Abstract:
An electronic device includes an output terminal, an output transistor having a control terminal and a conduction terminal coupled to the output terminal, and a resistor-capacitor (RC) compensation network configured to act on the control terminal of the output transistor. In addition, the electronic device includes a transconductance amplifier configured to drive the output terminal through the control terminal of the output transistor, and a Miller effect stage coupled to the RC compensation network and having an input port coupled to the transconductance amplifier and an output port coupled to the control terminal of the output transistor.
Abstract:
A switching converter converts an input signal to a regulated output signal using a switch and a transformer with a primary winding and a secondary winding. A wake up management circuit receives a transformer demagnetization signal and forces by wake up pulses the switch on when the switching converter operates in a burst mode. Sampled values of the transformer demagnetization signal are received. A setting circuit sets a first peak value of the current of the primary winding. A comparison circuit compare the sampled values with a voltage threshold and the preceding sampled value. In response thereto, the first peak value of the primary winding current is either maintained or a new peak value is set.
Abstract:
An effective method enhances energy saving at low load in a resonant converter with a hysteretic control scheme for implementing burst-mode at light load. The method causes a current controlled oscillator of the converter to stop oscillating when a feedback control current of the output voltage of the converter reaches a first threshold value, and introduces a nonlinearity in the functional relation between the frequency of oscillation and said feedback control current or in a derivative of the functional relation, while the control current is between a lower, second threshold value and the first threshold value, such that the frequency of oscillation remains equal or smaller than the frequency of oscillation when the control current is equal to the second threshold value. Several circuital implementations are illustrated, all of simple realization without requiring any costly microcontroller.
Abstract:
A monitoring device is for a block of building material. The monitoring device may include an electric supply line configured to be buried in the block of building material and having a flexible main cable, and flexible jumper cables coupled to the flexible main cable and extending outwardly. The monitoring device may include sensor devices configured to be buried in the block of building material and coupled to respective ones of the flexible jumper cables. Each sensor device may include a primary inductor coupled to the electric supply line at a position based upon peaks of a stationary waveform when the electric supply line is alternating current (AC) powered, and a monitoring circuit. The monitoring circuit may include an integrated sensor, and a secondary inductor magnetically coupled to the primary inductor and configured to supply the integrated sensor, and communicate through the electric supply line.
Abstract:
An embodiment is directed to extended test coverage of complex multi-clock-domain integrated circuits without forgoing a structured and repeatable standard approach, thus avoiding custom solutions and freeing the designer to implement his RTL code, respecting only generally few mandatory rules identified by the DFT engineer. Such an embodiment is achieved by introducing in the test circuit an embodiment of an additional functional logic circuit block, named “inter-domain on chip clock controller” (icOCC), interfaced with every suitably adapted clock-gating circuit (OCC), of the different clock domains. The icOCC actuates synchronization among the different OCCs that source the test clock signals coming from an external ATE or ATPG tool and from internal at-speed test clock generators to the respective circuitries of the distinct clock domains. Scan structures like the OCCs, scan chain, etc., may be instantiated at gate pre-scan level, with low impact onto the functional RTL code written by the designer.
Abstract:
A non-volatile memory includes memory cells arranged in rows and columns. Each memory cell includes a program/read portion and an erase portion that share an electrically floating layer of conductive material defining a first capacitive coupling with the program/read portion and a second capacitive coupling with the erase portion. The first capacitive coupling defines a first capacitance greater than a second capacitance defined by the second capacitive coupling. The erase portion is configured so that an electric current extracts charge carriers from the electrically floating layer to store a first logic value in the memory cell. The program/read portion is further configured so that an electric current injects charge carriers in the electrically floating layer to store a second logic value in the memory cell.
Abstract:
The semiconductor integrated device has a conductive region, for example, an external contact pad, configured to be traversed by a current to be measured. A concentrator of magnetic material partially surrounds the conductive region and has an annular shape open at a point defining an air gap area where a sensitive region is arranged, which is electrically conductive and is typically of doped semiconductor material, such as polycrystalline silicon. The device is integrated in a chip formed by a substrate and by an insulating layer, the sensitive region and the concentrator being formed in the insulating layer.
Abstract:
A power bipolar structure is described having at least one first, one second and one third terminal and including at least one power bipolar transistor having a finger structure coupled to at least one driving block. The power bipolar transistor includes at least one elemental bipolar cell connected to these first, second and third terminals and including at least one power elemental bipolar structure corresponding to a finger of the power bipolar transistor, electrically coupled between the first and second terminals and coupled to a driving section of the driving block by at least one sensing section able to detect information on the operation of the power elemental bipolar structure, the sensing section being in turn coupled to a control circuit and supplying it with a current value as a function of the local temperature of the power elemental bipolar structure.
Abstract:
A thermal control process for an electronic power device including a multi-junction integrated circuit may include defining a first and at least one second groups of junctions, with each group including one first and at least one second junctions, and associating a thermal detector with each group. A first group control may be executed which detects group electric signals representative of the temperature detected by the thermal detectors, processes the group electric signals with reference to a group critical thermal event, identifies a critical group when the corresponding group electric signal detects the critical group thermal event, and generates group deactivating signals suitable for selectively deactivating the first and the at least one second junctions of the identified critical group with respect to the remaining junctions of the integrated circuit.
Abstract:
An apparatus includes first and second oscillator circuits. A transformer has a primary winding coupling the first oscillator circuit to the second oscillator circuit and a secondary winding. A first outgoing communications circuit is coupled to the second oscillator circuit and drives an amplitude modulated data signal thereto. A first incoming communications circuit is coupled to the primary winding of the transformer. A second outgoing communications circuit is coupled to the secondary winding drives an amplitude modulated data signal thereto. A second incoming communications circuit is coupled to the secondary winding. The secondary winding is magnetically coupled with the primary winding so the secondary winding receives an output power and an incoming data transmission based upon the amplitude modulated data signal, and so the primary winding receives an incoming high speed data transmission based upon the amplitude modulated data signal.