公开(公告)号：US08747626B2

公开(公告)日：2014-06-10

申请号：US13307301

申请日：2011-11-30

Applicant: Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

Inventor： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

IPC: C23C14/08 ,  C23C14/58

CPC classification number: C23C14/086 ,  C23C14/024 ,  C23C14/5806 ,  Y10T428/12549 ,  Y10T428/265

Abstract: A method for forming and protecting high quality bismuth oxide films comprises depositing a transparent thin film on a substrate comprising one of Si, alkali metals, or alkaline earth metals. The transparent thin film is stable at room temperature and at higher temperatures and serves as a diffusion barrier for the diffusion of impurities from the substrate into the bismuth oxide. Reactive sputtering, sputtering from a compound target, or reactive evaporation are used to deposit a bismuth oxide film above the diffusion barrier.

Abstract translation: 用于形成和保护高质量氧化铋膜的方法包括在包含Si，碱金属或碱土金属之一的衬底上沉积透明薄膜。 透明薄膜在室温和较高温度下是稳定的，并且用作扩散阻挡层，用于将杂质从基底扩散到氧化铋中。 使用反应溅射，来自化合物靶的溅射或反应性蒸发来在扩散阻挡层上沉积氧化铋膜。

公开(公告)号：US20140048013A1

公开(公告)日：2014-02-20

申请号：US13588764

申请日：2012-08-17

Applicant: Guowen Ding ,  Hien Minh Huu Le ,  Zhi-Wen Sun

Inventor： Guowen Ding ,  Mohd Fadzli Anwar Hassan ,  Hien Minh Huu Le ,  Zhi-Wen Sun

IPC: C30B25/06 ,  C30B23/02 ,  C30B25/02 ,  C30B19/00

CPC classification number: C30B33/005 ,  C30B23/025 ,  C30B25/18 ,  C30B29/16 ,  G02F1/13439

Abstract: Zinc oxide layer, including pure zinc oxide and doped zinc oxide, can be deposited with preferred crystal orientation and improved electrical conductivity by employing a seed layer comprising a metallic element. By selecting metallic elements that can easily crystallized at low temperature on glass substrates, together with possessing preferred crystal orientations and sizes, zinc oxide layer with preferred crystal orientation and large grain size can be formed, leading to potential optimization of transparent conductive oxide layer stacks.

Abstract translation: 包括纯氧化锌和掺杂的氧化锌的氧化锌层可以通过采用包含金属元素的种子层而沉积具有优选的晶体取向和改进的导电性。 通过选择可以在玻璃基板上容易地在低温下结晶的金属元素，并且具有优选的晶体取向和尺寸，可以形成具有优选晶体取向和大晶粒尺寸的氧化锌层，导致透明导电氧化物层叠层的潜在优化。

公开(公告)号：US20130164561A1

公开(公告)日：2013-06-27

申请号：US13338018

申请日：2011-12-27

Applicant: Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Minh Anh Nguyen ,  Zhi-Wen Sun

Inventor： Mohd Fadzli Anwar Hassan ,  Richard Blacker ,  Guowen Ding ,  Jingyu Lao ,  Hien Minh Huu Le ,  Yiwei Lu ,  Minh Anh Nguyen ,  Zhi-Wen Sun

IPC: B32B9/00 ,  B05D5/06

CPC classification number: C03C17/36 ,  C03C17/3618 ,  C03C17/3626 ,  C03C17/3644 ,  C03C17/366 ,  C03C2217/21 ,  C03C2217/228 ,  C03C2217/23 ,  C03C2217/26 ,  C03C2217/281

Abstract: Embodiments provided herein describe a low-e panel and a method for forming a low-e panel. A transparent substrate is provided. A metal oxide layer is formed over the transparent substrate. The metal oxide layer includes a first element, a second element, and a third element. A reflective layer is formed over the transparent substrate. The first element may include tin or zinc. The second element and the third element may each include tin, zinc, antimony, silicon, strontium, titanium, niobium, zirconium, magnesium, aluminum, yttrium, lanthanum, hafnium, or bismuth. The metal oxide layer may also include nitrogen.

Abstract translation: 本文提供的实施例描述了低e面板和形成低e面板的方法。 提供透明基板。 在透明基板上形成金属氧化物层。 金属氧化物层包括第一元件，第二元件和第三元件。 在透明基板上形成反射层。 第一元素可以包括锡或锌。 第二元素和第三元素可以各自包括锡，锌，锑，硅，锶，钛，铌，锆，镁，铝，钇，镧，铪或铋。 金属氧化物层也可以包括氮。

公开(公告)号：US20120094499A1

公开(公告)日：2012-04-19

申请号：US13087227

申请日：2011-04-14

Applicant: Siu Tang Ng ,  Guowen Ding ,  Teh-Tien Su ,  Zhuang Li ,  Benjamin Schwarz ,  Benjamin Lee

Inventor： Siu Tang Ng ,  Guowen Ding ,  Teh-Tien Su ,  Zhuang Li ,  Benjamin Schwarz ,  Benjamin Lee

IPC: H01L21/3065

CPC classification number: B08B7/0035 ,  H01J37/32862

Abstract: Methods of performing in situ chamber cleaning for etch chambers are described.

Abstract translation: 描述了对蚀刻室进行原位室清洁的方法。

公开(公告)号：US08101025B2

公开(公告)日：2012-01-24

申请号：US11363833

申请日：2006-02-27

Applicant: Eu Jin Lim ,  Chungdee Pong ,  Changhun Lee ,  Mark Kawaguchi ,  Guowen Ding

Inventor： Eu Jin Lim ,  Chungdee Pong ,  Changhun Lee ,  Mark Kawaguchi ,  Guowen Ding

IPC: B08B7/04 ,  B08B7/00

CPC classification number: B08B3/08 ,  B08B7/0035 ,  C23F4/00 ,  H01L21/02071 ,  H01L21/31138 ,  H01L21/32138 ,  H01L28/60 ,  Y10S438/906

Abstract: A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).

Abstract translation: 本发明提供一种控制基板腐蚀的方法。 在一个实施例中，一种用于控制衬底腐蚀的方法包括以下步骤：提供具有设置在其上的金属残留物的图案化光致抗蚀剂层的衬底; 将基底暴露于氢基等离子体以除去金属残余物; 并去除光致抗蚀剂。 金属残留物可以包含蚀刻铝或铜中的至少一种的残余物。 金属残留物还可以包含卤素化合物，其用卤素基工艺气体蚀刻含金属层。 氢基等离子体可以包含氢（H 2），并且还可以包含氮（N 2）和水（H 2 O）蒸气中的至少一种。 氢基等离子体还可以包含惰性气体，例如氩（Ar）。

公开(公告)号：US20110303639A1

公开(公告)日：2011-12-15

申请号：US13014832

申请日：2011-01-27

Applicant: HERRICK NG ,  GUOWEN DING ,  TEH-TIEN SUE ,  BENJAMIN SCHWARZ ,  ZHUANG LI

Inventor： HERRICK NG ,  GUOWEN DING ,  TEH-TIEN SUE ,  BENJAMIN SCHWARZ ,  ZHUANG LI

IPC: C23F1/02

CPC classification number: G03F7/091 ,  H01L21/0332 ,  H01L21/31116 ,  H01L21/31138 ,  H01L21/32136

Abstract: Methods of processing metal hard masks are provided herein. In some embodiments, a method for processing a metal hard mask layer having a tri-layer resist disposed thereon is provided. A pattern is etched from a patterned photoresist layer into a second anti-reflective layer using a first plasma comprising chlorine. The pattern is etched into a first anti-reflective layer using a second plasma formed from a second process gas. The second anti-reflective layer is removed using a third plasma comprising chlorine (Cl2). The metal hard mask layer is etched using a fourth plasma comprising chlorine. The first anti-reflective layer is removed using a fifth plasma comprising oxygen (O2). In some embodiments, the process may be performed in a single process chamber. In some embodiments, the metal hard mask layer may be a titanium nitride (TiN) hard mask.

Abstract translation: 本文提供了处理金属硬掩模的方法。 在一些实施例中，提供了一种用于处理其上设置有三层抗蚀剂的金属硬掩模层的方法。 使用包含氯的第一等离子体将图案从图案化的光致抗蚀剂层蚀刻成第二抗反射层。 使用由第二工艺气体形成的第二等离子体将图案蚀刻到第一抗反射层中。 使用包含氯（Cl 2）的第三等离子体去除第二抗反射层。 使用包含氯的第四等离子体蚀刻金属硬掩模层。 使用包含氧（O 2）的第五等离子体去除第一抗反射层。 在一些实施方案中，该方法可以在单个处理室中进行。 在一些实施例中，金属硬掩模层可以是氮化钛（TiN）硬掩模。

公开(公告)号：US20100003828A1

公开(公告)日：2010-01-07

申请号：US11946562

申请日：2007-11-28

Applicant: Guowen Ding ,  Changhun Lee ,  Teh-Tien Su

Inventor： Guowen Ding ,  Changhun Lee ,  Teh-Tien Su

IPC: H01L21/467

CPC classification number: H01L21/32136

Abstract: Methods for etching a metal material layer disposed on a substrate to form features with desired profile and uniform critical dimension (CD) of the features across the substrate. In one embodiment, a method for etching a material layer disposed on a substrate includes providing a substrate having a metal layer disposed on a substrate into an etch reactor, flowing a gas mixture containing at least a halogen containing gas and a passivation gas into the reactor, the passivation gas including a nitrogen containing gas and an unsaturated hydrocarbon gas, wherein the nitrogen gas and the unsaturated hydrocarbon gas and etching the metal layer using a plasma formed from the gas mixture. The CD uniformity could be conveniently, efficiently tuned by the gas ratio, if the concentration of the unsaturated hydrocarbon gas is high enough that the molecular ratio of the unsaturated hydrocarbon gas in the diluent gas times the reactor pressure in milliTorr is greater than 1.25.

Abstract translation: 用于蚀刻设置在基底上的金属材料层以形成具有跨越衬底的特征所需轮廓和均匀临界尺寸（CD）的特征的方法。 在一个实施例中，用于蚀刻设置在衬底上的材料层的方法包括：将具有设置在衬底上的金属层的衬底提供到蚀刻反应器中，将含有至少含卤素气体和钝化气体的气体混合物流入反应器 包括含氮气体和不饱和烃气体的钝化气体，其中氮气和不饱和烃气体使用由气体混合物形成的等离子体蚀刻金属层。 如果不饱和烃气体的浓度足够高，稀释气体中的不饱和烃气体的分子比（以毫乇为单位的反应器压力）大于1.25，则可以通过气体比率方便地，有效地调节CD均匀性。

公开(公告)号：US20060137710A1

公开(公告)日：2006-06-29

申请号：US11363833

申请日：2006-02-27

Applicant: Eu Lim ,  Chungdee Pong ,  Changhun Lee ,  Mark Kawaguchi ,  Guowen Ding

Inventor： Eu Lim ,  Chungdee Pong ,  Changhun Lee ,  Mark Kawaguchi ,  Guowen Ding

IPC: B08B6/00 ,  C23F1/00

CPC classification number: B08B3/08 ,  B08B7/0035 ,  C23F4/00 ,  H01L21/02071 ,  H01L21/31138 ,  H01L21/32138 ,  H01L28/60 ,  Y10S438/906

Abstract: A method for controlling corrosion of a substrate is provided herein. In one embodiment, a method for controlling corrosion of a substrate includes the steps of providing a substrate having a patterned photoresist layer with a metallic residue disposed thereon; exposing the substrate to a hydrogen-based plasma to remove the metallic residue; and removing the photoresist. The metallic residue may comprise residue from etching at least one of aluminum or copper. The metallic residue may further comprise a halogen compound from etching a metal-containing layer with a halogen-based process gas. The hydrogen-based plasma may comprise hydrogen (H2) and may further comprise at least one of nitrogen (N2) and water (H2O) vapor. The hydrogen-based plasma may further comprise an inert gas, such as argon (Ar).

Abstract translation: 本发明提供一种控制基板腐蚀的方法。 在一个实施例中，一种用于控制衬底腐蚀的方法包括以下步骤：提供具有设置在其上的金属残留物的图案化光致抗蚀剂层的衬底; 将基底暴露于氢基等离子体以除去金属残余物; 并去除光致抗蚀剂。 金属残留物可以包含蚀刻铝或铜中的至少一种的残余物。 金属残留物还可以包含卤素化合物，其用卤素基工艺气体蚀刻含金属层。 氢基等离子体可以包含氢（H 2 O 2），并且还可以包含氮（N 2/2）和水（H 2 H 2）中的至少一种 > O）蒸气。 氢基等离子体还可以包含惰性气体，例如氩（Ar）。