公开(公告)号：US20100268873A1

公开(公告)日：2010-10-21

申请号：US12824754

申请日：2010-06-28

Applicant: Ben Wei Chen ,  David Hong-Dien Chen ,  David Sun

Inventor： Ben Wei Chen ,  David Hong-Dien Chen ,  David Sun

IPC: G06F12/02

CPC classification number: G11C16/30 ,  G11C16/20

Abstract: A Flash memory controller is disclosed. The Flash memory controller comprises a host interface, a Flash memory interface, controller logic coupled between the host interface, the controller logic handling a plurality of voltages. The controller also includes a mechanism for allowing a multiple voltage host to interface with a high voltage or a multiple voltage Flash memory. A multiple voltage Flash memory controller in accordance with the present invention provides the following advantages over conventional Flash memory controllers: (1) a voltage host is allowed to interface with multiple Flash memory components that operate at different voltages in any combination; (2) power consumption efficiency is improved by integrating the programmable voltage regulator, and voltage comparator mechanism with the Flash memory controller; (3) External jumper selection is eliminated for power source configuration; and (4) Flash memory controller power source interface pin-outs are simplified.

Abstract translation: 公开了一种闪存控制器。 闪存控制器包括主机接口，闪存接口，耦合在主机接口之间的控制器逻辑，处理多个电压的控制器逻辑。 控制器还包括允许多电压主机与高电压或多电压闪存接口的机构。 根据本发明的多电压闪速存储器控制器提供了比传统闪存控制器以下的优点：（1）允许电压主机与在任何组合中以不同电压工作的多个闪存组件进行接口; （2）通过将可编程稳压器和电压比较器机构与闪存控制器集成来提高功耗效率; （3）电源配置消除外部跳线选择; 和（4）闪存控制器电源接口引脚简化。

公开(公告)号：US07760574B2

公开(公告)日：2010-07-20

申请号：US11937451

申请日：2007-11-08

Applicant: Ben Wei Chen ,  David Hong-Dien Chen ,  David Sun

Inventor： Ben Wei Chen ,  David Hong-Dien Chen ,  David Sun

IPC: G11C5/14

CPC classification number: G11C16/30 ,  G11C16/20

Abstract: A Flash memory controller is disclosed. The Flash memory controller comprises a host interface, a Flash memory interface, controller logic coupled between the host interface the controller logic handling a plurality of voltages. The controller also includes a mechanism for allowing a multiple voltage host to interface with a high voltage or a multiple voltage Flash memory. A multiple voltage Flash memory controller in accordance with the present invention provides the following advantages over conventional Flash memory controllers: (1) a voltage host is allowed to interface with multiple Flash memory components that operate at different voltages in any combination; (2) power consumption efficiency is improved by integrating the programmable voltage regulator, and voltage comparator mechanism with the Flash memory controller; (3) External jumper selection is eliminated for power source configuration; and (4) Flash memory controller power source interface pin-outs are simplified.

Abstract translation: 公开了一种闪存控制器。 闪存控制器包括主机接口，闪存接口，耦合在主机接口之间的控制器逻辑，控制器逻辑处理多个电压。 控制器还包括允许多电压主机与高电压或多电压闪存接口的机构。 根据本发明的多电压闪速存储器控制器提供了比传统闪存控制器以下的优点：（1）允许电压主机与在任何组合中以不同电压工作的多个闪存组件进行接口; （2）通过将可编程稳压器和电压比较器机构与闪存控制器集成来提高功耗效率; （3）电源配置消除外部跳线选择; 和（4）闪存控制器电源接口引脚简化。

公开(公告)号：US07659610B2

公开(公告)日：2010-02-09

申请号：US12181721

申请日：2008-07-29

Applicant: Ben Wei Chen ,  David Hong-Dien Chen ,  Jason Japen Chen

Inventor： Ben Wei Chen ,  David Hong-Dien Chen ,  Jason Japen Chen

IPC: H01L23/02

CPC classification number: H01L25/18 ,  H01L23/5387 ,  H01L23/5388 ,  H01L24/48 ,  H01L24/49 ,  H01L25/0657 ,  H01L2224/05553 ,  H01L2224/32145 ,  H01L2224/48091 ,  H01L2224/48137 ,  H01L2224/48145 ,  H01L2224/48227 ,  H01L2224/48235 ,  H01L2224/49175 ,  H01L2225/06506 ,  H01L2225/0651 ,  H01L2225/06527 ,  H01L2225/06562 ,  H01L2225/06572 ,  H01L2225/06575 ,  H01L2225/06579 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/10161 ,  H01L2924/15173 ,  H01L2924/15192 ,  H01L2924/19107 ,  H01L2924/00 ,  H01L2224/45099 ,  H01L2224/05599 ,  H01L2924/00012

Abstract: A Flash memory card is disclosed comprising a substrate, a Flash memory die on top of the substrate, a controller die on top of the Flash memory die, and an interposer coupled to with the controller die and on top of the Flash memory die wherein the interposer results in substantial reduced wire bonding to the substrate. The interposer can surround or be placed side by side with the controller die. A system and method in accordance with the present invention achieves the following objectives: (1) takes advantage of as large of a Flash memory die as possible, to increase the density of the Flash card by reducing the number of wire bond pads on the substrate and enabling insertion of the largest die possible that can fit inside a given card interior boundary; (2) more efficiently stacks Flash memory dies to increase density of the Flash card; and (3) has a substantially less number of bonding wires to the substrate as possible, to improve production yield.

Abstract translation: 公开了一种闪存卡，其包括衬底，在衬底顶部的闪存存储器管芯，在闪存存储器管芯的顶部上的控制器管芯，以及与控制器管芯连接并且在闪存管芯的顶部上的插入器，其中， 插入器导致大大减少了与基板的引线接合。 插入器可以围绕或与控制器管芯并排放置。 根据本发明的系统和方法实现了以下目的：（1）尽可能地利用尽可能大的闪存存储器管芯，通过减少衬底上的引线接合焊盘的数量来增加闪存卡的密度 并且能够插入可以装配在给定卡内部边界内的最大的模具; （2）更有效地堆叠闪存芯片以增加闪存卡的密度; 和（3）尽可能少的与基板的接合线数量，以提高产量。

公开(公告)号：US20090283313A1

公开(公告)日：2009-11-19

申请号：US12507771

申请日：2009-07-22

Applicant: Ben Wei CHEN ,  Jin S. WANG ,  David Hong-Dien CHEN

Inventor： Ben Wei CHEN ,  Jin S. WANG ,  David Hong-Dien CHEN

IPC: H05K1/18 ,  H01L21/56

CPC classification number: B29C45/14647 ,  B29C45/14655 ,  B29C45/14836 ,  B29C45/2708 ,  H01L21/565 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2924/19105 ,  H01L2924/30107 ,  H05K1/117 ,  H05K3/284 ,  H05K2201/10159 ,  H05K2201/10689 ,  H05K2201/10734 ,  H05K2203/1311 ,  H05K2203/1316 ,  H05K2203/304 ,  H01L2924/00014 ,  H01L2924/00

Abstract: A shape-molding structure of a memory card comprises a circuit substrate, at least one chip, and an encapsulant covering. The upper and lower surfaces of the circuit substrate have a circuit layer and a plurality of electric contacts, respectively. The chip is located on the upper surface of the circuit substrate and electrically connected with the circuit layer. The encapsulant covering is formed by using a mold to press encapsulant entering at least one encapsulant inlet provided on at least one side surface of the circuit substrate. The encapsulant covering encapsulates all the above components with only the electric contacts exposed. A trace mark of the encapsulant inlet remaining on the encapsulant covering is then cut to obtain a shape-molding structure of memory card with an smooth and intact outer appearance.

Abstract translation: 存储卡的形状模制结构包括电路基板，至少一个芯片和密封剂覆盖物。 电路基板的上表面和下表面分别具有电路层和多个电触点。 芯片位于电路基板的上表面并与电路层电连接。 密封剂覆盖物通过使用模具来挤压进入设置在电路基板的至少一个侧表面上的至少一个密封剂入口的密封剂而形成。 密封剂覆盖物仅将电触头暴露在外，将所有上述组件封装起来。 然后切割保留在密封剂覆盖物上的密封剂入口的痕迹，以获得具有平滑和完整外观的存储卡的形状模制结构。

公开(公告)号：US07382421B2

公开(公告)日：2008-06-03

申请号：US10964062

申请日：2004-10-12

Applicant: Randy Hoffman ,  John Wager ,  David Hong ,  Hai Chiang

Inventor： Randy Hoffman ,  John Wager ,  David Hong ,  Hai Chiang

IPC: G02F1/1343 ,  G02F1/136

CPC classification number: H01L29/7869 ,  H01L29/66969

Abstract: Apparatus comprising a thin film transistor having passivation layer disposed adjacent to a second surface of said channel layer, wherein said passivation layer comprises one or more wide-bandgap dielectric materials.

Abstract translation: 一种包括薄膜晶体管的装置，其具有邻近所述沟道层的第二表面设置的钝化层，其中所述钝化层包括一个或多个宽带隙电介质材料。

公开(公告)号：US20080077940A1

公开(公告)日：2008-03-27

申请号：US11984640

申请日：2007-11-20

Applicant: Blaine Nye ,  David Hong

Inventor： Blaine Nye ,  David Hong

IPC: G06F9/44

CPC classification number: G06F11/3409 ,  G06F11/3495 ,  G06F2201/86 ,  G06F2201/865 ,  G06Q10/063

Abstract: A high level Operational Support System (OSS) framework provides the infrastructure and analytical system to enable all applications and systems to be managed dynamically at runtime regardless of platform or programming technology. Applications are automatically discovered and managed. Java applications have the additional advantage of auto-inspection (through reflection) to determine their manageability. Resources belonging to application instances are associated and managed with that application instance. This provides operators the ability to not only manage an application, but its distributed components as well. They are presented as belonging to a single application instance node that can be monitored, analyzed, and managed. The OSS framework provides the platform-independent infrastructure that heterogeneous applications require to be monitored, controlled, analyzed and managed at runtime. New and legacy applications written in C++ or Java are viewed and manipulated identically with zero coupling between the applications themselves and the tools that scrutinize them.

Abstract translation: 高级操作支持系统（OSS）框架提供基础设施和分析系统，以便在运行时动态管理所有应用程序和系统，无论平台或编程技术如何。 应用程序被自动发现和管理。 Java应用程序具有自动检查（通过反射）的额外优势，以确定其可管理性。 属于应用程序实例的资源与该应用程序实例相关联并进行管理。 这为操作员提供了不仅可以管理应用程序，还能管理其分布式组件的能力。 它们被呈现为属于可以被监视，分析和管理的单个应用程序实例节点。 OSS框架提供与平台无关的基础设施，异构应用程序需要在运行时进行监视，控制，分析和管理。 使用C ++或Java编写的新的和旧的应用程序通过应用程序本身和仔细检查应用程序的工具之间的零耦合来查看和操作相同。

公开(公告)号：US20070018163A1

公开(公告)日：2007-01-25

申请号：US11527372

申请日：2006-09-26

Applicant: Hai Chiang ,  Randy Hoffman ,  David Hong ,  Nicole Dehuff ,  John Wager

Inventor： Hai Chiang ,  Randy Hoffman ,  David Hong ,  Nicole Dehuff ,  John Wager

IPC: H01L29/04

CPC classification number: H01L29/7869 ,  H01L29/78648

Abstract: A semiconductor device can include a channel including a zinc-indium oxide film.

公开(公告)号：USD528714S1

公开(公告)日：2006-09-19

申请号：US29213862

申请日：2004-09-24

Applicant: David Hong

Designer： David Hong

公开(公告)号：US09318240B2

公开(公告)日：2016-04-19

申请号：US13695862

申请日：2010-05-24

Applicant: Wilson Xiao Wei Yan ,  Given Jing Chen ,  Lotus Hua Huang ,  David Hong Fei Guo

Inventor： Wilson Xiao Wei Yan ,  Given Jing Chen ,  Lotus Hua Huang ,  David Hong Fei Guo

IPC: C09K21/14 ,  B32B27/38 ,  H01B7/295 ,  C08L75/06 ,  C09K21/12

CPC classification number: H01B7/295 ,  C08L75/06 ,  C09K21/12 ,  C08L31/04

Abstract: Halogen-free, flame retardant compositions comprising in weight percent based on the weight of the composition: A. 20 to 60% TPU/Si-g-EVA polymer blend in which the Si-g-EVA is crosslinked, B. 1 to 25% organic phosphate ester, C. 30 to 60% metal hydrate, and D. 0.1 to 10% epoxidized novolac. Optionally, the compositions further comprise in weight percent based on the weight of the composition, one or more of: E. 0.01 to 0.5% anti-dripping agent, F. 0.1 to 2% additive; and G. 0.1 to 5% filler.

Abstract translation: 基于组合物重量的无卤素阻燃组合物，其重量百分数：A.其中Si-g-EVA交联的20-60％TPU / Si-g-EVA聚合物共混物，B 1至25 ％有机磷酸酯，C.30-60％金属水合物，D.D.1至10％环氧化酚醛清漆。 任选地，组合物还包含基于组合物重量的重量百分比，一种或多种：E.0.01至0.5％的抗滴落剂，F. 0.1至2％的添加剂; 和G. 0.1至5％填料。

公开(公告)号：US08920929B2

公开(公告)日：2014-12-30

申请号：US13514173

申请日：2009-12-18

Applicant: Given Jing Chen ,  Wilson Xiao Wei Yan ,  Bin Li ,  Lan Lu ,  Weiming Wayne Ma ,  Lotus Hua Huang ,  David Hong Fei Guo

Inventor： Given Jing Chen ,  Wilson Xiao Wei Yan ,  Bin Li ,  Lan Lu ,  Weiming Wayne Ma ,  Lotus Hua Huang ,  David Hong Fei Guo

IPC: B32B27/40 ,  B32B27/32 ,  C08K5/523 ,  C08K3/22 ,  C09D153/00

CPC classification number: C08L75/04 ,  C08K3/22 ,  C08K5/5205 ,  C08K5/523 ,  C08L53/00 ,  C08L63/00 ,  C08L2205/03 ,  Y10T428/31605 ,  Y10T428/31609 ,  Y10T428/31678 ,  Y10T428/31692

Abstract: The present disclosure provides a flexible, halogen-free, flame retardant composition. The composition includes from about 25 wt % to about 95 wt % of a thermoplastic polyurethane (TPU); from about 5 wt % to about 50 wt % of an olefin block copolymer (OBC); and from about 30 wt % to about 70 wt % of a flame retardant. The flame retardant is selected from resorcinol bis(diphenyl 5 phosphate) (RDP), bis diphenyl phosphate (BDP), bisphenol-A bis(diphenyl phosphate) (BPADP), aluminum trihydrate (ATH), a nitrogen/phosphorus-based halogen-free flame retardant, epoxidized novolac resin, and combinations thereof. The composition requires no compatibilizer for the TPU and OBC. The composition finds application in wire and cable structures.

Abstract translation: 本公开提供了柔性的无卤阻燃组合物。 该组合物包含约25wt％至约95wt％的热塑性聚氨酯（TPU）; 约5重量％至约50重量％的烯烃嵌段共聚物（OBC）; 和约30重量％至约70重量％的阻燃剂。 阻燃剂选自间苯二酚双（二苯基磷酸二苯酯）（RDP），二苯基磷酸酯（BDP），双酚A双（磷酸二苯酯）（BPADP），三水合铝（ATH），氮/磷类卤素 - 游离阻燃剂，环氧化酚醛清漆树脂及其组合。 组合物不需要TPU和OBC的增容剂。 该组合物可应用于电线电缆结构中。