公开(公告)号：US20140210315A1

公开(公告)日：2014-07-31

申请号：US14031454

申请日：2013-09-19

Applicant: RF Micro Devices, Inc.

Inventor： Kushal Bhattacharjee ,  Sergei Zhgoon

IPC: H03H9/17

CPC classification number: H03H9/17 ,  H03H2009/155

Abstract: A micro-electrical-mechanical system (MEMS) vibrating structure includes a carrier substrate, a first anchor, a second anchor, a single crystal piezoelectric body, a first conducting layer, and a second conducting layer. The first anchor and the second anchor are provided on the surface of the carrier substrate. The single-crystal piezoelectric body is suspended between the first anchor and the second anchor, and includes a uniform crystalline orientation defined by a set of Euler angles. The single-crystal piezoelectric body includes a first surface parallel to and facing the surface of the carrier substrate on which the first anchor and the second anchor are formed and a second surface opposite the first surface. The first conducting layer is inter-digitally dispersed on the second surface of the single-crystal piezoelectric body. The second conducting layer is inter-digitally dispersed on the first surface of the single-crystal piezoelectric body.

Abstract translation: 微电气机械系统（MEMS）振动结构包括载体基板，第一锚固件，第二锚固件，单晶体压电体，第一导电层和第二导电层。 第一锚固件和第二锚固件设置在载体基板的表面上。 单晶压电体悬挂在第一锚和第二锚之间，并且包括由一组欧拉角定义的均匀结晶取向。 单晶体压电体包括平行于并面向其上形成有第一锚和第二锚的载体基板的表面的第一表面和与第一表面相对的第二表面。 第一导电层以数字方式分散在单晶体压电体的第二表面上。 第二导电层被数字地分散在单晶体压电体的第一表面上。

公开(公告)号：US08774735B2

公开(公告)日：2014-07-08

申请号：US13937307

申请日：2013-07-09

Applicant: RF Micro Devices, Inc.

Inventor： Dharma Reddy Kadam ,  Christopher Truong Ngo ,  Nadim Khlat

IPC: H04B1/02

CPC classification number: H04L7/04 ,  G06F13/385 ,  H04J3/0685

Abstract: The present disclosure relates to RF front-end (RFFE) circuitry that includes multiple RFFE circuits, each of which may be provided by a separate integrated circuit (IC), front-end module, or both. As such, the RFFE circuits may be connected to one another using an RFFE serial communications bus. Further, one or more of the RFFE circuits may need an accurate clock source for analog-to-digital conversion (ADC), digital-to-analog conversion (DAC), calibration, sensor measurements, or the like. Instead of including an integral clock source circuit or receiving a separate external clock signal, an RFFE circuit may extract clock information from the RFFE serial communications bus to provide one or more clock signals. The clock information may be associated with one or more serial communications commands via the RFFE serial communications bus, may be associated with alternate functionality of the RFFE serial communications bus, or both.

Abstract translation: 本公开涉及包括多个RFFE电路的RF前端（RFFE）电路，每个RFFE电路可以由单独的集成电路（IC），前端模块或两者提供。 因此，RFFE电路可以使用RFFE串行通信总线彼此连接。 此外，一个或多个RFFE电路可能需要用于模数转换（ADC），数模转换（DAC），校准，传感器测量等的精确时钟源。 RFFE电路不是包含集成时钟源电路或者接收单独的外部时钟信号，而是可以从RFFE串行通信总线提取时钟信息以提供一个或多个时钟信号。 时钟信息可以经由RFFE串行通信总线与一个或多个串行通信命令相关联，可以与RFFE串行通信总线或两者的备用功能相关联。

公开(公告)号：US08749305B2

公开(公告)日：2014-06-10

申请号：US13644089

申请日：2012-10-03

Applicant: RF Micro Devices, Inc.

Inventor： James M. Retz ,  Ruediger Bauder

IPC: H03F1/14

CPC classification number: G05F3/02 ,  H03F1/0277 ,  H03F3/211 ,  H03F3/24 ,  H03F3/72 ,  H03F2203/7215 ,  H03F2203/7221

Abstract: The embodiments disclosed in the detailed description include a power amplifier having a low power mode amplifier, a medium power mode amplifier, and a high power mode amplifier in communication with a radio frequency (RF) output load. The exemplary embodiments of the power amplifier permit a wireless device to select the most power efficient means to transmit an RF signal based upon the desired output power level.

Abstract translation: 详细描述中公开的实施例包括具有低功率模式放大器，中功率模式放大器和与射频（RF）输出负载通信的高功率模式放大器的功率放大器。 功率放大器的示例性实施例允许无线设备基于期望的输出功率电平来选择用于发射RF信号的最高功率的装置。

公开(公告)号：US20140125408A1

公开(公告)日：2014-05-08

申请号：US14151167

申请日：2014-01-09

Applicant: RF Micro Devices, Inc.

Inventor： Michael R. Kay ,  Nadim Khlat

IPC: H03F1/02

CPC classification number: H03F1/02 ,  H02M3/07 ,  H03F1/0244 ,  H03F1/025 ,  H03F1/0277 ,  H03F1/42 ,  H03F3/195 ,  H03F3/245 ,  H03F3/3022 ,  H03F3/45475 ,  H03F3/505 ,  H03F3/72 ,  H03F2200/102 ,  H03F2200/204 ,  H03F2200/36 ,  H03F2200/375 ,  H03F2200/451 ,  H03F2200/555 ,  H03F2200/78 ,  H03F2203/45526 ,  H03F2203/45544 ,  H03F2203/45594 ,  H03F2203/45694 ,  H03F2203/45712 ,  H03F2203/45718 ,  H03F2203/7221

Abstract: A switch mode power supply converter, a parallel amplifier, and a parallel amplifier output impedance compensation circuit are disclosed. The switch mode power supply converter provides a switching voltage and generates an estimated switching voltage output, which is indicative of the switching voltage. The parallel amplifier generates a power amplifier supply voltage at a power amplifier supply output based on a combination of a VRAMP signal and a high frequency ripple compensation signal. The parallel amplifier output impedance compensation circuit provides the high frequency ripple compensation signal based on a difference between the VRAMP signal and the estimated switching voltage output.

Abstract translation: 公开了开关模式电源转换器，并联放大器和并联放大器输出阻抗补偿电路。 开关模式电源转换器提供开关电压并产生表示开关电压的估计开关电压输出。 并联放大器基于VRAMP信号和高频纹波补偿信号的组合在功率放大器电源输出端产生功率放大器电源电压。 并联放大器输出阻抗补偿电路根据VRAMP信号和估计的开关电压输出之间的差异提供高频纹波补偿信号。

公开(公告)号：US20140111178A1

公开(公告)日：2014-04-24

申请号：US14056292

申请日：2013-10-17

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Michael R. Kay ,  Mohammad Ahsanul Adeeb

IPC: G05F1/46

CPC classification number: G05F1/46 ,  H03F1/0211 ,  H03F1/0227 ,  H03F1/3223 ,  H03F3/189 ,  H03F3/24 ,  H03F2200/102 ,  H03F2200/432 ,  H04B2001/0441

Abstract: An envelope tracking power supply and an offset capacitive element are disclosed. The offset capacitive element is coupled between a switching output and an analog output of the envelope tracking power supply, which operates in one of an envelope tracking mode, a transition mode, and an average power tracking mode. During the envelope tracking mode, the envelope tracking power supply provides an envelope power supply signal using both the switching output and the analog output. During the transition mode, the envelope tracking power supply drives a voltage across the offset capacitive element from a first voltage to a second voltage, such that during a transition from the envelope tracking mode to the transition mode, the offset capacitive element has the first voltage, and during a transition from the transition mode to the average power tracking mode, the offset capacitive element has the second voltage.

Abstract translation: 公开了一种包络跟踪电源和偏移电容元件。 偏移电容元件耦合在包络跟踪电源的开关输出和模拟输出之间，其以包络跟踪模式，转换模式和平均功率跟踪模式之一工作。 在包络跟踪模式期间，包络跟踪电源使用开关输出和模拟输出两者提供包络电源信号。 在转换模式期间，包络跟踪电源将偏移电容元件上的电压从第一电压驱动到第二电压，使得在从包络跟踪模式转换到转换模式期间，偏移电容元件具有第一电压 ，并且在从转换模式到平均功率跟踪模式的转变期间，偏移电容元件具有第二电压。

公开(公告)号：US20140077787A1

公开(公告)日：2014-03-20

申请号：US14027416

申请日：2013-09-16

Applicant: RF Micro Devices, Inc.

Inventor： Philippe Gorisse ,  Nadim Khlat ,  Christopher Truong Ngo

IPC: H02M1/14

CPC classification number: H02M1/14 ,  H02M1/15 ,  H02M2001/0045 ,  H03F1/0211 ,  H03F1/0261

Abstract: A direct current (DC)-DC converter, which includes an open loop ripple cancellation circuit, a switching supply, and a parallel amplifier, is disclosed. During a calibration mode, the parallel amplifier provides a parallel amplifier output current to regulate a power supply output voltage based on a calibration setpoint. The switching supply drives the parallel amplifier output current toward zero using a switching control signal, such that during the calibration mode, an estimate of a current gain is based on the switching control signal. Further, during the calibration mode, the open loop ripple cancellation circuit is disabled. During a normal operation mode, the open loop ripple cancellation circuit provides a ripple cancellation current, which is based on the estimate of the current gain.

Abstract translation: 公开了一种直流（DC）-DC转换器，其包括开环纹波消除电路，开关电源和并联放大器。 在校准模式期间，并行放大器提供并行放大器输出电流，以调节基于校准设定值的电源输出电压。 开关电源使用开关控制信号将平行放大器输出电流驱动到零，使得在校准模式期间，电流增益的估计基于开关控制信号。 此外，在校准模式期间，开环纹波消除电路被禁用。 在正常工作模式下，开环纹波消除电路提供纹波消除电流，其基于当前增益的估计。

公开(公告)号：US20140062590A1

公开(公告)日：2014-03-06

申请号：US14072225

申请日：2013-11-05

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat ,  Michael R. Kay ,  Philippe Gorisse

IPC: H03F1/02

CPC classification number: H03F1/02 ,  H02M3/07 ,  H02M3/158 ,  H03F1/0227 ,  H03F3/189 ,  H03F3/24 ,  H03F2200/432 ,  H03G3/3042

Abstract: A switch mode power supply converter and a parallel amplifier are disclosed. The switch mode power supply converter is coupled to a modulated power supply output and the parallel amplifier has a parallel amplifier output coupled to the modulated power supply output. Further, the parallel amplifier has a group of output stages, such that each output stage is directly coupled to the parallel amplifier output and each output stage receives a separate supply voltage.

Abstract translation: 公开了一种开关电源转换器和并联放大器。 开关模式电源转换器耦合到调制电源输出，并联放大器具有耦合到调制电源输出的并行放大器输出。 此外，并联放大器具有一组输出级，使得每个输出级直接耦合到并行放大器输出，并且每个输出级接收单独的电源电压。

公开(公告)号：US20140054602A1

公开(公告)日：2014-02-27

申请号：US13966400

申请日：2013-08-14

Applicant: RF Micro Devices, Inc.

Inventor： Joseph Herbert Johnson

IPC: H01L29/78 ,  H01L29/66

CPC classification number: H01L29/78 ,  H01L29/2003 ,  H01L29/41725 ,  H01L29/42316 ,  H01L29/4238 ,  H01L29/66477 ,  H01L29/7787

Abstract: A field effect transistor (FET) having fingers with rippled edges is disclosed. The FET includes a semiconductor substrate having a front side with a finger axis. A drain finger is disposed on the front side of the semiconductor substrate such that a greatest dimension of the drain finger lies parallel to the finger axis. A gate finger is disposed on the front side of the semiconductor substrate. The gate finger is spaced from the drain finger such that a greatest dimension of the gate finger lies parallel to the finger axis. A source finger is disposed on the front side of the semiconductor substrate. The source finger is spaced from the gate finger such that a greatest dimension of the source finger lies parallel to the finger axis. The drain finger, the gate finger, and the source finger each have rippled edges with an axis parallel with the finger axis.

Abstract translation: 公开了具有波纹边缘的手指的场效应晶体管（FET）。 FET包括具有指状轴线的前侧的半导体衬底。 排水指状物设置在半导体衬底的前侧，使得排水指状件的最大尺寸平行于指状轴线。 栅极指状物设置在半导体衬底的正面上。 门指与排水手指间隔开，使得门指的最大尺寸平行于指轴。 源极指设置在半导体衬底的正面上。 源极指与栅极指状物间隔开，使得源极指的最大尺寸平行于指状轴线。 排水手指，门指和源手指各自具有波纹边缘，轴线与指轴平行。

公开(公告)号：US20140024322A1

公开(公告)日：2014-01-23

申请号：US13942778

申请日：2013-07-16

Applicant: RF Micro Devices, Inc.

Inventor： Nadim Khlat

IPC: H04B7/04

CPC classification number: H04B7/0404 ,  H04B1/006 ,  H04B7/0602 ,  H04B7/0802

Abstract: A radio front end that includes a diversity switch module adapted to route diversity receive (RX) signals to transceiver circuitry from diversity antenna switch circuitry coupled to at least one diversity antenna port is disclosed. The radio front end further includes ultrahigh band (UHB) switch circuitry adapted to route UHB transmit (TX) signals from power amplifier and switch circuitry to a UHB antenna port and/or to at least one diversity antenna port. The UHB switch circuitry is also adapted to route UHB RX signals from the UHB antenna port and/or to at least one antenna port to the transceiver circuitry, wherein the UHB RX signals include band 7 (B7) wherein linearity of the UHB switch circuitry is greater than linearity of the diversity switch module.

Abstract translation: 公开了一种无线电前端，其包括适于将分集接收（RX）信号从耦合到至少一个分集天线端口的分集天线切换电路的收发器电路路由到分集交换模块。 无线电前端还包括适于将UHB发射（TX）信号从功率放大器和开关电路路由到UHB天线端口和/或至少一个分集天线端口的超高频（UHB）开关电路。 UHB开关电路还适于将UHB RX信号从UHB天线端口和/或至少一个天线端口路由到收发器电路，其中UHB RX信号包括带7（B7），其中UHB开关电路的线性度为 大于分集开关模块的线性度。

公开(公告)号：US20140015609A1

公开(公告)日：2014-01-16

申请号：US13942998

申请日：2013-07-16

Applicant: RF Micro Devices, Inc.

Inventor： Ramakrishna Vetury ,  Jeffrey Blanton Shealy

IPC: H03F3/193

CPC classification number: H03F3/193 ,  H03F1/226 ,  H03F3/265 ,  H03F2200/06 ,  H03F2200/09 ,  H03F2200/534 ,  H03F2200/541 ,  H03F2200/63

Abstract: A wide bandwidth radio frequency amplifier is disclosed. The wide bandwidth radio frequency amplifier has a first signal path having a first input and a first output along with a first dual gate field effect transistor having a first-first gate coupled to the first input and a first drain coupled to the first output. The wide bandwidth radio frequency amplifier also includes a second signal path having a second input and a second output and a second dual gate field effect transistor having a second-first gate coupled to the second input and a second drain coupled to the second output.

Abstract translation: 公开了一种宽带宽射频放大器。 宽带宽射频放大器具有第一信号路径，其具有第一输入和第一输出以及具有耦合到第一输入的第一第一栅极的第一双栅场效应晶体管和耦合到第一输出的第一漏极。 宽带宽射频放大器还包括具有第二输入和第二输出的第二信号路径和具有耦合到第二输入的第二第一栅极和耦合到第二输出的第二漏极的第二双栅场效应晶体管。