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公开(公告)号：US20140027709A1
公开(公告)日：2014-01-30
申请号：US13562184
申请日：2012-07-30
申请人： John A. Higginson , Andreas Bibl , Hsin-Hua Hu
发明人： John A. Higginson , Andreas Bibl , Hsin-Hua Hu
CPC分类号： H01L25/167 , H01L21/56 , H01L23/3171 , H01L25/0753 , H01L25/50 , H01L27/1214 , H01L27/1248 , H01L27/1262 , H01L33/005 , H01L33/06 , H01L33/42 , H01L33/44 , H01L33/54 , H01L33/62 , H01L2924/0002 , H01L2933/0016 , H01L2933/0025 , H01L2933/0033 , H01L2933/005 , H01L2933/0066 , H01L2924/00
摘要： A method and structure for receiving a micro device on a receiving substrate are disclosed. A micro device such as a micro LED device is punched-through a passivation layer covering a conductive layer on the receiving substrate, and the passivation layer is hardened. In an embodiment the micro LED device is punched-through a B-staged thermoset material. In an embodiment the micro LED device is punched-through a thermoplastic material.
摘要翻译： 公开了一种用于在接收基板上接收微型装置的方法和结构。 诸如微型LED器件的微器件通过覆盖接收衬底上的导电层的钝化层穿孔，并且钝化层硬化。 在一个实施例中，微型LED器件通过B阶热固性材料穿孔。 在一个实施例中，微型LED器件穿过热塑性材料。
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22.发明申请公开(公告)号：US20130130440A1
公开(公告)日：2013-05-23
申请号：US13436314
申请日：2012-03-30
IPC分类号： H01L21/50
CPC分类号： H01L24/83 , H01L21/67144 , H01L24/75 , H01L24/95 , H01L33/0079 , H01L33/46 , H01L2224/7598 , H01L2224/83 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , Y10T156/1153 , H01L2924/00
摘要： A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.
摘要翻译： 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。
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23.发明申请METHOD OF FORMING A MICRO LED STRUCTURE AND ARRAY OF MICRO LED STRUCTURES WITH AN ELECTRICALLY INSULATING LAYER 有权形成微型LED结构的方法和微型LED结构与电绝缘层的阵列公开(公告)号：US20130126081A1
公开(公告)日：2013-05-23
申请号：US13436260
申请日：2012-03-30
CPC分类号： H01L33/08 , H01L21/67144 , H01L24/75 , H01L24/83 , H01L24/95 , H01L27/156 , H01L33/0079 , H01L33/405 , H01L2224/7598 , H01L2224/83 , H01L2224/95145 , H01L2924/01322 , H01L2924/12041 , H01L2924/12042 , H01L2924/00
摘要： A method of fabricating and transferring a micro device and an array of micro devices to a receiving substrate are described. In an embodiment, an electrically insulating layer is utilized as an etch stop layer during etching of a p-n diode layer to form a plurality of micro p-n diodes. In an embodiment, an electrically conductive intermediate bonding layer is utilized during the formation and transfer of the micro devices to the receiving substrate.
摘要翻译： 描述了将微器件和微器件阵列制造和传送到接收衬底的方法。 在一个实施例中，在蚀刻p-n二极管层以形成多个微p-n二极管期间，电绝缘层被用作蚀刻停止层。 在一个实施例中，在将微器件形成和传送到接收衬底期间，使用导电中间接合层。
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公开(公告)号：US08426227B1
公开(公告)日：2013-04-23
申请号：US13372245
申请日：2012-02-13
IPC分类号： H01L21/00
CPC分类号： H01L33/06 , F21V7/00 , H01L25/0753 , H01L27/15 , H01L29/0684 , H01L33/0079 , H01L33/04 , H01L33/20 , H01L33/28 , H01L33/30 , H01L2224/95
摘要： A micro light emitting diode (LED) and a method of forming an array of micro LEDs for transfer to a receiving substrate are described. The micro LED structure may include a micro p-n diode and a metallization layer, with the metallization layer between the micro p-n diode and a bonding layer. A conformal dielectric barrier layer may span sidewalls of the micro p-n diode. The micro LED structure and micro LED array may be picked up and transferred to a receiving substrate.
摘要翻译： 描述了微型发光二极管（LED）和形成用于传送到接收基板的微型LED阵列的方法。 微型LED结构可以包括微型p-n二极管和金属化层，金属化层位于微型p-n二极管和结合层之间。 保形介质阻挡层可以跨越微型p-n二极管的侧壁。 微型LED结构和微型LED阵列可以被拾取并转移到接收衬底。
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