公开(公告)号：US06740539B2

公开(公告)日：2004-05-25

申请号：US10366149

申请日：2003-02-13

申请人： Richard A. Conti ,  Prakash Chimanlal Dev ,  David M. Dobuzinsky ,  Daniel C. Edelstein ,  Gill Y. Lee ,  Kia-Seng Low ,  Padraic C. Shafer ,  Alexander Simpson ,  Peter Wrschka

发明人： Richard A. Conti ,  Prakash Chimanlal Dev ,  David M. Dobuzinsky ,  Daniel C. Edelstein ,  Gill Y. Lee ,  Kia-Seng Low ,  Padraic C. Shafer ,  Alexander Simpson ,  Peter Wrschka

IPC分类号： H01L5140

CPC分类号： H01L21/28185 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28194 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

摘要翻译： 公开了一种在衬底上方具有碳分级层的绝缘体层的结构和方法，其中在衬底上方的每个连续的碳分级层中碳的浓度增加。 绝缘体包括介电常数小于3.3的低k电介质。 碳分级层增加了衬底和绝缘体之间以及绝缘体和导体层之间的粘合性。 该结构还可以包括碳分级层之间的稳定界面。 更具体地，碳分级层包括邻近基底的第一层，其碳含量在约5％至20％之间，第一层上方的碳含量在约10％至30％之间，第三层 在第二层上方具有约20％至40％的碳含量。

公开(公告)号：US06570256B2

公开(公告)日：2003-05-27

申请号：US09910380

申请日：2001-07-20

申请人： Richard A. Conti ,  Prakash Chimanlal Dev ,  David M. Dobuzinsky ,  Daniel C. Edelstein ,  Gill Y. Lee ,  Kia-Seng Low ,  Padraic C. Shafer ,  Alexander Simpson ,  Peter Wrschka

发明人： Richard A. Conti ,  Prakash Chimanlal Dev ,  David M. Dobuzinsky ,  Daniel C. Edelstein ,  Gill Y. Lee ,  Kia-Seng Low ,  Padraic C. Shafer ,  Alexander Simpson ,  Peter Wrschka

IPC分类号： H01L2348

CPC分类号： H01L21/28185 ,  H01L21/02126 ,  H01L21/02274 ,  H01L21/28194 ,  H01L21/31633 ,  H01L23/5329 ,  H01L23/53295 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L2924/0002 ,  H01L2924/00

摘要： A structure and method for an insulator layer having carbon-graded layers above a substrate is disclosed, wherein the concentration of carbon increases in each successive carbon-graded layer above the substrate. The insulator comprises a low-k dielectric having a dielectric constant less than 3.3. The carbon-graded layer increases adhesion between the substrate and the insulator and between the insulator and the conductor layer. The structure may also include stabilization interfaces between the carbon-graded layers. More specifically, the carbon-graded layers include a first layer adjacent the substrate having a carbon content between about 5% and 20%, a second layer above the first layer having a carbon content between about 10% and 30%, and a third layer above the second layer having a carbon content between about 20% and 40%.

摘要翻译： 公开了一种在衬底上方具有碳分级层的绝缘体层的结构和方法，其中在衬底上方的每个连续的碳分级层中碳的浓度增加。 绝缘体包括介电常数小于3.3的低k电介质。 碳分级层增加了衬底和绝缘体之间以及绝缘体和导体层之间的粘合性。 该结构还可以包括碳分级层之间的稳定界面。 更具体地，碳分级层包括邻近基底的第一层，其碳含量在约5％至20％之间，第一层上方的碳含量在约10％至30％之间，第三层 在第二层上方具有约20％至40％的碳含量。

公开(公告)号：US06899597B2

公开(公告)日：2005-05-31

申请号：US10353733

申请日：2003-01-29

申请人： Peter Wrschka ,  Alexander Simpson

发明人： Peter Wrschka ,  Alexander Simpson

IPC分类号： B24B37/04 ,  H01L21/321 ,  H01L21/768 ,  B24B1/00

CPC分类号： H01L21/3212 ,  B24B37/042 ,  H01L21/7684

摘要： A semiconductive wafer having a layer of conductive material formed thereon is polished. The semiconductor wafer is rotated against an abrasive polishing pad. A solution is applied to the semiconductor wafer and to the abrasive polishing pad. The solution includes an etchant of the conductive material.

摘要翻译： 抛光其上形成有导电材料层的半导体晶片。 将半导体晶片旋转抵靠研磨抛光垫。 将解决方案应用于半导体晶片和研磨抛光垫。 该溶液包括导电材料的蚀刻剂。

公开(公告)号：US20050014454A1

公开(公告)日：2005-01-20

申请号：US10353733

申请日：2003-01-29

申请人： Peter Wrschka ,  Alexander Simpson

发明人： Peter Wrschka ,  Alexander Simpson

IPC分类号： B24B37/04 ,  H01L21/321 ,  H01L21/768 ,  B24B1/00

CPC分类号： H01L21/3212 ,  B24B37/042 ,  H01L21/7684

摘要： A semiconductive wafer having a layer of conductive material formed thereon is polished. The semiconductor wafer is rotated against an abrasive polishing pad. A solution is applied to the semiconductor wafer and to the abrasive polishing pad. The solution includes an etchant of the conductive material.

公开(公告)号：US20100146967A1

公开(公告)日：2010-06-17

申请号：US12333841

申请日：2008-12-12

申请人： Alexander Simpson ,  Rodrigo Rodriguez Erdmenger

发明人： Alexander Simpson ,  Rodrigo Rodriguez Erdmenger

IPC分类号： F02B33/44

CPC分类号： F02B37/00 ,  F02B37/001 ,  F02M26/05 ,  F02M26/23 ,  Y02T10/144

摘要： A system, apparatus, and method for exhaust gas recirculation (EGR) is disclosed. The EGR apparatus includes an EGR circuit having an input configured to receive an exhaust gas from an engine exhaust port, an output configured to return the exhaust gas to an intake port of the engine, and an EGR path configured to circulate the exhaust gas between the input and the output. The EGR apparatus also includes an expansion turbine connected to the EGR circuit in the EGR path downstream of the input to receive the exhaust gas, the expansion turbine configured to expand the exhaust gas and reduce a pressure thereof. The EGR apparatus further includes an EGR compressor connected to the EGR path downstream of the expansion turbine and decoupled from the expansion turbine, the EGR compressor configured to compress the exhaust gas for circulation to the output.

摘要翻译： 公开了一种用于废气再循环（EGR）的系统，装置和方法。 EGR装置包括：EGR回路，其具有被配置为接收来自发动机排气口的废气的输入，被配置为将排气返回到发动机的进气口的输出;以及EGR路径，其被配置为使废气在 输入和输出。 EGR装置还包括在输入端下游的EGR路径中连接到EGR回路以接收废气的膨胀涡轮机，该膨胀涡轮机构造成膨胀排气并降低其压力。 EGR装置还包括连接到膨胀涡轮机下游的EGR路径并与膨胀涡轮分离的EGR压缩机，EGR压缩机构造成压缩排气以循环到输出端。

公开(公告)号：US20070214728A1

公开(公告)日：2007-09-20

申请号：US11670137

申请日：2007-02-01

申请人： Robert Vacassy ,  Dinesh Khanna ,  Alexander Simpson

发明人： Robert Vacassy ,  Dinesh Khanna ,  Alexander Simpson

IPC分类号： C09G1/00

CPC分类号： C09G1/02 ,  C09K3/1463 ,  C23F3/06 ,  H01L21/3212

摘要： The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.

摘要翻译： 本发明提供了通过使用包含钨蚀刻剂，钨蚀刻抑制剂和水的组合物对包含钨的基材进行化学机械抛光的方法，其中所述钨抛光抑制剂是聚合物，共聚物或聚合物共混物，其包含在 至少一个包含至少一个含氮杂环或叔或季氮原子的重复基团。 本发明还提供了一种特别适用于抛光含钨衬底的化学机械抛光组合物。

公开(公告)号：US06294470B1

公开(公告)日：2001-09-25

申请号：US09469922

申请日：1999-12-22

申请人： Laertis Economikos ,  Alexander Simpson

发明人： Laertis Economikos ,  Alexander Simpson

IPC分类号： H01L21302

CPC分类号： H01L21/31053

摘要： The invention provides slurry-less chemical-mechanical polishing processes which are effective in planarizing oxide materials, especially siliceous oxides, even where the starting oxide layer has significant topographical variation. The processes of the invention are preferably characterized by the use of a fixed abrasive polishing element and by use of an aqueous liquid medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide material on the substrate. The method reduces or eliminates the transfer of topographic variations to levels below the desired planarization level. The processes enable elimination of special endpoint detection techniques. The processes are also especially suitable for polishing interlevel dielectrics.

摘要翻译： 本发明提供无浆化学机械抛光方法，其有效平坦化氧化物材料，特别是硅氧化物，即使起始氧化物层具有显着的形貌变化。 本发明的方法优选的特征在于使用固定的研磨抛光元件，并且通过使用含有聚电解质的含水液体介质，用于抛光过程的至少一部分，包括减少跨越的地形变化量（高差） 衬底上的氧化物材料。 该方法减少或消除了地形变化的转移到低于期望的平坦化水平的水平。 这些过程能够消除特殊的端点检测技术。 该工艺也特别适用于抛光层间电介质。

公开(公告)号：US08408871B2

公开(公告)日：2013-04-02

申请号：US12138776

申请日：2008-06-13

申请人： Stefan Herr ,  Ryan Michael Leclair ,  Christopher Winslow ,  Alexander Simpson ,  Carlos Haertel ,  Thierry Maeder

发明人： Stefan Herr ,  Ryan Michael Leclair ,  Christopher Winslow ,  Alexander Simpson ,  Carlos Haertel ,  Thierry Maeder

IPC分类号： F01D7/001

CPC分类号： F03D7/0224 ,  F03D17/00 ,  F05B2270/321 ,  F05B2270/324 ,  F05B2270/328 ,  Y02E10/723

摘要： A method and an apparatus for measuring an air flow at an airfoil surface are provided, wherein at least one pressure sensor adapted to detect an air flow associated with a rotor blade surface and a pressure transducer which converts the detected air flow into an electrical signal indicating the air flow are provided. The pressure sensor is arranged within the boundary layer of the air flow at the airfoil surface such that the boundary layer profile may be determined from the electrical signal. The air flow sensor is adapted for rotor blades of a wind turbine to assist in adjusting a pitch angle of the rotor blades.

摘要翻译： 提供了一种用于测量翼型表面上的空气流量的方法和装置，其中至少一个适于检测与转子叶片表面相关联的气流的压力传感器和压力传感器，该压力传感器将检测到的空气流转换成指示 提供气流。 压力传感器被布置在翼型表面处的空气流的边界层内，使得边界层轮廓可以根据电信号确定。 空气流量传感器适用于风力涡轮机的转子叶片，以帮助调节转子叶片的桨距角。

公开(公告)号：US20100146968A1

公开(公告)日：2010-06-17

申请号：US12333886

申请日：2008-12-12

申请人： Alexander Simpson ,  Rodrigo Rodriguez Erdmenger

发明人： Alexander Simpson ,  Rodrigo Rodriguez Erdmenger

IPC分类号： F02M25/07 ,  F02B33/34 ,  F01D15/10 ,  F02B47/08

CPC分类号： F02B37/04 ,  F02B29/0406 ,  F02B37/001 ,  F02B39/10 ,  F02B47/10 ,  F02M26/05 ,  F02M26/23 ,  F02M26/28 ,  F02M26/34 ,  F02M26/36 ,  F02M26/39 ,  Y02T10/121 ,  Y02T10/144

摘要： A system, apparatus, and method for exhaust gas recirculation (EGR) is disclosed. The EGR apparatus includes an EGR circuit having an input configured to receive an exhaust gas from an engine exhaust port, an output configured to return the exhaust gas to an intake port of the engine, and an EGR path configured to circulate the exhaust gas between the input and the output. The EGR apparatus also includes an EGR compressor connected to the EGR circuit in the EGR path downstream of the input and EGR compressor configured to compress the exhaust gas for circulation to the output. The EGR apparatus further includes a valve system positioned in the EGR circuit and upstream of the EGR compressor to selectively cut off a flow of the exhaust gas to the EGR compressor and selectively inject ambient air into the EGR path.

摘要翻译： 公开了一种用于废气再循环（EGR）的系统，装置和方法。 EGR装置包括：EGR回路，其具有被配置为接收来自发动机排气口的废气的输入，被配置为将排气返回到发动机的进气口的输出;以及EGR路径，其被配置为使废气在 输入和输出。 EGR装置还包括连接到EGR路径的EGR压缩机，该EGR回路在输入和EGR压缩机的下游被配置为压缩废气以循环到输出端。 EGR装置还包括位于EGR回路中和EGR压缩机上游的阀系统，以选择性地切断排放到EGR压缩机的排气流并选择性地将环境空气注入到EGR通路中。

公开(公告)号：US06569769B1

公开(公告)日：2003-05-27

申请号：US09702311

申请日：2000-10-31

申请人： Laertis Economikos ,  Alexander Simpson ,  Ravikumar Ramachandran

发明人： Laertis Economikos ,  Alexander Simpson ,  Ravikumar Ramachandran

IPC分类号： H01L21302

CPC分类号： H01L21/31053

摘要： The invention provides slurry-less chemical-mechanical polishing processes which are effective in planarizing oxide materials, especially siliceous oxides, even where the starting oxide layer has significant topographical variation. The processes of the invention are preferably characterized by the use of a fixed abrasive polishing element and by use of an aqueous liquid medium containing a polyelectrolyte for at least a portion of the polishing process involving reduction in the amount of topographic variation (height differential) across the oxide material on the substrate. The method reduces or eliminates the transfer of topographic variations to levels below the desired planarization level. The processes enable elimination of special endpoint detection techniques. The processes are also especially suitable for polishing interlevel dielectrics.

摘要翻译： 本发明提供无浆化学机械抛光方法，其有效平坦化氧化物材料，特别是硅氧化物，即使起始氧化物层具有显着的形貌变化。 本发明的方法优选的特征在于使用固定的研磨抛光元件，并且通过使用含有聚电解质的含水液体介质，用于抛光过程的至少一部分，包括减少跨越的地形变化量（高差） 衬底上的氧化物材料。 该方法减少或消除了地形变化的转移到低于期望的平坦化水平的水平。 这些过程能够消除特殊的端点检测技术。 该工艺也特别适用于抛光层间电介质。