applicant: STMicroelectronics SA , STMicroelectronics (Crolles 2) SAS
Inventor: Didier Dutartre , Jean-Pierre Carrere , Jean-Luc Huguenin , Clement Pribat , Sarah Kuster
IPC: H01L23/522 , H01L23/532 , H01L21/768 , H01L21/8234 , H01L21/84 , H01L29/06 , H01L27/12
CPC classification number: H01L21/76877 , H01L21/02532 , H01L21/0262 , H01L21/7624 , H01L21/823475 , H01L21/84 , H01L27/1207 , H01L29/0649
Abstract: A silicon on insulator substrate includes a semiconductor bulk handle wafer, an insulating layer on said semiconductor bulk handle wafer and a semiconductor film on said insulating layer. An opening extends completely through the semiconductor film and insulating layer to expose a surface of the semiconductor bulk handle wafer. Epitaxial material fills the opening and extends on said semiconductor film, with the epitaxial material and semiconductor film forming a thick semiconductor film. A trench isolation surrounds a region of the thick semiconductor film to define an electrical contact made to the semiconductor bulk handle wafer through the opening.
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244.
公开(公告)号:US20170288781A1
公开(公告)日:2017-10-05
申请号:US15083616
申请日:2016-03-29
Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics SA
Inventor: Jean-Francois Carpentier , Patrick Lemaitre , Jean-Robert Manouvrier , Denis Pache , Stephane Le Tual
IPC: H04B10/516 , H04L25/49
CPC classification number: H04B10/541 , G02F1/0121 , G02F1/2257 , H04B10/505 , H04L25/4917
Abstract: An optical modulator includes an optical waveguide including at least a first PN junction phase shifter and a second PN junction phase shifter. A driver circuit drives operation of the first and second PN junction phase shifters in response to a pulse amplitude modulated (PAM) analog signal having 2n levels. The PAM analog signal is generated by a digital to analog converter that receives an n-bit input signal. In an implementation, the optical waveguide and PN junction phase shifters are formed on a first integrated circuit chip and the driver circuit is formed on a second integrated circuit chip that is stacked on and electrically connected to the first integrated circuit chip.
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公开(公告)号:US20170271392A1
公开(公告)日:2017-09-21
申请号:US15617748
申请日:2017-06-08
Applicant: STMicroelectronics SA
Inventor: Didier Dutartre
IPC: H01L27/146 , H01L21/762 , H01L27/12
CPC classification number: H01L27/14629 , H01L21/7624 , H01L21/76264 , H01L27/1203 , H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/1463 , H01L27/14643 , H01L27/14685 , H01L27/14689
Abstract: A front-side image sensor may include a substrate in a semiconductor material and an active layer in the semiconductor material. The front side image sensor may also include an array of photodiodes formed in the active layer and an insulating layer between the substrate and the active layer.
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公开(公告)号:US09726548B2
公开(公告)日:2017-08-08
申请号:US14925753
申请日:2015-10-28
Applicant: STMicroelectronics SA
Inventor: Hani Sherry , Andreia Cathelin , Andreas Kaiser , Ullrich Pfeiffer , Janusz Grzyb , Yan Zhao
CPC classification number: G01J5/22 , G01J5/10 , G01J5/20 , G01J2005/0077 , G01J2005/202 , G01N21/3581 , H01Q23/00 , Y10T29/49018
Abstract: A terahertz imager includes an array of pixel circuits. Each pixel circuit has an antenna and a detector. The detector is coupled to differential output terminals of the antenna. A frequency oscillator is configured to generate a frequency signal on an output line. The output line is coupled to an input terminal of the antenna of at least one of the pixel circuits.
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公开(公告)号:US20170194498A1
公开(公告)日:2017-07-06
申请号:US15387712
申请日:2016-12-22
Applicant: STMicroelectronics (Crolles 2) SAS , STMicroelectronics SA , Commissariat A L'Energie Atomique et aux Energies Alternatives
Inventor: Remy Berthelon , Didier Dutartre , Pierre Morin , Francois Andrieu , Elise Baylac
IPC: H01L29/78 , H01L21/762 , H01L29/66 , H01L21/02
CPC classification number: H01L29/7849 , H01L21/02236 , H01L21/02238 , H01L21/02255 , H01L21/02532 , H01L21/76281 , H01L21/76283 , H01L29/66477 , H01L29/66568 , H01L29/66628 , H01L29/66742 , H01L29/66772 , H01L29/7846 , H01L29/7848 , H01L29/78684
Abstract: A strained semiconductor layer is produced from a semiconductor layer extending on an insulating layer. A thermal oxidization is performed on the semiconductor layer across its entire thickness to form two bars extending in a direction of a transistor width. Insulating trenches are formed in a direction of a transistor length. A strain of the strained semiconductor layer is induced in one implementation before the thermal oxidation is performed. Alternatively, the strain is induced after the thermal oxidation is performed. The insulating trenches serve to release a component of the strain extending in the direction of transistor width. A component of the strain extending in the direction of transistor length is maintained. The bars and trenches delimit an active area of the transistor include source, drain and channel regions.
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公开(公告)号:US20170185863A1
公开(公告)日:2017-06-29
申请号:US14983150
申请日:2015-12-29
Inventor: Mahesh CHANDRA , Antoine DROUOT
IPC: G06K9/46
CPC classification number: G06T5/20 , G06K9/4604 , G06K9/4671 , G06K9/56 , G06T5/002 , G06T11/60 , G06T2207/10016
Abstract: Various embodiments provide an optimized image filter. The optimized image and video obtains an input image and selects a target pixel for modification. Difference values are then determined between the selected target pixel and each reference pixel of a search area. Subsequently, a weighting function is used to determine weight values for each of the reference pixels of the search area based on their respective difference value. The selected target pixel is then modified by the optimized image filter using the determined weight values. A new target pixel in an apply patch is then selected for modification. The new target pixel is modified using the previously determined weight values reassigned to a new set of reference pixels. The previously determined weight values are reassigned to the new set of reference pixels based on each of the new set of reference pixels' position relative to the new target pixel.
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公开(公告)号:US20170180644A1
公开(公告)日:2017-06-22
申请号:US15382013
申请日:2016-12-16
Applicant: STMicroelectronics SA
Inventor: Manu ALIBAY , Stéphane AUBERGER
CPC classification number: H04N5/23254 , G06T7/33 , G06T7/35 , G06T2207/20076 , H04N5/145 , H04N5/23267
Abstract: A method determines a movement of an apparatus between capturing first and second images. The method includes testing model hypotheses of the movement by for example a RANSAC algorithm, operating on a set of first points in the first image and assumed corresponding second points in the second image to deliver the best model hypothesis. The testing includes, for each first point, calculating a corresponding estimated point using the tested model hypothesis, determining the back-projection error between the estimated point and the second point in the second image, and comparing each back projection error with a threshold. The testing comprises for each first point, determining a correction term based on an estimation of the depth of the first point in the first image and an estimation of the movement between the first and second images, and determining the threshold associated with the first point by using said correction term.
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公开(公告)号:US20170178355A1
公开(公告)日:2017-06-22
申请号:US15381928
申请日:2016-12-16
Applicant: STMicroelectronics SA
Inventor: Manu ALIBAY , Stéphane AUBERGER , Bogdan-Florin STANCIULESCU
IPC: G06T7/70
CPC classification number: G06T7/70 , G06T7/73 , G06T2207/10016 , G06T2207/20076 , G06T2207/30196 , G06T2207/30244
Abstract: A method estimates an ego-motion of an apparatus between a first image and a second image of a succession of images captured by the apparatus, in a SLAM type algorithm containing a localization part including the ego-motion estimating and a mapping part. The ego-motion comprises a 3D rotation of the apparatus and a position variation of the apparatus in the 3D space, and the ego-motion estimating comprises performing a first part and performing a second part after having performed the first part, the first part including estimating the 3D rotation of the apparatus and the second part including, the 3D rotation having been estimated, estimating the position variation of the apparatus in the 3D space.
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