公开(公告)号：US20110309490A1

公开(公告)日：2011-12-22

申请号：US12818890

申请日：2010-06-18

Applicant: Chen-Fa Lu ,  Chung-Shi Liu ,  Chen-Hua Yu ,  Wei-Yu Chen ,  Cheng-Ting Chen

Inventor： Chen-Fa Lu ,  Chung-Shi Liu ,  Chen-Hua Yu ,  Wei-Yu Chen ,  Cheng-Ting Chen

IPC: H01L23/498 ,  H01L21/60

CPC classification number: H01L24/13 ,  H01L23/293 ,  H01L23/3171 ,  H01L23/498 ,  H01L23/49816 ,  H01L23/49822 ,  H01L24/03 ,  H01L24/05 ,  H01L24/11 ,  H01L2224/0345 ,  H01L2224/03452 ,  H01L2224/03462 ,  H01L2224/0362 ,  H01L2224/03831 ,  H01L2224/03901 ,  H01L2224/0401 ,  H01L2224/05572 ,  H01L2224/05624 ,  H01L2224/05639 ,  H01L2224/05644 ,  H01L2224/05647 ,  H01L2224/05655 ,  H01L2224/05669 ,  H01L2224/1147 ,  H01L2224/11622 ,  H01L2224/1181 ,  H01L2224/1183 ,  H01L2224/11849 ,  H01L2224/11901 ,  H01L2224/13111 ,  H01L2224/13116 ,  H01L2224/93 ,  H01L2924/00014 ,  H01L2924/0002 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01019 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01084 ,  H01L2924/01322 ,  H01L2924/01327 ,  H01L2924/014 ,  H01L2924/12044 ,  H01L2924/14 ,  H01L2924/1434 ,  H01L2924/15311 ,  H01L2924/15788 ,  H01L2924/181 ,  H05K3/28 ,  H05K3/3478 ,  H05K3/4007 ,  H01L2224/11 ,  H01L2224/05552 ,  H01L2924/00 ,  H01L2924/1082

Abstract: A semiconductor device having a polymer layer and a method of fabricating the same is provided. A two-step plasma treatment for a surface of the polymer layer includes a first plasma process to roughen the surface of the polymer layer and loosen contaminants, and a second plasma process to make the polymer layer smoother or make the polymer layer less rough. An etch process may be used between the first plasma process and the second plasma process to remove the contaminants loosened by the first plasma process. In an embodiment, the polymer layer exhibits a surface roughness between about 1% and about 8% as measured by Atomic Force Microscopy (AFM) with the index of surface area difference percentage (SADP) and/or has surface contaminants of less than about 1% of Ti, less than about 1% of F, less than about 1.5% Sn, and less than about 0.4% of Pb.

Abstract translation: 提供了具有聚合物层的半导体器件及其制造方法。 用于聚合物层表面的两步等离子体处理包括使聚合物层的表面粗糙化并且使污染物松动的第一等离子体工艺，以及使聚合物层更平滑或使聚合物层变得粗糙的第二等离子体工艺。 可以在第一等离子体工艺和第二等离子体工艺之间使用蚀刻工艺，以除去由第一等离子体工艺松动的污染物。 在一个实施方案中，聚合物层通过原子力显微镜（AFM）测量的表面粗糙度在约1％至约8％之间，其表面积差异百分比（SADP）指数和/或具有小于约1的表面污染物 的Ti％，小于约1％的F，小于约1.5％的Sn和小于约0.4％的Pb。

公开(公告)号：US06692985B2

公开(公告)日：2004-02-17

申请号：US10163432

申请日：2002-06-07

Applicant: Chorng-Jye Huang ,  Lee Ching Kuo ,  Jyi Tyan Yeh ,  Chien Sheng Huang ,  Leo C. K. Liau ,  Shih-Chen Lin ,  Cheng-Ting Chen ,  Feng-Cheng Jeng

Inventor： Chorng-Jye Huang ,  Lee Ching Kuo ,  Jyi Tyan Yeh ,  Chien Sheng Huang ,  Leo C. K. Liau ,  Shih-Chen Lin ,  Cheng-Ting Chen ,  Feng-Cheng Jeng

IPC: H01L3118

CPC classification number: H01L31/03921 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/075 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547 ,  Y02E10/548 ,  Y02P70/521

Abstract: A solar cell substrate with thin film polysilicon. The solar cell substrate includes a substrate; a transparent conductive layer, formed on the substrate; a thermal isolation layer having inlaid conductive layers, formed on the transparent conductive layer; and a polysilicon layer, formed on the thermal isolation layer.

Abstract translation: 具有薄膜多晶硅的太阳能电池基板。 太阳能电池基板包括基板; 形成在基板上的透明导电层; 形成在所述透明导电层上的具有镶嵌导电层的热隔离层; 和形成在热隔离层上的多晶硅层。

公开(公告)号：US06277667B1

公开(公告)日：2001-08-21

申请号：US09391257

申请日：1999-09-07

Applicant: Chorng-Jye Huang ,  Cheng-Ting Chen ,  Chien-sheng Huang ,  Lee-Ching Kuo

Inventor： Chorng-Jye Huang ,  Cheng-Ting Chen ,  Chien-sheng Huang ,  Lee-Ching Kuo

IPC: H01L2100

CPC classification number: H01L31/022425 ,  H01L31/18 ,  Y02E10/50

Abstract: This invention discloses a novel method for fabricating solar cells. Using the existing screen-printing, masking or photolithography techniques, a P-type or N-type diffusion source is coated on the sites of an N-type or P-type silicon wafer desired for forming electrodes. Then, a low dose P-type or N-type diffusion source is in situ diffused into the N-type or P-type silicon wafer together with the P-type or N-type diffusion source coated on the N-type or P-type silicon wafer in the furnace. Thereafter, a P−/P+ or N−/N+ diffusion region is formed within the N-type or P-type silicon wafer. Finally, electrodes aligned to the P+ or N+ diffusion region are formed by means of screen-printing. Then, a solar cell with high photocurrent and low series resistance can be obtained.

Abstract translation: 本发明公开了一种制造太阳能电池的新方法。 使用现有的丝网印刷，掩模或光刻技术，在形成电极所需的N型或P型硅晶片的位置上涂覆P型或N型扩散源。 然后，将低剂量P型或N型扩散源原位扩散到N型或P型硅晶片以及涂覆在N型或P-型硅晶片上的P型或N型扩散源， 在炉中形成硅晶片。 此后，在N型或P型硅晶片内形成P- / P +或N- / N +扩散区。 最后，通过丝网印刷形成与P +或N +扩散区对准的电极。 然后，可以获得具有高光电流和低串联电阻的太阳能电池。