Abstract:
Memory cell structures and methods are described herein. One or more memory cells include a transistor having a charge storage node, a dielectric material positioned between the charge storage node and a channel region of the transistor, the channel region positioned between a source region and a drain region, and a first electrode of a diode coupled to the charge storage node.
Abstract:
Some embodiments include methods in which microwave radiation is used to activate dopant and/or increase crystallinity of semiconductor material during formation of a semiconductor construction. In some embodiments, the microwave radiation has a frequency of about 5.8 gigahertz, and a temperature of the semiconductor construction does not exceed about 500° C. during the exposure to the microwave radiation.
Abstract:
Devices are disclosed, such as those having a memory cell. The memory cell includes an active area formed of a semiconductor material; a first dielectric over the semiconductor material; a second dielectric comprising a material having a perovskite structure over the first dielectric; a third dielectric over the second dielectric; and a gate electrode over the third dielectric.
Abstract:
Select devices including an open volume that functions as a high bandgap material having a low dielectric constant are disclosed. The open volume may provide a more nonlinear, asymmetric I-V curve and enhanced rectifying behavior in the select devices. The select devices may comprise, for example, a metal-insulator-insulator-metal (MIIM) diode. Various methods may be used to form select devices and memory systems including such select devices. Memory devices and electronic systems include such select devices.
Abstract:
A hybrid localization method and a wireless network that performs the method are disclosed herein. In an embodiment of a hybrid localization technique, one or more sensor nodes in the network switch between different localization techniques depending on location area conditions. This technique chooses the most accurate localization technique for the given location area conditions, and thus potentially provides the best possible location accuracy for those conditions. A representative set of simulations and experiments verify the potential performance improvement realized with embodiments of the hybrid localization technique.
Abstract:
A diode and memory device including the diode, where the diode includes a conductive portion and another portion formed of a first material that has characteristics allowing a first decrease in a resistivity of the material upon application of a voltage to the material, thereby allowing current to flow there through, and has further characteristics allowing a second decrease in the resistivity of the first material in response to an increase in temperature of the first material.
Abstract:
Capacitors and methods of forming capacitors are disclosed, and which include an inner conductive metal capacitor electrode and an outer conductive metal capacitor electrode. A capacitor dielectric region is received between the inner and the outer conductive metal capacitor electrodes and has a thickness no greater than 150 Angstroms. Various combinations of materials of thicknesses and relationships relative one another are disclosed which enables and results in the dielectric region having a dielectric constant k of at least 35 yet leakage current no greater than 1×10−7 amps/cm2 at from −1.1V to +1.1V.
Abstract translation:公开了形成电容器的电容器和方法,其包括内部导电金属电容器电极和外部导电金属电容器电极。 电容器电介质区域被容纳在内导电金属电容电极和外导电金属电容器电极之间,并且具有不大于150埃的厚度。 公开了厚度和关系的材料的各种组合,其相互之间可以实现和导致电介质区域的介电常数k至少为35,而在-1.1V至-1.0V的范围内漏电流不大于1×10-7Aps / cm 2 + 1.1V。
Abstract:
Strontium ruthenium oxide provides an effective interface between a ruthenium conductor and a strontium titanium oxide dielectric. Formation of the strontium ruthenium oxide includes the use of atomic layer deposition to form strontium oxide and subsequent annealing of the strontium oxide to form the strontium ruthenium oxide. A first atomic layer deposition of strontium oxide is preformed using water as an oxygen source, followed by a subsequent atomic layer deposition of strontium oxide using ozone as an oxygen source.
Abstract:
A method of acknowledged communication in a network includes transmitting a message to at least one node of the network, wherein the message is transmitted in each of a plurality of broadcast rounds that overlap one another according to a predetermined broadcast schedule, receiving the message by the at least one node, and transmitting an acknowledgement of the message from the at least one node, wherein the acknowledgement is transmitted in each of a plurality of collection rounds that overlap one another according to a predetermined collection schedule.
Abstract:
A method for transmitting data from a sender node to a receiver node in a wireless network including (a) sampling a main network frequency and at least one backup frequency, (b) transmitting a message on the main network frequency without using a multiple access protocol, (c) transmitting the message on the main network frequency, using the multiple access protocol exchange, if an acknowledgement is not received, (d) transmitting the message on at least one backup frequency, using a multiple access protocol, if the main network frequency is busy after (c), (e) repeating (c) and (d) for a predefined number of time slots, until an acknowledgement is received, (f) transmitting the message on each backup frequency, using the multiple access protocol, until an acknowledgment is received, and (g) performing an exponential backoff and subsequent transmission of the message if an acknowledgement is still not received after (a) through (f).