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    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS
    251.
    发明申请
    SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS 有权

    公开(公告)号：US20210351031A1

    公开(公告)日：2021-11-11

    申请号：US17370263

    申请日：2021-07-08

    Applicant: ASM IP HOLDING B.V.

    Inventor： Elina Färm ,  Hidemi Suemori ,  Raija H. Matero ,  Antti Niskanen ,  Suvi P. Haukka ,  Eva Tois

    IPC: H01L21/02 ,  C23C16/40 ,  H01L21/32 ,  C23C16/455

    Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process. In some embodiments the material is deposited on the first surface relative to the second surface with a selectivity of greater than about 50%, greater than about 60%, greater than about 70%, greater than about 80%, greater than about 90% or greater than about 95%.

    FAST FOUP SWAPPING WITH A FOUP HANDLER
    253.
    发明申请
    FAST FOUP SWAPPING WITH A FOUP HANDLER 有权

    公开(公告)号：US20210343554A1

    公开(公告)日：2021-11-04

    申请号：US17242519

    申请日：2021-04-28

    Applicant: ASM IP Holding B.V.

    Inventor： Theodorus G.M. Oosterlaken ,  Jeroen Fluit

    IPC: H01L21/677

    Abstract: A vertical batch furnace assembly for processing wafers having a cassette handling space, a wafer handling space, and a first wall and separating the cassette handling space from the wafer handling space. The first wall has at least one wafer transfer opening in front of which, at a side of the first wall which is directed to the cassette handling space, a wafer transfer position for a wafer cassette is provided. The cassette handling space comprises a cassette storage having a plurality of cassette storage positions and a cassette handler configured to transfer wafer cassettes between the cassette storage positions and the wafer transfer position. The cassette handler has a first cassette handler arm and a second cassette handler arm.

    METHOD AND APPARATUS FOR FILLING A GAP
    254.
    发明申请
    METHOD AND APPARATUS FOR FILLING A GAP 有权

    公开(公告)号：US20210335595A1

    公开(公告)日：2021-10-28

    申请号：US17370197

    申请日：2021-07-08

    Applicant: ASM IP Holding B.V.

    Inventor： Viljami Pore ,  Werner Knaepen ,  Bert Jongbloed ,  Dieter Pierreux ,  Gido van Der Star ,  Toshiya Suzuki

    IPC: H01L21/02 ,  C23C16/455 ,  C23C16/50 ,  C23C16/04 ,  H01L21/762

    Abstract: There is provided a method of filling one or more gaps by providing the substrate in a reaction chamber and introducing a first reactant to the substrate with a first dose, thereby forming no more than about one monolayer by the first reactant on a first area; introducing a second reactant to the substrate with a second dose, thereby forming no more than about one monolayer by the second reactant on a second area of the surface, wherein the first and the second areas overlap in an overlap area where the first and second reactants react and leave an initially unreacted area where the first and the second areas do not overlap; and, introducing a third reactant to the substrate with a third dose, the third reactant reacting with the first or second reactant remaining on the initially unreacted area.

    VERTICAL BATCH FURNACE ASSEMBLY COMPRISING A COOLING GAS SUPPLY
    255.
    发明申请
    VERTICAL BATCH FURNACE ASSEMBLY COMPRISING A COOLING GAS SUPPLY 有权

    公开(公告)号：US20210333049A1

    公开(公告)日：2021-10-28

    申请号：US17236065

    申请日：2021-04-21

    Applicant: ASM IP Holding B.V.

    Inventor： Melvin Verbaas ,  Christianus G.M. de Ridder

    IPC: F27D3/00 ,  H01L21/67 ,  H01L21/677

    Abstract: A vertical batch furnace assembly, comprising a core tube, an outer casing, a cooling chamber bounded and enclosed by the outer casing and the core tube, and at least one cooling gas supply emanating in the cooling chamber. The core tube has an elongated circumferential wall extending in a longitudinal direction, and is configured to accommodate wafers for processing in the vertical batch furnace. The outer casing extends around the core tube and comprises a heating element for applying a thermal treatment to wafers accommodated in the core tube. The at least one cooling gas supply comprises at least one cooling gas supply opening which is arranged such that the cooling gas enters the cooling chamber with a flow direction which is substantially tangent to the circumferential wall.

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