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公开(公告)号:US20200091470A1
公开(公告)日:2020-03-19
申请号:US16692367
申请日:2019-11-22
Applicant: STMicroelectronics (Tours) SAS
Inventor: Julien LADROUE , Mohamed BOUFNICHEL
IPC: H01M2/06 , H01M2/30 , H01M2/02 , H01M2/20 , H01M10/058
Abstract: A battery structure has structure anode and cathode contacts on a front face and on a rear face. The battery structure includes a battery having battery anode and cathode contacts only on a front face thereof. A film including a conductive layer and an insulating layer jackets the battery. The conductive layer extends over the battery anode and cathode contacts and is interrupted therebetween. Openings are provided in the insulating layer on the front and rear faces of the battery structure to form the structure anode and cathode contacts of the battery structure.
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公开(公告)号:US10529703B2
公开(公告)日:2020-01-07
申请号:US15436998
申请日:2017-02-20
Applicant: STMicroelectronics (Tours) SAS
Inventor: Aurelie Arnaud
IPC: H01L23/60 , H01L27/02 , H01L21/265 , H01L21/324 , H01L27/08 , H01L29/06 , H01L29/167 , H01L29/36 , H01L29/66 , H02H9/04
Abstract: An electrostatic discharge protection device includes the following successive structures: a very heavily-doped semiconductor substrate of a first conductivity type; a first heavily-doped buried semiconductor layer of a second conductivity type; a first lightly-doped semiconductor layer of the second conductivity type; and a second heavily-doped layer of the first conductivity type. The device further includes, located between first heavily-doped buried semiconductor layer and the first lightly-doped semiconductor layer, a third doped layer of the first conductivity type having a thickness and a dopant atom concentration configured to form, at a junction of the first lightly-doped semiconductor layer and the third layer, a diode having a reverse punchthrough operation.
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公开(公告)号:US20190296005A1
公开(公告)日:2019-09-26
申请号:US16359431
申请日:2019-03-20
Applicant: STMicroelectronics (Tours) SAS
Inventor: Patrick POVEDA
IPC: H01L27/02 , H01L29/866 , H01L27/06 , H01L29/06 , H01L29/87 , H01L23/522 , H03H11/04 , H01L23/528 , H02H9/04
Abstract: An electronic component includes first and second separate semiconductor regions. A third semiconductor region is arranged under and between the first and second semiconductor regions. The first and third semiconductor regions define electrodes of a first diode. The second and third semiconductor regions define electrodes of a second diode. The first diode is an avalanche diode.
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公开(公告)号:US10148810B2
公开(公告)日:2018-12-04
申请号:US15045935
申请日:2016-02-17
Applicant: STMicroelectronics (Tours) SAS
Inventor: Jean-Michel Simonnet , Christian Ballon
Abstract: A structure protects a SLIC telephone line interface against overvoltages lower than a negative threshold or higher than a positive threshold. The structure includes at least one thyristor connected between each conductor of the telephone line and a reference potential. For all of the included thyristors, a metallization corresponding to the main electrode on the gate side is in contact, by its entire surface, with a corresponding semiconductor region. Furthermore, the gate of each thyristor is directly connected to a voltage source defining one of the thresholds.
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公开(公告)号:US20180315965A1
公开(公告)日:2018-11-01
申请号:US16031098
申请日:2018-07-10
Applicant: STMicroelectronics (Tours) SAS
Inventor: Ludovic Fallourd
CPC classification number: H01M2/06 , H01M2/0404 , H01M2/0408 , H01M2/1022 , H01M2/204 , H01M2/30 , H01M10/0436 , H01M10/044 , H01M2220/30
Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.
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公开(公告)号:US20180219584A1
公开(公告)日:2018-08-02
申请号:US15702207
申请日:2017-09-12
Applicant: STMicroelectronics (Tours) SAS
Inventor: Igor Bimbaud , Eric Colleoni
IPC: H04B5/00 , G06K19/07 , H04B1/3888 , H04M1/02 , H02J7/00
CPC classification number: H04B5/0037 , G06K19/0704 , H02J7/0054 , H02J7/025 , H02J50/10 , H04B1/3888 , H04M1/0202 , H04M1/185
Abstract: A case includes a base for receiving a portable phone and a flap hinged to the base and including a housing configured to receive a microcircuit card. A first contactless communication antenna is provided in the flap for coupling to an antenna of the microcircuit card. A second contactless communication antenna is provided in the base for coupling to an antenna of the portable phone. The first and second first contactless communication antennae are electrically connected to each other.
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公开(公告)号:US10014797B2
公开(公告)日:2018-07-03
申请号:US15659822
申请日:2017-07-26
Applicant: STMicroelectronics (Tours) SAS
Inventor: Laurent Gonthier , Muriel Nina , Romain Pichon
CPC classification number: H02M7/162 , H02M1/081 , H02M7/062 , H02M7/125 , H02M7/1623
Abstract: An AC/DC converter includes: a first terminal and a second terminal for receiving an AC voltage and a third terminal and a fourth terminal for supplying a DC voltage. A rectifying bridge includes input terminals respectively coupled to the first terminal and the second terminal, and output terminals respectively coupled to the third terminal and fourth terminal. A first branch of the rectifying bridge includes, connected between the output terminals, two series-connected thyristors with a junction point of the two thyristors being connected to a first one of the input terminals. A second branch of the rectifying bridge is formed by series connected diodes. A control circuit is configured to generate control signals for application to the control gates of the thyristors.
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公开(公告)号:US09923176B2
公开(公告)日:2018-03-20
申请号:US14681237
申请日:2015-04-08
Applicant: STMicroelectronics (Tours) SAS
Inventor: Alexis Durand , Franck Dosseul
CPC classification number: H01M2/0202 , H01M2/0478 , H01M2/22 , H01M10/0436 , H01M2220/30
Abstract: An electronic device includes a flexible conductive member having a first length, and a battery substrate having a second length shorter or equal than the first length. There is an active battery on the battery substrate. An adhesive layer couples the active battery and the battery substrate to the flexible conductive member such that the active battery and the flexible conductive member are electrically coupled, and such that the flexible substrate encapsulates the active battery and the upper portion of the battery substrate without an intervening layer. The flexible conductive member includes an insulating flexible base layer having a conductive via formed therein. Upper and lower metallized layers are formed on the insulating flexible base layer and are electrically coupled to one another by the conductive via.
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公开(公告)号:US20180069206A1
公开(公告)日:2018-03-08
申请号:US15260008
申请日:2016-09-08
Applicant: STMicroelectronics (Tours) SAS
Inventor: Ludovic Fallourd
CPC classification number: H01M2/06 , H01M2/0404 , H01M2/0408 , H01M2/1022 , H01M2/204 , H01M2/30 , H01M10/0436 , H01M10/044 , H01M2220/30
Abstract: Disclosed herein is an electronic device including a substrate, with an active layer stack on the substrate. A cover is on the active layer stack and has a surface area greater than that of the active layer so as to encapsulate the active layer stack. A conductive pad layer is on the cover. At least one conductive via extends between the active layer stack and the conductive pad layer.
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公开(公告)号:US09847178B2
公开(公告)日:2017-12-19
申请号:US14549358
申请日:2014-11-20
Applicant: STMicroelectronics (Tours) SAS
Inventor: Sylvain Charley
CPC classification number: H01G7/00 , H03H11/481 , H03H11/483
Abstract: A circuit for controlling a capacitor having a capacitance adjustable by biasing, including an amplifier for delivering a D.C. bias voltage, having a feedback slowed down by a resistive and capacitive cell.
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