公开(公告)号：US08124508B2

公开(公告)日：2012-02-28

申请号：US12750983

申请日：2010-03-31

Applicant: John D. Pollock ,  Zhimin Wan ,  Erik Collart

Inventor： John D. Pollock ,  Zhimin Wan ,  Erik Collart

IPC: H01L21/425

CPC classification number: C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

公开(公告)号：US20110244669A1

公开(公告)日：2011-10-06

申请号：US12750983

申请日：2010-03-31

Applicant: JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

Inventor： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC: H01L21/265

CPC classification number: C23C14/48 ,  H01L21/26513 ,  H01L21/26593 ,  H01L21/324

Abstract: Techniques for low temperature ion implantation are provided to improve the throughput. During a low temperature ion implantation, an implant process may be started before the substrate temperature is decreased to be about to a prescribed implant temperature by a cooling process, and a heating process may be started to increase the substrate temperature before the implant process is finished. Moreover, one or more temperature adjust process may be performed during one or more portion of the implant process, such that the substrate temperature may be controllably higher than the prescribe implant temperature during the implant process.

Abstract translation: 提供了用于低温离子注入的技术以提高生产量。 在低温离子注入期间，可以在通过冷却过程将衬底温度降低到约为规定的植入温度之前开始植入工艺，并且可以开始加热过程以在植入过程完成之前增加衬底温度 。 此外，可以在植入过程的一个或多个部分期间执行一个或多个温度调节过程，使得在植入过程期间，衬底温度可以可控地高于处方植入物温度。

公开(公告)号：US20110233431A1

公开(公告)日：2011-09-29

申请号：US12748877

申请日：2010-03-29

Applicant: Zhimin WAN ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

Inventor： Zhimin WAN ,  John D. Pollock ,  Don Berrian ,  Causon Ko-Chuan Jen

IPC: H01J37/317 ,  H01J37/02

CPC classification number: C23C14/48 ,  H01J37/09 ,  H01J37/3171 ,  H01J2237/0455 ,  H01J2237/24542 ,  H01J2237/31711

Abstract: A variable aperture within an aperture device is used to shape the ion beam before the substrate is implanted by shaped ion beam, especially to finally shape the ion beam in a position right in front of the substrate. Hence, different portions of a substrate, or different substrates, can be implanted respectively by different shaped ion beams without going through using multiple fixed apertures or retuning the ion beam each time. In other words, different implantations may be achieved respectively by customized ion beams without high cost (use multiple fixed aperture devices) and complex operation (retuning the ion beam each time). Moreover, the beam tune process for acquiring a specific ion beam to be implanted may be accelerated, to be faster than using multiple fixed aperture(s) and/or retuning the ion beam each time, because the adjustment of the variable aperture may be achieved simply by mechanical operation.

Abstract translation: 在通过成形离子束注入衬底之前，使用孔装置内的可变孔径来形成离子束，特别是最终在离开衬底前方的位置形成离子束。 因此，可以通过不同的成形离子束分别注入衬底或不同衬底的不同部分，而不需要通过使用多个固定孔或每次重新调整离子束。 换句话说，可以通过定制的离子束分别实现不同的注入，而不需要高成本（使用多个固定孔径器件）和复杂的操作（每次重新调整离子束）。 此外，可以加速用于获取要注入的特定离子束的光束调整过程，以便每次都比使用多个固定孔径和/或重新调整离子束更快，因为可以实现可变孔径的调节 简单地通过机械操作。

公开(公告)号：US20110229987A1

公开(公告)日：2011-09-22

申请号：US12727573

申请日：2010-03-19

Applicant: JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

Inventor： JOHN D. POLLOCK ,  ZHIMIN WAN ,  ERIK COLLART

IPC: H01L21/66 ,  H01L21/265

CPC classification number: H01L21/265 ,  H01J2237/2001 ,  H01J2237/31701 ,  H01L21/67248 ,  Y10S438/905

Abstract: Techniques for low temperature ion implantation are provided to improve throughput. Specifically, the pressure of the backside gas may temporarily, continually or continuously increase before the starting of the implant process, such that the wafer may be quickly cooled down from room temperature to be essentially equal to the prescribed implant temperature. Further, after the vacuum venting process, the wafer may wait an extra time in the load lock chamber before the wafer is moved out the ion implanter, in order to allow the wafer temperature to reach a higher temperature quickly for minimizing water condensation on the wafer surface. Furthermore, to accurately monitor the wafer temperature during a period of changing wafer temperature, a non-contact type temperature measuring device may be used to monitor wafer temperature in a real time manner with minimized condensation.

Abstract translation: 提供了低温离子注入技术，以提高产量。 具体地说，在植入过程开始之前，背面气体的压力可以暂时地，持续地或连续增加，使得晶片可以从室温快速冷却到基本等于规定的植入温度。 此外，在真空排气过程之后，晶片可以在晶片移出离子注入机之前在加载锁定室中等待额外的时间，以便允许晶片温度快速达到更高的温度以使晶片上的水冷凝最小化 表面。 此外，为了在晶片温度变化期间精确地监视晶片温度，可以使用非接触型温度测量装置以最小化的冷凝实时监测晶片温度。

公开(公告)号：US07141809B2

公开(公告)日：2006-11-28

申请号：US11099062

申请日：2005-04-05

Applicant: John W. Vanderpot ,  John D. Pollock ,  Donald W. Berrian

Inventor： John W. Vanderpot ,  John D. Pollock ,  Donald W. Berrian

IPC: B65H1/00

CPC classification number: H01J37/20 ,  H01J37/3171 ,  H01J2237/0216 ,  H01J2237/20228 ,  H01J2237/20292 ,  H01J2237/31703 ,  H01L21/67069 ,  H01L21/67259 ,  H01L21/68764 ,  H01L21/68792

Abstract: A method for reciprocally transporting a workpiece on a scan arm through an ion beam is provided, wherein the scan arm is operably coupled to a motor comprising a rotor and stator that are individually rotatable about a first axis. An electromagnetic force applied between the rotor and stator rotates the rotor about the first axis and translates the workpiece through the ion beam along a first scan path. A position of the workpiece is sensed and the electromagnetic force between the rotor and stator is controlled in order to reverse the direction of motion of the workpiece along the first scan path, and wherein the control is based, at least in part, on the sensed position of the workpiece. The stator further rotates about the first axis in reaction to the rotation of the rotor, particularly in the reversal of direction of motion of the workpiece, thus acting as a reaction mass to the rotation of one or more of the rotor, scan arm, and workpiece.

Abstract translation: 提供了一种用于通过离子束在扫描臂上往复运送工件的方法，其中扫描臂可操作地耦合到包括转子和定子的电动机，该转子和定子可以围绕第一轴线单独旋转。 施加在转子和定子之间的电磁力围绕第一轴线旋转转子，并使工件沿第一扫描路径平移离子束。 感测工件的位置，并且控制转子和定子之间的电磁力以便沿着第一扫描路径反转工件的运动方向，并且其中控制至少部分地基于感测的 工件位置。 定子进一步围绕第一轴线转动，以反应转子的旋转，特别是在反转工件的运动方向上，从而作为与转子，扫描臂和转子中的一个或多个的旋转反应的质量 工件。

公开(公告)号：US06765219B2

公开(公告)日：2004-07-20

申请号：US09990848

申请日：2001-11-21

Applicant: Donald W. Berrian ,  John D. Pollock ,  John W. Vanderpot

Inventor： Donald W. Berrian ,  John D. Pollock ,  John W. Vanderpot

IPC: H01J3700

CPC classification number: H01J37/3171 ,  H01J2237/20207 ,  H01J2237/20228 ,  H01J2237/304

Abstract: An ion implantation system contains, in the ion implantation chamber, a workpiece holder that scans vertically while tilting a wafer at an angle of rotation that is rotated out of a perpendicular orientation with respect to the axis of projection in an ion beam. The implant angle into an implant surface on wafer that is retained by the workpiece holder is adjusted by selective rotation of the workpiece holder about its path of motion. A Faraday cup scans the ion beam along the intended location of the implant surface to form a setup measurement plane. The ion beam quality is adjusted to enhance beam uniformity along the setup plane according to these tilt-angle measurements. A charge neutralizing device, such as a flood gun, is moved in operational alignment with the workpiece.

Abstract translation: 离子注入系统在离子注入室中包含垂直扫描的工件保持器，同时以相对于离子束中的突出轴线的垂直取向旋转的旋转角度倾斜晶片。 通过工件保持器围绕其运动路径的选择性旋转来调节进入工件保持器所保持的晶片上植入物表面的植入角度。 法拉第杯沿着植入物表面的预期位置扫描离子束以形成设置测量平面。 根据这些倾斜角测量，调整离子束质量以提高沿着设置平面的光束均匀性。 电荷中和装置，例如喷枪，与工件运动对准地移动。