Color filters and their preparation
    1.
    发明授权
    Color filters and their preparation 失效
    滤色片及其制备

    公开(公告)号:US5502595A

    公开(公告)日:1996-03-26

    申请号:US253907

    申请日:1994-06-03

    IPC分类号: G02B5/28 G02B1/10 G02B5/22

    CPC分类号: G02B5/285

    摘要: A color filter comprising a transparent substrate and two or more multilayer films of amorphous silicon materials deposited on said substrate, each film being different, each layer of said two or more multi-layer films having a thickness less than the wavelength of the visible light and at least three layers of said two or more multi-layer films of amorphous silicon materials in an alternate arrangement wherein the amorphous silicon materials are selected from a-SiOx and a-SiNx is described. A method of preparing the color filter comprising depositing on the substrate by PECVD method two or more multilayer films is also described. The color filters prepared by PECVD method have a more compact texture and a better environmental resistant. The PECVD method for the preparation of the filters is more efficient than conventional methods.

    摘要翻译: 一种滤色器,包括透明基板和沉积在所述基板上的两个或更多个非晶硅材料多层膜,每个膜不同,所述两层或多层多层膜的每层的厚度均小于可见光的波长, 描述了至少三层所述两个或更多个非晶硅材料的多层薄膜,其中非晶硅材料选自a-SiOx和a-SiNx。 还描述了一种制备滤色器的方法,包括通过PECVD方法在基板上沉积两个或更多个多层膜。 通过PECVD方法制备的滤色片具有更紧凑的质感和更好的耐环境性。 用于制备过滤器的PECVD方法比常规方法更有效。

    Device for accessing a ROM unit with groups of memory module information saved therein
    2.
    发明授权
    Device for accessing a ROM unit with groups of memory module information saved therein 失效
    用于访问ROM单元的设备,其中保存有存储器模块信息的组

    公开(公告)号:US06396767B1

    公开(公告)日:2002-05-28

    申请号:US09725190

    申请日:2000-11-29

    IPC分类号: G11C800

    摘要: A device for accessing a ROM unit with groups of module information of memory modules saved therein. This invention saves plural groups of memory module information in a ROM unit, and applies a selecting circuit to indicate a memory module information to be loaded out. In an embodiment, the selecting circuit has a voltage divider circuit driven by the WP Pin of an IC, and a comparer or a converter to connect with the voltage divider circuit so as to produce a selecting signal, and then uses a decoder to transfer the selecting signal into a address number which will be used to read the selected memory module information from the ROM unit. In another embodiment, the selecting circuit has a plurality of fuses which are connected with plural output-pins of an IC, and multiplexers to optionally disconnect some fuses of the fuse circuit so as to generate kinds of different selecting signals. The selecting signals will then be decoded to locate the required memory module information from the ROM unit.

    摘要翻译: 一种用于访问ROM单元的装置,其中存储有存储模块的模块信息的组。 本发明将多组存储器模块信息存储在ROM单元中,并且施加选择电路以指示要加载的存储器模块信息。 在一个实施例中,选择电路具有由IC的WP引脚驱动的分压器电路,以及与分压器电路连接以产生选择信号的比较器或转换器,然后使用解码器将 将选择信号选择为将用于从ROM单元读取所选存储器模块信息的地址号。 在另一个实施例中,选择电路具有多个与IC的多个输出引脚连接的保险丝,以及多路复用器,可选择地断开熔丝电路的一些保险丝,以产生各种不同的选择信号。 然后将选择信号解码以从ROM单元定位所需的存储器模块信息。

    Method for fabricating solar cells
    4.
    发明授权
    Method for fabricating solar cells 有权
    制造太阳能电池的方法

    公开(公告)号:US06277667B1

    公开(公告)日:2001-08-21

    申请号:US09391257

    申请日:1999-09-07

    IPC分类号: H01L2100

    摘要: This invention discloses a novel method for fabricating solar cells. Using the existing screen-printing, masking or photolithography techniques, a P-type or N-type diffusion source is coated on the sites of an N-type or P-type silicon wafer desired for forming electrodes. Then, a low dose P-type or N-type diffusion source is in situ diffused into the N-type or P-type silicon wafer together with the P-type or N-type diffusion source coated on the N-type or P-type silicon wafer in the furnace. Thereafter, a P−/P+ or N−/N+ diffusion region is formed within the N-type or P-type silicon wafer. Finally, electrodes aligned to the P+ or N+ diffusion region are formed by means of screen-printing. Then, a solar cell with high photocurrent and low series resistance can be obtained.

    摘要翻译: 本发明公开了一种制造太阳能电池的新方法。 使用现有的丝网印刷,掩模或光刻技术,在形成电极所需的N型或P型硅晶片的位置上涂覆P型或N型扩散源。 然后,将低剂量P型或N型扩散源原位扩散到N型或P型硅晶片以及涂覆在N型或P-型硅晶片上的P型或N型扩散源, 在炉中形成硅晶片。 此后,在N型或P型硅晶片内形成P- / P +或N- / N +扩散区。 最后,通过丝网印刷形成与P +或N +扩散区对准的电极。 然后,可以获得具有高光电流和低串联电阻的太阳能电池。

    Amorphous silicon color detector and manufacture of same
    5.
    发明授权
    Amorphous silicon color detector and manufacture of same 失效
    非晶硅色彩检测仪及其制造

    公开(公告)号:US5789263A

    公开(公告)日:1998-08-04

    申请号:US475191

    申请日:1995-06-07

    CPC分类号: H01L31/101 H01L31/108

    摘要: An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 .mu.m, and the metal layer is made of a metals selected from the metal group consisting of Cr, Au, Pd, Al, Pt, Mo, Ag or Ti. A depletion region of the color detector is re-arranged in position and in content thereof according to the absorbencies to different color lights in different bias voltages to achieve the purpose of detecting different color light. An amorphous silicone color image sensor comprises a plurality of the color detectors arranged in linear array incorporated with a scanning device, a processor and an A/D converter to process the signals obtained from scanning. The amorphous silicone color image sensor is especially used in a scanning machine or a fax machine. A manufacture process of the amorphous silicon color detector is also disclosed.

    摘要翻译: 一种非晶硅色彩检测器,包括由透明导电氧化膜(TCO)层/ a-Si:H层/金属层构成的结构,其中a-Si:H层是非晶硅层,其厚度大于 并且金属层由选自Cr,Au,Pd,Al,Pt,Mo,Ag或Ti的金属组成的金属制成。 根据对不同偏置电压中的不同颜色光的吸光度,颜色检测器的耗尽区域被重新布置在其位置和内容上,以达到检测不同颜色光的目的。 非晶硅彩色图像传感器包括多个彩色检测器,其布置成并入扫描装置的线性阵列,处理器和A / D转换器,以处理从扫描获得的信号。 无定形硅胶彩色图像传感器特别用于扫描机或传真机。 还公开了非晶硅色彩检测器的制造方法。

    Method of manufacturing light converter with amorphous-silicon pin
heterojunction diode
    7.
    发明授权
    Method of manufacturing light converter with amorphous-silicon pin heterojunction diode 失效
    制造具有非晶硅pin异质结二极管的光转换器的方法

    公开(公告)号:US5604136A

    公开(公告)日:1997-02-18

    申请号:US452313

    申请日:1995-05-26

    摘要: A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 kf.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

    摘要翻译: 制造具有LED和非晶硅pin异质结二极管的光转换器的方法包括以下步骤:a)在衬底的一侧上制备作为发光单元的LED结构; b)在衬底的另一侧上形成缓冲层; 和c)在缓冲层上沉积一个引脚(正型/本征型/负型)二极管作为该蓝/红光转换器的光吸收单元,并且在1kf欧米茄时获得的上升时间值为112.5μsec。 本发明希望降低成本,简化制备过程,并且避免在制备pin二极管的过程中通过过热导致光转换单元的劣化。

    Amorphous silicon color detector
    8.
    发明授权
    Amorphous silicon color detector 失效
    非晶硅色检测仪

    公开(公告)号:US5449923A

    公开(公告)日:1995-09-12

    申请号:US861294

    申请日:1992-03-31

    CPC分类号: H01L31/101 H01L31/108

    摘要: An amorphous silicon color detector comprising a structure composed of a transparent conductive oxide film (TCO) layer/an a-Si:H layer/a metal layer, of which the a-Si:H layer is an amorphous silicone layer having a thickness greater than 1 .mu.m, and the metal layer is made of a metals selected from the metal group consisting of Cr, Au, Pd, Al, Pt, Mo, Ag or Ti. A depletion region of the color-detector is re-arranged in position and in content thereof according to the absorbencies to different color lights in different bias voltages to achieve the purpose of detecting different color light. An amorphous silicone color image sensor comprises a plurality of the color detectors arranged in linear array incorporated with a scanning device, a processor and an A/D converter to process the signals obtained from scanning. The amorphous silicone color image sensor is especially used in a scanning machine or a fax machine. A manufacture process of the amorphous silicon color detector is also disclosed.

    摘要翻译: 一种非晶硅色彩检测器,包括由透明导电氧化膜(TCO)层/ a-Si:H层/金属层构成的结构,其中a-Si:H层是非晶硅层,其厚度大于 并且金属层由选自Cr,Au,Pd,Al,Pt,Mo,Ag或Ti的金属组成的金属制成。 颜色检测器的耗尽区根据对不同偏置电压中的不同颜色光的吸光度重新排列在其位置和内容上,以达到检测不同颜色光的目的。 非晶硅彩色图像传感器包括多个彩色检测器,其布置成并入扫描装置的线性阵列,处理器和A / D转换器,以处理从扫描获得的信号。 无定形硅胶彩色图像传感器特别用于扫描机或传真机。 还公开了非晶硅色彩检测器的制造方法。

    Dust-proof and weather resistant photovoltaic module and fabricating method thereof
    9.
    发明授权
    Dust-proof and weather resistant photovoltaic module and fabricating method thereof 有权
    防尘防风光伏模块及其制造方法

    公开(公告)号:US06291762B1

    公开(公告)日:2001-09-18

    申请号:US09456640

    申请日:1999-12-08

    IPC分类号: H01L31042

    摘要: The present invention discloses a dust-proof and weather resistant photovoltaic module, including (a) a front substrate of light transmittable safety glass plate, wherein a photo-catalyst composition is applied to the safety glass plate; (b) a back substrate of weather resistant polyester polymer; and (c) a photosensitizer including electrical circuit copper foils and polymeric enclosing material (EVA) which is located between the front substrate and the back substrate. The method for fabricating a front substrate of a photovoltaic module includes applying a photo-catalyst composition onto a safety glass plate; evaporating the photo-catalyst composition to a gel; and seating the gel to Rutile titanium dioxide. The photo-catalyst composition includes a metal oxide, an acid regent and a surfactant.

    摘要翻译: 本发明公开了一种防尘防风光伏模块,包括(a)可透光安全玻璃板的前基板,其中将光催化剂组合物施加到安全玻璃板上; (b)耐候性聚酯聚合物的背面基材; 和(c)光敏剂,其包括位于前基板和后基板之间的电路铜箔和聚合物封闭材料(EVA)。 制造光伏组件的前基板的方法包括将光催化剂组合物涂覆在安全玻璃板上; 将光催化剂组合物蒸发成凝胶; 并将凝胶置于金红石二氧化钛上。 光催化剂组合物包括金属氧化物,酸摄取剂和表面活性剂。

    Method of manufacturing light converter with amorphous-silicon pin
heterojunction diode
    10.
    发明授权
    Method of manufacturing light converter with amorphous-silicon pin heterojunction diode 失效
    制造具有非晶硅pin异质结二极管的光转换器的方法

    公开(公告)号:US5714772A

    公开(公告)日:1998-02-03

    申请号:US690675

    申请日:1996-07-31

    摘要: A method of manufacturing a light converter with an LED and an amorphous-silicon pin heterojunction diode includes steps of a) preparing an LED structure on one side of a substrate as a light-emitting unit; b) forming a buffer layer on the other side of the substrate; and c) depositing a pin (positive type/intrinsic type/negative type) diode on the buffer layer as a light-absorbing unit this blue/red light converter, and the value of rise time obtained under 1 k.OMEGA. is 112.5 .mu.sec. The present invention desirably lower the cost, simplify the preparation process, and avoids degrading features of a light converting unit by over-heating during the process of preparing the pin diode.

    摘要翻译: 制造具有LED和非晶硅pin异质结二极管的光转换器的方法包括以下步骤:a)在衬底的一侧上制备作为发光单元的LED结构; b)在衬底的另一侧上形成缓冲层; 以及c)在缓冲层上沉积一个引脚(正型/本征型/负型)二极管作为该蓝/红光转换器的光吸收单元,并且在1k欧米茄下获得的上升时间值为112.5微秒。 本发明希望降低成本,简化制备过程,并且避免在制备pin二极管的过程中通过过热导致光转换单元的劣化。