Simplified radiation spectrum analyzer

    公开(公告)号:US09664802B1

    公开(公告)日:2017-05-30

    申请号:US15190410

    申请日:2016-06-23

    IPC分类号: G01T1/36

    CPC分类号: G01T1/36

    摘要: A simplified device is provided for analyzing radiation spectrum. A detector absorbs radioactive particles for generating signal pulses. A signal converter is connected with the detector to discriminate and amplify the signal pulses to be converted into digital pulses. The microcomputer single-chip is connected with the signal converter to measure dual-channel pulse widths for statistical analysis and to measure pulse free count. Under a very low power mode, a pair of information comprising random physical memory spectrum and pulse count are generated. The microcomputer single-chip has a low cost and can be abundantly supplied. Thus, by using the microcomputer single-chip as a touch-driven application, a reading module replaces the high-frequency precision clock. The reading module is built-in for charging voltages with constant-current pulses. Consequently, spectrum analysis is performed for the signal pulses of gamma ray detected by the detector.

    Semiconductor device and patterning method for plated electrode thereof
    23.
    发明授权
    Semiconductor device and patterning method for plated electrode thereof 有权
    其电镀电极的半导体装置及其构图方法

    公开(公告)号:US09570635B2

    公开(公告)日:2017-02-14

    申请号:US14608465

    申请日:2015-01-29

    摘要: The present invention discloses in detail a semiconductor device and a patterning method for the plated electrode thereof. By using the laser ablation method according to the prior art, the semiconductor substrate below the ARC is damaged by direct destructive burning. According to the present invention, an additional protection layer is inserted between the ARC and the semiconductor substrate. Then a laser is used for heating and liquefying the protection layer below the ARC, and thus separating the ARC from the liquefied protection layer underneath and forming pattered openings. Afterwards, by a plating process, nickel and copper can plated.

    摘要翻译: 本发明公开了其电镀电极的半导体器件及其构图方法。 通过使用根据现有技术的激光烧蚀方法,ARC下方的半导体衬底被直接破坏性燃烧损坏。 根据本发明,在ARC和半导体衬底之间插入附加保护层。 然后使用激光来加热和液化ARC下方的保护层,从而将ARC与下面的液化保护层分开并形成图案化的开口。 之后,通过电镀工艺,可镀镍和铜。