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公开(公告)号：US835194A
公开(公告)日：1906-11-06
申请号：US1906317189
申请日：1906-05-16
Applicant: MATHIESON ALEXANDER SIMPSON
Inventor： MATHIESON ALEXANDER SIMPSON
CPC classification number: B25B7/12
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公开(公告)号：US08690519B2
公开(公告)日：2014-04-08
申请号：US13020873
申请日：2011-02-04
Applicant: Christian Aalburg , Alexander Simpson , Vittorio Michelassi , Ismail Sezal
Inventor： Christian Aalburg , Alexander Simpson , Vittorio Michelassi , Ismail Sezal
IPC: F04D27/00
CPC classification number: F04D21/00 , F04D29/4213 , F04D29/441 , F04D29/5846 , F04D31/00 , F05D2250/51
Abstract: The present application provides for a wet gas compressor system. The wet gas compressor system may include a wet gas compressor with an inlet section. A variable cross-section nozzle may be positioned about the inlet section.
Abstract translation: 本申请提供了一种湿式气体压缩机系统。 湿式气体压缩机系统可以包括具有入口部分的湿式气体压缩机。 可变横截面喷嘴可以围绕入口部分定位。
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公开(公告)号：US08002524B2
公开(公告)日：2011-08-23
申请号：US12500648
申请日：2009-07-10
Applicant: Eric Eggleston , Christopher Wolfe , Eric John Ruggiero , Alexander Simpson , Rodrigo Rodriguez Erdmenger , Robbert Pannekeet
Inventor： Eric Eggleston , Christopher Wolfe , Eric John Ruggiero , Alexander Simpson , Rodrigo Rodriguez Erdmenger , Robbert Pannekeet
IPC: F03D7/02
CPC classification number: F03D7/042 , F03D7/0204 , F03D7/0224 , F05B2240/40 , F05B2260/71 , F05B2270/32 , F05B2270/336 , F05B2270/804 , G01P5/02 , Y02E10/723
Abstract: The present application provides a wind turbine system. The wind turbine system may include a number of blades, a number of wind speed sensors positioned on the blades, a controller in communication with the wind speed sensors, and one or more performance adjustment, mechanisms in communication with the controller. The controller activates the performance adjustment mechanisms in response to the wind speed sensors.
Abstract translation: 本申请提供了一种风力涡轮机系统。 风力涡轮机系统可以包括多个叶片，位于叶片上的多个风速传感器，与风速传感器通信的控制器以及与控制器通信的一个或多个性能调节机构。 控制器响应于风速传感器激活性能调节机构。
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公开(公告)号：US20100143118A1
公开(公告)日：2010-06-10
申请号：US12500648
申请日：2009-07-10
Applicant: Eric Eggleston , Christopher Wolfe , Eric John Ruggiero , Alexander Simpson , Rodrigo Rodriguez-Erdmenger , Robbert Pannekeet
Inventor： Eric Eggleston , Christopher Wolfe , Eric John Ruggiero , Alexander Simpson , Rodrigo Rodriguez-Erdmenger , Robbert Pannekeet
IPC: F03D7/04
CPC classification number: F03D7/042 , F03D7/0204 , F03D7/0224 , F05B2240/40 , F05B2260/71 , F05B2270/32 , F05B2270/336 , F05B2270/804 , G01P5/02 , Y02E10/723
Abstract: The present application provides a wind turbine system. The wind turbine system may include a number of blades, a number of wind speed sensors positioned on the blades, a controller in communication with the wind speed sensors, and one or more performance adjustment, mechanisms in communication with the controller. The controller activates the performance adjustment mechanisms in response to the wind speed sensors.
Abstract translation: 本申请提供了一种风力涡轮机系统。 风力涡轮机系统可以包括多个叶片，位于叶片上的多个风速传感器，与风速传感器通信的控制器以及与控制器通信的一个或多个性能调节机构。 控制器响应于风速传感器激活性能调节机构。
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公开(公告)号：US07582127B2
公开(公告)日：2009-09-01
申请号：US11670137
申请日：2007-02-01
Applicant: Robert Vacassy , Dinesh N. Khanna , Alexander Simpson
Inventor： Robert Vacassy , Dinesh N. Khanna , Alexander Simpson
CPC classification number: C09G1/02 , C09K3/1463 , C23F3/06 , H01L21/3212
Abstract: The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.
Abstract translation: 本发明提供了通过使用包含钨蚀刻剂，钨蚀刻抑制剂和水的组合物对包含钨的基材进行化学机械抛光的方法，其中所述钨抛光抑制剂是聚合物，共聚物或聚合物共混物，其包含在 至少一个包含至少一个含氮杂环或叔或季氮原子的重复基团。 本发明还提供了一种特别适用于抛光含钨衬底的化学机械抛光组合物。
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Patent Agency Ranking
公开(公告)号：US20070266641A1
公开(公告)日：2007-11-22
申请号：US11881338
申请日：2007-07-26
Applicant: Robert Vacassy , Dinesh Khanna , Alexander Simpson
Inventor： Robert Vacassy , Dinesh Khanna , Alexander Simpson
IPC: C09C1/68
CPC classification number: C09G1/02 , C09K3/1463 , C23F3/06 , H01L21/3212
Abstract: The invention provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates. The composition comprises a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom.
Abstract translation: 本发明提供了特别可用于抛光含钨基材的化学机械抛光组合物。 所述组合物包含钨蚀刻剂，钨蚀刻抑制剂和水，其中所述钨抛光抑制剂是包含至少一个包含至少一个含氮杂环或叔或三元杂环的重复基团的聚合物，共聚物或聚合物共混物， 季氮原子。
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公开(公告)号：US20050282391A1
公开(公告)日：2005-12-22
申请号：US10869397
申请日：2004-06-16
Applicant: Robert Vacassy , Dinesh Khanna , Alexander Simpson
Inventor： Robert Vacassy , Dinesh Khanna , Alexander Simpson
IPC: C09G1/02 , C09K3/14 , C23F3/06 , H01L21/321 , H01L21/302 , B44C1/22
CPC classification number: C09G1/02 , C09K3/1463 , C23F3/06 , H01L21/3212
Abstract: The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.
Abstract translation: 本发明提供了通过使用包含钨蚀刻剂，钨蚀刻抑制剂和水的组合物对包含钨的基材进行化学机械抛光的方法，其中所述钨抛光抑制剂是聚合物，共聚物或聚合物共混物，其包含在 至少一个包含至少一个含氮杂环或叔或季氮原子的重复基团。 本发明还提供了一种特别适用于抛光含钨衬底的化学机械抛光组合物。
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28.发明授权公开(公告)号：US06899597B2
公开(公告)日：2005-05-31
申请号：US10353733
申请日：2003-01-29
Applicant: Peter Wrschka , Alexander Simpson
Inventor： Peter Wrschka , Alexander Simpson
IPC: B24B37/04 , H01L21/321 , H01L21/768 , B24B1/00
CPC classification number: H01L21/3212 , B24B37/042 , H01L21/7684
Abstract: A semiconductive wafer having a layer of conductive material formed thereon is polished. The semiconductor wafer is rotated against an abrasive polishing pad. A solution is applied to the semiconductor wafer and to the abrasive polishing pad. The solution includes an etchant of the conductive material.
Abstract translation: 抛光其上形成有导电材料层的半导体晶片。 将半导体晶片旋转抵靠研磨抛光垫。 将解决方案应用于半导体晶片和研磨抛光垫。 该溶液包括导电材料的蚀刻剂。
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29.发明授权Defect-minimizing, topology-independent planarization of process surfaces in semiconductor devices 失效半导体器件中工艺表面的缺陷最小化，拓扑无关的平面化公开(公告)号：US06893968B2
公开(公告)日：2005-05-17
申请号：US10268148
申请日：2002-10-10
Applicant: Peter Lahnor , Alexander Simpson
Inventor： Peter Lahnor , Alexander Simpson
IPC: H01L21/3105 , H01L21/762 , H01L21/311
CPC classification number: H01L21/31053 , H01L21/76224
Abstract: A process for planarizing a process layer having structures and has been applied to a working surface of a semiconductor device, includes abrading the process layer down to the working surface using a polishing device. The working surface is planarized, and a defect density in the working surface is minimized and the polishing process is topology-independent.
Abstract translation: 用于平坦化具有结构并已被应用于半导体器件的工作表面的工艺层的工艺包括使用抛光装置将工艺层研磨到工作表面。 工作面平坦化，工作面的缺陷密度最小化，抛光过程与拓扑无关。
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公开(公告)号：US20050014454A1
公开(公告)日：2005-01-20
申请号：US10353733
申请日：2003-01-29
Applicant: Peter Wrschka , Alexander Simpson
Inventor： Peter Wrschka , Alexander Simpson
IPC: B24B37/04 , H01L21/321 , H01L21/768 , B24B1/00
CPC classification number: H01L21/3212 , B24B37/042 , H01L21/7684
Abstract: A semiconductive wafer having a layer of conductive material formed thereon is polished. The semiconductor wafer is rotated against an abrasive polishing pad. A solution is applied to the semiconductor wafer and to the abrasive polishing pad. The solution includes an etchant of the conductive material.
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