公开(公告)号：US07433032B2

公开(公告)日：2008-10-07

申请号：US11253028

申请日：2005-10-17

Applicant: Joung-Soo Kim ,  Sang-Mun Chon ,  Chung-Sam Jun ,  Yu-Sin Yang

Inventor： Joung-Soo Kim ,  Sang-Mun Chon ,  Chung-Sam Jun ,  Yu-Sin Yang

IPC: G01B15/00 ,  G01N21/00

CPC classification number: G01N21/95607 ,  G01N21/21 ,  G01N21/47

Abstract: In a method of inspecting defects, a first actual region of an actual object is inspected based on a first characteristic parameter as an inspection condition. A point where an inspection region of the actual object is changed into a second actual region from the first actual region is determined. The second actual region is then inspected based on a second characteristic parameter as the inspection condition. The first and second parameters may include contrast of a light that is reflected from a reference object, intensity of the light, brightness of the light, a size of a minute structure on the reference object, etc. The characteristic parameters of each reference region on the reference object are set. Thus, the defects may be accurately classified so that a time and a cost for reviewing the defects may be markedly reduced.

Abstract translation: 在检查缺陷的方法中，基于作为检查条件的第一特征参数来检查实际物体的第一实际区域。 确定实际物体的检查区域从第一实际区域变为第二实际区域的点。 然后基于作为检查条件的第二特征参数检查第二实际区域。 第一和第二参数可以包括从参考对象反射的光的对比度，光的强度，光的亮度，参考对象上的微小结构的大小等。每个参考区域的特征参数在 参考对象被设置。 因此，可以将缺陷精确地分类，从而可以显着降低检查缺陷的时间和成本。

公开(公告)号：US07271890B2

公开(公告)日：2007-09-18

申请号：US10903852

申请日：2004-07-30

Applicant: Joung-Soo Kim ,  Yu-Sin Yang ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

Inventor： Joung-Soo Kim ,  Yu-Sin Yang ,  Moon-Kyung Kim ,  Sang-Mun Chon ,  Sun-Yong Choi ,  Chung-Sam Jun

IPC: G01N21/00

CPC classification number: G01N21/9501 ,  G01N21/55

Abstract: In a method for inspecting a defect in accordance with one aspect of the present invention, an object is divided into a plurality of regions. Reflectivity of each of the plurality of regions is obtained. Amplification ratio for each region is determined using the reflectivity. A light is irradiated onto the regions. A light reflected from a first region is amplified by a first amplification ratio that is determined for the first region. Moving the irradiated light from the first region to a second region is detected. A light reflected from the second region is amplified by a second amplification ratio that is determined for the second region. The amplified lights from the first region and the second region are analyzed to determine an existence of a defect on the object.

Abstract translation: 在根据本发明的一个方面的用于检查缺陷的方法中，对象被分成多个区域。 获得多个区域中的每一个的反射率。 使用反射率确定每个区域的放大率。 光照射到这些区域上。 从第一区域反射的光被第一区域确定的第一放大率放大。 检测到将照射的光从第一区域移动到第二区域。 从第二区域反射的光被第二区域确定的第二放大率放大。 分析来自第一区域和第二区域的放大的光以确定物体上存在缺陷。

公开(公告)号：US20070188185A1

公开(公告)日：2007-08-16

申请号：US11710543

申请日：2007-02-26

Applicant: Tae-Min Eom ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Yun-Jung Jee

Inventor： Tae-Min Eom ,  Chung-Sam Jun ,  Yu-Sin Yang ,  Yun-Jung Jee

IPC: G01R31/26

CPC classification number: G01R31/1263

Abstract: A method of inspecting a leakage current of a dielectric layer on a substrate including a cell array region having a plurality of cell blocks including a patterned structure, the dielectric layer formed on the patterned structure, and a peripheral circuit region includes depositing a corona ion charge on a cell block selected from the plurality of cell blocks and measuring a variance of a surface voltage caused by a leakage current through the dielectric layer on the selected cell block. The variance of the surface voltage is compared with reference data to determine a leakage current characteristic of the dielectric layer.

Abstract translation: 一种在包括具有包括图案化结构的多个单元块，形成在图案化结构上的电介质层和外围电路区域的单元阵列区域的基板上检查介质层的漏电流的方法，包括沉积电晕离子电荷 在从所述多个单元块中选择的单元块上测量由所选择的单元块上的介电层的漏电流引起的表面电压的方差。 将表面电压的方差与参考数据进行比较，以确定电介质层的漏电流特性。

公开(公告)号：US20070184565A1

公开(公告)日：2007-08-09

申请号：US11566637

申请日：2006-12-04

Applicant: Hwan-Shik PARK ,  Sung-Gon KIM ,  Chung-Sam JUN ,  Kye-Weon KIM ,  Jang-Ik PARK ,  Won-Kwan SONG

Inventor： Hwan-Shik PARK ,  Sung-Gon KIM ,  Chung-Sam JUN ,  Kye-Weon KIM ,  Jang-Ik PARK ,  Won-Kwan SONG

IPC: H01L21/66

CPC classification number: H01L22/12

Abstract: Embodiments of a test pattern and a method for measuring silicon etching depth are provided. After a contact-hole forming process, an optical critical dimension (OCD) is measured with respect to a test pattern formed on a semiconductor chip, so that the silicon etching depth may be analyzed in real time. Critical dimensions of contact holes in the actual working cells of the semiconductor circuit would then coincide with the OCD measurement of the contact holes of the test pattern. Consequently, etching conditions for forming a contact hole may be controlled in real time, and thus a yield of a semiconductor can be effectively improved.

Abstract translation: 提供测试图案的实施例和测量硅蚀刻深度的方法。 在接触孔形成处理之后，相对于形成在半导体芯片上的测试图案测量光临界尺寸（OCD），使得可以实时分析硅蚀刻深度。 半导体电路的实际工作单元中的接触孔的临界尺寸将与测试图案的接触孔的OCD测量重合。 因此，可以实时地控制用于形成接触孔的蚀刻条件，从而可以有效地提高半导体的产量。

公开(公告)号：US20070031025A1

公开(公告)日：2007-02-08

申请号：US11463281

申请日：2006-08-08

Applicant: Jung-Taek Lim ,  Chung-Sam Jun ,  Young-Jee Yoon ,  Sung-Hong Park

Inventor： Jung-Taek Lim ,  Chung-Sam Jun ,  Young-Jee Yoon ,  Sung-Hong Park

IPC: G06K9/00

CPC classification number: G06T7/001 ,  G06T2207/30148 ,  H01J2237/2817

Abstract: In an embodiment of a method of inspecting a substrate, the substrate on which minute structures are formed is divided into a plurality of inspection regions. A main inspection region among the inspection regions is selected. A main image of the main inspection region and sub-images of sub-inspection regions adjacent to the main inspection region are obtained. An average image of the main image and the sub-images is obtained. The average image is then compared with the main image to detect defects in the main inspection region. Gray levels may be used. The average image may have improved quality so that the defects in the selected inspection region may be rapidly and accurately detected. This process has an improved reliability. Further, the number of inspecting processes for the substrate may be reduced. And a line for the inspection process may be automated so that a worker-free line may be established.

Abstract translation: 在检查基板的方法的实施例中，其上形成有微小结构的基板被分成多个检查区域。 选择检验区域的主要检验区域。 获得主检查区域的主要图像和与主检查区域相邻的副检查区域的子图像。 获得主图像和子图像的平均图像。 然后将平均图像与主图像进行比较，以检测主检查区域中的缺陷。 可以使用灰度级。 平均图像可以具有改进的质量，使得可以快速和准确地检测所选择的检查区域中的缺陷。 该过程具有改进的可靠性。 此外，可以减少基板的检查过程的数量。 并且检查过程的一行可以是自动化的，从而可以建立无工人行。

公开(公告)号：US20060039598A1

公开(公告)日：2006-02-23

申请号：US11207772

申请日：2005-08-22

Applicant: Kye-Weon Kim ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Sang-Mun Chon ,  Seong-Jin Kim ,  Byung-Sug Lee ,  Yu-Sin Yang

Inventor： Kye-Weon Kim ,  Chung-Sam Jun ,  Ki-Suk Chung ,  Sang-Mun Chon ,  Seong-Jin Kim ,  Byung-Sug Lee ,  Yu-Sin Yang

IPC: G06K9/00

CPC classification number: G01N21/21 ,  G01N21/33 ,  G01N21/9501 ,  G01N21/95607 ,  G01N2021/95615

Abstract: A method of inspecting an inspection pattern using a statistical inference function is disclosed. The inference function is generated in relation to optical reference signal data and reference pattern characteristic data for a plurality of reference patterns formed by a unit process of interest on reference substrates.

Abstract translation: 公开了使用统计推断功能检查检查图案的方法。 关于由参考基板上的感兴趣单元处理形成的多个参考图案的光参考信号数据和参考图案特征数据，产生推理函数。

公开(公告)号：US20060029286A1

公开(公告)日：2006-02-09

申请号：US11198314

申请日：2005-08-08

Applicant: Jung-Taek Lim ,  Hyo-Cheon Kang ,  Chung-Sam Jun ,  Dong-Chun Lee ,  Byoung-Ho Lee

Inventor： Jung-Taek Lim ,  Hyo-Cheon Kang ,  Chung-Sam Jun ,  Dong-Chun Lee ,  Byoung-Ho Lee

IPC: G06K9/40

CPC classification number: G06T5/50 ,  G01N23/225 ,  G06T5/002 ,  G06T5/003 ,  G06T5/20 ,  G06T2207/10061 ,  G06T2207/20032 ,  G06T2207/20192 ,  G06T2207/30148 ,  H01J2237/221 ,  H01J2237/2802

Abstract: An image processing method is disclosed. The method comprises capturing a plurality of images of a sample using a scanning electron microscope (SEM). The method further comprising computing a mean value for each pixel location in the plurality of images and forming an integrated image with the mean values. The method further comprises filtering the integrated image using a median filter.

Abstract translation: 公开了一种图像处理方法。 该方法包括使用扫描电子显微镜（SEM）捕获样品的多个图像。 该方法还包括计算多个图像中的每个像素位置的平均值，并形成具有平均值的积分图像。 该方法还包括使用中值滤波器对集成图像进行滤波。

公开(公告)号：US20050221740A1

公开(公告)日：2005-10-06

申请号：US11016247

申请日：2004-12-20

Applicant: Tae-Kyoung Kim ,  Yun-Jung Jee ,  Kyoung-Su Shin ,  Chung-Sam Jun

Inventor： Tae-Kyoung Kim ,  Yun-Jung Jee ,  Kyoung-Su Shin ,  Chung-Sam Jun

IPC: H01L21/68 ,  B24B5/00 ,  H01L21/677 ,  H01L21/683 ,  H01L21/687

CPC classification number: H01L21/68785 ,  H01L21/6776

Abstract: The present invention is directed to a wafer holder and a related wafer conveyor system. The wafer holder holds a wafer and moves horizontally within a chamber. A contact area between the wafer and the wafer holder is reduced, and potential contaminants generated by ear between components of the wafer holder are trapped by an airtight cover. Since the wafer holder moves horizontally while being fixed to a guide rail, the wafer conveyor system reduces friction between the guide rail and the wafer holder.

Abstract translation: 本发明涉及晶片保持器和相关的晶片输送系统。 晶片保持器保持晶片并且在腔室内水平移动。 晶片和晶片保持架之间的接触面积减小，并且由晶片保持器的部件之间的耳朵产生的潜在的污染物被气密的盖子所困住。 由于晶片保持架在固定到导轨的同时水平移动，所以晶片传送系统减小了导轨和晶片保持器之间的摩擦。

公开(公告)号：US20050134867A1

公开(公告)日：2005-06-23

申请号：US11012005

申请日：2004-12-13

Applicant: Koung-Su Shin ,  Kwang-Jun Yoon ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Dong-Jin Park

Inventor： Koung-Su Shin ,  Kwang-Jun Yoon ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Dong-Jin Park

IPC: H01L21/66 ,  G03F7/20 ,  G01B11/14

CPC classification number: G03F7/70616

Abstract: A system and method of measuring a distance of semiconductor patterns is provided. The system includes a microscope and a control unit. The control unit calculates standard coordinates of standard points in view-fields that include spots, spot coordinates of spots with respect to standard points, real coordinates of spots from both of the standard coordinates and spot coordinates, and finally the distance between the two spots from the first and second real coordinates. Coordinates are determined using high magnification, in conjunction with pixel counting, allowing more precise distance measurements.

Abstract translation: 提供了测量半导体图形的距离的系统和方法。 该系统包括显微镜和控制单元。 控制单元计算包括斑点，相对于标准点的点的点坐标，来自两个标准坐标和点坐标的点的实际坐标的视场中的标准点的标准坐标，以及最后两个点之间的距离 第一个和第二个实际坐标。 使用高倍率，结合像素计数确定坐标，允许更精确的距离测量。

公开(公告)号：US20050083539A1

公开(公告)日：2005-04-21

申请号：US10912559

申请日：2004-08-06

Applicant: Hwan-Shik Park ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kye-Weon Kim

Inventor： Hwan-Shik Park ,  Sun-Yong Choi ,  Chung-Sam Jun ,  Kye-Weon Kim

IPC: G01B11/06 ,  G01B11/28

CPC classification number: G01B11/06

Abstract: An apparatus and method of measuring the thickness of a substrate. A first light is reflected from a standard sample having a known thickness. The light is concentrated through the light-focusing lens. The first light is converted into a first electrical signal by a detector responding to a light intensity of the concentrated first light. A second light is reflected from a substrate, and then is concentrated through the light-focusing lens. The second light is converted into a second electrical signal by the detector responding to a light intensity of the concentrated second light. An operating unit determines first and second peak values from the first and second electrical signals, respectively. The operating unit calculates the thickness of the substrate by using a standard distance corresponding to the first peak value, a moving distance of the substrate corresponding to the second peak value, and the known thickness of the standard sample.

Abstract translation: 一种测量衬底厚度的装置和方法。 第一光从具有已知厚度的标准样品反射。 光通过光聚焦透镜集中。 通过响应于集中的第一光的光强度的检测器将第一光转换成第一电信号。 第二个光从衬底反射，然后通过光聚焦透镜进行浓缩。 通过检测器响应于集中的第二光的光强度将第二光转换成第二电信号。 操作单元分别从第一和第二电信号确定第一和第二峰值。 操作单元通过使用与第一峰值相对应的标准距离，对应于第二峰值的基板的移动距离和标准样品的已知厚度来计算基板的厚度。