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    Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom
    22.
    发明授权
    Damascene integration methods for graphitic films in three-dimensional memories and memories formed therefrom 有权
    用于形成三维记忆和由其形成的记忆的石墨膜的镶嵌一体化方法

    公开(公告)号：US08467224B2

    公开(公告)日：2013-06-18

    申请号：US12421405

    申请日：2009-04-09

    Applicant: April D. Schricker ,  Mark H. Clark ,  Andy Fu ,  Huiwen Xu

    Inventor： April D. Schricker ,  Mark H. Clark ,  Andy Fu ,  Huiwen Xu

    IPC: H01L45/00 ,  G11C11/21

    CPC classification number: H01L45/04 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/124 ,  H01L45/149 ,  H01L45/1683 ,  H01L45/1691

    Abstract: In some aspects, a microelectronic structure is provided that includes (1) a first conducting layer; (2) a first dielectric layer formed above the first conducting layer and having a feature that exposes a portion of the first conducting layer; (3) a graphitic carbon film disposed on a sidewall of the feature defined by the first dielectric layer and in contact with the first conducting layer at a bottom of the feature; and (4) a second conducting layer disposed above and in contact with the graphitic carbon film. Numerous other aspects are provided.

    Abstract translation: 在一些方面，提供微电子结构，其包括（1）第一导电层; （2）形成在第一导电层之上并具有暴露第一导电层的一部分的特征的第一介电层; （3）石墨碳膜，其设置在由所述第一介电层限定的特征的侧壁上，并且在所述特征的底部与所述第一导电层接触; 和（4）设置在石墨碳膜上方并与石墨碳膜接触的第二导电层。 提供了许多其他方面。

    Memory cell that includes a carbon-based memory element and methods forming the same
    23.
    发明授权
    Memory cell that includes a carbon-based memory element and methods forming the same 失效
    包含碳基存储元件的存储单元及其形成方法

    公开(公告)号：US08466044B2

    公开(公告)日：2013-06-18

    申请号：US12536457

    申请日：2009-08-05

    Applicant: Huiwen Xu

    Inventor： Huiwen Xu

    IPC: H01L21/20

    CPC classification number: H01L27/101 ,  G11C2213/35 ,  G11C2213/71 ,  H01L21/3146 ,  H01L21/318 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1675

    Abstract: Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by forming a carbon-based reversible resistance-switching material above a substrate, forming a carbon nitride layer above the carbon-based reversible resistance-switching material, and forming a barrier material above the carbon nitride layer using an atomic layer deposition process. Other aspects are also provided.

    Abstract translation: 提供了存储单元和形成这种存储单元的方法，其包括碳基可逆电阻率切换材料。 在具体实施方案中，根据本发明的方法通过在基底上形成碳基可逆电阻切换材料形成存储单元，在碳基可逆电阻切换材料上形成碳氮化物层，并形成阻挡材料 使用原子层沉积工艺在碳氮化物层上方。 还提供其他方面。

    Methods for increased array feature density
    24.
    发明授权
    Methods for increased array feature density 有权
    增加数组特征密度的方法

    公开(公告)号：US08372740B2

    公开(公告)日：2013-02-12

    申请号：US13366916

    申请日：2012-02-06

    Applicant: Huiwen Xu ,  Yung-Tin Chen ,  Steven J. Radigan

    Inventor： Huiwen Xu ,  Yung-Tin Chen ,  Steven J. Radigan

    IPC: H01L21/44

    CPC classification number: H01L21/3088 ,  H01L21/0337 ,  H01L21/0338 ,  H01L27/101 ,  H01L27/1021

    Abstract: The embodiments generally relate to methods of making semiconductor devices, and more particularly, to methods for making semiconductor pillar structures and increasing array feature pattern density using selective or directional gap fill. The technique has application to a variety of materials and can be applied to making monolithic two or three-dimensional memory arrays.

    Abstract translation: 实施例通常涉及制造半导体器件的方法，更具体地，涉及制造半导体柱结构的方法以及使用选择性或方向性间隙填充来增加阵列特征图案密度。 该技术可应用于各种材料，可应用于制作单片二维或三维存储阵列。

    Methods to improve electrode diffusions in two-terminal non-volatile memory devices
    26.
    发明申请
    Methods to improve electrode diffusions in two-terminal non-volatile memory devices 有权
    改善双端非易失性存储器件中电极扩散的方法

    公开(公告)号：US20100327254A1

    公开(公告)日：2010-12-30

    申请号：US12458091

    申请日：2009-06-30

    Applicant: Xiying Chen ,  Huiwen XU ,  Chuanbin PAN

    Inventor： Xiying Chen ,  Huiwen XU ,  Chuanbin PAN

    IPC: H01L45/00 ,  H01L21/20

    CPC classification number: H01L27/101 ,  H01L27/1021 ,  H01L27/2409 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/146 ,  H01L45/147 ,  H01L45/149 ,  H01L45/1675

    Abstract: A non-volatile memory device includes a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell containing a steering element and a storage element and at least one of a top corner or a bottom corner of each of the plurality of pillars is rounded. A method of making non-volatile memory device includes forming a stack of device layers, and patterning the stack to form a plurality of pillars, where each of the plurality of pillars contains a non-volatile memory cell that contains a steering element and a storage element, and where at least one of top corner or bottom corner of each of the plurality of pillars is rounded.

    Abstract translation: 非易失性存储器件包括多个支柱，其中多个支柱中的每个支柱包含含有转向元件和存储元件的非易失性存储单元，并且每个的顶角或底角中的至少一个 多个柱子是圆形的。 制造非易失性存储器件的方法包括形成器件层堆叠，以及图案化堆叠以形成多个柱，其中多个柱中的每个柱包含含有转向元件和存储器的非易失性存储单元 并且其中所述多个柱中的每一个的顶角或底角中的至少一个是圆形的。

    METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAYER SHARING
    28.
    发明申请
    METHODS AND APPARATUS FOR INCREASING MEMORY DENSITY USING DIODE LAYER SHARING 有权
    使用二极管共享增加记忆密度的方法和装置

    公开(公告)号：US20100038623A1

    公开(公告)日：2010-02-18

    申请号：US12541078

    申请日：2009-08-13

    Applicant: Huiwen Xu ,  Er-Xuan Ping ,  Roy E. Scheuerlein

    Inventor： Huiwen Xu ,  Er-Xuan Ping ,  Roy E. Scheuerlein

    IPC: H01L47/00 ,  H01L21/44

    CPC classification number: H01L45/12 ,  H01L27/10 ,  H01L27/1021 ,  H01L27/1052 ,  H01L27/24 ,  H01L45/16

    Abstract: Methods of forming memory cells are disclosed which include forming a pillar above a substrate, the pillar including a steering element and a memory element, and performing one or more etches vertically through the memory element, but not the steering element, to form multiple memory cells that share a single steering element. Memory cells formed from such methods, as well as numerous other aspects are also disclosed.

    Abstract translation: 公开了形成存储器单元的方法，其包括在衬底上形成柱，所述柱包括操纵元件和存储元件，并且通过存储元件而不是导向元件垂直地执行一个或多个蚀刻，以形成多个存储单元 共享一个转向元件。 还公开了由这些方法形成的存储单元以及许多其它方面。

    MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME
    29.
    发明申请
    MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME 失效
    包含基于碳的存储元件的存储器单元及其形成方法

    公开(公告)号：US20100032638A1

    公开(公告)日：2010-02-11

    申请号：US12536457

    申请日：2009-08-05

    Applicant: Huiwen Xu

    Inventor： Huiwen Xu

    IPC: H01L47/00 ,  H01L21/04

    CPC classification number: H01L27/101 ,  G11C2213/35 ,  G11C2213/71 ,  H01L21/3146 ,  H01L21/318 ,  H01L27/2409 ,  H01L27/2463 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1616 ,  H01L45/1625 ,  H01L45/1641 ,  H01L45/1675

    Abstract: Memory cells, and methods of forming such memory cells, are provided that include a carbon-based reversible resistivity switching material. In particular embodiments, methods in accordance with this invention form a memory cell by forming a carbon-based reversible resistance-switching material above a substrate, forming a carbon nitride layer above the carbon-based reversible resistance-switching material, and forming a barrier material above the carbon nitride layer using an atomic layer deposition process. Other aspects are also provided.

    Abstract translation: 提供了存储单元和形成这种存储单元的方法，其包括碳基可逆电阻率切换材料。 在具体实施方案中，根据本发明的方法通过在基底上形成碳基可逆电阻切换材料形成存储单元，在碳基可逆电阻切换材料上形成碳氮化物层，并形成阻挡材料 使用原子层沉积工艺在碳氮化物层上方。 还提供其他方面。

    CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME
    30.
    发明申请
    CARBON-BASED RESISTIVITY-SWITCHING MATERIALS AND METHODS OF FORMING THE SAME 审中-公开
    基于碳的电阻率切换材料及其形成方法

    公开(公告)号：US20100012914A1

    公开(公告)日：2010-01-21

    申请号：US12505122

    申请日：2009-07-17

    Applicant: Huiwen Xu ,  Er-Xuan Ping ,  Andy Fu

    Inventor： Huiwen Xu ,  Er-Xuan Ping ,  Andy Fu

    IPC: H01L47/00 ,  H01L21/00

    CPC classification number: H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1616

    Abstract: Methods of forming memory devices, and memory devices formed in accordance with such methods, are provided, the methods including forming a via above a first conductive layer, forming a nonconformal carbon-based resistivity-switchable material layer in the via and coupled to the first conductive layer; and forming a second conductive layer in the via, above and coupled to the nonconformal carbon-based resistivity-switchable material layer. Numerous other aspects are provided.

    Abstract translation: 提供了形成存储器件的方法和根据这些方法形成的存储器件，所述方法包括在第一导电层上方形成通孔，在通孔中形成非共形的基于碳的电阻率可切换材料层并耦合到第一导电层 导电层; 并在上述通孔中形成第二导电层，并且连接到非共形的基于碳的电阻率可切换材料层。 提供了许多其他方面。

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