公开(公告)号：US20080093660A1

公开(公告)日：2008-04-24

申请号：US11653166

申请日：2007-01-12

Applicant: Hee-Sook Park ,  Byung-Hak Lee ,  Tae-Ho Cha ,  Woong-Hee Sohn ,  Jang-Hee Lee ,  Jae-Hwa Park

Inventor： Hee-Sook Park ,  Byung-Hak Lee ,  Tae-Ho Cha ,  Woong-Hee Sohn ,  Jang-Hee Lee ,  Jae-Hwa Park

IPC: H01L29/792 ,  H01L21/336

CPC classification number: H01L29/792 ,  H01L29/40114 ,  H01L29/513

Abstract: A flash memory device includes a semiconductor substrate, a gate insulating layer having a first width formed on the semiconductor substrate to trap carriers tunneled from the semiconductor substrate and a metal electrode on the gate insulating layer to receive a voltage required for tunneling. The metal electrode having a second width smaller than the first width. The flash memory device further includes a sidewall spacer surrounding a side surface of the metal electrode to prevent oxidation of the metal electrode.

Abstract translation: 闪速存储器件包括半导体衬底，栅极绝缘层，其具有形成在半导体衬底上的第一宽度，以捕获从半导体衬底隧穿的载流子，以及栅极绝缘层上的金属电极，以接收隧道所需的电压。 金属电极的第二宽度小于第一宽度。 闪存器件还包括围绕金属电极的侧表面的侧壁间隔件，以防止金属电极的氧化。

公开(公告)号：US07166856B2

公开(公告)日：2007-01-23

申请号：US10938644

申请日：2004-09-13

Applicant: Sue Jin Cho ,  Hyung Sun You ,  Jang Hee Lee

Inventor： Sue Jin Cho ,  Hyung Sun You ,  Jang Hee Lee

IPC: G01N21/88 ,  G01V8/00

CPC classification number: G01N21/95 ,  G01N2021/9513 ,  G02F1/1309

Abstract: An apparatus and method to inspect a display panel that can correctly detect a defect of the display panel itself. In the method of inspecting the display panel, a first image is captured from the display panel in a state in which no pattern is applied to the display panel. Light is then irradiated on the display panel in a state in which a pattern is applied to the display panel, and a second image is captured from the display panel. The first image can be compared with the second image, and a determination can be made as to whether or not a defect of the display panel is present.

Abstract translation: 一种用于检查可以正确地检测显示面板本身的缺陷的显示面板的装置和方法。 在对显示面板进行检查的方法中，在显示面板未施加图案的状态下，从显示面板拍摄第一图像。 然后在将图案应用于显示面板的状态下将光照射在显示面板上，并且从显示面板捕获第二图像。 可以将第一图像与第二图像进行比较，并且可以确定显示面板的缺陷是否存在。

公开(公告)号：US20060223249A1

公开(公告)日：2006-10-05

申请号：US11214680

申请日：2005-08-29

Applicant: Jae-Hwa Park ,  Hee-Sook Park ,  Dae-Yong Kim ,  Jang-Hee Lee

Inventor： Jae-Hwa Park ,  Hee-Sook Park ,  Dae-Yong Kim ,  Jang-Hee Lee

IPC: H01L21/8234

CPC classification number: H01L21/823828 ,  H01L21/823835 ,  H01L21/823842

Abstract: In one embodiment, a semiconductor device comprises a semiconductor substrate and a doped conductive layer formed over the semiconductor substrate. A diffusion barrier layer is formed over the doped conductive layer. The diffusion barrier layer comprises an amorphous semiconductor material. An ohmic contact layer is formed over the diffusion barrier layer. A metal barrier layer is formed over the ohmic contact layer. A metal layer is formed over the metal barrier layer.

Abstract translation: 在一个实施例中，半导体器件包括形成在半导体衬底上的半导体衬底和掺杂导电层。 在掺杂导电层上方形成扩散阻挡层。 扩散阻挡层包括非晶半导体材料。 在扩散阻挡层上形成欧姆接触层。 金属阻挡层形成在欧姆接触层上。 在金属阻挡层上形成金属层。

公开(公告)号：US20060110900A1

公开(公告)日：2006-05-25

申请号：US11283121

申请日：2005-11-18

Applicant: Sun-Pil Youn ,  Chang-Won Lee ,  Woong-Hee Sohn ,  Gil-Heyun Choi ,  Jong-Ryeol Yoo ,  Jang-Hee Lee ,  Jae-Hwa Park ,  Dong-Chan Lim ,  Byung-Hak Lee ,  Hee-Sook Park

Inventor： Sun-Pil Youn ,  Chang-Won Lee ,  Woong-Hee Sohn ,  Gil-Heyun Choi ,  Jong-Ryeol Yoo ,  Jang-Hee Lee ,  Jae-Hwa Park ,  Dong-Chan Lim ,  Byung-Hak Lee ,  Hee-Sook Park

IPC: H01L21/4763

CPC classification number: H01L21/28247 ,  H01L21/28044 ,  H01L29/4925

Abstract: In a method for forming a gate in a semiconductor device, a first preliminary gate structure is formed on a substrate. The first preliminary gate structure includes a gate oxide layer, a polysilicon layer pattern and a tungsten layer pattern sequentially stacked on the substrate. A primary oxidation process is performed using oxygen radicals at a first temperature for adjusting a thickness of the gate oxide layer to form a second preliminary gate structure having tungsten oxide. The tungsten oxide is reduced to a tungsten material using a gas containing hydrogen to form a gate structure. The tungsten oxide may not be formed on the gate structure so that generation of the whiskers may be suppressed. Thus, a short between adjacent wirings may not be generated.

Abstract translation: 在半导体器件中形成栅极的方法中，在衬底上形成第一预栅极结构。 第一预选栅极结构包括依次层叠在基板上的栅极氧化物层，多晶硅层图案和钨层图案。 在第一温度下使用氧自由基进行一次氧化处理，以调节栅极氧化物层的厚度以形成具有氧化钨的第二初步栅极结构。 使用含氢气体将钨氧化物还原成钨材料以形成栅极结构。 在栅极结构上可能不形成氧化钨，从而可以抑制晶须的产生。 因此，可能不会产生相邻布线之间的短路。

公开(公告)号：US20060014355A1

公开(公告)日：2006-01-19

申请号：US11233580

申请日：2005-09-23

Applicant: Jae-Hwa Park ,  Gil-Heyun Choi ,  Chang-Won Lee ,  Byung-Hak Lee ,  Hee-Sook Park ,  Woong-Hee Sohn ,  Jong-Ryeol Yoo ,  Sun-Pil Yun ,  Jang-Hee Lee ,  Dong-Chan Lim

Inventor： Jae-Hwa Park ,  Gil-Heyun Choi ,  Chang-Won Lee ,  Byung-Hak Lee ,  Hee-Sook Park ,  Woong-Hee Sohn ,  Jong-Ryeol Yoo ,  Sun-Pil Yun ,  Jang-Hee Lee ,  Dong-Chan Lim

IPC: H01L21/20

CPC classification number: H01L21/76841 ,  H01L21/28061 ,  H01L21/76843 ,  H01L21/76846 ,  H01L21/76855 ,  H01L29/4933 ,  H01L29/4941

Abstract: Embodiments of the present invention include semiconductor devices that can be made with relatively low resistance, and methods of forming the semiconductor devices. A resistance reducing layer is formed between a polysilicon layer and a metal layer. As a result, an interface resistance between the polysilicon layer and the metal layer is greatly reduced and a distribution of the interface resistance is very uniform. As a result, a conductive structure including the resistance reducing layer has a greatly reduced sheet resistance to improve electrical characteristics of a semiconductor device having the conductive structure.

公开(公告)号：US06334218B1

公开(公告)日：2001-12-25

申请号：US09398838

申请日：1999-09-16

Applicant: Ki-Won Jeong ,  Joong-Jeh Park ,  Min-Gu Kim ,  Jang-Hee Lee ,  Yong-Kook Lee

Inventor： Ki-Won Jeong ,  Joong-Jeh Park ,  Min-Gu Kim ,  Jang-Hee Lee ,  Yong-Kook Lee

IPC: H04N720

CPC classification number: H04H40/90 ,  H01Q1/125 ,  H01Q1/1257 ,  H01Q3/08 ,  H01Q3/10 ,  H04N7/20 ,  H04N21/485

Abstract: A satellite broadcast receiver comprises an antenna, a tuner, a modulator, a FEC decoder, a microprocessor, and an antenna driver. The antenna receives the satellite signal and the tuner tunes the satellite signal received by the antenna, and the modulator modulates the satellite signal tuned by the tuner into digital signal, the FEC decoder corrects a position error of the satellite antenna using the signal modulated by the modulator, and outputs a corresponding output signal, and the microprocessor receives the signal modulated by the modulator and the output signal of the error corrector, and outputs a control signal which controls the position of the antenna, and the antenna driver drives the antenna in accordance with the control signal of the microprocessor. The satellite broadcast receiver enables a user to detect satellites fast and see satellite broadcast conveniently.

Abstract translation: 卫星广播接收机包括天线，调谐器，调制器，FEC解码器，微处理器和天线驱动器。 天线接收卫星信号，调谐器调谐由天线接收的卫星信号，并且调制器将由调谐器调谐的卫星信号调制成数字信号，FEC解码器使用由该调制信号调制的信号来校正卫星天线的位置误差 并且输出相应的输出信号，并且微处理器接收由调制器调制的信号和误差校正器的输出信号，并输出控制天线位置的控制信号，并且天线驱动器根据天线驱动天线 与微处理器的控制信号。 卫星广播接收机使得用户能够快速地检测卫星，方便地观看卫星广播。

公开(公告)号：US6006530A

公开(公告)日：1999-12-28

申请号：US008476

申请日：1998-01-16

Applicant: Jang-Hee Lee ,  Sung-Ho Cho

Inventor： Jang-Hee Lee ,  Sung-Ho Cho

IPC: F25D17/06 ,  F25D11/02 ,  F25D29/00 ,  F25D17/08

CPC classification number: F25D29/00 ,  F25B2600/112 ,  F25B2700/2117 ,  F25D17/062 ,  F25D2400/04 ,  F25D2700/12

Abstract: A refrigerator has an evaporator to discharge cold air into a food storage chamber by rotation of a fan as the cold air is generated during circulation of a coolant, and a temperature detecting unit to detect the temperature of the evaporator and generate a signal related to the evaporator temperature. The fan is controlled to initially rotate at a low speed (when the evaporator is warmest) and then at a progressively increasing speed. The increasing speed is independent of the temperature of the food storage chamber. The speed could be increased in response to detected decreases in the evaporator temperature. Alternatively, the speed could increase automatically for a predetermined time period.

Abstract translation: 冰箱具有蒸发器，用于在冷却剂循环期间产生冷空气时通过旋转风扇将冷空气排出到食品储存室;以及温度检测单元，用于检测蒸发器的温度并产生与蒸发器相关的信号 蒸发器温度。 风扇被控制成最初以低速旋转（当蒸发器最热时），然后以逐渐增加的速度旋转。 增加的速度与食物储存室的温度无关。 响应于蒸发器温度的检测到的降低，速度可以增加。 或者，速度可以在预定时间段内自动增加。

公开(公告)号：US10184178B2

公开(公告)日：2019-01-22

申请号：US14959333

申请日：2015-12-04

Applicant: Minjong Kim ,  Jung-soo Yoon ,  Jang-Hee Lee ,  Jongwon Hong

Inventor： Minjong Kim ,  Jung-soo Yoon ,  Jang-Hee Lee ,  Jongwon Hong

IPC: C23C16/455 ,  C23C16/50 ,  C23C16/505 ,  H01J37/32

Abstract: A deposition apparatus includes a chuck in a process chamber, the chuck having a top surface on which a substrate is loaded, a showerhead disposed over the chuck, and a fence extension disposed in the process chamber. Plasma is generated in a space between the showerhead and the loaded substrate during a deposition process. The fence extension at least partially confines the plasma in the space during the deposition process, thereby enabling improved thickness uniformity and reliability of a layer deposited on the loaded substrate during the deposition process.

公开(公告)号：US20140033253A1

公开(公告)日：2014-01-30

申请号：US13982136

申请日：2012-01-30

Applicant: Sang Hyun Cho ,  Woo Seok Ahn ,  Youk Kwon ,  Jang Hee Lee ,  Young Wau Lim

Inventor： Sang Hyun Cho ,  Woo Seok Ahn ,  Youk Kwon ,  Jang Hee Lee ,  Young Wau Lim

IPC: H04N21/422

CPC classification number: H04N21/42222 ,  G06F3/0346 ,  G09G5/08 ,  H04N21/42204 ,  H04N21/431

Abstract: The present invention relates to an image display device and a method for operating same. According to an embodiment of the present invention, a method for operating an image display device uses a remote controller, and comprises the steps of: displaying a pointer in a first area of a display; receiving movement coordinate information of the pointer from the remote controller; restoring the first area using a prestored image when the first area does not overlap a second area where a pointer is displayed, based on the movement coordinate information; storing an image of the second area; and displaying a pointer in the second area. This enables the pointer of the remote controller to be easily displayed.

Abstract translation: 本发明涉及图像显示装置及其操作方法。 根据本发明的实施例，一种用于操作图像显示装置的方法使用遥控器，并且包括以下步骤：在显示器的第一区域中显示指针; 从遥控器接收指针的移动坐标信息; 基于所述移动坐标信息，当所述第一区域不与指示体的第二区域重叠时，使用预存储图像恢复所述第一区域; 存储第二区域的图像; 以及在第二区域中显示指针。 这样可以方便地显示遥控器的指针。

公开(公告)号：US20120094437A1

公开(公告)日：2012-04-19

申请号：US13235717

申请日：2011-09-19

Applicant: Kyu-hee Han ,  Sang-hoon Ahn ,  Jang-hee Lee ,  Jong-min Baek ,  Kyoung-hee Kim ,  Byung-lyul Park ,  Byung-hee Kim

Inventor： Kyu-hee Han ,  Sang-hoon Ahn ,  Jang-hee Lee ,  Jong-min Baek ,  Kyoung-hee Kim ,  Byung-lyul Park ,  Byung-hee Kim

IPC: H01L21/50 ,  H01L21/768

CPC classification number: H01L23/481 ,  H01L21/76801 ,  H01L21/76825 ,  H01L21/76831 ,  H01L21/76898 ,  H01L2224/0401 ,  H01L2224/0557 ,  H01L2224/13025 ,  H01L2224/131 ,  H01L2224/14181 ,  H01L2224/16146 ,  H01L2924/00014 ,  H01L2224/05552

Abstract: A method of forming through silicon vias (TSVs) includes forming a primary via hole in a semiconductor substrate, depositing low-k dielectric material in the primary via hole, forming a secondary via hole by etching the low-k dielectric in the primary via hole, in such a manner that a via insulating layer and an inter metal dielectric layer of the low-k dielectric layer are simultaneously formed. The via insulating layer is formed of the low-k dielectric material on sidewalls and a bottom surface of the substrate which delimit the primary via hole and the inter metal dielectric layer is formed on an upper surface of the substrate. Then a metal layer is formed on the substrate including in the secondary via hole, and the metal layer is selectively removed from an upper surface of the semiconductor substrate.

Abstract translation: 通过硅通孔（TSV）形成的方法包括在半导体衬底中形成初级通孔，在初级通孔中沉积低k介电材料，通过蚀刻主通孔中的低k电介质形成次级通孔 以同时形成低k电介质层的通孔绝缘层和金属间介电层的方式。 通孔绝缘层由侧壁上的低k电介质材料和限定初级通孔的衬底的底表面形成，并且金属介电层形成在衬底的上表面上。 然后在包括在二次通孔中的基板上形成金属层，并且从半导体基板的上表面选择性地去除金属层。