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公开(公告)号：US20090191589A1
公开(公告)日：2009-07-30
申请号：US12406330
申请日：2009-03-18
申请人： Shin-ichi Hashimoto , Kazuhiko Tabata , Aya Kubota , Hajime Ikeda
发明人： Shin-ichi Hashimoto , Kazuhiko Tabata , Aya Kubota , Hajime Ikeda
IPC分类号： C12P21/02
摘要： The present invention provides a protein which catalyzes the synthesis of a dipeptide different from L-Ala-L-Ala, a process for producing the protein which catalyzes the synthesis of a dipeptide, a process for producing a dipeptide using the protein which catalyzes the synthesis of a dipeptide, and a process for producing the dipeptide using a culture of a microorganism producing the protein which catalyzes the synthesis of a dipeptide or the like as an enzyme source.
摘要翻译： 本发明提供了催化不同于L-Ala-L-Ala的二肽的合成的蛋白质，用于生产催化二肽合成的蛋白质的方法，使用催化合成的蛋白质生产二肽的方法 的二肽的方法，以及使用产生作为酶源的二肽等的合成的蛋白质的微生物的培养物来生成二肽的方法。
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公开(公告)号：US20090021822A1
公开(公告)日：2009-01-22
申请号：US12168517
申请日：2008-07-07
申请人： Hajime Ikeda
发明人： Hajime Ikeda
IPC分类号： G02F1/15
CPC分类号： G02F1/153 , G02F1/133553 , G02F1/1347
摘要： An object of the present invention is to provide a reflection type display apparatus that has reduced unwanted reflection when black is displayed, has a high reflectance when white is displayed and can provide color display. For that object, a reflection type display apparatus according to the present invention includes: a first light modulating layer 101 for controlling electrically and externally a light absorbing state and a light transmitting state; a second light modulating layer 102 for controlling electrically and externally a light reflecting state and the light transmitting state; and a reflector 9 for reflecting light in a particular wavelength band, wherein the first light modulating layer 101, the second light modulating layer 102 and the reflector 9 are arranged in this order from a light incidence side.
摘要翻译： 本发明的目的是提供一种当显示黑色时减少了不希望的反射的反射型显示装置，当显示白色时具有高的反射率并且可以提供彩色显示。 对于该目的，根据本发明的反射型显示装置包括：第一光调制层101，其用于在外部控制光吸收状态和透光状态; 第二光调制层102，其用于控制光和外部的反射光和透光状态; 以及用于反射特定波长带中的光的反射器9，其中第一光调制层101，第二光调制层102和反射器9从光入射侧依次排列。
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公开(公告)号：US20080213827A1
公开(公告)日：2008-09-04
申请号：US11630397
申请日：2005-06-24
CPC分类号： C12P21/02
摘要： The present invention provides a process for producing a dipeptide or a dipeptide derivative by using a protein having the activity to form the dipeptide or dipeptide derivative from one or more kinds of amino acids or amino acid derivatives, or a culture of cells having the ability to produce the protein or a treated matter of the culture as a enzyme source, which comprise;allowing the enzyme source, one or more kinds of amino acids or amino acid derivatives and ATP to be present in an aqueous medium; allowing the dipeptide or dipeptide derivative to form and accumulate in the medium; and recovering the dipeptide or dipeptide derivative from the medium.
摘要翻译： 本发明提供了通过使用具有从一种或多种氨基酸或氨基酸衍生物形成二肽或二肽衍生物的活性的蛋白质或具有以下能力的细胞培养物来生产二肽或二肽衍生物的方法： 产生蛋白质或培养物的处理物质作为酶源，其包含： 允许酶源，一种或多种氨基酸或氨基酸衍生物和ATP存在于水性介质中; 允许二肽或二肽衍生物在培养基中形成和积累; 并从培养基中回收二肽或二肽衍生物。
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24.发明申请公开(公告)号：US20070272944A1
公开(公告)日：2007-11-29
申请号：US11711711
申请日：2007-02-28
申请人： Kazuya Notsu , Kiyofumi Sakaguchi , Nobuhiko Sato , Hajime Ikeda , Shoji Nishida
发明人： Kazuya Notsu , Kiyofumi Sakaguchi , Nobuhiko Sato , Hajime Ikeda , Shoji Nishida
IPC分类号： H01L31/00
CPC分类号： H01L29/78687 , H01L21/02381 , H01L21/0245 , H01L21/02455 , H01L21/02502 , H01L21/02513 , H01L21/0262 , H01L21/76259 , H01L29/1054
摘要： An SiGe layer is grown on a silicon substrate. The SiGe layer or the silicon substrate and SiGe layer are porosified by anodizing the SiGe layer to form a strain inducing porous layer or a porous silicon layer and strain inducing porous layer. An SiGe layer and strained silicon layer are formed on the resultant structure. The SiGe layer in the stacking growth step only needs to be on the uppermost surface of the porous layer. For this reason, an SiGe layer with a low defect density and high concentration can be formed. Since the SiGe layer on the strain inducing porous layer can achieve a low defect density without lattice mismatching. Hence, a high-quality semiconductor substrate having a high strained silicon layer can be obtained.
摘要翻译： SiGe层生长在硅衬底上。 通过阳极氧化SiGe层来形成SiGe层或硅衬底和SiGe层以形成应变诱导多孔层或多孔硅层和应变诱导多孔层。 在所得结构上形成SiGe层和应变硅层。 层叠生长步骤中的SiGe层仅需要在多孔层的最上表面上。 因此，可以形成具有低缺陷密度和高浓度的SiGe层。 由于应变诱导多孔层上的SiGe层可以实现低缺陷密度而没有晶格失配。 因此，可以获得具有高应变硅层的高质量半导体衬底。
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公开(公告)号：US20060035447A1
公开(公告)日：2006-02-16
申请号：US11199597
申请日：2005-08-08
申请人： Hajime Ikeda , Kazuya Notsu , Nobuhiko Sato , Shoji Nishida
发明人： Hajime Ikeda , Kazuya Notsu , Nobuhiko Sato , Shoji Nishida
CPC分类号： H01L21/02381 , H01L21/0245 , H01L21/02513 , H01L21/02532 , H01L21/02658 , H01L21/3063 , H01L21/30635
摘要： A method of manufacturing a semiconductor substrate includes a growing step of growing a second single crystalline semiconductor on a first single crystalline semiconductor, a blocking layer forming step of forming a blocking layer on the second single crystalline semiconductor, and a relaxing step of generating crystal defects at a portion deeper than the blocking layer to relax a stress acting on the second single crystalline semiconductor. The blocking layer includes, e.g., a porous layer, and prevents the crystal defects at the portion deeper than the blocking layer from propagating to the surface of the second single crystalline semiconductor.
摘要翻译： 一种制造半导体衬底的方法包括在第一单晶半导体上生长第二单晶半导体的生长步骤，在第二单晶半导体上形成阻挡层的阻挡层形成步骤以及产生晶体缺陷的松弛步骤 在比阻挡层更深的部分放松作用在第二单晶半导体上的应力。 阻挡层包括例如多孔层，并且防止在比阻挡层更深的部分处的晶体缺陷传播到第二单晶半导体的表面。
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公开(公告)号：US06512270B2
公开(公告)日：2003-01-28
申请号：US09931761
申请日：2001-08-20
申请人： Takeshi Satou , Takuya Takahashi , Tomoya Katou , Toshiki Kaneko , Hajime Ikeda
发明人： Takeshi Satou , Takuya Takahashi , Tomoya Katou , Toshiki Kaneko , Hajime Ikeda
IPC分类号： H01L2701
CPC分类号： H01L27/124 , H01L27/1214 , H01L27/127 , H01L27/1288 , H01L29/42384 , H01L29/4908 , H01L29/66765 , H01L29/78621
摘要： A polycrystalline Si thin film transistor substrate having a self-aligned LDD and provided with a gate made of a Mo—W alloy having a W concentration not lower than 5% by weight and lower than 25% by weight and preferably a W concentration of 17 to 22% by weight, which is formed by a process comprising a wet-etching step using an etching solution having a phosphoric acid concentration of 60% to 70% by weight, has uniform characteristic properties and is excellent in productivity.
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公开(公告)号：US08859463B2
公开(公告)日：2014-10-14
申请号：US12767612
申请日：2010-04-26
申请人： Hajime Ikeda , Atsushi Iwata
发明人： Hajime Ikeda , Atsushi Iwata
CPC分类号： A01N51/00 , A01N43/653 , A01N33/22 , A01N43/52 , A01N43/54 , A01N43/84 , A01N2300/00
摘要： A control method against noxious organisms in a field of soybean or corn, which comprises applying one or more PPO-inhibiting compounds selected from the group consisting of flumioxazin, sulfentrazone, saflufenacil, oxyfluorfen and 3-(4-chloro-6-fluoro-2-trifluoromethylbenzimidazol-7-yl)-1-methyl-6-trifluoromethyl-2,4-(1H,3H)pyrimidinedione to soil or weeds in the field where soybean or corn seeds have been sown or where said seeds are to be sown, said seeds being treated with one or more compounds selected from the group consisting of neonicotinoid compounds, azole compounds, strobilurin compounds and metalaxyl compounds.
摘要翻译： 一种针对大豆或玉米领域的有害生物的控制方法，其包括施用一种或多种选自以下的PPO抑制化合物：氟马嗪，磺胺腙，香草氟苯，氟氟芬和3-（4-氯-6-氟-2 - 三氟甲基苯并咪唑-7-基）-1-甲基-6-三氟甲基-2,4-（1H，3H）嘧啶二酮在大豆或玉米种子播种或播种所述种子的田间的土壤或杂草中， 所述种子用一种或多种选自新烟碱类化合物，唑类化合物，嗜球果伞素化合物和甲霜灵化合物的化合物进行处理。
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公开(公告)号：US20120277106A1
公开(公告)日：2012-11-01
申请号：US13546480
申请日：2012-07-11
申请人： Hajime IKEDA , Atsushi Iwata
发明人： Hajime IKEDA , Atsushi Iwata
CPC分类号： A01N43/78 , A01N43/54 , A01N43/653 , A01N43/84 , A01N51/00 , A01N33/22 , A01N2300/00
摘要： A method for controlling noxious organisms in a field of soybean or corn, comprising the steps of: treating soybean or corn seeds with at least one neonicotinoid compound selected from the group consisting of clothianidin, thiamethoxam, imidacloprid, dinotefuran, nitenpyram, acetamiprid, and thiacloprid, and treating the field with at least one PPO inhibitor compound selected from the group consisting of flumioxazin, sulfentrazone, saflufenacil, oxyfluorfen, and 3-(4-chloro-6-fluoro-2-trifluoromethylbenzimidazol-7-yl)-1-methyl-6-trifluoromethyl-2, 4-(1H, 3H)pyrimidinedione before or after the soybean or corn seeds treated with the neonicotinoid compound are sown in the field.
摘要翻译： 一种用于控制大豆或玉米田中有害生物的方法，包括以下步骤：用至少一种新烟碱类化合物处理大豆或玉米种子，所述新烟碱类化合物选自噻虫胺，噻虫嗪，吡虫啉，二硝基呋喃，硝苯吡啶，啶虫脒和噻虫啉 ，并用至少一种选自氟马嗪，磺胺腙，香草氟苯，氟氟芬和3-（4-氯-6-氟-2-三氟甲基苯并咪唑-7-基）-1-甲基的PPO抑制剂化合物处理该领域 6-三氟甲基-2,4-（1H，3H）嘧啶二酮在用新烟碱类化合物处理的大豆或玉米种子之前或之后播种。
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公开(公告)号：US08159483B2
公开(公告)日：2012-04-17
申请号：US12553714
申请日：2009-09-03
申请人： Hajime Ikeda
发明人： Hajime Ikeda
IPC分类号： G09G5/00
CPC分类号： G02F1/1506 , G09G3/2022 , G09G3/38 , G09G2300/0809
摘要： A plurality of pixels, each including first and second electrodes and an electrolytic solution, are arranged. When a voltage between the first and the second electrodes increases into a precipitation critical value or more, the precipitation of electroplating starts. When the voltage decreases into a value smaller than the deposition overvoltage value, the precipitation ends. A control unit controlling the voltage between the first and second electrodes repeats a subfield operation including a first operation of selectively supplying any of first, a second voltage and third voltages to the plurality of pixels, and a second operation of collectively supplying the second voltage value to the plurality of pixels after the first operation, at least two times or more, to control the gradation of each pixel based on a timing of supplying the third voltage.
摘要翻译： 布置有多个像素，每个像素包括第一和第二电极以及电解液。 当第一和第二电极之间的电压增加到降水临界值以上时，电镀的沉淀开始。 当电压降低到小于沉积过电压值的值时，降水结束。 控制第一和第二电极之间的电压的控制单元重复子场操作，其包括选择性地向多个像素提供第一，第二电压和第三电压中的任何一个的第一操作，以及共同地提供第二电压值的第二操作 在第一操作之后的多个像素中，至少两次以上，以基于提供第三电压的定时来控制每个像素的灰度。
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公开(公告)号：US20100317520A1
公开(公告)日：2010-12-16
申请号：US12767612
申请日：2010-04-26
申请人： Hajime IKEDA , Atsushi IWATA
发明人： Hajime IKEDA , Atsushi IWATA
IPC分类号： A01N43/40 , A01N43/54 , A01N43/78 , A01N43/56 , A01N43/64 , A01P13/00 , A01P15/00 , A01N37/44 , A01N33/18
CPC分类号： A01N51/00 , A01N43/653 , A01N33/22 , A01N43/52 , A01N43/54 , A01N43/84 , A01N2300/00
摘要： A control method against noxious organisms in a field of soybean or corn, which comprises applying one or more PPO-inhibiting compounds selected from the group consisting of flumioxazin, sulfentrazone, saflufenacil, oxyfluorfen and 3-(4-chloro-6-fluoro-2-trifluoromethylbenzimidazol-7-yl)-1-methyl-6-trifluoromethyl-2,4-(1H,3H)pyrimidinedione to soil or weeds in the field where soybean or corn seeds have been sown or where said seeds are to be sown, said seeds being treated with one or more compounds selected from the group consisting of neonicotinoid compounds, azole compounds, strobilurin compounds and metalaxyl compounds.
摘要翻译： 一种针对大豆或玉米领域的有害生物的控制方法，其包括施用一种或多种选自以下的PPO抑制化合物：氟马嗪，磺胺腙，香草氟苯，氟氟芬和3-（4-氯-6-氟-2 - 三氟甲基苯并咪唑-7-基）-1-甲基-6-三氟甲基-2,4-（1H，3H）嘧啶二酮在大豆或玉米种子播种或播种所述种子的田间的土壤或杂草中， 所述种子用一种或多种选自新烟碱类化合物，唑类化合物，嗜球果伞素化合物和甲霜灵化合物的化合物进行处理。
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