公开(公告)号：US06975009B2

公开(公告)日：2005-12-13

申请号：US10853848

申请日：2004-05-25

Applicant: Randall L. Kubena ,  David T. Chang

Inventor： Randall L. Kubena ,  David T. Chang

IPC: B81B3/00 ,  B81C1/00 ,  G01C19/5656 ,  G01P15/08 ,  H01L29/82

CPC classification number: B81C1/0015 ,  B81B2201/0242 ,  B81C2201/014 ,  B81C2201/0191 ,  B81C2203/036 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894

Abstract: A MEM tunneling gyroscope assembly includes (1) a beam structure, and a mating structure defined on a first substrate or wafer; and (2) at least one contact structure, and a mating structure defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer; and (3) a bonding layer is disposed on at least one of said mating structures for bonding the mating structure defined on the first substrate or wafer to the mating structure on the second substrate or wafer.

Abstract translation: MEM隧道陀螺仪组件包括（1）梁结构和限定在第一衬底或晶片上的配合结构; 以及（2）至少一个接触结构以及限定在第二衬底或晶片上的配合结构，所述第二衬底或晶片上的所述配合结构与所述第一衬底或晶片上的配合结构互补形状; 和（3）粘合层设置在至少一个所述配合结构上，用于将限定在第一衬底或晶片上的配合结构接合到第二衬底或晶片上的配合结构。

公开(公告)号：US20050054134A1

公开(公告)日：2005-03-10

申请号：US10898114

申请日：2004-07-22

Applicant: Wilhelm Frey ,  Silvia Kronmueller ,  Christoph Duenn ,  Gary Yama ,  Jochen Zoellin

Inventor： Wilhelm Frey ,  Silvia Kronmueller ,  Christoph Duenn ,  Gary Yama ,  Jochen Zoellin

IPC: B81B7/00 ,  B81C1/00 ,  H01L21/00 ,  H01L21/331 ,  H01L21/8222

CPC classification number: B81C1/00595 ,  B81C2201/014

Abstract: A method for manufacturing a microsystem is provided, which microsystem has a first functional layer situated on a substrate provided with an integrated circuit, the first functional layer including a conductive area and a sub-layer, and a second mechanical functional layer situated on the first functional layer. In the manufacturing method, the second mechanical functional layer is first applied to a sacrificial layer situated on the first functional layer and structured. In addition, a protective layer is provided in selected areas on the side of sub-layer facing away from the conductive area, such that as the sacrificial layer is etched, etching of the areas of the first functional layer covered by the protective layer is prevented, and in the areas of the first functional layer without the protective layer, the sub-layer is selectively etched simultaneously with the sacrificial layer, down to the conductive area.

Abstract translation: 提供了一种用于制造微系统的方法，该微系统具有位于设置有集成电路的基板上的第一功能层，第一功能层包括导电区域和子层，第二机械功能层位于第一 功能层。 在制造方法中，首先将第二机械功能层施加到位于第一功能层上并构成的牺牲层。 此外，在子层背离导电区域的一侧的选定区域中提供保护层，使得当牺牲层被蚀刻时，防止由保护层覆盖的第一功能层的区域的蚀刻 ，并且在没有保护层的第一功能层的区域中，子层与牺牲层同时选择性地蚀刻到导电区域。

公开(公告)号：US20050017276A1

公开(公告)日：2005-01-27

申请号：US10877696

申请日：2004-06-25

Applicant: Kimiya Ikushima ,  Hiroyoshi Komobuchi ,  Mikiya Uchida

Inventor： Kimiya Ikushima ,  Hiroyoshi Komobuchi ,  Mikiya Uchida

IPC: B81B3/00 ,  G01F1/684 ,  G01J5/10 ,  G01J5/20 ,  G01J5/34 ,  H01L31/062

CPC classification number: G01J5/20 ,  B81B3/0072 ,  B81B2201/0207 ,  B81B2203/0127 ,  B81C1/00047 ,  B81C1/00801 ,  B81C2201/0109 ,  B81C2201/014 ,  G01F1/6845 ,  G01J5/023 ,  G01J5/024 ,  G01J5/045 ,  G01J5/10 ,  G01J5/34

Abstract: A method for fabricating an electronic device includes the steps of: preparing a cavity defining sacrificial layer, at least the upper surface of which is covered with an etch stop layer; forming at least one first opening in the etch stop layer, thereby partially exposing the surface of the cavity defining sacrificial layer; etching the cavity defining sacrificial layer through the first opening, thereby defining a provisional cavity under the etch stop layer and a supporting portion that supports the etch stop layer thereon; and etching away a portion of the etch stop layer, thereby defining at least one second opening that reaches the provisional cavity through the etch stop layer and expanding the provisional cavity into a final cavity.

Abstract translation: 一种制造电子器件的方法包括以下步骤：制备限定牺牲层的空腔，其至少其上表面被蚀刻停止层覆盖; 在蚀刻停止层中形成至少一个第一开口，从而部分地暴露限定牺牲层的空腔的表面; 蚀刻通过所述第一开口限定牺牲层的所述腔，从而在所述蚀刻停止层下方限定临时空腔，以及在其上支撑所述蚀刻停止层的支撑部分; 并且蚀刻掉蚀刻停止层的一部分，从而限定通过蚀刻停止层到达临时腔的至少一个第二开口，并将临时空腔膨胀成最终空腔。

公开(公告)号：US06841838B2

公开(公告)日：2005-01-11

申请号：US10223874

申请日：2002-08-19

Applicant: Randall L. Kubena ,  David T. Chang

Inventor： Randall L. Kubena ,  David T. Chang

IPC: B81B3/00 ,  B81C1/00 ,  G01C19/5656 ,  G01P15/08 ,  H01L29/82

CPC classification number: B81C1/0015 ,  B81B2201/0242 ,  B81C2201/014 ,  B81C2201/0191 ,  B81C2203/036 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894

Abstract: A method of making a micro electromechanical gyroscope. A cantilevered beam structure, first portions of side drive electrodes and a mating structure are defined on a first substrate or wafer; and at least one contact structure, second portions of the side drive electrodes and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer and the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and also between the first and second portions of the side drive electrodes to cause a bond to occur therebetween. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.

Abstract translation: 制造微机电陀螺仪的方法。 悬臂梁结构，侧驱动电极的第一部分和配合结构限定在第一基板或晶片上; 并且至少一个接触结构，侧驱动电极的第二部分和配合结构限定在第二衬底或晶片上，第二衬底或晶片上的配合结构与第一衬底上的配合结构互补形状，或 并且所述侧驱动电极的第一和第二部分彼此互补形状。 在至少一个配合结构和侧驱动电极的一个或第一和第二部分中提供粘结层，优选共晶粘结层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力，使得在接合或共晶层处的两个配合结构之间以及侧驱动电极的第一和第二部分之间发生接合，从而在它们之间发生接合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。 键优选为共晶键。

公开(公告)号：US20040232107A1

公开(公告)日：2004-11-25

申请号：US10686764

申请日：2003-10-17

Applicant: FUJITSU LIMITED ,  FUJITSU MEDIA DEVICES LIMITED

Inventor： Norinao Kouma ,  Yoshihiro Mizuno ,  Osamu Tsuboi ,  Hisao Okuda ,  Hiromitsu Soneda ,  Satoshi Ueda ,  Ippei Sawaki ,  Yoshitaka Nakamura

IPC: B44C001/22

CPC classification number: B81C1/00182 ,  B81B2201/0235 ,  B81B2201/033 ,  B81B2201/042 ,  B81C2201/014 ,  B81C2201/0174 ,  G02B26/0841

Abstract: A method is for manufacturing a microstructure having a thin-walled portion with use of a material substrate. The material substrate has a laminated structure which includes a first conductor layer 101, a second conductor layer 102, a third conductor layer 103, a first insulating layer 104 interposed between the first conductor layer and the second conductor layer, and a second insulating layer 105 interposed between the second conductor layer and the third conductor layer. The first insulating layer is patterned to have a first masking part for covering a thin-wall forming region of the second conductor layer. The second insulating layer is patterned to have a second masking part for covering the thin-wall forming region of the second conductor layer. The method includes forming the thin-walled portion in the second conductor portion by etching the material substrate from the first conductor layer down to the second insulating layer via a mask pattern 58 including a non-masking region corresponding to the thin-wall forming region of the second conductor layer.

Abstract translation: 一种使用材料基板制造具有薄壁部分的微结构的方法。 材料基板具有包括第一导体层101，第二导体层102，第三导体层103，插入在第一导体层和第二导体层之间的第一绝缘层104和第二绝缘层105的层叠结构 插入在第二导体层和第三导体层之间。 第一绝缘层被图案化以具有用于覆盖第二导体层的薄壁形成区域的第一掩模部分。 图案化第二绝缘层以具有用于覆盖第二导体层的薄壁形成区域的第二掩模部分。 该方法包括：通过掩模图案58将材料基板从第一导体层蚀刻到第二绝缘层，从而在第二导体部分中形成薄壁部分，掩模图案58包括对应于薄壁形成区域的非屏蔽区域 第二导体层。

公开(公告)号：US06815866B2

公开(公告)日：2004-11-09

申请号：US10335892

申请日：2003-01-03

Applicant: Hee-Joong Lee

Inventor： Hee-Joong Lee

IPC: H02N200

CPC classification number: B81C1/0015 ,  B81B3/0078 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/014

Abstract: A cantilever having a step-up structure and a method of manufacturing the same. The cantilever includes a substrate, an anchor formed on the substrate, and a moving plate connected to the anchor while maintaining a predetermined gap from the substrate. The anchor includes a first anchor of a predetermined shape and a second anchor perpendicular to an edge of the first anchor while being formed along a longitudinal axis of the moving plate. Accordingly, a deformation of the cantilever caused by the high temperature and pressure in a manufacturing process thereof is considerably reduced. As a result, the yield rate of the cantilever is improved, and the reliability of a product using the cantilever is also improved.

Abstract translation: 具有升压结构的悬臂及其制造方法。 悬臂包括基板，形成在基板上的锚固件和连接到锚固件的活动板，同时保持与基板的预定间隙。 锚固件包括具有预定形状的第一锚定件和垂直于第一锚固件的边缘的第二锚定件，同时沿着移动板的纵向轴线形成。 因此，在其制造过程中由高温和高压引起的悬臂变形显着降低。 结果，提高了悬臂的屈服率，并且提高了使用悬臂的产品的可靠性。

公开(公告)号：US20030127698A1

公开(公告)日：2003-07-10

申请号：US10335892

申请日：2003-01-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hee-Joong Lee

IPC: H02N002/00

CPC classification number: B81C1/0015 ,  B81B3/0078 ,  B81B2203/0118 ,  B81B2203/0307 ,  B81B2203/04 ,  B81C2201/0109 ,  B81C2201/014

Abstract: A cantilever having a step-up structure and a method of manufacturing the same. The cantilever includes a substrate, an anchor formed on the substrate, and a moving plate connected to the anchor while maintaining a predetermined gap from the substrate. The anchor includes a first anchor of a predetermined shape and a second anchor perpendicular to an edge of the first anchor while being formed along a longitudinal axis of the moving plate. Accordingly, a deformation of the cantilever caused by the high temperature and pressure in a manufacturing process thereof is considerably reduced. As a result, the yield rate of the cantilever is improved, and the reliability of a product using the cantilever is also improved.

Abstract translation: 具有升压结构的悬臂及其制造方法。 悬臂包括基板，形成在基板上的锚固件和连接到锚固件的活动板，同时保持与基板的预定间隙。 锚固件包括具有预定形状的第一锚定件和垂直于第一锚固件的边缘的第二锚定件，同时沿着移动板的纵向轴线形成。 因此，在其制造过程中由高温和高压引起的悬臂变形显着降低。 结果，提高了悬臂的屈服率，并且提高了使用悬臂的产品的可靠性。

公开(公告)号：US06555404B1

公开(公告)日：2003-04-29

申请号：US09629679

申请日：2000-08-01

Applicant: Randall L. Kubena ,  David T. Chang

Inventor： Randall L. Kubena ,  David T. Chang

IPC: H01L2100

CPC classification number: B81C1/0015 ,  B81B2201/0242 ,  B81C2201/014 ,  B81C2201/0191 ,  B81C2203/036 ,  G01C19/5656 ,  G01P15/0802 ,  G01P15/0894

Abstract: A method of making a micro electromechanical gyroscope. A cantilevered beam structure, first portions of side drive electrodes and a mating structure are defined on a first substrate or wafer; and at least one contact structure, second portions of the side drive electrodes and a mating structure are defined on a second substrate or wafer, the mating structure on the second substrate or wafer being of a complementary shape to the mating structure on the first substrate or wafer and the first and second portions of the side drive electrodes being of a complementary shape to each other. A bonding layer, preferably a eutectic bonding layer, is provided on at least one of the mating structures and one or the first and second portions of the side drive electrodes. The mating structure of the first substrate is moved into a confronting relationship with the mating structure of the second substrate or wafer. Pressure is applied between the two substrates so as to cause a bond to occur between the two mating structures at the bonding or eutectic layer and also between the first and second portions of the side drive electrodes to cause a bond to occur therebetween. Then the first substrate or wafer is removed to free the cantilevered beam structure for movement relative to the second substrate or wafer. The bonds are preferably eutectic bonds.

Abstract translation: 制造微机电陀螺仪的方法。 悬臂梁结构，侧驱动电极的第一部分和配合结构限定在第一基板或晶片上; 并且至少一个接触结构，侧驱动电极的第二部分和配合结构限定在第二衬底或晶片上，第二衬底或晶片上的配合结构与第一衬底上的配合结构互补形状，或 并且所述侧驱动电极的第一和第二部分彼此互补形状。 在至少一个配合结构和侧驱动电极的一个或第一和第二部分中提供粘结层，优选共晶粘结层。 第一基板的配合结构被移动成与第二基板或晶片的配合结构面对面的关系。 在两个基板之间施加压力，使得在接合或共晶层处的两个配合结构之间以及侧驱动电极的第一和第二部分之间发生接合，从而在它们之间发生接合。 然后移除第一衬底或晶片以释放悬臂梁结构以相对于第二衬底或晶片移动。 键优选为共晶键。

公开(公告)号：US20020190319A1

公开(公告)日：2002-12-19

申请号：US10038890

申请日：2002-01-02

Inventor： Jeffrey Borenstein

IPC: H01L027/12

CPC classification number: B81C1/00119 ,  B81B2201/0235 ,  B81C1/00357 ,  B81C2201/0132 ,  B81C2201/014 ,  B81C2201/019 ,  B81C2201/0191

Abstract: The invention provides a general fabrication method for producing MicroElectroMechanical Systems (MEMS) and related devices using Silicon-On-Insulator (SOI). One first obtains an SOI wafer that has (i) a handle layer, (ii) a a dielectric layer, and (iii) a device layer. A mesa etch has been made on the device layer of the SOI wafer and a structural etch has been made on the dielectric layer of the SOI wafer. One then obtains a substrate (such as glass or silicon), where a pattern has been etched onto the substrate. The SOI wafer and the substrate are bonded together. Then the handle layer of the SOI wafer is removed, followed by the dielectric layer of the SOI wafer.

Abstract translation: 本发明提供了使用绝缘体上硅（SOI）制造微电子机械系统（MEMS）和相关器件的一般制造方法。 首先获得具有（i）手柄层，（ii）介电层和（iii）器件层）的SOI晶片。 已经在SOI晶片的器件层上进行了台面蚀刻，并且在SOI晶片的电介质层上进行了结构蚀刻。 然后，获得衬底（例如玻璃或硅），其中已将图案蚀刻到衬底上。 SOI晶片和衬底结合在一起。 然后去除SOI晶片的手柄层，随后是SOI晶片的电介质层。

公开(公告)号：US20020125208A1

公开(公告)日：2002-09-12

申请号：US10141740

申请日：2002-05-09

Applicant: DELPHI TECHNOLOGIES, INC.

Inventor： John Carl Christenson ,  Steven Edward Staller ,  John Emmett Freeman ,  Troy Allan Chase ,  Robert Lawrence Healton ,  David Boyd Rich

IPC: C23F001/00

CPC classification number: B81C1/0019 ,  B81B2201/0235 ,  B81C2201/014 ,  B81C2201/019

Abstract: A micro-electro-mechanical structure including a semiconductor layer mounted to an annular support structure via an isolation layer wherein the semiconductor layer is micromachined to form a suspended body having a plurality of suspension projections extending from the body to the rim and groups of integral projections extending toward but spaced from the rim between said suspension projections. Each projection in said groups has a base attached to the body and a tip proximate the rim. The structure includes a plurality of inward projections extending from and supported on the rim and toward the body. Each such projection has a base attached to the rim and a tip proximate the body; wherein the grouped projections and the inward projections are arranged in an interdigitated fashion to define a plurality of proximate projection pairs independent of the suspension elements such that a primary capacitive gap is defined between the projections of each projection pair. Also, a process is disclosed for fabricating the micro-electro-mechanical structure including the steps of removing a highly doped etch termination layer and thereafter etching through a lightly doped epitaxial layer to thereby define and release the structure.